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    2500 TRANSISTOR Search Results

    2500 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    2500 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2300 MHz to 3000 MHz Quadrature Modulator ADL5373 Output frequency range: 2300 MHz to 3000 MHz Modulation bandwidth: >500 MHz 3 dB Output third-order intercept: 26 dBm @ 2500 MHz 1 dB output compression: 13.8 dBm @ 2500 MHz Noise floor: −157.1 dBm/Hz @ 2500 MHz


    Original     		PDF ADL5373 24-lead ADL5373 MO-220-VGGD-2 CP-24-2) ADL5373ACPZ-R7 ADL5373ACPZ-WP1 ADL5373-EVALZ1

    AFG3252

    Abstract: 64 QAM modulator demodulator AD8348 2450BL15B050 AD9709 adf4360-7 AD9779 bench 2800 100MHz sine wave generator adl5385 application note
    Text: 2300 MHz to 3000 MHz Quadrature Modulator ADL5373 FEATURES Output frequency range: 2300 MHz to 3000 MHz Modulation bandwidth: >500 MHz 3 dB 1 dB output compression: +14.0 dBm @ 2500 MHz Noise floor: −157 dBm/Hz @ 2500 MHz Sideband suppression: −39 dBc @ 2500 MHz


    Original     		PDF ADL5373 24-lead ADL5373 MO-220-VGGD-2 CP-24-2) ADL5373ACPZ-R7 ADL5373ACPZ-WP1 ADL5373-EVALZ1 AFG3252 64 QAM modulator demodulator AD8348 2450BL15B050 AD9709 adf4360-7 AD9779 bench 2800 100MHz sine wave generator adl5385 application note

    AD9779

    Abstract: 2450BL15B050 AD9709 AD9761 AD9763 AD9765 ADL5373 AN-772 CP-24-2 WiMAX ADL5373 baseband
    Text: 2300 MHz to 3000 MHz Quadrature Modulator ADL5373 Output frequency range: 2300 MHz to 3000 MHz Modulation bandwidth: >500 MHz 3 dB Output third-order intercept: 26 dBm @ 2500 MHz 1 dB output compression: 13.8 dBm @ 2500 MHz Noise floor: −157.1 dBm/Hz @ 2500 MHz


    Original     		PDF ADL5373 24-lead ADL5373 MO-220-VGGD-2 CP-24-2) ADL5373ACPZ-R7 ADL5373ACPZ-WP1 ADL5373-EVALZ1 AD9779 2450BL15B050 AD9709 AD9761 AD9763 AD9765 AN-772 CP-24-2 WiMAX ADL5373 baseband

    IXBX64N250

    Abstract: IXBK64N250 64N250 IXBX 64N250 PLUS247 128a
    Text: Preliminary Technical Information High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC25 = 2500 = 75 ≤ 3.0 VCE sat Monolithic Bipolar MOS Transistor V A V TO-264 (IXBK) Symbol Test Conditions VCES TJ = 25°C to 150°C VGES Maximum Ratings 2500


    Original     		PDF IXBK64N250 IXBX64N250 O-264 IC110 PLUS247TM 64N250 IXBX64N250 IXBK64N250 64N250 IXBX 64N250 PLUS247 128a

    Untitled

    Abstract: No abstract text available
    Text: PHASE LOCKED OSCILLATOR MODEL MDR6100-2500 2500 MHz Features ! ! ! ! Low Phase Noise: -125 dBc/Hz @ 100 kHz Low Spurious: -80 dBc Typical External Reference Environmental Screening Available Specifications1 CHARACTERISTIC Frequency (MHz)2 Mechanical Tuning


    Original     		PDF MDR6100-2500 20log

    Untitled

    Abstract: No abstract text available
    Text: PHASE LOCKED OSCILLATOR MODEL MDR5100-2500 2500 MHz Features ! ! ! ! Low Phase Noise: -124 dBc/Hz @ 100 kHz Low Spurious: -80 dBc Typical Internal Reference Design Environmental Screening Available Specifications1 CHARACTERISTIC Frequency (MHz)2 Mechanical Tuning


