SA24C1024
Abstract: Up To Date CMOS 4000 Data Comparison Tables M08D SA24C1024E SA24C1024LZ
Text: Features •= •= •= •= •= •= •= •= •= •= •= Saifun NROM NVM Technology Operating voltage: 2.7V to 3.6V Clock frequency: 100/400/1700/3400 kHz Low power consumption 0.5µ µA standby current typical L version <0.2µ µA standby current typical (LZ version)
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SA24C1024
1024Kb
SA24C1024
Up To Date CMOS 4000 Data Comparison Tables
M08D
SA24C1024E
SA24C1024LZ
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TSP50C04
Abstract: BD 4914 MX 0541 TSP5220 TSP50C12 BA 59 04AF P DAC 0804 interfacing DAC with 0830 microprocessor LCD 16PIN mozart
Text: TSP50C0x/1x Family Speech Synthesizer Design Manual 2000 Linear Products SPSS011D IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information
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TSP50C0x/1x
SPSS011D
TSP50C04
BD 4914
MX 0541
TSP5220
TSP50C12
BA 59 04AF P
DAC 0804
interfacing DAC with 0830 microprocessor
LCD 16PIN
mozart
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high frequency buzzer
Abstract: APLUS API840N
Text: APLUS API840N 32 to 40 SEC INSTANT VOICE ROM JUNE 1999 FEATURES GENERAL DESCRIPTION * Voice length at - 8 KHz sampling is 32 seconds - 6 KHz sampling is 40 seconds * Silence compression to save memory * Eight trigger pins,TG1 to TG8 for 32 sections * SBT pin play-all or sequential play-all
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API840N
high frequency buzzer
APLUS
API840N
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28C010
Abstract: 28c010-15 1N914 CAT28C010
Text: Advanced Information CAT28C010 128K x 8 1024K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 120 ns ■ Single 5V ■ Automatic Page Write Operation: ± 10% Supply –1 to 128 Bytes in 5ms –Page Load Timer ■ Low Power CMOS Dissipation: ■ End of Write Detection:
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CAT28C010
1024K-Bit
28C010
10mmx14mm)
8mmX20mm)
500/Reel
120ns
150ns
28C010
28c010-15
1N914
CAT28C010
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AT27BV800
Abstract: AT27BV800-12JC AT27BV800-12RC AT27C800 0988B 1E1E
Text: Features • Read Access Time - 120 ns • Word-wide or Byte-wide Configurable • Dual Voltage Range Operation • • • • • • • • – Unregulated Battery Power Supply Range, 2.7V to 3.6V or Standard 5V ± 10% Supply Range 8-Megabit Flash and Mask ROM Compatable
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44-Lead
48-Lead
48-Lead,
MO-142
44-Lead,
MS-018
AT27BV800
AT27BV800-12JC
AT27BV800-12RC
AT27C800
0988B
1E1E
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AT27BV800
Abstract: AT27BV800-15JC AT27BV800-15RC AT27C800 A1865 MS-018-AC PACKAGE OUTLINE
Text: Features • Read Access Time – 150 ns • Word-wide or Byte-wide Configurable • Dual Voltage Range Operation • • • • • • • • – Unregulated Battery Power Supply Range, 2.7V to 3.6V or Standard 5V ± 10% Supply Range 8-megabit Flash and Mask ROM-compatible Pinouts
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44-lead
48-lead
0988D
05/00/xM
AT27BV800
AT27BV800-15JC
AT27BV800-15RC
AT27C800
A1865
MS-018-AC PACKAGE OUTLINE
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TK 69 TSOP
Abstract: 1024KX16 M5M4V16169RT-10 1-OF-128 7WB1 AD011 M5M4V16169TP-10
Text: MITSUBISHI LSIs TARGET SPEC REV. 2.0 M5M4V16169RT-10,-12,-15 16MCDRAM:16M(1024K-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This document is a preliminary Target Spec. and some of the contents are subject to change without notice.
