Untitled
Abstract: No abstract text available
Text: M ECR-14-003472 24MAR14 MP MG PA 6.6 M M
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ECR-14-003472
24MAR14
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Untitled
Abstract: No abstract text available
Text: N N N ECR-14-003472 MP PA 6.6 24MAR14 N N
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ECR-14-003472
24MAR14
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PDF
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Untitled
Abstract: No abstract text available
Text: D 24MAR14 ECR-14-003472 MP MG PA 6.6 D D
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24MAR14
ECR-14-003472
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Untitled
Abstract: No abstract text available
Text: VS-VSKU71., VS-VSKV71. Series www.vishay.com Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Thyristor/Thyristor, 75 A FEATURES • High voltage • Industrial standard package • Low thermal resistance • UL approved file E78996 • Designed and qualified for industrial level
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Original
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VS-VSKU71.
VS-VSKV71.
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si8425DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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Si8425DB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiS439DNT www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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SiS439DNT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Tape Information
Abstract: TDFN8
Text: Tape Information www.vishay.com Vishay Siliconix TDFN8 2 x 2 CARRIER TAPE 2.00 4.00 ± 0.10 A 0.25 ± 0.02 Ø 1.55 ± 0.05 1.75 ± 0.10 Ø 0.60 ± 0.05 3.50 ± 0.05 +0.30 8.00 -0.10 Bo 5° max. Ko R 0.05 max. 4.00 ± 0.10 Ao A SECTION A-A Ao = 2.25 ± 0.05
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93-5277-X
C14-0097-Rev.
24-Mar-14
Tape Information
TDFN8
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Untitled
Abstract: No abstract text available
Text: SiZ340DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) MAX. ID (A) 0.0095 at VGS = 10 V 30 a 0.0137 at VGS = 4.5 V 22 0.0051 at VGS = 10 V 40 a 0.0070 at VGS = 4.5 V
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SiZ340DT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ486EP www.vishay.com Vishay Siliconix Automotive N-Channel 75 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET power MOSFET 75 RDS(on) (Ω) at VGS = 10 V 0.026 RDS(on) (Ω) at VGS = 4.5 V 0.032 ID (A) • AEC-Q101 qualified d • 100 % Rg and UIS tested
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SQJ486EP
AEC-Q101
SQJ486EP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiSA14DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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SiSA14DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si5936DU www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C
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Si5936DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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S14064
Abstract: No abstract text available
Text: SPICE Device Model SiJ478DP www.vishay.com Vishay Siliconix N-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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Original
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SiJ478DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
S14064
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PDF
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sq2308
Abstract: SQ2308CES-T1-GE3
Text: SQ2308CES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) (Ω) at VGS = 10 V 0.150 RDS(on) (Ω) at VGS = 4.5 V 0.164 ID (A) • AEC-Q101 Qualified c • 100 % Rg and UIS Tested
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SQ2308CES
AEC-Q101
OT-23
O-236)
SQ2308CES-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
sq2308
SQ2308CES-T1-GE3
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PDF
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PTN0805
Abstract: No abstract text available
Text: PTN www.vishay.com Vishay Dale Thin Film Commercial Thin Film Chip Resistor, Surface Mount Chip FEATURES • • • • Actual Size 1505 These chip resistors are available in both “top side” and “wraparound” termination styles in a variety of sizes. They
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MIL-PRF-55342.
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
PTN0805
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Untitled
Abstract: No abstract text available
Text: VS-VSKT91., VS-VSKH91., VS-VSKL91., VS-VSKN91. Series www.vishay.com Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 95 A FEATURES • High voltage • Industrial standard package • Low thermal resistance
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Original
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VS-VSKT91.
VS-VSKH91.
VS-VSKL91.
VS-VSKN91.
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiA931DJ www.vishay.com Vishay Siliconix Dual P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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Original
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SiA931DJ
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiS443DN www.vishay.com Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SiS443DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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EDGS
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . WIREWOUND RESISTORS EDGS EDGS: Stud Mount Version of EDGU Edgewound Resistor KEY BENEFITS • Stud mount offers an alternative mounting configuration of the EDGU • Continuous duty operation up to 85 A • Short term overload of 10x rated power for 5 s
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VMN-PT0423-1408
EDGS
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SQJ461EP www.vishay.com Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C
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Original
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SQJ461EP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-VSKU91., VS-VSKV91. Series www.vishay.com Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Thyristor/Thyristor, 95 A FEATURES • High voltage • Industrial standard package • Low thermal resistance • UL approved file E78996 • Designed and qualified for industrial level
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Original
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VS-VSKU91.
VS-VSKV91.
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si8424CDB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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Original
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Si8424CDB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-VSKU105., VS-VSKV105. Series www.vishay.com Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Thyristor/Thyristor, 105 A FEATURES • High voltage • Industrial standard package • UL approved file E78996 • Low thermal resistance • Designed and qualified for industrial level
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Original
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VS-VSKU105.
VS-VSKV105.
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ486EP www.vishay.com Vishay Siliconix Automotive N-Channel 75 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET power MOSFET 75 RDS(on) (Ω) at VGS = 10 V 0.026 RDS(on) (Ω) at VGS = 4.5 V 0.032 ID (A) • AEC-Q101 qualified d • 100 % Rg and UIS tested
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Original
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SQJ486EP
AEC-Q101
SQJ486EP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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marking s14 sot23
Abstract: No abstract text available
Text: SQ2308CES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) (Ω) at VGS = 10 V 0.150 RDS(on) (Ω) at VGS = 4.5 V 0.164 ID (A) • AEC-Q101 Qualified c • 100 % Rg and UIS Tested
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Original
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SQ2308CES
AEC-Q101
OT-23
O-236)
SQ2308CES-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
marking s14 sot23
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PDF
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