Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2301 SOT23 Search Results

    2301 SOT23 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    SF Impression Pixel

    2301 SOT23 Price and Stock

    Others CJ2301/SOT-23

    INSTOCK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange CJ2301/SOT-23 421,720
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    2301 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: WT-2301 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free - 3.4 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <60 mΩ @VGS =-4.5V R DS(ON) <80 mΩ @VGS =-2.5V


    Original     		PDF WT-2301 OT-23 OT-23

    MOSFET 2301

    Abstract: s01 sot-23 mosfet MOSFET 2301 SOT-23 sot 23 S01 2301 SOT-23 2301 marking sot-23 WT2301 WT-2301 s1815 2301 marking
    Text: WT-2301 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT - 3.4 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low RDS ON R DS(ON) <60 mΩ @VGS =-4.5V R DS(ON) <80 mΩ @VGS =-2.5V R DS(ON) <105 m Ω@VGS =-1.8V


    Original     		PDF WT-2301 OT-23 OT-23 MOSFET 2301 s01 sot-23 mosfet MOSFET 2301 SOT-23 sot 23 S01 2301 SOT-23 2301 marking sot-23 WT2301 WT-2301 s1815 2301 marking

    Untitled

    Abstract: No abstract text available
    Text: WT-2301 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT - 3.4 AMPERS 1 Features: DRAIN SOUCE VOLTAGE - 20 VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <60 mΩ @VGS =-4.5V R DS(ON) <80 mΩ @VGS =-2.5V


    Original     		PDF WT-2301 OT-23 OT-23

    s2301

    Abstract: No abstract text available
    Text: S T S 2301 S amHop Microelectronics C orp. J UL.30 2004 ver1.1 P -C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S -20V ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.


    Original     		PDF OT-23 OT-23 s2301

    S2301

    Abstract: No abstract text available
    Text: S T S 2301 Green Product S amHop Microelectronics C orp. J UL.30 2004 ver1.1 P -C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S -20V ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max


    Original     		PDF OT-23 OT-23 S2301

    marking PA SOT23-6

    Abstract: Marking f1 SOT23-6 T1 MARKING SOT23-6 sot23-6 package marking PA SOT23-6 MARKING pa NCS2302 MARKING T1 SOT23-6 NCS2303SN2T1 marking 515 sot23-6 sot23-6 pa
    Text: NCS2300 Series Advance Information Low Power Comparators The NCS2300 Series is an ultra−low power comparator family. These devices consume only 11 mA of supply current. They operate at a wide voltage range of 1.7 V to 12 V. Additional features include no


    Original     		PDF NCS2300 OT23-5 OT23-6 NCS2301/3 NCS2300/D marking PA SOT23-6 Marking f1 SOT23-6 T1 MARKING SOT23-6 sot23-6 package marking PA SOT23-6 MARKING pa NCS2302 MARKING T1 SOT23-6 NCS2303SN2T1 marking 515 sot23-6 sot23-6 pa

    SSM2301

    Abstract: No abstract text available
    Text: PROCESS CHANGE NOTIFICATION PCN Number: 040101 Notice Type: Minor Customer Name: General - to all customers Customer Number: Customer Contact: Marketing Part Number: SSM2301 G N through SSM2306(G)N, SS431(G)N, SS432(G0N Notification dated: April 1, 2004 Change Effective date: Implemented January 1, 2004


    Original     		PDF SSM2301 SSM2306 SS431 SS432 OT-23 OT-23-3 OT-23-6 -SOP-OP-015

    Untitled

    Abstract: No abstract text available
    Text: LTC2301/LTC2305 1-/2-Channel, 12-Bit ADCs with I2C Compatible Interface DESCRIPTION FEATURES n n n n n n n n n n n n n n 12-Bit Resolution Low Power: 1.5mW at 1ksps, 35 W Sleep Mode 14ksps Throughput Rate Internal Reference Low Noise: SNR = 73.5dB Guaranteed No Missing Codes


