M29W320DT
Abstract: M29W320D M29W320DB TFBGA48
Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns
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M29W320DT
M29W320DB
TSOP48
TFBGA63
TFBGA48
M29W320DT
M29W320D
M29W320DB
TFBGA48
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A65A
Abstract: No abstract text available
Text: LMH6642/6643/6644 3V, Low Power, 130MHz, 75mA Rail-to-Rail Output Amplifiers General Description The LMH664X family true single supply voltage feedback amplifiers offer high speed 130MHz , low distortion (−62dBc), and exceptionally high output current (approximately 75mA) at low cost and with reduced power consumption when compared against existing devices with similar
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LMH6642/6643/6644
130MHz,
LMH664X
130MHz)
-62dBc)
AN-1240:
2-Jul-02
9-Aug-2002]
A65A
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PDF
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FB300
Abstract: M50FW080 PLCC32 TSOP32
Text: M50FW080 8 Mbit 1M x8, Uniform Block 3V Supply Firmware Hub Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 3V to 3.6V for Program, Erase and Read Operations – VPP = 12V for Fast Program and Fast Erase (optional)
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M50FW080
FB300
M50FW080
PLCC32
TSOP32
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M29F016D
Abstract: No abstract text available
Text: M29F016D 16 Mbit 2Mb x8, Uniform Block 5V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical
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M29F016D
64Kbyte
TSOP40
M29F016D
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M48T129V
Abstract: M48T129Y
Text: M48T129Y M48T129V 5.0 or 3.3 V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit, battery, and crystal ■ BCD coded century, year, month, day, date, hours, minutes, and seconds
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M48T129Y
M48T129V
M48T129Y:
M48T129V:
M48T129V
M48T129Y
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Untitled
Abstract: No abstract text available
Text: M29W320DT M29W320DB 32 Mbit 4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block , 3V Supply Flash memory Feature summary Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) Access time: 70, 90ns
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M29W320DT
M29W320DB
2Mbx16,
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SOH28
Abstract: M48Z35AV
Text: M48Z35AV 5.0V or 3.3V, 256Kbit 32Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■ Automatic power-fail chip deselect and WRITE
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M48Z35AV
256Kbit
32Kbit
28-lead
PCDIP28
M48Z35AV:
SOH28
M48Z35AV
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M41ST85W
Abstract: M4T28-BR12SH1 M4T32-BR12SH1 M4T32-BR12SH6 SOH28
Text: M41ST85W 3.0/3.3V I2C combination serial RTC, NVRAM supervisor and microprocessor supervisor Features • ■ SNAPHAT SH battery & crystal Automatic battery switchover and WRITE protect for: – Internal serial RTC and – External low power SRAM (LPSRAM)
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M41ST85W
400kHz
SOH28
500nA
SOX28
10ths/100ths
M41ST85W
M4T28-BR12SH1
M4T32-BR12SH1
M4T32-BR12SH6
SOH28
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SB2100
Abstract: SB270 SB280 SB290
Text: LITE-ON SEMICONDUCTOR SB270 THRU SB2100 REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 2.0 Amperes SCHOTTKY BARRIER RECTIFIERS DO-15 FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability
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SB270
SB2100
DO-15
DO-15
300us
22-Jun-2001,
KDHD02
SB2100
SB280
SB290
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M50FW080
Abstract: PLCC32 TSOP32
Text: M50FW080 8-Mbit 1 Mb x8, Uniform Block 3-V supply, Firmware Hub Flash memory Feature summary • Supply voltage – VCC = 3 V to 3.6 V for Program, Erase and Read operations – VPP = 12 V for fast program and fast erase (optional) PLCC32 (K) ■ Two interfaces
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M50FW080
PLCC32
M50FW080
PLCC32
TSOP32
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A94A
Abstract: A94A Marking deboo CLC425 LMH6624 MDC
Text: LMH6624 Ultra Low Noise Wideband Operational Amplifier General Description Features The LMH6624 combines wide bandwidth 1.5 GBW with , 2.3pA/ ) and ultra very low input noise (0.92nV/ low dc errors (100µV VOS, ± 0.1µV/˚C drift) providing a very precise operational amplifier with wide dynamic range. This
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LMH6624
OA-30:
OA-30
Sep02
17Sep02
8-Jan-2004]
A94A
A94A Marking
deboo
CLC425
LMH6624 MDC
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A65A
Abstract: 3V10V
Text: LMH6642/6643/6644 3V, Low Power, 130MHz, 75mA Rail-to-Rail Output Amplifiers General Description The LMH664X family true single supply voltage feedback amplifiers offer high speed 130MHz , low distortion (−62dBc), and exceptionally high output current (approximately 75mA) at low cost and with reduced power consumption when compared against existing devices with similar
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Original
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LMH6642/6643/6644
130MHz,
LMH664X
130MHz)
-62dBc)
AN-1240:
2-Jul-02
9-Aug-2002]
A65A
3V10V
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STANDARD DIN 6784
Abstract: No abstract text available
Text: M48Z35AV 5.0 V or 3.3 V, 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■
