IXGH24N60CD1
Abstract: ISOPLUS247
Text: HiPerFASTTM IGBT with Diode 24N60CD1 VCES = 600 IC25 = 42 VCE sat = 2.5 IXGR ISOPLUS247TM V A V (Electrically Isolated Back Surface) Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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24N60CD1
ISOPLUS247TM
IXGH24N60CD1
ISOPLUS247
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C4080
Abstract: No abstract text available
Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET
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24N60C5M
O-220
20070704a
C4080
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGR 24N60C ISOPLUS247TM Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 42 A = 2.5 V = 60 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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ISOPLUS247TM
24N60C
IC110
E153432
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24N60CD1
Abstract: IXGH24N60CD1
Text: HiPerFASTTM IGBT with Diode Lightspeed Series IXGH 24N60CD1 VCES = 600 V = 48 A IXGT 24N60CD1 IC25 VCE sat = 2.5 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous
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24N60CD1
IC110
O-268
O-247
IXGH24N60CD1
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions
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24N60C5M
O-220
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGR 24N60C ISOPLUS247TM Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 42 A = 2.5 V = 60 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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24N60C
ISOPLUS247TM
IC110
728B1
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Untitled
Abstract: No abstract text available
Text: IXKP 24N60C5M CoolMOS 1 Power MOSFET ID25 = 8.5 A VDSS = 600 V RDS on) max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions
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24N60C5M
O-220
20090209d
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode Lightspeed Series IXGH 24N60CD1 VCES = 600 V IXGT 24N60CD1 IC25 = 48 A VCE sat = 2.5 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous
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24N60CD1
IC110
O-268
O-247
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode IXGR 24N60CD1 VCES = 600 V IC25 = 42 A VCE sat = 2.5 V ISOPLUS247TM (Electrically Isolated Back Surface) Preliminary data ISOPLUS 247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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ISOPLUS247TM
24N60CD1
O-247
IXGH24N60CD1
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Untitled
Abstract: No abstract text available
Text: IXKH 24N60C5 IXKP 24N60C5 Advanced Technical Information ID25 = 24 A = 600 V VDSS RDS on max = 0.165 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S D (TAB) S TO-220 AB (IXKP)
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24N60C5
24N60C5
O-247
O-220
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DSA003710
Abstract: MA660
Text: IXKH 24N60C5 IXKP 24N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 24 A VDSS = 600 V RDS on max = 0.165 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP)
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24N60C5
O-247
O-220
20070625a
DSA003710
MA660
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24N60
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGR 24N60C ISOPLUS247TM Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 42 A = 2.5 V = 60 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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24N60C
ISOPLUS247TM
IC110
E153432
728B1
24N60
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IXKP24N60C5M
Abstract: No abstract text available
Text: IXKP 24N60C5M CoolMOS 1 Power MOSFET ID25 = 8.5 A VDSS = 600 V RDS on) max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions
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24N60C5M
O-220
20080523c
IXKP24N60C5M
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET
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24N60C5M
O-220
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24N60C5
Abstract: ixkh24n60c5 IXKP24N60C5 K 739 mosfet
Text: IXKH 24N60C5 IXKP 24N60C5 CoolMOS 1 Power MOSFET ID25 = 24 A VDSS = 600 V RDS on) max = 0.165 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D Preliminary data TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP) G D S
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24N60C5
O-247
O-220
20080523c
24N60C5
ixkh24n60c5
IXKP24N60C5
K 739 mosfet
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Untitled
Abstract: No abstract text available
Text: IXKH 24N60C5 IXKP 24N60C5 CoolMOS 1 Power MOSFET ID25 = 24 A VDSS = 600 V RDS on) max = 0.165 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D Preliminary data TO-247 AD (IXKH) G G D fl D(TAB) S S TO-220 AB (IXKP) G D
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24N60C5
O-247
O-220
20080523c
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24N60C
Abstract: 98936
Text: HiPerFASTTM IGBT LightspeedTM Series Symbol Test Conditions IXGA 24N60C IXGP 24N60C Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 48 A IC110 TC = 110°C
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24N60C
IC110
O-220
O-263
728B1
24N60C
98936
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Untitled
Abstract: No abstract text available
Text: IXKP 24N60C5M CoolMOS 1 Power MOSFET ID25 = 8.5 A VDSS = 600 V RDS on) max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions
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24N60C5M
O-220
20090209d
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET
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24N60C5M
O-220
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode Lightspeed Series IXGH 24N60CD1 VCES = 600 V IXGT 24N60CD1 IC25 = 48 A VCE sat = 2.5 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous
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24N60CD1
IC110
O-268
O-247
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Untitled
Abstract: No abstract text available
Text: □ IXYS H H ifl JL æ* X HiPerFAST IGBT with Diode Lightspeed Series IXGH 24N60CD1 IXGT 24N60CD1 V CES C25 V CE sat = 600 V = 48 A = 2.5 V Preliminary data sheet Symbol Test Conditions v CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i
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24N60CD1
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D1488
Abstract: No abstract text available
Text: IZ IJ X Y S HiPerFAST IGBT Lights peed™ Series IXGH 24N60C IXGT 24N60C V CES ^C25 V CE sat typ * fity p 600 48 2.1 60 V A V ns Preliminary data sheet Maximum Ratings Sym bol Test C onditions v CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i
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24N60C
Cto150Â
13/10Nm/lb
O-247
O-268
D1488
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ge motor 752
Abstract: No abstract text available
Text: v CES IXGH 24N60C IXGT 24N60C HiPerFAST IGBT Lightspeed™ Series ^C25 VCE sat typ t.t fity p 600 48 2.1 60 V A V ns Preliminary data sheet Maximum Ratings Symbol Test Conditions VCES V CGR T j = 25° C to 150° C 600 V T j = 25° C to 150° C; RGE = 1 m î î
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24N60C
24N60C
O-268
O-247
ge motor 752
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24N60CD1
Abstract: diode p1000
Text: DIXYS HiPerFAST IGBT with Diode Lightspeed Series IXGH 24N60CD1 IXGT 24N60CD1 VCES ^C25 V CE sat = 600 V = 48 A = 2.5 V P relim inary data sheet Symbol Test Conditions V „„ Tj = 25° C to 150° C 600 V 600 V Continuous ±20 V Transient ±30 V Tc = 25° C
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24N60CD1
24N60CD1
O-268
O-247
diode p1000
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