Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    220QBK Search Results

    SF Impression Pixel

    220QBK Price and Stock

    Wima SMDIC03220QB00KP00

    Film Capacitors SMD-PPS 0.22 uF 63 VDC 5.7x5.1x4.5 SC2220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SMDIC03220QB00KP00
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.884
    		Get Quote

    Wima SMDID03220QB00KQ00

    Film Capacitors SMD-PPS 0.22 uF 100 VDC 5.7x5.1x4.5 SC2220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SMDID03220QB00KQ00
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.884
    		Get Quote

    Wima SMDIC03220QB00KQ00

    Film Capacitors SMD-PPS 0.22 uF 63 VDC 5.7x5.1x4.5 SC2220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SMDIC03220QB00KQ00
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.884
    		Get Quote

    Wima SMDIC03220QB00KS00

    Film Capacitors SMD-PPS 0.22 uF 63 VDC 5.7x5.1x4.5 SC2220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SMDIC03220QB00KS00
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.826
    		Get Quote

    220QBK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    500 watts amplifier schematic diagram

    Abstract: OZ 960 OZ 960 S G200
    Text: PTF 10139 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 860-960 MHz. This 60–watt device operates at 55% efficiency with 12.5 dB typical gain. Nitride surface passivation and full


    Original     		PDF P4525-ND P5182-ND 220ohm, 220qbk-no 1-877-GOLDMOS 1522-PTF 500 watts amplifier schematic diagram OZ 960 OZ 960 S G200

    500 watts amplifier schematic diagram

    Abstract: NGT 03 G200
    Text: PTF 10139 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 860-960 MHz. This 60–watt device operates at 55% efficiency with 12.5 dB typical gain. Nitride surface passivation and full


    Original     		PDF 70pacitor, P5182-ND 220ohm, 220qbk-no 1-877-GOLDMOS 1522-PTF 500 watts amplifier schematic diagram NGT 03 G200

    DRM045

    Abstract: schematics of DVD player circuit board dvd player schematic CKN9009-ND mp3 player SCHEMATIC Q12N3904 2N3904 ND dvd player microcontroller Q12N3904 Datasheet MC68HC908QT2
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. Using the ASB520 MC68HC908QT2 Based Infrared Remote Control Reference PC Board Designer Reference Manual M68HC08 Microcontrollers DRM045/D Rev. 0 9/2003 MOTOROLA.COM/SEMICONDUCTORS For More Information On This Product,


    Original     		PDF ASB520 MC68HC908QT2 M68HC08 DRM045/D ASB520 MC68HC908QT2 DRM045 schematics of DVD player circuit board dvd player schematic CKN9009-ND mp3 player SCHEMATIC Q12N3904 2N3904 ND dvd player microcontroller Q12N3904 Datasheet

    infineon 018

    Abstract: No abstract text available
    Text: PTF180101 LDMOS RF Power Field Effect Transistor 10 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization


    Original     		PDF PTF180101 PTF180101 infineon 018

    nec 78m05

    Abstract: k941 78m05 nec MAX232CPE application sheet EVQ-QS205K 1N4001DICT-ND LT1130-ND LM555 function table transistor 2N4401 MAX232cpe pin diagram
    Text: User’s Manual MUB-K0-K0S LCD Multi-Use Board for K0 and K0S Microcontrollers Document no. 50850-1 1998 NEC Electronics Inc. All rights reserved. Printed in U.S.A. Date Version October 1998 2 Comments No part of this document may be copied or reproduced in any form or by any means without the prior written


    Original     		PDF PD78F9418 ND-K941 nec 78m05 k941 78m05 nec MAX232CPE application sheet EVQ-QS205K 1N4001DICT-ND LT1130-ND LM555 function table transistor 2N4401 MAX232cpe pin diagram

    OZ 960 S

    Abstract: G200 resistor 220 ohm 20222
    Text: PTF 102027 GOLDMOS Field Effect Transistor 40 Watts, 925–960 MHz Description The PTF 102027 is a 40–watt GOLDMOS FET intended for EDGE applications from 925 to 960 MHz. This device operates at 53% efficiency with 15 dB of gain typical. Full gold metallization ensures


    Original     		PDF P5182-ND 220QBK-ND 1-877-GOLDMOS 1522-PTF OZ 960 S G200 resistor 220 ohm 20222

