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    Text: E /M 4 7 F 0 1 0 1024KBit CMOS Flash EPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features • 128K Byte Rash Erasable Non-Volatile Memory ■ Input Latches for Writing and Erasing ■ Fast Byte Write: 225fjs max rn -5 5 °C to +125°C Temp Read M47F010


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    PDF 1024KBit 225fjs M47F010) E47F010) MD400084/- E/M47F010 E/M47F010 47F010