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Kyocera AVX Components 100B8R2CW500XT1K CAP CER 8.2PF 500V P90 1111
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DigiKey	100B8R2CW500XT1K	Reel			1,000	1 - 10 - 100 - 1000 $3.22699 10000 $3.22699	Buy Now
Avnet Americas	100B8R2CW500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
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Richardson RFPD	100B8R2CW500XT1K				1,000	1 - 10 - 100 - 1000 $2.41 10000 $2.1	Buy Now
Kyocera AVX Components 100B8R2CW500XT CAP 8.2PF PC 500V .25% - Custom Tape W/Leader (Alt: 100B8R2CW500XT)
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Avnet Americas	100B8R2CW500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
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Richardson RFPD	100B8R2CW500XT				500	1 - 10 - 100 - 1000 $2.41 10000 $2.1	Buy Now
Avnet Asia	100B8R2CW500XT			18 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Kyocera AVX Components 100B8R2CWN500XC100 MLC A/B/R - Waffle Pack (Alt: 100B8R2CWN500XC100)
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Avnet Americas	100B8R2CWN500XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B8R2CWN500XC100					1 $6.29 10 $5.42 100 $4.2 1000 $3.6 10000 $3.6	Get Quote
Kyocera AVX Components 100B8R2CWN500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B8R2CWN500XT)
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Avnet Americas	100B8R2CWN500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B8R2CWN500XT					1 - 10 - 100 - 1000 $2.93 10000 $2.87	Get Quote
Kyocera AVX Components 100B8R2CWN500XT1K MLC A/B/R - Custom Tape W/Leader (Alt: 100B8R2CWN500XT1K)
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Avnet Americas	100B8R2CWN500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B8R2CWN500XT1K					1 - 10 - 100 - 1000 $2.64 10000 $2.64	Get Quote

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100B8R2CW Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
100B8R2CW	Freescale Semiconductor	RF LDMOS Wideband Integrated Power Amplifiers	Original	PDF
100B8R2CW500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 8.2PF 500V P90 1111	Original	PDF
100B8R2CW500XT1K	American Technical Ceramics	Ceramic Capacitor 8.2PF 500V P90 1111	Original	PDF

100B8R2CW Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
J294 Abstract: 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HS Text: Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 0, 10/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19170HR3 MRF7S19170HSR3 Designed for CDMA base station applications with frequencies from 1930 to	Original	MRF7S19170H MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HR3 DataMRF7S19170H J294 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HSR3 MRF7S19170HS	PDF
ipc 9850 Abstract: J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1 MW6IC2240N MW6IC2240NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 1, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on -chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage	Original	MW6IC2240N MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 ipc 9850 J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRF5S9101 MRF5S9101NR1/NBR1. MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MR1	PDF
Untitled Abstract: No abstract text available Text: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1	PDF
MW4IC2230NB Abstract: j631 marking j130 J242 Text: Freescale Semiconductor Technical Data Document Number: MW4IC2230 Rev. 4, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts	Original	MW4IC2230 MW4IC2230NBR1 MW4IC2230GNBR1 MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230 MW4IC2230NB j631 marking j130 J242	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 2, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage	Original	MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 MW6IC2240N	PDF
ATC capacitor 100b Abstract: MRF9130LR3 MRF9130L MRF9130LSR3 irl130 Text: MOTOROLA Order this document by MRF9130L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9130L MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	MRF9130L/D MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130L MRF9130LR3 ATC capacitor 100b MRF9130LSR3 irl130	PDF
hatching machine Abstract: 100B8R2CW A113 AN1987 MW4IC2230 MW4IC2230GMBR1 MW4IC2230MBR1 TAJD106K035 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC2230/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base	Original	MW4IC2230/D MW4IC2230 MW4IC2230MBR1 MW4IC2230GMBR1 hatching machine 100B8R2CW A113 AN1987 MW4IC2230GMBR1 TAJD106K035	PDF
marking Z4 Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9101 MRF5S9101MBR1 MRF5S9101MR1 MRF5S9101NBR1 Text: Freescale Semiconductor Technical Data Document Number: MRF5S9101 Rev. 2, 7/2005 RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 marking Z4 A114 A115 AN1955 C101 JESD22 MRF5S9101 MRF5S9101MBR1	PDF
AN1955 Abstract: 100B8R2CW A113 AN1977 AN1987 MW4IC2230GNBR1 MW4IC2230NBR1 TAJD106K035 Text: Freescale Semiconductor Technical Data Document Number: MW4IC2230N Rev. 6, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230N wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28	Original	MW4IC2230N MW4IC2230N MW4IC2230NBR1 MW4IC2230GNBR1 AN1955 100B8R2CW A113 AN1977 AN1987 MW4IC2230GNBR1 TAJD106K035	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MW4IC2230N Rev. 6, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230N wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescales newest High Voltage 26 to 28	Original	MW4IC2230N MW4IC2230N MW4IC2230NBR1 MW4IC2230GNBR1	PDF
TO272* APPLICATION Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MW4IC2230 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W−CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts	Original	MW4IC2230 MW4IC2230NBR1 MW4IC2230GNBR1 MW4IC2230MBR1 MW4IC2230GMBR1 TO272* APPLICATION	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9130L Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance	Original	MRF9130L MRF9130LR3 MRF9130LSR3	PDF
TO272 Abstract: AN-587 motorola MW4IC2230MBR1 Text: MOTOROLA Order this document by MW4IC2230/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W–CDMA base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts	Original	MW4IC2230/D MW4IC2230 MW4IC2230MBR1 MW4IC2230GMBR1 TO272 AN-587 motorola	PDF

Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF5S9101/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF5S9101NR1 RF Power Field Effect Transistors MRF5S9101NBR1 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101MR1 Designed for GSM and GSM EDGE base station applications with	Original	MRF5S9101/D MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MBR1	PDF
MRF9130L Abstract: MRF9130LR3 MRF9130LSR3 Text: MOTOROLA Order this document by MRF9130L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9130L MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies	Original	MRF9130L/D MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130L MRF9130LR3 MRF9130LSR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9130L Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance	Original	MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130LR3	PDF
J5001 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 3, 11/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage	Original	MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 MW6IC2240N J5001	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9130L Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance	Original	MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130LR3	PDF
J4-89 Abstract: J534 Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 0, 9/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage	Original	MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 J4-89 J534	PDF
1329a Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MW4IC2230 Rev. 4, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts	Original	MW4IC2230 MW4IC2230NBR1 MW4IC2230GNBR1 MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230 1329a	PDF
capacitor 2220 Abstract: 200B A113 AN1955 MRF5S9101MBR1 MRF5S9101MR1 MRF5S9101NBR1 MRF5S9101NR1 murata 897 Mhz Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S9101/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. MRF5S9101NR1 RF Power Field Effect Transistors MRF5S9101NBR1 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101MR1	Original	MRF5S9101/D MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 capacitor 2220 200B A113 AN1955 MRF5S9101MBR1 murata 897 Mhz	PDF
Rogers 4350B Abstract: TG2H214120 4G base station power amplifier ECG Cross Reference TG2H214120-FS TG2H214120-FL capacitor 220uF, 50V,NICHICON ECJ-3YB1E106M TG2H214 IC-550 Text: TG2H214120 2140MHz 120W WCDMA Power Amplifier Applications • • • High power and high linearity applications Wireless Base Station Amplifiers Tower-mounted amplifiers Product Features • • • • • • • • • Functional Block Diagram Optimized for 2110 – 2170 MHz operation	Original	TG2H214120 2140MHz TG2H214120 Rogers 4350B 4G base station power amplifier ECG Cross Reference TG2H214120-FS TG2H214120-FL capacitor 220uF, 50V,NICHICON ECJ-3YB1E106M TG2H214 IC-550	PDF
"RF power MOSFETs" Abstract: marking Z4 MRF9130LR3 MRF9130L MRF9130LSR3 chip resistor 1206 Text: Freescale Semiconductor Technical Data Document Number: MRF9130L Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance	Original	MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130LR3 "RF power MOSFETs" marking Z4 MRF9130L MRF9130LSR3 chip resistor 1206	PDF

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Kyocera AVX Components 100B8R2CW500XT1K

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100B8R2CW Datasheets (3)

100B8R2CW Datasheets Context Search

J294

ipc 9850

Untitled

Untitled

MW4IC2230NB

Untitled

ATC capacitor 100b

hatching machine

marking Z4

AN1955

Untitled

TO272* APPLICATION

Untitled

TO272

Untitled

MRF9130L

Untitled

J5001

Untitled

J4-89

1329a

capacitor 2220

Rogers 4350B

"RF power MOSFETs"