    Original     		PDF LTC2301/LTC2305 12-Bit 2301/LTC2305 12-pin

    Diode SOT-23 marking 15d

    Abstract: LTC2309 LTC2305 5c sot-23 731D 2301 so8 LT1790A-4 LTC1790 23015 SOT-23 a6
    Text: LTC2301/LTC2305 1-/2-Channel, 12-Bit ADCs with I2C Compatible Interface DESCRIPTION FEATURES n n n n n n n n n n n n n n 12-Bit Resolution Low Power: 1.5mW at 1ksps, 35 W Sleep Mode 14ksps Throughput Rate Internal Reference Low Noise: SNR = 73.5dB Guaranteed No Missing Codes


    Original     		PDF LTC2301/LTC2305 12-Bit 14ksps LTC2301) LTC2305) 12-Pin LTC2451/LTC2453 Diode SOT-23 marking 15d LTC2309 LTC2305 5c sot-23 731D 2301 so8 LT1790A-4 LTC1790 23015 SOT-23 a6

    marking code 10 lead msop package analog devices

    Abstract: No abstract text available
    Text: LTC2301/LTC2305 1-/2-Channel, 12-Bit ADCs with I2C Compatible Interface DESCRIPTION FEATURES n n n n n n n n n n n n n n 12-Bit Resolution Low Power: 1.5mW at 1ksps, 35 W Sleep Mode 14ksps Throughput Rate Internal Reference Low Noise: SNR = 73.5dB Guaranteed No Missing Codes


    Original     		PDF LTC2301/LTC2305 12-Bit 14ksps LTC2301) LTC2305) 12-Pin LTC2451/LTC2453 marking code 10 lead msop package analog devices

    Untitled

    Abstract: No abstract text available
    Text: LTC2301/LTC2305 1-/2-Channel, 12-Bit ADCs with I2C Compatible Interface DESCRIPTION FEATURES n n n n n n n n n n n n n n 12-Bit Resolution Low Power: 1.5mW at 1ksps, 35 W Sleep Mode 14ksps Throughput Rate Internal Reference Low Noise: SNR = 73.5dB Guaranteed No Missing Codes


    Original     		PDF LTC2301/LTC2305 12-Bit 14ksps LTC2301) LTC2305) 12-Pin LTC2451/LTC2453

    LTC2305

    Abstract: LTC2309 ltc2301
    Text: LTC2301/LTC2305 1-/2-Channel, 12-Bit ADCs with I2C Compatible Interface DESCRIPTION FEATURES n n n n n n n n n n n n n n 12-Bit Resolution Low Power: 1.5mW at 1ksps, 35 W Sleep Mode 14ksps Throughput Rate Internal Reference Low Noise: SNR = 73.5dB Guaranteed No Missing Codes


    Original     		PDF LTC2301/LTC2305 12-Bit 14ksps LTC2301) LTC2305) 12-Pin LTC2451/LTC2453 LTC2305 LTC2309 ltc2301

    adc 0808 pin configuration

    Abstract: Diode SOT-23 marking 15d DAC 0808 pin configuration marking code 8 lead msop package analog devices dac 0808 LTC2305 LTC2309
    Text: LTC2301/LTC2305 1-/2-Channel, 12-Bit ADCs with I2C Compatible Interface DESCRIPTION FEATURES n n n n n n n n n n n n n n 12-Bit Resolution Low Power: 1.5mW at 1ksps, 35 W Sleep Mode 14ksps Throughput Rate Internal Reference Low Noise: SNR = 73.5dB Guaranteed No Missing Codes


    Original     		PDF LTC2301/LTC2305 12-Bit 14ksps LTC2301) LTC2305) 12-Pin 20-Pin adc 0808 pin configuration Diode SOT-23 marking 15d DAC 0808 pin configuration marking code 8 lead msop package analog devices dac 0808 LTC2305 LTC2309

    Mosfet

    Abstract: SSF2301 2301 marking sot-23
    Text: SSF2301 20V P-Channel MOSFET Main Product Characteristics D VDSS -20V RDS on 60mΩ (typ.) ID -3A G S ① SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF2301 OT-23 reliabSSF2301 Mosfet SSF2301 2301 marking sot-23