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M48Z35AV
M48Z35AV:
28-lead
STANDARD DIN 6784
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Untitled
Abstract: No abstract text available
Text: M50FW080 8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory • SUPPLY VOLTAGE – VCC = 3V to 3.6V for Program, Erase and Read Operations – VPP = 12V for Fast Program and Fast Erase (optional) ■ TWO INTERFACES – Firmware Hub (FWH) Interface for embedded
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M50FW080
PLCC32
TSOP40
33MHz
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M29W320DT
Abstract: Numonyx JESD97 M29W320D M29W320DB TFBGA48
Text: M29W320DT M29W320DB 32 Mbit 4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block , 3V Supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Access time: 70, 90ns
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M29W320DT
M29W320DB
2Mbx16,
M29W320DT
Numonyx
JESD97
M29W320D
M29W320DB
TFBGA48
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PDF
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TECHNICAL SPECIFICATION DATA SHEET GOLD 705
Abstract: M41ST85W M4T28-BR12SH1 M4T32-BR12SH1 M4T32-BR12SH6 SOH28 AN934 24JAN NVRAM
Text: M41ST85W 3.0/3.3 V I2C combination serial RTC, NVRAM supervisor and microprocessor supervisor Features SNAPHAT SH battery & crystal • Automatic battery switchover and WRITE protect for: – Internal serial RTC and – External low power SRAM (LPSRAM) ■
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M41ST85W
SOH28
TECHNICAL SPECIFICATION DATA SHEET GOLD 705
M41ST85W
M4T28-BR12SH1
M4T32-BR12SH1
M4T32-BR12SH6
SOH28
AN934
24JAN
NVRAM
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PDF
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L6363
Abstract: TQFP100
Text: CD00002472 Rev 1.0 ACTIVE PAGE A PRML READ/WRITE CHANNEL Datasheet DOCUMENT HISTORY Version Rev 1.0 Release Date No history included due to Migration. See it in Edocs. Change Qualifier Migration CD00002472 Rev 1.0 ACTIVE PAGE B DOCUMENT APPROVAL Name Function
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CD00002472
L6363
TQFP100
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JESD97
Abstract: M29F016D A12A20
Text: M29F016D 16 Mbit 2Mb x8, Uniform Block 5V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical ■
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M29F016D
64Kbyte
TSOP40
JESD97
M29F016D
A12A20
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PDF
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Untitled
Abstract: No abstract text available
Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns
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Original
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M29W320DT
M29W320DB
TSOP48
TFBGA63
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PDF
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Untitled
Abstract: No abstract text available
Text: M50FW080 8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory • SUPPLY VOLTAGE – VCC = 3V to 3.6V for Program, Erase and Read Operations – VPP = 12V for Fast Program and Fast Erase (optional) ■ TWO INTERFACES – Firmware Hub (FWH) Interface for embedded
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M50FW080
PLCC32
TSOP40
33MHz
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PDF
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M48Z35AV
Abstract: SOH28
Text: M48Z35AV 5.0 V or 3.3 V, 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■ Automatic power-fail chip deselect and WRITE
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Original
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M48Z35AV
M48Z35AV:
28-lead
PCDIP28
M48Z35AV
SOH28
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PDF
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR SB270 THRU SB2100 REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 2.0 Amperes SCHOTTKY BARRIER RECTIFIERS DO-15 FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability
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Original
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SB270
SB2100
DO-15
DO-15
300us
22-Jun-2001,
KDHD02
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PDF
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PBT GF20
Abstract: PBT GF20 AMP 144969 144969-x AMP PBT GF20 PBT GF20 tyco
Text: TH I S DRAW I NG I S U N P U B L I S H E D . DI F F US I ON R E S T R E I N T E _ C O P Y R I G H T 20 BY TYCO ELECTRONICS R E L E A S E D F OR P U B L I C A T I O N L I B R E A L A DI F F U S I O N ALL RIGHTS RESERVED. CORPORATION. TOUS D R O I T S R E S E R V E S
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2929REPRESENTE
22JUN2001
25JAN2011
PBT GF20
PBT GF20 AMP
144969
144969-x
AMP PBT GF20
PBT GF20 tyco
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PDF
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1-502776-1
Abstract: No abstract text available
Text: I 7 8 TH 5 DRAWING COPYRIGHT 15 UNPUBL 5HED. 19 R EL EA 5 E D BY AMP INCORPORATED. FOR P U B L I C A T I O N ALL 6 5 ,19 R IG H T S R E S E R V E D . D D 2 5 . 4 REF [1 . 0 0 ] <L •a« C MATERI AL: BODY: THERMOPLASTI C RETENTI ON C L I P : S T A I N L E S S S T E E L
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11JUN97
22-JUN-01
arnp34874
/home/amp34874/edmmod
0UB0-0301-01
22JUN2001
2-560NC-2B
1-502776-HERWISE
22MAY2001
1-502776-1
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