Untitled
Abstract: No abstract text available
Text: 1 2 FO-55110-B HONEYWELL PART NUMBER REV DOCUMENT D 0055940 CHANGED BY SJK CHECK 24AUG09 CMH 8PA81-TL PRODUCT CODE: SGL6275 B B CENTER POSITIVE, T1 3/4, MIDGET FLANGE LED COLOR:RED NOTES: 1 - THIS PACKET CONSISTS OF A REPLACEMENT LED TO BE USED WITH 4TL836-3D
|
Original
|
PDF
|
FO-55110-B
24AUG09
8PA81-TL
SGL6275
4TL836-3D
19JUN09
5M-1994
07FEB07
|
Untitled
Abstract: No abstract text available
Text: WTC2302 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 2.3 AMPERES 3 DRAIN P b Lead Pb -Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@VGS =4.5V *Rugged and Reliable *Simple Drive Requirement
|
Original
|
PDF
|
WTC2302
OT-23
OT-23
24-Aug-09
|
SIR164DP
Abstract: A7282 65060 spice model 740
Text: SPICE Device Model SiR164DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SiR164DP
18-Jul-08
A7282
65060
spice model 740
|
SI4823DY
Abstract: No abstract text available
Text: SPICE Device Model Si4823DY Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
Si4823DY
18-Jul-08
|
si4154
Abstract: SI415
Text: SPICE Device Model Si4154DY Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
Si4154DY
18-Jul-08
si4154
SI415
|
Untitled
Abstract: No abstract text available
Text: 464 MHz SAW Filter 5.68 MHz Bandwidth Part Number: SF0464BA02647S DESCRIPTION • • • Miniature 464 MHz SAW Filter with 5.68 MHz bandwidth. 5 x 7 mm LCC package. RoHS compliant TYPICAL PERFORMANCE . . 1 . 2 . 3 - . 4 - B d t t A . 5 . 6 . 7 . 8 . 4
|
Original
|
PDF
|
SF0464BA02647S
DSSF0464BA02647S
24-AUG-09
Par2647S
|
65075
Abstract: No abstract text available
Text: SPICE Device Model SiE882DF Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SiE882DF
18-Jul-08
65075
|
Si7145DP
Abstract: si7145 EFB810-3/4-3/Si7145DP
Text: SPICE Device Model Si7145DP Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
Si7145DP
18-Jul-08
si7145
EFB810-3/4-3/Si7145DP
|
D 1556
Abstract: SiR416DP
Text: SPICE Device Model SiR416DP Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SiR416DP
18-Jul-08
D 1556
|
transistor aaa
Abstract: No abstract text available
Text: Device Orientation Vishay Siliconix Device Orientation for PowerPAIRTM DEVICE ORIENTATION PACKAGE METHOD PowerPAIR 6 x 3.7 T1 PowerPAIR 6 x 5 T1 AAA BBB CC AAA BBB CC AAA BBB CC AAA BBB CC AAA BBB CC User direction of feed * Letters are to show orientation only. Number of characters may vary.
|
Original
|
PDF
|
Specification-PACK-0007-23
C09-0415,
24-Aug-09
transistor aaa
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiS438DN Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SiS438DN
18-Jul-08
|
SUD35N10-26P-GE3
Abstract: SUD35N10-26PGE3
Text: SPICE Device Model SUD35N10-26P-GE3 Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SUD35N10-26P-GE3
18-Jul-08
SUD35N10-26P-GE3
SUD35N10-26PGE3
|
Si5471DC
Abstract: No abstract text available
Text: SPICE Device Model Si5471DC Vishay Siliconix P-Channel 20-V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the
|
Original
|
PDF
|
Si5471DC
18-Jul-08
|
d 1554
Abstract: No abstract text available
Text: SPICE Device Model SiJ400DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SiJ400DP
18-Jul-08
d 1554
|
|
|
65070
Abstract: No abstract text available
Text: SPICE Device Model SiR406DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SiR406DP
18-Jul-08
65070
|
Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC R EVISIO N S DIST E P B DESCRIPTION DATE DWN 08DEC04 24AUG09 EBDO—0 4 6 3 —04 F F 1 REVISED PER ECO —09 —0 2 0 6 8 9 NOTES: A LTR APVD RS MG KK AEG FOR S T R IP V E R S IO N S E E DWG. 1 6 4 1 5 3 . U N D E R C O A T IN G : 1 , 3 /Am Ni.
