xr2230cp

Abstract: xr 2230 XR-2230 EXAR Monolithic Function generator
Contextual Info: XR-2230 V T EX A R Pulse-Width Modulator Control System GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM The XR-2230 is a high-performance monolithic pulse width modulator control system. It contains all the nec­ essary control blocks for designing switch mode power

Faulhaber 2230

Abstract: s 2230 power 22E din 867 Faulhaber 2230 MOTOR faulhaber series 38/3 S2230 Gearheads
Contextual Info: DC-Micromotors 2,5 mNm Precious Metal Commutation For combination with Gearheads: 20/1, 22E, 22/2, 22/5, 22/6, 23/1, 38/3 Encoders: 5500, 5540 Series 2230 . S 2230 T UN R P2 max. η max. 003 S 3 0,6 3,69 83 006 S 6 3,0 2,94 82 012 S 12 10,8 3,27 83 015 S

EEPROM 2864

Abstract: EPROM 27020 EEPROM 28256 27E020 EEPROM 2864 INTEL 28pC64 28c64 EPROM 27256 27C040Q intel 27512 eprom eeprom 27C040
Contextual Info: ROM Emulator for USB EeRom-8U User’s Guide EE Tools, Inc. 4620 Fortran Dr. #102 San Jose, CA 95134 www.eetools.com support@eetools.com Tel: 408 263-2221 Fax: (408) 263-2230 EeRom-8U User’s Guide Copyright 1992-2010 by E. E. Tools, Inc. All rights reserved. No part of this publication may be

k 2057

Abstract: K1766 K2236 K1767 K1406 K1574 K1879 K 2149 K 2237 2SK1407
Contextual Info: P o w e r M O S F E T jr-M O S I I I '5 R ds (O N ) M aximum Rating Application Batest M O T O R Drive UPS A C 1 15V Input Switching Power Supply Type No. O * O • O O O O O O O O O O O O O O 2S K 2146 2S K 2230 2S K 2235 2S K 1766 2S K 1406 2SK1S54 2SK1805

2SD1838

Abstract: relay 5v 30a
Contextual Info: Ordering number:EN2230B NPN Triple Diffused Planar Silicon Darlington Transistor 2SD1838 Driver Applications Applications Package Dimensions • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . unit:mm 2041A [2SD1838]

2230 motor

Abstract: 3525 3045 capacitors 3530
Contextual Info: Electrolytic Capacitors Snap-in, ultra miniature, 85˚C / 105˚C NEW Series Useful life Features 157 PUM-SI 159 PUL-SI 198 PHR-SI Power Ultra Miniature Snap-In Power Ultra Long life Snap-In Power High Ripple current Snap-In 2500 h/85°C 5000 h/105°C 15 000 h/85°C

Contextual Info: Snap-in, ultra miniature, 85 °C/105 °C Product information 157 PUM-SI 159 PUL-SI 198 PHR-SI Useful life 5000 h/85 °C 5000 h/105 °C 15 000 h/85 °C Temp. range –25°C to +85 °C –25 °C to +105 °C –25°C to +85 °C Tolerance ±20% ±20% ±20% CR µF

4116 Dram

Abstract: 32T200
Contextual Info: MOTOROLA SEMICONDUCTOR -TECHNICAL DATA MCM32230 MCM32T200 2M x 32 Bit Dynamic Random Access Memory Module The MCM32230 is a 64M dynamic random access memory DRAM module organized as 2,097,152 x 32 bits. The module is a 72-lead double sided single­

capacitor 0805 avx

Abstract: 08055C103KATDA J940 08053G105ZATEA Bipolar NPN Transistor sot23 MRF21010
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF21010 N–Channel Enhancement–Mode Lateral MOSFET 2170 MHz, 10 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for W–CDMA base station applications at frequencies from 2110 to

M1G074-BF

Abstract: R1G225-AF11-52 r1g225 UL1004 M1G074BF soft start motor
Contextual Info: EC centrifugal fan R1G225-AF11-52 backward curved, single inlet ebm-papst Mulfingen GmbH & Co. KG Bachmühle 2 74673 Mulfingen Phone: +49 7938 81-0 Fax: +49 7938 81-110 www.ebmpapst.com info1@de.ebmpapst.com Nominal data Type R1G225-AF11-52 Motor M1G074-BF

100B0R5BW

Abstract: 100B102JW Transistor J438 100B5R6BW MRF21010
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Transistor J438

Abstract: MRF21010 100B102JW
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

capacitor 0805 avx

Abstract: MRF21010 08055C103KATDA 3224W C-XM-99-001-01 08051J2R2BBT 293D106X9035D Bipolar NPN Transistor sot23
Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF21010 N–Channel Enhancement–Mode Lateral MOSFET 2170 MHz, 10 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for W–CDMA base station applications at frequencies from 2110 to

MRF21010

Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.

MRF21010

Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

MRF21010

Abstract: 100B102JW 293D106X9035D2T MRF21010S NI-360
Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

j438

Abstract: MRF21010
Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.

MRF21010

Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110

MRF21010R1

Abstract: 567 tone MRF21010 MRF21010LSR1 100B102JW
Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

MRF21010

Abstract: MRF21010SR1 sot-23 macom MRF21010R1 100B5R6B
Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

capacitor 2200 micro M

Abstract: MRF21010LR1 MRF21010LSR1 08053G105ZATEA MRF21010
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Freescale Semiconductor, Inc.

hatching machine

Abstract: A113 100B8R2CW MW4IC2230 MW4IC2230GMBR1 MW4IC2230MBR1 TAJD106K035
Contextual Info: MOTOROLA Order this document by MW4IC2230/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W–CDMA base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts

Contextual Info: ISOLATORS General Information Equivalent Discrete Semiconductors The MOC2A40 and MOC2A6O Series are the first members of the POWER OPTO Isolator family from Motorola. The MOC2A40/MOC2A60 are 2 Amp @ 40°C/Zero-Crossing/Optlcally Coupled Triacs. These isolated AC output devices are ruggedized to survive the harsh operating environments inherent in Industrial Controller applications. Additionally, their thermally opti­

Contextual Info: MOTOROLA Order this document by MW4IC2230/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts