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    22EDI Search Results

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    Skyworks Solutions Inc SI88622ED-IS

    DGTL ISO 5000VRMS 2CH GP 20SOIC
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    DigiKey SI88622ED-IS Tube 758 1
    • 1 $4.82
    • 10 $4.351
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    Mouser Electronics SI88622ED-IS
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    Richardson RFPD SI88622ED-IS 1
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    Skyworks Solutions Inc SI88322ED-IS

    DGTL ISO 5KV 2CH GEN PURP 20SOIC
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    DigiKey SI88322ED-IS Tray 38
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    Skyworks Solutions Inc SI88422ED-IS

    DGTL ISO 5KV 2CH GEN PURP 16SOIC
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    DigiKey SI88422ED-IS Tray 46
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    Richardson RFPD SI88422ED-IS 1
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    Skyworks Solutions Inc SI88222ED-IS

    DGTL ISO 5KV 2CH GEN PURP 16SOIC
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    DigiKey SI88222ED-IS Tray 46
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    Richardson RFPD SI88222ED-IS 1
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    Skyworks Solutions Inc SI88222ED-ISR

    DGTL ISO 5KV 2CH GEN PURP 16SOIC
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    DigiKey SI88222ED-ISR Reel 1,250
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    SI88222ED-ISR Digi-Reel 1
    • 1 $6.85
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    SI88222ED-ISR Cut Tape 1
    • 1 $6.85
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    Mouser Electronics SI88222ED-ISR
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    Richardson RFPD SI88222ED-ISR 1
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    22EDI Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EDI8C8512C35TM

    Abstract: EDI8C8512C45TM EDI8C8512C55TM
    Text: 22EDI EDI8C8512C Electronic Designs Inc. • Low Power Four Megabit SRAM Module 512Kx8 Static RAM CMOS, 0.4" Wide DIP Module Features The EDI8C8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted in a multi­ layered, multi-cavity ceramic substrate. This high speed


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    PDF 22EDI EDI8C8512C 512Kx8 EDI8C8512C 4096K 128Kx8 323D11M EDI8C8512C35TM EDI8C8512C45TM EDI8C8512C55TM

    Untitled

    Abstract: No abstract text available
    Text: 22EDI EDI8C32128C ELECTRONIC DESIGNS INC. High Performance Four Megabit SRAM 128Kx32 CMOS High Speed Static RAM Features The EDI8C32128C, a high speed, high performance, four megabit density Static RAM organized as 128Kx32 bits, contains four 128Kx8 SRAMs mounted in a package.


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    PDF 22EDI EDI8C32128C 128Kx32 EDI8C32128C, 128Kx32 128Kx8 EDI8C32128C 040x45Â

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    PDF

    TME 57

    Abstract: DQ131 45VCci a81s DQ111 A5173
    Text: m EDI9F232256BC 1 2x256Kx32 SRAM Module x ELECTRONIC DESIGNI N C. 2x256Kx32 Static RAM CMOS, High SpeedModule Features The EDI9F232256B is a high speed 16 megabit Static RAM module organized as 2x256K words by 32 bits. This module is constructed from sixteen 256Kx4 Static RAMs in SOJ


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    PDF EDI9F232256BC 2x256Kx32 EDI9F232256B 2x256K 256Kx4 2322568RW TME 57 DQ131 45VCci a81s DQ111 A5173

    EDI88130LPS25M

    Abstract: EDI88130CS-RP 18kX
    Text: m EDI88130CS-RP a E C IR O N C « S IG N S N C . 128Kx8 Static RAM CMOS, Monolithic F e a tu re s The EDI88130CS is a ruggedized plastic 128Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the


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    PDF EDI88130CS-RP I28/0r8 128Kx8 EDI88130LPS) EDI88130CS devic25MM EDI88130CS15MI EDI88130CS17WI EDI88130LPS25M EDI88130CS-RP 18kX

    Untitled

    Abstract: No abstract text available
    Text: W D EDI8F32513C Ì 512Kx32 Battery Backed ELECTRONIC DESIGNS. INC. SRAM Module ADVANCED Features 512Kx32 bit C M O S Static Random Access Memory with on-board battery backup 512Kx32 Battery Backed SRAM Module • Access Times 70 and 85ns The EDI8F32513C is a 16 megabit Battery Backed S R A M


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    PDF EDI8F32513C 512Kx32 EDI8F32513C 512Kx 512Kx8 KeeperEDI8F32513C S12Kx32 EDI8F32513C70MMC

    el 917

    Abstract: AI845 MAX-7Q 0 TME 57 A1268
    Text: W D EDI8F32513C Ì 512Kx32 Battery Backed SRAM Module ELECTRONIC DESIGNS. INC. ADVANCED Features 512 Kx32 bit C M O S Static Random A cce ss Mem ory with on-board battery backup 512Kx32 BatteryBacked SRAM Module • A c c e ss Times 70 and 85ns The E D I8 F 3 2 5 1 3 C is a 16 megabit Battery Backed S R A M


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    PDF 512Kx32 EDI8F32513C EDI8F32513C 512Kx ED18F32513C EDI8F32513C70MMC el 917 AI845 MAX-7Q 0 TME 57 A1268

    Untitled

    Abstract: No abstract text available
    Text: WSX EDI441024C afCTROMC 0E9GNSINC. 1Megx4 Fast Page DRAM 1Megabit x 4 Dynamic RAM 5V, Fast Page Features The EDI441024C is a high performance, low power CMOS Dynamic RAM organized as 1 Megabit x 4. 1 Meg x 4 bit CMOS Dynamic During READ and WRITE cycles each bit is addressed through 20


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    PDF 100ns EDI441024C EDI441024C 015B1USA* ED144W24C

    T78A

    Abstract: No abstract text available
    Text: m EDI9F232256BC 1 2x256Kx32 SRAM Module x ELECIROMC OESIGN& NC. 2x256Kx32 Static RAM CMOS, High Speed Module Features The EDI9F232256B is a high speed 16 megabit Static RAM module organized as 2x256K words by 32 bits. This module is constructed from sixteen 256Kx4 Static RAMs in SOJ


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    PDF EDI9F232256BC 2x256Kx32 EDI9F232256B 2x256K 256Kx4 EDI9F232256B/C 323D114 EDI9F232256B T78A

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


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    PDF 11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719