|
OCR Scan
|
PDF
|
08DEC04
24AUG09
164169PARTNUMBER
31MAR2000
|
Untitled
Abstract: No abstract text available
Text: DO NOT M ETRIC SCA LE DIMENSIONS IN m m PRO JEC TIO N R EVISIO N S 3 1 ,5 P LTR G1 D E S C R IP T I O N DATE REVISED PER E C O -0 9 -0 2 0 6 8 9 S P R I N G :STAI N L E S S S T E E L 24AUG09 DWN APVD KK AEG 2 7 ,5 -o- -o- E1 ,6 THIRD ANGLE E D IA . STRIP LOOSE-PIECE
|
OCR Scan
|
PDF
|
24AUG09
|
114-57018
Abstract: 1775442-1 ECR-09-01
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2009 RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. By TYCO ELECTRONICS CORPORATION. REVISIONS DW A1 JL WK 24AUG09 REVISED ECR— 0 9 — 0 1 8 8 6 6 5.0 0 .1 5 LO CN O -H in 00 Ô il o oo cn CN o -H y o ¡ oo ud
|
OCR Scan
|
PDF
|
24AUG09
X-1775441-X.
31MAR2000
114-57018
1775442-1
ECR-09-01
|
Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL INTERNATIONAL RIGHTS RESERVED. DIST REVISIONS H LTR G1 D G2 DESCRIPTION DATE EC R - 08- 014314 DWN APVD 23-09-08 AEG WRV 24AUG09 KK AEG REVISED PER E C 0 - 0 9 - 0 2 0 6 8 9
|
OCR Scan
|
PDF
|
24AUG09
24APR78
|
Untitled
Abstract: No abstract text available
Text: 4 3 DRAWING MADE IN THIRD ANG LE PR O JEC TIO N T H IS D R A W IN G IS U N P U B L I S H E D . C CO PYR IG HT 19 R E L E A S E D FOR P UB LIC ATIO N BY AMP IN C O R P O R A T E D . A L L IN T E R N A T IO N A L 2 D IS T LOC ,1 9 50 Ah R IG H TS R E S E R V E D .
|
OCR Scan
|
PDF
|
ECO-09-020774
24AUG09
|
Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FOR P U B L IC A T IO N ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S R IG H T S RESERVED. C O R P O R A T IO N . D .027 ~ T~ .3 20 C C REF "A” S P A C E S @ . 100 + .0 0 3 £ 100 _ <><> “
|
OCR Scan
|
PDF
|
CO87331-2
|
Untitled
Abstract: No abstract text available
Text: 6 7 THIS DRAWING IS UNPUBLISHED. I U / COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 4 2 3 - ALL RIGHTS RESERVED. LOC DIST AD 0 0 REVISIONS P LTR E2 E3 DESCRIPTION DATE DWN APVD REVISED PER E C O - 07- 000244 1 /1 7 /0 7 ss NE REVISED PER E C 0 - 0 9 - 0 2 0 9 3 5
|
OCR Scan
|
PDF
|
24AUG09
31MAR2000
30MAR99
|
Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC DIST AD 00 ALL RIGHTS RESERVED. R E VIS IO N S LTR THE NOTED DIMENSIONS APPLY AT THE INTERSECTION OF THE POST AND HOUSING DATE DWN APVD I6AU G 05
|
OCR Scan
|
PDF
|
31MAR2000
|
Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. £ D THE NOTED DIMENSION APPLIES AT THE INTERSECTION OF THE POST AND HOUSING POINT OF MEASUREMENT FOR PLATING THICKNESS. POSTS: .000030 GOLD IN CONTACT AREA .0 0 0 1 0 0 - , 0 0 0 2 0 0 MATTE
|
OCR Scan
|
PDF
|
27DEC2007
ECO-09-021826
24AUG09
T103167-0
31MAR2000
|