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    Kyocera AVX Components 100B8R2CW500XT1K

    CAP CER 8.2PF 500V P90 1111
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    Kyocera AVX Components 100B8R2CW500XC100

    Silicon RF Capacitors / Thin Film 500V 8.2pF Tol 0.25pF Las Mkg
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    Silicon RF Capacitors / Thin Film 500V 8.2pF Tol 0.25pF Las Mkg
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    Kyocera AVX Components 100B8R2CWN500XC100

    Silicon RF Capacitors / Thin Film 500V 8.2pF Tol 0.25pF Las Mkg
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    Kyocera AVX Components 100B8R2CW500XT

    Silicon RF Capacitors / Thin Film 500volts 8.2pF
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    100B8R2CW Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    100B8R2CW Freescale Semiconductor RF LDMOS Wideband Integrated Power Amplifiers Original PDF
    100B8R2CW500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 8.2PF 500V P90 1111 Original PDF
    100B8R2CW500XT1K American Technical Ceramics Ceramic Capacitor 8.2PF 500V P90 1111 Original PDF

    100B8R2CW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J294

    Abstract: 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HS
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 0, 10/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19170HR3 MRF7S19170HSR3 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF7S19170H MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HR3 DataMRF7S19170H J294 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HSR3 MRF7S19170HS

    ipc 9850

    Abstract: J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1 MW6IC2240N MW6IC2240NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 1, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on -chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		PDF MW6IC2240N MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 ipc 9850 J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF5S9101 MRF5S9101NR1/NBR1. MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MR1

    Untitled

    Abstract: No abstract text available
    Text: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1

    MW4IC2230NB

    Abstract: j631 marking j130 J242
    Text: Freescale Semiconductor Technical Data Document Number: MW4IC2230 Rev. 4, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts


    Original     		PDF MW4IC2230 MW4IC2230NBR1 MW4IC2230GNBR1 MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230 MW4IC2230NB j631 marking j130 J242

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 2, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		PDF MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 MW6IC2240N

    ATC capacitor 100b

    Abstract: MRF9130LR3 MRF9130L MRF9130LSR3 irl130
    Text: MOTOROLA Order this document by MRF9130L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9130L MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF9130L/D MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130L MRF9130LR3 ATC capacitor 100b MRF9130LSR3 irl130

    hatching machine

    Abstract: 100B8R2CW A113 AN1987 MW4IC2230 MW4IC2230GMBR1 MW4IC2230MBR1 TAJD106K035
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC2230/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base


    Original     		PDF MW4IC2230/D MW4IC2230 MW4IC2230MBR1 MW4IC2230GMBR1 hatching machine 100B8R2CW A113 AN1987 MW4IC2230GMBR1 TAJD106K035

    marking Z4

    Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9101 MRF5S9101MBR1 MRF5S9101MR1 MRF5S9101NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9101 Rev. 2, 7/2005 RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 marking Z4 A114 A115 AN1955 C101 JESD22 MRF5S9101 MRF5S9101MBR1

    AN1955

    Abstract: 100B8R2CW A113 AN1977 AN1987 MW4IC2230GNBR1 MW4IC2230NBR1 TAJD106K035
    Text: Freescale Semiconductor Technical Data Document Number: MW4IC2230N Rev. 6, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230N wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28


    Original     		PDF MW4IC2230N MW4IC2230N MW4IC2230NBR1 MW4IC2230GNBR1 AN1955 100B8R2CW A113 AN1977 AN1987 MW4IC2230GNBR1 TAJD106K035

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW4IC2230N Rev. 6, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230N wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28


    Original     		PDF MW4IC2230N MW4IC2230N MW4IC2230NBR1 MW4IC2230GNBR1

    TO272* APPLICATION

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MW4IC2230 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W−CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts


    Original     		PDF MW4IC2230 MW4IC2230NBR1 MW4IC2230GNBR1 MW4IC2230MBR1 MW4IC2230GMBR1 TO272* APPLICATION

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9130L Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance


    Original     		PDF MRF9130L MRF9130LR3 MRF9130LSR3

    TO272

    Abstract: AN-587 motorola MW4IC2230MBR1
    Text: MOTOROLA Order this document by MW4IC2230/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W–CDMA base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts


    Original     		PDF MW4IC2230/D MW4IC2230 MW4IC2230MBR1 MW4IC2230GMBR1 TO272 AN-587 motorola

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S9101/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF5S9101NR1 RF Power Field Effect Transistors MRF5S9101NBR1 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101MR1 Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF5S9101/D MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MBR1

    MRF9130L

    Abstract: MRF9130LR3 MRF9130LSR3
    Text: MOTOROLA Order this document by MRF9130L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9130L MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies


    Original     		PDF MRF9130L/D MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130L MRF9130LR3 MRF9130LSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9130L Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance


    Original     		PDF MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130LR3

    J5001

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 3, 11/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		PDF MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 MW6IC2240N J5001

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9130L Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance


    Original     		PDF MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130LR3

    J4-89

    Abstract: J534
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 0, 9/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		PDF MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 J4-89 J534

    1329a

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW4IC2230 Rev. 4, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts


    Original     		PDF MW4IC2230 MW4IC2230NBR1 MW4IC2230GNBR1 MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230 1329a

    capacitor 2220

    Abstract: 200B A113 AN1955 MRF5S9101MBR1 MRF5S9101MR1 MRF5S9101NBR1 MRF5S9101NR1 murata 897 Mhz
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S9101/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. MRF5S9101NR1 RF Power Field Effect Transistors MRF5S9101NBR1 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101MR1


    Original     		PDF MRF5S9101/D MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 capacitor 2220 200B A113 AN1955 MRF5S9101MBR1 murata 897 Mhz

    Rogers 4350B

    Abstract: TG2H214120 4G base station power amplifier ECG Cross Reference TG2H214120-FS TG2H214120-FL capacitor 220uF, 50V,NICHICON ECJ-3YB1E106M TG2H214 IC-550
    Text: TG2H214120 2140MHz 120W WCDMA Power Amplifier Applications • • • High power and high linearity applications Wireless Base Station Amplifiers Tower-mounted amplifiers Product Features • • • • • • • • • Functional Block Diagram Optimized for 2110 – 2170 MHz operation


    Original     		PDF TG2H214120 2140MHz TG2H214120 Rogers 4350B 4G base station power amplifier ECG Cross Reference TG2H214120-FS TG2H214120-FL capacitor 220uF, 50V,NICHICON ECJ-3YB1E106M TG2H214 IC-550

    "RF power MOSFETs"

    Abstract: marking Z4 MRF9130LR3 MRF9130L MRF9130LSR3 chip resistor 1206
    Text: Freescale Semiconductor Technical Data Document Number: MRF9130L Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance


    Original     		PDF MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130LR3 "RF power MOSFETs" marking Z4 MRF9130L MRF9130LSR3 chip resistor 1206