    G200

    Abstract: No abstract text available
    Text: PTF 10193 12 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10193 is an internally matched, 12–watt GOLDMOS FET intended for GSM, CDMA and TDMA amplifier applications from 860 to 960 MHz. This device operates at 60% efficiency with 18 dB typical


    Original     		PDF P4525-ND P5182-ND 220QBK-ND 1-877-GOLDMOS G200

    sma connector panel

    Abstract: 102002 PA10 2160 transistor
    Text: PRELIMINARY PTF 102002* GOLDMOS Field Effect Transistor 90 Watts, 2110-2170 MHz Description • • Typical WCDMA Perfomance @ 2170 MHz - 3GPP 3.2, 3 DPCH, CCDF 9.5:1 dB @ .01% Peak/Avg Ratio - Output Power = 11.5 Watts - Efficiency = 14% - Adjacent Channel Power =


    Original     		PDF 2012-F2N75 220QBK-ND 1-877-GOLDMOS 1522-PTF sma connector panel 102002 PA10 2160 transistor

    p03 transistor

    Abstract: resistor 220 ohm PTF180101S H-32259-2 220QBK
    Text: PTF180101S LDMOS RF Power Field Effect Transistor 10 W, 1805 – 1880 MHz, 1930 – 1990 MHz 10 W, 2110 – 2170 MHz Description The PTF180101S is a 10-watt, internally-matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF180101S PTF180101S 10-watt, H-32259-2 p03 transistor resistor 220 ohm H-32259-2 220QBK

    Untitled

    Abstract: No abstract text available
    Text: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold


    Original     		PDF PCS6106-ND 220QBK-ND 1-877-GOLDMOS 1522-PTF

    cgs resistor

    Abstract: microstrip OZ 960 G200 20222
    Text: PTF 102027 40 Watts, 925–960 MHz GOLDMOS Field Effect Transistor Description The PTF 102027 is a 40–watt GOLDMOS FET intended for EDGE applications from 925 to 960 MHz. This device operates at 53% efficiency with 15 dB of gain typical. Full gold metallization ensures


    Original     		PDF 220QBK-ND 1-877-GOLDMOS 1522-PTF cgs resistor microstrip OZ 960 G200 20222

    capacitor 100uF 50V

    Abstract: Ericsson Microelectronics ericsson gsm c 879 transistor G200 100B4R3
    Text: PTF 10195 125 Watts, 869–894 MHz GOLDMOS Field Effect Transistor Description • • The 10195 is an internally matched 125–watt GOLDMOS FET intended for cellular, GSM, D-AMPS, CDMA and EDGE applications. This device operates at 53% efficiency with 13 dB of gain minimum. Full gold


    Original     		PDF 20yP4525-ND 100uF Digi-KeyP5182-ND 1301-RPM 22AWG, 220ohm 220QBK-ND 1-877-GOLDMOS 1522-PTF capacitor 100uF 50V Ericsson Microelectronics ericsson gsm c 879 transistor G200 100B4R3

    G200

    Abstract: No abstract text available
    Text: PTF 10193 12 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10193 is an internally matched, 12–watt GOLDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. This device operates at 60% efficiency with 18 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.


    Original     		PDF P4525-ND P5182-ND 220QBK-ND 1-77-GOLDMOS G200

    JMC5701

    Abstract: Y 335
    Text: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold


    Original     		PDF PCS6106-ND 220QBK-ND 1-877-GOLDMOS 1522-PTF JMC5701 Y 335

    resistor 220 ohm

    Abstract: PTF180101S P4525-ND 349 2110 marking us capacitor pf l1 PTF180101
    Text: PTF180101 LDMOS RF Power Field Effect Transistor 10 W, 1805–1880 MHz, 1930–1990 MHz 10 W, 2110–2170 MHz Description Features The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization


    Original     		PDF PTF180101 PTF180101 resistor 220 ohm PTF180101S P4525-ND 349 2110 marking us capacitor pf l1

    LM7805 smd

    Abstract: TRANSISTOR SMD 2X K lm7805 specification transistor smd marking ND BCP56 LM7805 PTF080101S MARKING SMD transistor R11
    Text: PTF080101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 – 960 MHz Description The PTF080101S is a 10-watt, internally-matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Thermally-enhanced packaging provides the coolest operation possible.