    Original     		PDF MDR5100-2500 20log

    Untitled

    Abstract: No abstract text available
    Text: PHASE LOCKED OSCILLATOR MODEL MDR5100-2500 2500 MHz Features ! ! ! ! Low Phase Noise: -124 dBc/Hz @ 100 kHz Low Spurious: -80 dBc Typical Internal Reference Design Environmental Screening Available Specifications1 CHARACTERISTIC Frequency (MHz)2 Mechanical Tuning


    Original     		PDF MDR5100-2500 MDR5100

    Untitled

    Abstract: No abstract text available
    Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 2500V IC90 = 25A VCE sat ≤ 3.3V IXBX25N250 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES Continuous ± 20


    Original     		PDF IXBX25N250 25N250

    IXBX25N250

    Abstract: 25N250 ds100044
    Text: IXBX25N250 High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 2500V IC90 = 25A VCE sat ≤ 3.3V Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES Continuous ± 20


    Original     		PDF IXBX25N250 25N250 IXBX25N250 ds100044

    2225-4L

    Abstract: No abstract text available
    Text: 2225-4L 3.5 Watts, 24 Volts, Class C Microwave 2200-2500 MHz GENERAL DESCRIPTION The 2225-4L is a COMMON BASE transistor capable of providing 3.5 Watts, Class C output power over the band 2200-2500 MHz. The transistor includes input prematching for full broadband capability. Gold metalization and


    Original     		PDF 2225-4L 2225-4L

    Untitled

    Abstract: No abstract text available
    Text: AN11418 2500 MHz low noise, high linearity amplifier using BGU8053 Rev. 2 — 14 January 2014 Application note Document information Info Content Keywords BGU8053, 2500 MHz, LNA, BTS Abstract This document provides circuit schematic, layout, BOM and typical EVB


    Original     		PDF AN11418 BGU8053 BGU8053, OM7957, BGU8053

    200B

    Abstract: BCP56 LM7805 PTFA260851E PTFA260851F
    Text: PTFA260851E PTFA260851F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz Description The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs designed for WiMAX power amplifier applications in the 2500 to


    Original     		PDF PTFA260851E PTFA260851F PTFA260851E PTFA260851F 85-watt 200B BCP56 LM7805

    200B

    Abstract: BCP56 LM7805 PTFA260851E PTFA260851F
    Text: PTFA260851E PTFA260851F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz Description The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs designed for WiMAX power amplifier applications in the 2500 to


    Original     		PDF PTFA260851E PTFA260851F PTFA260851E PTFA260851F 85-watt 200B BCP56 LM7805

    marking l33

    Abstract: transistor L44 L33 TRANSISTOR BCP56 LM7805 PTFA261702E RO4350 L42 marking transistor
    Text: PTFA261702E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 – 2700 MHz Description The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features


    Original     		PDF PTFA261702E PTFA261702E 170-watt marking l33 transistor L44 L33 TRANSISTOR BCP56 LM7805 RO4350 L42 marking transistor

    BJT with i-v characteristics

    Abstract: SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR ECG015 LL1608-F15NK MCH185A180JK MCH185A560JK
    Text: PRELIMINARY DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Features Applications n n n n 1800 to 2500 MHz Highly Reliable InGaP HBT Excellent Stability Multi-carrier Systems n High Linearity Amplifiers n Cellular, PCS, WLL Package Available


    Original     		PDF ECG015 OT-89 ECG015 OT-89 SS-000145-000 BJT with i-v characteristics SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR LL1608-F15NK MCH185A180JK MCH185A560JK

    ECG015B

    Abstract: MCR10JW000 ROHM SOT89 MARKING ECG015 marking 0603 CAPACITOR HP RF amplifier SOT-89
    Text: DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Features Applications „ „ 1800 to 2500 MHz Highly Reliable InGaP HBT Excellent Stability „ „ Multi-carrier Systems „ High Linearity Amplifiers „ Cellular, PCS, WLL Package Available -B SOT-89


    Original     		PDF ECG015 OT-89 ECG015 OT-89 AP-000145-000 AP-000192-000 AP-000194-000 AP-000487-000 ECG015B MCR10JW000 ROHM SOT89 MARKING ECG015 marking 0603 CAPACITOR HP RF amplifier SOT-89

