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    WTC2301 Search Results

    WTC2301 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    WTC2301 Weitron P-Channel Enhancement Mode Power MOSFET Original PDF

    WTC2301 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    WTC2301

    Abstract: No abstract text available
    Text: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.3 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <100mΩ@V GS =-4.5V *Rugged and Reliable


    Original     		PDF WTC2301 OT-23 OT-23 250uA 29-Mar-10 WTC2301

    MOSFET 2301 SOT-23

    Abstract: 2301 marking sot-23 WTC2301
    Text: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.6 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <130mΩ@V GS =12V *Rugged and Reliable


    Original     		PDF WTC2301 OT-23 OT-23 12-May-05 MOSFET 2301 SOT-23 2301 marking sot-23 WTC2301

    Untitled

    Abstract: No abstract text available
    Text: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.6 AMPERE S P b Lead Pb -Free DRAIN SOUR CE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <130mΩ@V GS =12V *Rugged and Reliable


    Original     		PDF WTC2301 OT-23 OT-23 12-May-05

    sot23 nc marking

    Abstract: WTC2301
    Text: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.6 AMPERS * “G” Lead Pb -Free DRAIN SOUCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <130mΩ@V GS =12V *Rugged and Reliable


    Original     		PDF WTC2301 OT-23 OT-23 12-May-05 sot23 nc marking WTC2301

    WTC2301

    Abstract: No abstract text available
    Text: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.3 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <100mΩ@V GS =-4.5V *Rugged and Reliable


    Original     		PDF WTC2301 OT-23 OT-23 250uA 20-Aug-09 WTC2301