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M5M4V16169RT-10
16MCDRAM
1024K-WORD
16-BIT)
1024-WORD
M5M4V16169TP
16M-bit
576-word
16-bit
TK 69 TSOP
1024KX16
1-OF-128
7WB1
AD011
M5M4V16169TP-10
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fujitsu mb90f
Abstract: upc 2851 v bnt 801 v1.1 MB90F DN-13 bnt 801 K 2232 DC-06 c914 MB90F378
Text: Corporate names revised in the documents The Fujitsu Limited reorganized its LSI business into a wholly owned subsidiary, the Fujitsu Microelectronics Limited on March 21, 2008. The corporate names “Fujitsu” and “Fujitsu Limited” described all in this document have been
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CM44-10135-1E
F2MC-16LX
16-BIT
MB90378
F2MC-16L.
F2MC-16LX
fujitsu mb90f
upc 2851 v
bnt 801 v1.1
MB90F
DN-13
bnt 801
K 2232
DC-06
c914
MB90F378
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schmitt trigger using ic 555 timer
Abstract: holtek PRODUCT LABEL
Text: HT83XXX Q-VoiceTM Technical Document • Tools Information · FAQs · Application Note Features · Operating voltage: 2.4V~5.0V · Two 8-bit programmable timer counter with 8-stage prescaler and one time base counter · Up to 1ms 0.5ms instruction cycle with 4MHz (8MHz)
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HT83XXX
14-bit
32-pin
schmitt trigger using ic 555 timer
holtek PRODUCT LABEL
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v 4836
Abstract: No abstract text available
Text: HIGH-SPEED 64K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial: 15/20ns max. – Industrial: 20ns (max.) Low-power operation
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IDT7028L
15/20ns
IDT7028L
IDT7028
eith14
200mV
v 4836
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Untitled
Abstract: No abstract text available
Text: セットアップガイド テーブルリファレンス config コマンドを使って装置のコンフィグレーションをする際にその装置向けシス テムのテーブル情報が必要になります。 本テーブルリファレンスは装置
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FNX0510,
FNX0531,
FNX0532/0532A,
FNX0550/0550A,
FNX0551/0551A
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70V28
Abstract: A15L A15R IDT70V28 IDT70V28L
Text: IDT70V28L HIGH-SPEED 3.3V 64K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 15/20ns max. – Industrial: 20ns (max.)
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IDT70V28L
15/20ns
440mW
IDT70V28
200mV
70V28
A15L
A15R
IDT70V28L
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28F010
Abstract: M28F010 M28F010-12 M28F010-90 M80C186
Text: M28F010 1024K 128K x 8 CMOS FLASH MEMORY Y Y Y Y Y Y Flash Electrical Chip-Erase 5 Second Typical Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Typical Chip-Program Single High Voltage for Writing and Erasing CMOS Low Power Consumption
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M28F010
1024K
M28F010
ER-20
ER-24
28F010
M28F010-12
M28F010-90
M80C186
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70V28
Abstract: A15L A15R IDT70V28 IDT70V28L
Text: PRELIMINARY IDT70V28L HIGH-SPEED 3.3V 64K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 15/20ns max. Low-power operation
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IDT70V28L
15/20ns
440mW
IDT70V28
70V28
A15L
A15R
IDT70V28L
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Untitled
Abstract: No abstract text available
Text: E /M 4 7 F 0 1 0 1024KBit CMOS Flash EPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features • 128K Byte Rash Erasable Non-Volatile Memory ■ Input Latches for Writing and Erasing ■ Fast Byte Write: 225fjs max rn -5 5 °C to +125°C Temp Read M47F010
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1024KBit
225fjs
M47F010)
E47F010)
MD400084/-
E/M47F010
E/M47F010
47F010
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Untitled
Abstract: No abstract text available
Text: ^ED I EDI8M1665C Electronic D«*igrtt Inc. High Speed Megabit SRAM Module 64Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8M1665C is a 1024K-bit high speed CMOS Static RAM Module consisting of four 4 64Kx4 Static RAMs in leadless chip carriers surface-mounted onto a
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EDI8M1665C
64Kx16
EDI8M1665C
1024K-bit
64Kx4
64Kx4)
64Kx16
28Kx8
256Kx4
I8M1665C
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Untitled
Abstract: No abstract text available
