Si2315BDS-T1-E3
Abstract: No abstract text available
Text: Si2315BDS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available • TrenchFET Power MOSFETs: 1.8 V Rated RDS(on) (Ω) ID (A) 0.050 at VGS = - 4.5 V - 3.85 0.065 at VGS = - 2.5 V - 3.4 RoHS*
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Si2315BDS
O-236
OT-23)
Si2315BDS-T1
Si2315BDS-T1-E3
Si2315BDS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
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Si2304BDS
Abstract: Si2304BDS-T1-E3
Text: Si2304BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free Option Available Qg (Typ.) RoHS 2.6 COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View
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Si2304BDS
O-236
OT-23)
Si2304BDS-T1-E3
Si2304BDS-T1-GE3
11-Mar-11
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SC-89
Abstract: Si1026X
Text: Si1026X Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS(min) (V) RDS(on) (Ω) VGS(th) (V) ID (mA) 60 1.40 at VGS = 10 V 1 to 2.5 500 • Halogen-free Option Available • Low On-Resistance: 1.40 Ω RoHS • Low Threshold: 2 V (typ.)
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Si1026X
SC-89
08-Apr-05
SC-89
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Untitled
Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Chip LED with Right Angle Lens 27-21/R6C-AP1Q2B/3C Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow
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27-21/R6C-AP1Q2B/3C
SZDSE-271-R10
24-Mar-08
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Si2306BDS
Abstract: Si2306BDS-T1-E3 Si2306BDS-T1-GE3
Text: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0
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Si2306BDS
O-236
OT-23)
Si2306BDS-T1-E3
Si2306BDS-T1-GE3
11-Mar-11
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SI2306BDS-T1-E3
Abstract: Si2306BDS-T1-GE3 SI2306 Si2306BDS
Text: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0
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Si2306BDS
O-236
OT-23)
Si2306BDS-T1-E3
Si2306BDS-T1-GE3
18-Jul-08
SI2306
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Si1056X
Abstract: SC-89
Text: Si1056X Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.089 at VGS = 4.5 V 1.32 0.098 at VGS = 2.5 V 1.26 0.121 at VGS = 1.8 V Qg (Typ.) • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested
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Si1056X
SC-89
Si1056X-T1-E3
Si1056X-T1-GE3
18-Jul-08
SC-89
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SI1050X-T1
Abstract: SC-89 Si1050X Si1050
Text: Si1050X Vishay Siliconix N-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.086 at VGS = 4.5 V 1.34a 0.093 at VGS = 2.5 V 1.29 Qg (Typ.) 1.23 0.120 at VGS = 1.5 V 0.7 RoHS COMPLIANT 7.1 0.102 at VGS = 1.8 V • Halogen-free Option Available
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Si1050X
SC-89
Si1050X-T1-E3
Si1050X-T1-GE3
18-Jul-08
SI1050X-T1
SC-89
Si1050
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SC-89
Abstract: Si1023X Si1023X-T1-E3
Text: Si1023X Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 • Halogen-free Option Available RDS(on) (Ω) ID (mA) 1.2 at VGS = - 4.5 V - 350 • TrenchFET Power MOSFET: 1.8 V Rated 1.6 at VGS = - 2.5 V - 300 • Very Small Footprint
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Si1023X
OT-563
SC-89
08-Apr-05
SC-89
Si1023X-T1-E3
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Untitled
Abstract: No abstract text available
Text: Si1035X Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel RDS(on) (Ω) ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 8 at VGS = - 4.5 V - 150 12 at VGS = - 2.5 V
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Si1035X
20ded
08-Apr-05
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sC89-6
Abstract: No abstract text available
Text: Si1040X Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V RDS(on) (Ω) ID (A) 0.625 at VIN = 4.5 V ± 0.43 1.8 to 8 0.890 at VIN = 2.5 V ± 0.36 1.25 at VIN = 1.8 V ± 0.3 Si1040X 4 2, 3 S2 Halogen-free Option Available TrenchFET Power MOSFET
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Si1040X
SC89-6
08-Apr-05
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si2316ds-t1-e3
Abstract: No abstract text available
Text: Si2316DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.050 at VGS = 10 V 3.4 0.085 at VGS = 4.5 V 2.6 • Halogen-free Option Available • TrenchFET Power MOSFET Pb-free Available RoHS* APPLICATIONS