    NCS2302

    Abstract: NCS2300 NCS2300SN1T1 NCS2300SN2T1 SC59 MOSFET 2302
    Text: Back NCS2300 Series Advance Information High Voltage Comparators The NCS2300 Series are ultra–low power comparators. These devices consume only 11 mA of supply current. They operate at a wide voltage range of 1.7 V to 12 V. Additional features include no output


    Original     		PDF NCS2300 NCS2301/3 r14525 NCS2300/D NCS2302 NCS2300SN1T1 NCS2300SN2T1 SC59 MOSFET 2302

    MOSFET 2301 SOT-23

    Abstract: 2301 marking sot-23 WTC2301
    Text: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.6 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <130mΩ@V GS =12V *Rugged and Reliable


    Original     		PDF WTC2301 OT-23 OT-23 12-May-05 MOSFET 2301 SOT-23 2301 marking sot-23 WTC2301

    Untitled

    Abstract: No abstract text available
    Text: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.6 AMPERE S P b Lead Pb -Free DRAIN SOUR CE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <130mΩ@V GS =12V *Rugged and Reliable


    Original     		PDF WTC2301 OT-23 OT-23 12-May-05

    sot23 nc marking

    Abstract: WTC2301
    Text: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.6 AMPERS * “G” Lead Pb -Free DRAIN SOUCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <130mΩ@V GS =12V *Rugged and Reliable


    Original     		PDF WTC2301 OT-23 OT-23 12-May-05 sot23 nc marking WTC2301

    SOT-23

    Abstract: MOSFET 2301 SOT-23 SMD WAG FMS2301 MOSFET 2301 POWER MOSFET P1 smd marking code 2301 marking sot-23
    Text: SMD MOSFET Formosa MS FMS2301 List List. 1 Package outline. 2 Features. 2


    Original     		PDF FMS2301 120sec 260sec 30sec DS-231129 SOT-23 MOSFET 2301 SOT-23 SMD WAG FMS2301 MOSFET 2301 POWER MOSFET P1 smd marking code 2301 marking sot-23

    SSF2301

    Abstract: 2301 marking sot-23
    Text: SSF2301 D DESCRIPTION The SSF2301 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES Schematic diagram


    Original     		PDF SSF2301 SSF2301 2301 marking sot-23

    IRF6100

    Abstract: 4.5v to 100v input regulator
    Text: PD - 93930E IRF6100 HEXFET Power MOSFET l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel VDSS RDS(on) max ID -20V 0.065Ω@VGS = -4.5V


    Original     		PDF 93930E IRF6100 OT-23 EIA-481 EIA-541. IRF6100 4.5v to 100v input regulator

    2301 SOT-23

    Abstract: 4.5v to 100v input regulator
    Text: PD - 93930D IRF6100 HEXFET Power MOSFET l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel VDSS RDS(on) max ID -20V 0.065Ω@VGS = -4.5V


    Original     		PDF 93930D IRF6100 OT-23 EIA-481 EIA-541. 2301 SOT-23 4.5v to 100v input regulator

    EIA-541

    Abstract: IRF6100 MOSFET 2301 SOT-23 MOSFET 2301 Diode Mark sot23 4x 4.5v to 100v input regulator
    Text: PD - 93930C IRF6100 HEXFET Power MOSFET l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel VDSS RDS(on) max ID -20V 0.065Ω@VGS = -4.5V


    Original     		PDF 93930C IRF6100 OT-23 5M-1994. EIA-541 IRF6100 MOSFET 2301 SOT-23 MOSFET 2301 Diode Mark sot23 4x 4.5v to 100v input regulator

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S NPN Silicon A F Transistors SM BTA 05 SM BTA 06 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 55 SMBTA 56 PNP Type Marking Ordering Code (tape and reel) PinC¡onfigur ation 1 2 3 SM BTA 05


    OCR Scan     		PDF 68000-A3430 Q68000-A3428 OT-23 0235bG5 fiS35tiOS