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    0F21

    Abstract: 88DE
    Text: 1 23456789ABCDE5FE58C85CE9E 123454678945A6BC E48 1 83369 1 8534369 !354C5E"4 83369C1   1 23456457 1C#694894 C$8538 C%8453EC#&E5E485343 'C#6998465C84E3 C694397    ' 1 83369C1   89AB6CBD6E BA+C


    Original     		PDF 23456789ABCDE5F 123454678945A6BC 369C1 89AB6CBD6E CE58C8+ 348FC46CE996 23456789ABC 5397C4 E4369C056 0F21 88DE

    U2401

    Abstract: 73e42 D1432 4932 74C22
    Text: 1232456773489A4B1CDEF4 23456789ABCDE1 1 F2F1171CF411A3231212F1A141 311C324 4 4 E !"1 C! * &14 +!#1 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 4 174439445 !49"74#7$74 2374#74%744394&D4'474$62(7%4


    Original     		PDF 1232456773489A4B1CDEF 23456789ABCDE1 171CF 453AE4! I40E7D14 111111111111111111111123456789ABCDE1 5Q4394P 4FF44 U2401 73e42 D1432 4932 74C22

    63A36

    Abstract: No abstract text available
    Text: 1 1111111111111 111111 1 1111111111111 1 1111111111111 1 1111111111111 1 1 23456789ABCCCDEFEECD C CCCCCCCCCCC C CCCCCCCC C C EC EFC3C !C5""# 123456 +/A*03A+*/1 23467891 13 1BDE1


    Original     		PDF 123456789ABC 23456789ABC1DE1F1E 63A36

    Untitled

    Abstract: No abstract text available
    Text: 1 111111111111111 1111111 1 111111111111111 1 111111111111111 1 111111111111111 1 1 23456789ABCDC1EFF3A41   1111 !" "12# 123314567891A758BCD814E1F3D167D1F1C5A36 $1%&&'13 1 7 * &+,-./1(7)'1F9%2A019'11 &+,"1 " 


    Original     		PDF 23456789ABCDC1EFF3 123314567891A758BCD814E1F3 167D1 2A019 23456789ABCDC 0D81C6A 1571A D1456781 5718D 1195B

    Untitled

    Abstract: No abstract text available
    Text: 5mm T-1 3/4 Ambient Light Sensor 1 1 1 1 1 1 1 1 23456789ABC5CD1 1 1 1 Features ‧Excellent IR-Cut performance ‧Close responsively to the human eye spectrum ‧Light to Current, analog output ‧Good output linearity across wide illumination range ‧Low sensitivity variation across various light sources


    Original     		PDF 23456789ABC5CD1 ALS-PDIC243-3B DLS-0000010

    Untitled

    Abstract: No abstract text available
    Text: 12341567689A58BC4DE5 1 5 EC9F3FF512E568958E9FA55 B1FC4A5539F8512355 55 5 1 1 23456789ABCDCEFE 5 5 2 1 1 1 1 1 1 1 1 


    Original     		PDF 12341567689A58BC4DE5 E568958E9FA55 23456789ABCDCEFE 523D7% 4792CDE 23473789ABCDC1 12345672892A2BCD3EFE

    667 ecb

    Abstract: verilog code for implementation of des verilog code for des tsmc sram
    Text: FIPS 46-3 Standard Compliant Encryption/Decryption performed in 48 cycles ECB mode DES3 Up to 168 bits of security Triple Data Encryption Standard Core Verilog IP Core The DES3 core implements the Triple Data Encryption Standard (DES3) documented in the U.S. Government publication FIPS 46-3.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR Table of Contents1. 2. 3. 4. 5. 6. 7. 8. GENERAL DESCRIPTION . 4 FEATURES . 4


    Original     		PDF W94AD6KB W94AD2KB A01-004

    A1833

    Abstract: No abstract text available
    Text: Advance‡ 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 banks MT46H256M16L2 – 32 Meg x 16 x 4 banks x 2 MT46H64M32LF – 16 Meg x 32 x 4 banks MT46H128M32L2 – 16 Meg x 32 x 4 banks x 2 MT46H256M32L4 – 16 Meg x 32 x 4 banks x 4


    Original     		PDF MT46H128M16LF MT46H256M16L2 MT46H64M32LF MT46H128M32L2 MT46H256M32L4 09005aef83a73286 A1833

    Untitled

    Abstract: No abstract text available
    Text: July 2007 HYB18M256320CFX–7.5 HYE18M256320CFX–7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM Data S heet Rev.1.03 Data Sheet HY[B/E]18M256320CFX–7.5 256-Mbit DDR Mobile-RAM HYB18M256320CFX–7.5, HYE18M256320CFX–7.5 Revision History: Rev.1.03, 2007-07


    Original     		PDF HYB18M256320CFX HYE18M256320CFX 256-Mbit 18M256320CFX

    MT46H64M16

    Abstract: 6S55 MT46H64M16LF
    Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 Banks MT46H32M32LF – 8 Meg x 32 x 4 Banks Features Options • Vdd/Vddq – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)


