MTP2N35
Abstract: 1RF710
Text: ., One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRF710-713 MTP2N35/2N40 N-Channel Power MOSFETs, 2.25 A, 350-400 V Power And Discrete Division Description These devices are n-channel, enhancement mode, power
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IRF710-713
MTP2N35/2N40
O-220AB
IRF710
IRF711
IRF712
IRF713
MTP2N35
MTP2N40
TR-58
MTP2N35
1RF710
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Untitled
Abstract: No abstract text available
Text: PD - 9.1505A International I R Rectifier IRF7316 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated S IQ E ji-i / p T Voss = -30V RDS on = 0.058Q Top View Description
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IRF7316
DD2b234
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IRF710
Abstract: 1RF710 2N40 TT 2158 IRF710-713 MTP2N35 MTP2N40 Ac,713
Text: 3469674 FAIRCHILD SEMICONDUCTOR A4 -—- y.OOSTlULi ¿!^q J/LB d 4 b [ib74 IRF710-713 T MTP2N35/2N40 N-Channel Power MOSFETs, 2.25 A, 350-400 V £ Û S S Ü ii£ A Schlumberger Company Power And Discrete Division
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MTP2N35/2N40
O-220AB
IRF710/712
MTP2N40
IRF711/TO
IRF710-713
IRF710-713
0087m.
IRF710
1RF710
2N40
TT 2158
MTP2N35
Ac,713
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1RF7105
Abstract: 1RF710 irf7105 mosfet MOSFET C65 irf7105 ior 050a
Text: PD - 9.1097B International IOR Rectifier IRF7105 HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Dual N and P Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching 'P-CHANNEL MOSFET !
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1097B
IRF7105
1RF7105
1RF710
irf7105 mosfet
MOSFET C65
irf7105
ior 050a
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1RF710
Abstract: No abstract text available
Text: N-Channel Power MOSFETs IRF510 IRF512 IRF513 MTP4N08 MTP4N10 IRF612 MTP2N18 MTP2N20 IRF711 •d nC Qfl Max C|M (pF) M in Max Co m (PF) Min Max 7.5 200 100 30 A1 2 7.5 200 100 30 A1 0.8 2 7.5 200 100 30 A1 0.25 0.8 2 7.5 200 100 30 4.5 1 0.8 2 7.5 200 100
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IRF510
IRF511
IRF512
IRF513
MTP4N08
MTP4N10
IRF610
IRF611
IRF612
IRF613
1RF710
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