Text: Features • • • • • • • • • • • Read Access Time -10 0 ns Word-wide or Byte-wide Configurable 8-Megabit Flash and Mask ROM Compatable Low Power CMOS Operation - 100 ¿A Maximum Standby - 50 mA Maximum Active at 5 MHz Wide Selection of JEDEC Standard Packages
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42-Lead
44-Lead
48-Lead
1024K
MO-142
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Digital ECHO microphone mixing circuit
Abstract: analog ECHO microphone mixing circuit 7-band graphic equalizer voice changer circuits diagram voice changer mic music auto level control Karaoke Processor IC voice changer microphone 2 parts Trimmer POT 1M Simple Digital ECHO microphone mixing circuit
Text: I p NJU25102 r Digital Karaoke Audio Processor ^ Description Features The NJU25102 is a dedicated audio processor IC which supports all of the popular functions needed to implement a high performance Karaoke sound system. The NJU25102 ¡s a complete DSP-based system,
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NJU25102
NJU25102
16-bit
250Hz,
650Hz,
15kHz
DS00006A
Digital ECHO microphone mixing circuit
analog ECHO microphone mixing circuit
7-band graphic equalizer
voice changer circuits diagram
voice changer
mic music auto level control
Karaoke Processor IC
voice changer microphone 2 parts
Trimmer POT 1M
Simple Digital ECHO microphone mixing circuit
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IC1431
Abstract: i28F010
Text: INTEL CORP In te l UP/PRPHLS HOE Q • Hfl2bl75 QOfilS4b 3 ■ y I P K I lL O G ilD K l« M28F010 T4<*-Y lszr? 1024K (128K x 8) CMOS FLASH MEMORY ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface ■ Flash Electrical Chip-Erase
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Hfl2bl75
M28F010
1024K
M28F010
00aiSb3
402bl7S
IC1431
i28F010
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7009L
Abstract: IDT7009 IDT7009L PN100-1
Text: H IG H-SPEED 128K x 8 DUAL-PORT STATIC RAM PRELIMINARY IDT7009L Features * * True Dual-Ported m em ory cells w hich allow sim ultaneous reads of the sam e m em ory location High-speed access - * * * * Low -pow er operation - * Com m ercial: 15/20ns max.
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IDT7009L
15/20ns
IDT7009L
IDT7009
100-pin
PN100-1)
1024K
7009L
PN100-1
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IDT7M624
Abstract: No abstract text available
Text: 1 MEGABIT CMOS STATIC RAM MODULE IDT 7M624S FEATURES: DESCRIPTION: • High-density 1024K-bit CMOS static RAM module • Customer-configured to 64K x 16, 128K x 8 or 256K x 4 • Fast access times - Military: 35ns max. - Commercial: 25ns (max.) • Low power consumption
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1024K-bit
IDT7187
40-pin,
IDT7M656
S13-6
IDT7M624S
IDT7M624
MIL-STD-883,
1024K-Bit)
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Untitled
Abstract: No abstract text available
Text: ESI IS22C040 32 to 40 SEC INSTANT VOICE ROM FEATURES GENERAL DESCRIPTION • Voice length at - 8 KHz sampling is 32 seconds IS22C040 is ahigh-quality voice synthesizerwithacapacity of 32 to 40 seconds. A proprietary ADPCM algorithm is used. The audio message is stored in a 1024-Kbit on-chip
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IS22C040
IS22C040
1024-Kbit
VP009-1A
IS22C040X
IS22C040P
20-Pin
300-mil
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Untitled
Abstract: No abstract text available
Text: SMART 3 ADVANCED BOOT BLOCK WORD-WIDE 4-MBIT 256K X 16 , 8-MBIT (512K X 16), 16-MBIT (1024K X 16) FLASH MEMORY FAMILY 28F400B3, 28F800B3, 28F160B3 • Flexible SmartVoltage Technology — 2.7V—3.6V Program/Erase — 2.7V-3.6V Read Operation — 12V V pp Fast Production
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16-MBIT
1024K
28F400B3,
28F800B3,
28F160B3
32-KW
Mfl2bl75
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Untitled
Abstract: No abstract text available
Text: Features • • • • • • • • • • • Read Access Time -10 0 ns Word-wide or Byte-wide Configurable 8-Megabit Flash and Mask ROM Compatable Low Power CMOS Operation - 100 |xA Maximum Standby - 50 mA Maximum Active at 5 MHz Wide Selection of JEDEC Standard Packages
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42-Lead
44-Lead
48-Lead
AT27C800
608-bit
onlyT27C800-15PI
AT27C800-15RI
AT27C800-15TI
42DW6
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