    Original     		PDF MT46H64M16LF MT46H32M32LF 09005aef82ce3074 MT46H64M16 6S55 MT46H64M16LF

    s11 stopping compound

    Abstract: DEF01
    Text: 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)


    Original     		PDF 128Mb: MT46H8M16LF MT46H4M32LF 138ns. 09005aef8331b3e9/Source: 09005aef8331b3ce s11 stopping compound DEF01

    Untitled

    Abstract: No abstract text available
    Text: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF– 8 Meg x 16 x 4 banks MT48H16M32LF – 4 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/mobile Table 1: Features


    Original     		PDF 512Mb: MT48H32M16LF­ MT48H16M32LF 09005aef81ca5de4/Source: 09005aef81ca5e03 MT48H32M16LF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-11464-1E MEMORY Consumer FCRAMTM CMOS 512M Bit 4 bank x 2M word x 64 bit Consumer Applications Specific Memory for SiP MB81EDS516445 • DESCRIPTION The Fujitsu MB81EDS516445 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double


    Original     		PDF DS05-11464-1E MB81EDS516445 MB81EDS516445 64-bit

    circuit diagram of ddr ram

    Abstract: HYB18M1G320BF
    Text: March 2007 HYB18M 1G 320 B F– 7 . 5 HYE18M 1G 320 B F– 7 . 5 DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM RoHS compliant Data S heet Rev.1.00 Data Sheet HY[B/E]18M1G320BF 1-Gbit DDR Mobile-RAM HYB18M1G320BF–7.5, HYE18M1G320BF–7.5, Revision History: 2007-03, Rev.1.00


    Original     		PDF HYB18M HYE18M 18M1G320BF HYB18M1G320BF HYE18M1G320BF 02022006-J7N7-GYFP circuit diagram of ddr ram

    ELPIDA lpddr

    Abstract: 1GB-x16 samsung lpddr LPDDR2 SDRAM samsung MT46H64M16LF cross infineon power cycling
    Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)


    Original     		PDF MT46H64M16LF MT46H32M32LF 09005aef83d9bee4 ELPIDA lpddr 1GB-x16 samsung lpddr LPDDR2 SDRAM samsung MT46H64M16LF cross infineon power cycling

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11463-2E MEMORY Consumer FCRAMTM CMOS 512M Bit 4 bank x 2M word x 64 bit Consumer Applications Specific Memory for SiP MB81EDS516545 • DESCRIPTION The Fujitsu MB81EDS516545 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double


    Original     		PDF DS05-11463-2E MB81EDS516545 MB81EDS516545 64-bit

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)


    Original     		PDF 128Mb: MT46H8M16LF MT46H4M32LF 09005aef8331b3e9 09005aef8331b3ce

    Am29BDD160GB64C

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION Am29BDD160G 16 Megabit 1 M x 16-bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURE ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while


    Original     		PDF Am29BDD160G 16-bit/512 32-Bit) Am29BDD160GB64C

    am29f date code markings

    Abstract: am29lv date code markings Am29BDD160GB64C
    Text: ADVANCED INFORMATION Am29BDD160G 16 Megabit 1 M x 16-bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURE ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while


    Original     		PDF Am29BDD160G 16-bit/512 32-Bit) am29f date code markings am29lv date code markings Am29BDD160GB64C

    Untitled

    Abstract: No abstract text available
    Text: 512Mb: x16, x32 Automotive LPDDR SDRAM Features Automotive LPDDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks MT46H16M32LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 32 Meg x 16 8 Meg x 16 x 4 banks


    Original     		PDF 512Mb: MT46H32M16LF MT46H16M32LF MT46H16M32LG 60-ball 90-ball 09005aef846e285e 512mb

    T67M

    Abstract: ELPIDA mobile dram LPDDR2
    Text: 512Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks MT46H16M32LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 32 Meg x 16 8 Meg x 16 x 4 banks


    Original     		PDF 512Mb: MT46H32M16LF MT46H16M32LF MT46H16M32LG 09005aef83dd2b3e T67M ELPIDA mobile dram LPDDR2

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11463-2E MEMORY Consumer FCRAMTM CMOS 512M Bit 4 bank x 2M word x 64 bit Consumer Applications Specific Memory for SiP MB81EDS516545 • DESCRIPTION The Fujitsu MB81EDS516545 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double


    Original     		PDF DS05-11463-2E MB81EDS516545 MB81EDS516545 64-bit

    lg crt monitor circuit diagram

    Abstract: LBIT 204 NS32081 NS32CG160 barrel shifter block diagram VCT 492 x LM 3558 symbol
    Text: NOV 1 1 1991 PRELIMINARY July 1991 NS32CG160-15/NS32CG160-20/NSC32CG160-25 32-Bit Integrated System Processor General Description Features The N S32C G 160 is a highly-integrated m em ber of th e Se­ ries 3 2 0 0 0 /E P tm fam ily o f N atio n a l's Em bedded System


    OCR Scan     		PDF NS32CG160-15/NS32CG160-20/NSC32CG160-25 32-Bit NS32CG160 32000/EPTM 16-bit 16-function 15-level lg crt monitor circuit diagram LBIT 204 NS32081 barrel shifter block diagram VCT 492 x LM 3558 symbol