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    ACPR2 Price and Stock

    Automation Components Inc A/CP-R2-NIST

    10,000 Ohm Thermistor, Room (R2)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A/CP-R2-NIST Ammo Pack 1 1
    • 1 $114
    • 10 $114
    • 100 $114
    • 1000 $114
    • 10000 $114
    Buy Now

    Automation Components Inc A/CP-R2S-A09-C5

    10,000 Ohm Thermistor (Type II),
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A/CP-R2S-A09-C5 Ammo Pack 1 1
    • 1 $48
    • 10 $48
    • 100 $48
    • 1000 $48
    • 10000 $48
    Buy Now

    Automation Components Inc A/CP-R2S-A08-G5

    10,000 Ohm Thermistor (Type II),
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A/CP-R2S-A08-G5 Ammo Pack 1 1
    • 1 $48
    • 10 $48
    • 100 $48
    • 1000 $48
    • 10000 $48
    Buy Now

    Automation Components Inc A/CP-R2S-A01-G5

    10,000 Ohm Thermistor (Type II),
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A/CP-R2S-A01-G5 Ammo Pack 1 1
    • 1 $48
    • 10 $48
    • 100 $48
    • 1000 $48
    • 10000 $48
    Buy Now

    Automation Components Inc A/CP-R2S-A04-B4

    10,000 Ohm Thermistor (Type II),
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A/CP-R2S-A04-B4 Ammo Pack 1 1
    • 1 $48
    • 10 $48
    • 100 $48
    • 1000 $48
    • 10000 $48
    Buy Now

    ACPR2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PCC103BCT-ND

    Abstract: capacitor siemens 4700 35 DD 102 CAPACITOR Siemens Ferrite PA13 0.1 uF 50v CAPACITOR
    Text: PRELIMINARY PTF 102015* GOLDMOS Field Effect Transistor 30 Watts, 2110-2170 MHz Description WCDMA Performance 20 V DS = 28 V IDQ = 320 mA f C = 2170 Efficiency % x 16 -20 12 -35 Efficiency ACPR1 (FC + 5 MHz) 8 -50 4 ACPR2 (FC + 10 MHz) 0.5 1 1.5 2 2.5


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    PDF PC56106-ND PCC103BCT-ND P5182-ND 220ECT-ND 1-877-GOLDMOS 1522-PTF PCC103BCT-ND capacitor siemens 4700 35 DD 102 CAPACITOR Siemens Ferrite PA13 0.1 uF 50v CAPACITOR

    DD 102 CAPACITOR

    Abstract: PA13 transistor 200 watt 28 v 0-30 mhz PCC103BCT-ND PCC103B
    Text: PRELIMINARY PTF 102015* GOLDMOS Field Effect Transistor 30 Watts, 2110-2170 MHz Description WCDMA Performance 20 V DS = 28 V IDQ = 320 mA f C = 2170 Efficiency % x 16 -20 12 -35 Efficiency ACPR1 (FC + 5 MHz) 8 -50 4 ACPR2 (FC + 10 MHz) 0.5 1 1.5 2 2.5


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    PDF PC56106-ND PCC103BCT-ND P5182-ND 220ECT-ND 1-877-GOLDMOS 1522-PTF DD 102 CAPACITOR PA13 transistor 200 watt 28 v 0-30 mhz PCC103BCT-ND PCC103B

    PTF 102015

    Abstract: PCC103BCT-ND 0.1 uF 50v CAPACITOR DD 102 CAPACITOR
    Text: PRELIMINARY PTF 102015* GOLDMOS Field Effect Transistor 30 Watts, 2110-2170 MHz Description WCDMA Performance 20 V DS = 28 V IDQ = 320 mA f C = 2170 Efficiency % x 16 Efficiency -20 12 -35 ACPR1 (FC + 5 MHz) 8 -50 4 ACPR2 (FC + 10 MHz) 0.5 1 1.5 2 2.5


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    PDF PC56106-ND PCC103BCT-ND P5182-ND 220ECT-ND 1-877-GOLDMOS 1522-PTF PTF 102015 PCC103BCT-ND 0.1 uF 50v CAPACITOR DD 102 CAPACITOR

    power amplifier rf

    Abstract: "docsis 3.0" TAT2814 J-STD-020 SAC305 TAT2814A
    Text: TAT2814A DOCSIS 3.0 / Edge QAM Variable Gain Amplifier Applications • • Integrated DOCSIS 3.0 / Edge QAM RF Amplifier chain Forward path 45 – 1003 MHz variable-gain applications Product Features • • • • • • • • • • Meets DOCSIS 3.0 with +4 dB typical performance


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    PDF TAT2814A 48-pin TAT2814A power amplifier rf "docsis 3.0" TAT2814 J-STD-020 SAC305

    Untitled

    Abstract: No abstract text available
    Text: RF2681 Preliminary 4 W-CDMA LINEAR VARIABLE GAIN DRIVER AMPLIFIER Typical Applications • General Purpose Driver Amplifier Product Description The RF2681 is a linear variable gain amplifier specifically designed for PA driver applications in W-CDMA handsets.