    Original     		PDF PTF080101S PTF080101S 10-watt, LM7805 smd TRANSISTOR SMD 2X K lm7805 specification transistor smd marking ND BCP56 LM7805 MARKING SMD transistor R11

    JMC5701

    Abstract: 466W capacitor 30 pf
    Text: PTF 10053 12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold


    Original     		PDF P4525-ND PCS6106-ND 220QBK-ND 1-877-GOLDMOS 1522-PTF JMC5701 466W capacitor 30 pf

    capacitor 0.1uf DIGIKEY

    Abstract: 2160 transistor sma connector panel capacitor siemens 4700 35 Ericsson 3GPP
    Text: PRELIMINARY PTF 102002* GOLDMOS Field Effect Transistor 90 Watts, 2110-2170 MHz Description • • Typical WCDMA Perfomance @ 2170 MHz - 3GPP 3.2, 3 DPCH, CCDF 9.5:1 dB @ .01% Peak/Avg Ratio - Output Power = 11.5 Watts - Efficiency = 14% - Adjacent Channel Power =


    Original     		PDF 2012-F2N75 220QBK-ND 1-877-GOLDMOS 1522-PTF capacitor 0.1uf DIGIKEY 2160 transistor sma connector panel capacitor siemens 4700 35 Ericsson 3GPP

    capicitor

    Abstract: smd transistor 513 500 watts amplifier schematic diagram transistor SMD LOA G200 PCC103BNCT-ND smd L19
    Text: PTF 10161 165 Watts, 869–894 MHz GOLDMOS Field Effect Transistor Description The PTF 10161 is an internally matched,165 watt GOLDMOS FET intended for large signal amplifier applications from 869 to 894 MHz. It typically operates with 50% efficiency and 16 db of gain. Nitride


    Original     		PDF 220QBK-ND 1-877-GOLDMOS 1522-PTF capicitor smd transistor 513 500 watts amplifier schematic diagram transistor SMD LOA G200 PCC103BNCT-ND smd L19

    G200

    Abstract: 100-b 502 10019
    Text: PTF 10019 70 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description • • The PTF 10019 is an internally matched, 70–watt GOLDMOS FET intended for cellular, GSM and D-AMPS applications from 860 to 960 MHz. This device operates at 50% efficiency with 14.5 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.


    Original     		PDF 1-877-GOLDMOS 1522-PTF G200 100-b 502 10019

    1000 watts power amp circuit diagram

    Abstract: 2160 transistor
    Text: PRELIMINARY GOLDMOS Field Effect Transistor 90 Watts, 2110-2170 MHz PTF 102002* Description Key Features The PTF 102002 is an internally matched 90–watt GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This LDMOS device typically operates at 40% efficiency at P-1dB with a


    Original     		PDF 2012-F2N75 220QBK-ND 1-877-GOLDMOS 1522-PTF 1000 watts power amp circuit diagram 2160 transistor

    G200

    Abstract: 894 transistor 5r1 resistor
    Text: PTF 10195 125 Watts, 869–894 MHz GOLDMOS Field Effect Transistor Description • • The 10195 is an internally matched 125–watt GOLDMOS FET intended for cellular, GSM, D-AMPS, CDMA and EDGE applications. This device operates at 53% efficiency with 13 dB of gain minimum. Full gold


    Original     		PDF P5182-ND3 P4525-ND 220QBK-ND 1-877-GOLDMOS 1522-PTF G200 894 transistor 5r1 resistor

    ov6620 omnivision EVALUATION BOARD

    Abstract: 100 fps camera schematic OmniVision CMOS Camera omnivision cmos OV6620 cmucam 2 cmucam code camera interfacing with microcontroller omnivision EVALUATION BOARD WM2200-ND
    Text: CMUcam Vision Board User Manual Contents Introduction ………………………………………………………. 3 Hardware Board Layout ……………………………………………. 4 Assembled View …………………………………………. 5


    Original     		PDF P4923-ND P5138-ND AE8914-ND ED3308-ND ED3316-ND 929647-09-36-ND WM2700-ND WM2200-ND WM4000-ND AFS09G-ND ov6620 omnivision EVALUATION BOARD 100 fps camera schematic OmniVision CMOS Camera omnivision cmos OV6620 cmucam 2 cmucam code camera interfacing with microcontroller omnivision EVALUATION BOARD WM2200-ND