    Untitled

    Abstract: No abstract text available
    Text: 2ch Digital isolator Isolation voltage 2500 Vrms High Speed Isolator BM67220FV-C ●Description The BM67220FV-C is a high-speed isolator IC used in electric vehicles and hybrid vehicles. This IC features dielectric strength of 2500 Vrms between I/O and the


    Original     		PDF BM67220FV-C BM67220FV-C SSOP-B20W

    Untitled

    Abstract: No abstract text available
    Text: 2ch Digital isolator Isolation voltage 2500 Vrms High Speed Isolator BM67221FV-C ●Description The BM67221FV-C is a high-speed isolator IC used in electric vehicles and hybrid vehicles. This IC features dielectric strength of 2500 Vrms between I/O and the


    Original     		PDF BM67221FV-C BM67221FV-C SSOP-B20W

    SSG TRANSISTOR

    Abstract: cdi schematics pcb ap 6928 ACPR2 SSG 23 TRANSISTOR 2450 MHz low noise amplifier schematic Amplifier SOT-89 c4 ECG015 HP RF amplifier SOT-89 863300
    Text: DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Features Applications „ „ 1800 to 2500 MHz Highly Reliable InGaP HBT Excellent Stability „ „ Multi-carrier Systems „ High Linearity Amplifiers „ Cellular, PCS, WLL Package Available -B SOT-89


    Original     		PDF ECG015 OT-89 ECG015 OT-89 AP-000145-000 ECG015: AP-000192-000 AP-000194-000 AP-000487-000 SSG TRANSISTOR cdi schematics pcb ap 6928 ACPR2 SSG 23 TRANSISTOR 2450 MHz low noise amplifier schematic Amplifier SOT-89 c4 HP RF amplifier SOT-89 863300

    Untitled

    Abstract: No abstract text available
    Text: 2ch Digital isolator Isolation voltage 2500 Vrms High Speed Isolator BM67221FV-C ●Description The BM67221FV-C is a high-speed isolator IC used in electric vehicles and hybrid vehicles. This IC features dielectric strength of 2500 Vrms between I/O and the


    Original     		PDF BM67221FV-C BM67221FV-C SSOP-B20W

    Untitled

    Abstract: No abstract text available
    Text: 2ch Digital isolator Isolation voltage 2500 Vrms High Speed Isolator BM67220FV-C ●Description The BM67220FV-C is a high-speed isolator IC used in electric vehicles and hybrid vehicles. This IC features dielectric strength of 2500 Vrms between I/O and the


    Original     		PDF BM67220FV-C BM67220FV-C SSOP-B20W

    HA2500

    Abstract: HA7-2505-5 HA-2500 2505-5 HA2-2500-2 HA2-2502-2 HA2-2505-5 HA-2502 HA-2505 HA-2510
    Text: HA-2500, HA-2502, HA-2505 S E M I C O N D U C T O R 12MHz, High Input Impedance, Operational Amplifiers November 1996 Features Description • Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V/µs HA-2500, HA-2502, HA-2505 comprises a series of


    Original     		PDF HA-2500, HA-2502, HA-2505 12MHz, HA-2505 330ns 500kHz 1-800-4-HARRIS HA2500 HA7-2505-5 HA-2500 2505-5 HA2-2500-2 HA2-2502-2 HA2-2505-5 HA-2502 HA-2510

    TB379

    Abstract: No abstract text available
    Text: HA-2500/883 April 2002 Precision High Slew Rate Operational Amplifier Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. HA-2500/883 is a monolithic operational amplifier which is


    Original     		PDF HA-2500/883 MIL-STD883 HA-2500/883 TB379

    Untitled

    Abstract: No abstract text available
    Text: HA-2500, HA-2505 Semiconductor September 1998 File Number 2890.3 Features 12MHz, High Input Impedance, Operational Amplifiers HA-2500,HA-2505 comprises a series of operational amplifiers whose designs are optimized to deliver excellent slew rate, bandwidth, and settling time specifications. The


    OCR Scan     		PDF HA-2500, HA-2505 12MHz, 330ns 12MHz HA-2500 HA-2505 1450nm