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    PDF RF2681 RF2681 12-pin,

    RF35

    Abstract: No abstract text available
    Text: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 01 — 4 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


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    PDF BLF6G27-10; BLF6G27-10G ACPR885k ACPR1980k BLF6G27-10 BLF6G27-10G RF35

    TRANSISTOR J601

    Abstract: gp816 RF35 J2396 J249
    Text: BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance


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    PDF BLF6G38-10; BLF6G38-10G ACPR885k ACPR1980k BLF6G38-10 BLF6G38-10G TRANSISTOR J601 gp816 RF35 J2396 J249

    7833 regulator pin diagram

    Abstract: PN-15 65 MHZ - 125MHZ rf transmitter Sn60Pb40A ESGD3000A J-STD-006 REGULATOR 7833 8593E ACPM-7833 ACPM-7833-BLK
    Text: Agilent ACPM-7833 CDMA1900 PCS Power Amplifier Module Data Sheet Features • Operating frequency: 1850 – 1910 MHz • 28.5 dBm linear output power @ 3.4 V • High efficiency: 40% PAE Description The ACPM-7833 is a fully matched CDMA Power amplifier module. Designed around Agilent


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    PDF ACPM-7833 CDMA1900 ACPM-7833 5988-9730EN 5989-0403EN Sn6337A Sn60Pb40A J-STD-006. JESD22-B102-C. 7833 regulator pin diagram PN-15 65 MHZ - 125MHZ rf transmitter ESGD3000A J-STD-006 REGULATOR 7833 8593E ACPM-7833-BLK

    RMPA1951-102

    Abstract: RO4003
    Text: RMPA1951-102 RF Components 3V PCS CDMA Power Amplifier Module PRODUCT INFORMATION Description Features The RMPA1951-102 is a small-outline, power amplifier module PAM for CDMA Personal Communication System (PCS) and Wireless Local Loop (WLL) applications. Advanced DC power


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    PDF RMPA1951-102 RMPA1951-102 RO4003

    bt 2323

    Abstract: TX-2G
    Text: AWL9966 802.11a/b/g/n WLAN/Bluetooth FEIC PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • 3% Dynamic EVM @ POUT = +17 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps • 3% Dynamic EVM @ POUT = +20 dBm with IEEE 802.11g 64 QAM OFDM at 54 Mbps • -30 dBc 1st Sidelobe / -50 dBc 2nd Sidelobe


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    PDF 11a/b/g/n AWL9966 bt 2323 TX-2G

    phase shifter 2GHz

    Abstract: SMV1235-074 TQ7M35 p8mi
    Text: Preliminary: Subject to change without notice CELL_LO DA TQ7M35 PWR_UP CELL_A DA DA PCS_LO DATA SHEET DA VCNTRL Phase Shifter Phase Shifter ÷2 Phase Shifter TCXO 3V HBT SiGe CDMA Transmitter VCC_VGA VGA VGA VCC_LO CELL_B VCC_DRV PCS_B PCS_A VCC_IQ AB_SEL


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    PDF TQ7M35 TQ7M35 phase shifter 2GHz SMV1235-074 p8mi

    BJT with i-v characteristics

    Abstract: SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR ECG015 LL1608-F15NK MCH185A180JK MCH185A560JK
    Text: PRELIMINARY DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Features Applications n n n n 1800 to 2500 MHz Highly Reliable InGaP HBT Excellent Stability Multi-carrier Systems n High Linearity Amplifiers n Cellular, PCS, WLL Package Available


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    PDF ECG015 OT-89 ECG015 OT-89 SS-000145-000 BJT with i-v characteristics SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR LL1608-F15NK MCH185A180JK MCH185A560JK

    schematics for a PA amplifier

    Abstract: RF2369 236640
    Text: RF2369 Preliminary 4 3V LOW NOISE AMPLIFIER/ 3V PA DRIVER AMPLIFIER Typical Applications • CDMA/Cellular Bypass LNA • General Purpose Amplification • CDMA/Cellular Bypass Driver Amplifier • Commercial and Consumer Systems Product Description 1.80 1.40


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    PDF RF2369 RF2369 05GHz schematics for a PA amplifier 236640

    GRM39Y5V104Z16V

    Abstract: No abstract text available
    Text: February 2005 RMPA1963 i-Lo US-PCS CDMA, CDMA2000-1X and WCDMA Power Amplifier Module Features General Description • 38% CDMA/WCDMA efficiency at +28 dBm Pout ■ 14% CDMA/WCDMA efficiency 85 mA total current at +16 dBm Pout ■ Linear operation in low-power mode up to +19 dBm


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    PDF RMPA1963 CDMA2000-1X GRM39Y5V104Z16V