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Si2316DS
O-236
OT-23)
Si2316DS-T1
Si2316DS-T1-E3
Si2316DS-T1-GE3
11-Mar-11
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SI2302ADS-T1-GE3
Abstract: Si2302ADS Si2302ADS-T1 Si2302ADS-T1-E3
Text: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 S
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Si2302ADS
O-236
OT-23)
Si2302ADS-T1
Si2302ADS-T1-E3
Si2302ADS-T1-GE3
18-Jul-08
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Si7194DP
Abstract: S8061
Text: SPICE Device Model Si7194DP Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7194DP
18-Jul-08
S8061
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Untitled
Abstract: No abstract text available
Text: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0
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Si2306BDS
O-236
OT-23)
Si2306BDS-T1-E3
Si2306BDS-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: Si2311DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.5 -8 0.072 at VGS = - 2.5 V - 2.8 0.120 at VGS = - 1.8 V - 2.0 • Halogen-free Option Available • TrenchFET Power MOSFET
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Si2311DS
O-236
OT-23)
Si2311DS-T1-E3
Si2311DS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: Si2311DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.5 -8 0.072 at VGS = - 2.5 V - 2.8 0.120 at VGS = - 1.8 V - 2.0 • Halogen-free Option Available • TrenchFET Power MOSFET
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Si2311DS
O-236
OT-23)
Si2311DS-T1-E3
Si2311DS-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.200 at VGS = - 10 V - 1.64 0.380 at VGS = - 4.5 V - 1.0 VDS (V) - 30 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)
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Si2303BDS
O-236
OT-23)
Si2303BDS-T1
Si2303BDS-T1-E3
Si2303BDS-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
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Si2303BDS
Abstract: Si2303BDS-T1 Si2303BDS-T1-E3
Text: Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.200 at VGS = - 10 V - 1.64 0.380 at VGS = - 4.5 V - 1.0 VDS (V) - 30 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)
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Si2303BDS
O-236
OT-23)
Si2303BDS-T1
Si2303BDS-T1-E3
Si2303BDS-T1-GE3
08-Apr-05
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74285
Abstract: SI1073X
Text: New Product Si1073X Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.173 at VGS = - 10 V - 0.98a 0.243 at VGS = - 4.5 V - 0.83 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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Si1073X
SC-89
Si1073X-T1-E3
Si1073X-T1-GE3
18-Jul-08
74285
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Untitled
Abstract: No abstract text available
Text: New Product Si4943CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES • TrenchFET Power MOSFET • 100 % Rg and UIS Tested PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0192 at VGS = - 10 V -8 0.0330 at VGS = - 4.5 V -8 VDS (V) - 20 Qg (Typ.) RoHS
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Si4943CDY
Si4943CDY-T1-E3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si2315BDS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available • TrenchFET Power MOSFETs: 1.8 V Rated RDS(on) (Ω) ID (A) 0.050 at VGS = - 4.5 V - 3.85 0.065 at VGS = - 2.5 V - 3.4 RoHS*
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Si2315BDS
O-236
OT-23)
Si2315BDS-T1
Si2315BDS-T1-E3
Si2315BDS-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: 4 AMP 1471-9 R EV 3 1 M A R 2 0 0 0 3 2 1 LOC D IS T CM 0 0 R E V IS IO N S P LTR B D E S C R IP T IO N REVISED DATE DWN 24MAR08 PER E C 0 - 0 8 - 0 0 6 9 6 5 A PVD HMR cc D 1 1.8 [.46] 1\ MATERIAL: NYLON, 10.8 [.43] 5.8 9.8 [.39] □ □ ONLY FOR 1 5 8 6 0 1 9 - 2
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24MAR08
UL94V-0.
5860B
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Untitled
Abstract: No abstract text available
Text: 3 4 TH IS DRAWING IS U N P U B L IS H E D . COPYRIGHT RELEASED FOR A LL PU B LIC ATIO N RIG HTS 2 - ,- R E V IS IO N S R E S ER V ED . BY TYCO ELECTRONICS CORPORATION. P LTR A D E S C R IP TIO N REVISED DATE DWN 24MAR08 PER E C 0 - 0 8 - 0 0 6 8 8 8 APVD
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24MAR08
76/jm
27jum
54/jm
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