    Untitled

    Abstract: No abstract text available
    Text: RMPA0951AT 3V Cellular CDMA Power Amplifier Module General Description Features The RMPA0951AT is a dual mode, small-outline Power Amplifier Module PAM for Cellular CDMA personal communication system applications. The PA is internallymatched to 50Ω and DC blocked which minimizes the use


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    PDF RMPA0951AT RMPA0951AT

    murata REEL label lot number

    Abstract: TRANSISTOR SMD MARKING CODE WS ROHM polystyrene capacitor IPC-7711 ws1101 smd transistor marking da A423801A 23801A J-STD-020B J-STD-033
    Text: !" PRELIMINARY DATASHEET WS1101 Power Amplifier Module for CDMA/AMPS 824-849MHz DATASHEET (DEVICE : WS1101, 3x3 CDMA/AMPS PAM) Issued Date : January 29 , 2005 S. W. Paek Director, Module Group 1 Preliminary Information WM0501-11 !" PRODUCT DESCRIPTION WS1101


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    PDF WS1101 824-849MHz) WS1101, WM0501-11 WS1101 824-849MHz murata REEL label lot number TRANSISTOR SMD MARKING CODE WS ROHM polystyrene capacitor IPC-7711 smd transistor marking da A423801A 23801A J-STD-020B J-STD-033

    Practical statistical simulation for efficient circuit design

    Abstract: kopin
    Text: P1: SFK Trim: 247mm x 174mm CUUK1544-09 9 CUUK1544/Fager Top: 12.653mm Design: Engg C Gutter: 16.871mm 978 0 521 76210 6 June 14, 2011 Practical statistical simulation for efficient circuit design Pete Zampardi, Yingying Yang, Juntao Hu, Bin Li, Mats Fredriksson,


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    PDF 247mm 174mm CUUK1544-09 CUUK1544/Fager 653mm 871mm 7033268A-GEN, com/display/ads2009/Using 28DOE Practical statistical simulation for efficient circuit design kopin

    CHP1237

    Abstract: No abstract text available
    Text: CHP1237 KPCS CDMA InGaP HBT Amplifier Module PRELIMINARY DATA SHEET - Rev 1.5 FEATURES • Small Profile 3 x 3 x 1 mm • PFTTM 50 Ω Matched Module • High Linearity of -50 dBc • High PAE of 39% • InGaP HBT Technology • Low Quiescent Current of 55 mA


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    PDF CHP1237 CHP1237

    SiGe 2528L

    Abstract: SE2528L SE2525L ofdm signal qam circuit
    Text: SE2528L 2.4 GHz Power Amplifier with Power Detector Applications Product Description • •  The SE2528L is a 2.4 GHz power amplifier designed for use in the 2.4 GHz ISM band for wireless LAN applications. The device incorporates two selectable power detectors for closed loop monitoring of the


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    PDF SE2528L IEEE802 SE2528L SE2525L. SE2525L SiGe 2528L ofdm signal qam circuit

    Untitled

    Abstract: No abstract text available
    Text: CXG1156K Power Amplifier Module for JCDMA For the availability of this product, please contact the sales office. Description The CXG1156K is the power amplifier module which operates at a single power supply. This IC is designed using the Sony’s original p-Gate HFET process.


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    PDF CXG1156K CXG1156K 065cc 15dBm 18dBm: 15dBm: 10PIN 22-R0 LCC-10C-371

    Untitled

    Abstract: No abstract text available
    Text: CXG1156K Power Amplifier Module for JCDMA Description The CXG1156K is the power amplifier module which operates at a single power supply. This IC is designed using the Sony’s original p-Gate HFET process. 10 pin LCC Ceramic Features • Single power supply operation:


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    PDF CXG1156K CXG1156K 065cc 15dBm 18dBm: 15dBm: 900MHz) 10PIN LCC-10C-03

    SKY77761

    Abstract: SKY77761-12
    Text: PRELIMINARY DATA SHEET SKY77761-12 Power Amplifier Module for CDMA/ WCDMA/ HSDPA/ HSUPA/ HSPA+/ LTE – Band I 1920–1980 MHz Applications Description • WCDMA handsets The SKY77761-12 Power Amplifier Module (PAM) is a fully matched 10-pad surface mount module


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    PDF SKY77761-12 CDMA2000 10-pad SKY77761

    Untitled

    Abstract: No abstract text available
    Text: CXG1158K Power Amplifier Module for JCDMA For the availability of this product, please contact the sales office. Description The CXG1158K is the power amplifier module which operates at a single power supply. This IC is designed using the Sony's original p-Gate HFET process.


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    PDF CXG1158K CXG1158K 15dBm 18dBm: 15dBm: 10PIN LCC-10C-361

    CX77154

    Abstract: d435
    Text: DATA SHEET SKY77149 PA Module for CDMA / PCS 1850–1910 MHz Applications • Personal Communications Services (PCS) • Wireless Local Loop (WLL) Features • Low voltage positive bias supply - 3.2 V to 4.2 V • Low VREF - 2.85 V, nominal • Low IREF


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    PDF SKY77149 CX77154 d435