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    Infineon Technologies AG PTF180101S V1

    RF MOSFET LDMOS 28V H-32259-2
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    PTF180101S Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PTF180101S Infineon Technologies LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz Original PDF
    PTF180101S V1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 65V 1.99GHZ H-32259-2 Original PDF
    PTF180101SV1 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 10W H-32259-2 Original PDF

    PTF180101S Datasheets Context Search

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    p03 transistor

    Abstract: resistor 220 ohm PTF180101S H-32259-2 220QBK
    Text: PTF180101S LDMOS RF Power Field Effect Transistor 10 W, 1805 – 1880 MHz, 1930 – 1990 MHz 10 W, 2110 – 2170 MHz Description The PTF180101S is a 10-watt, internally-matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF180101S PTF180101S 10-watt, H-32259-2 p03 transistor resistor 220 ohm H-32259-2 220QBK

    PTF180101S

    Abstract: No abstract text available
    Text: Product Brief PTF180101S GSM/EDGE/WCDMA RF Power FET The PTF180101S Performance A multi-purpose driver, the PTF180101S is suitable for GSM/EDGE, CDMA2000 and WCDMA applications. The PTF180101S operates well in the DCS, PCS or UMTS bands. This device operates at 50% efficiency


    Original     		PDF PTF180101S PTF180101S CDMA2000 B134-H8298-X-0-7600

    PG-DSO-20

    Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
    Text: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test


    Original     		PDF PG-DSO-20 PG-RFP-10 H-34265-8 H-33265-8 H-30248-2 H-36248-2 H-33288-2 H-31248-2 H-37248-2 H-34288-2 PG-DSO-20 a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M

    infineon 018

    Abstract: No abstract text available
    Text: PTF180101 LDMOS RF Power Field Effect Transistor 10 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization


    Original     		PDF PTF180101 PTF180101 infineon 018

    PTF180101S

    Abstract: PTF180901E PTF180901F
    Text: Product Brief PTF180901 GSM/EDGE RF Power FET The PTF180901 Performance One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901 is optimized for the DCS and PCS bands. This device operates at 47% efficiency with 13.5 dB of gain and produces 115 W, P -1dB . This high-gain


    Original     		PDF PTF180901 GSM/EDGE/CDMA2000 B134-H8296-X-0-7600 PTF180101S PTF180901E PTF180901F

    resistor 220 ohm

    Abstract: PTF180101S P4525-ND 349 2110 marking us capacitor pf l1 PTF180101
    Text: PTF180101 LDMOS RF Power Field Effect Transistor 10 W, 1805–1880 MHz, 1930–1990 MHz 10 W, 2110–2170 MHz Description Features The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization


    Original     		PDF PTF180101 PTF180101 resistor 220 ohm PTF180101S P4525-ND 349 2110 marking us capacitor pf l1

    PTFB182503FL

    Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503
    Text: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production


    Original     		PDF PTFA041501E PTFA041501F PG-DSO-20-63 PG-RFP-10 H-33265-8 H-34265-8 H-30260-2 H-36260-2 H-30265-2 H-30248-2 PTFB182503FL PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503

    A211801E

    Abstract: A0912 TMA210 PTFA211801E A091201E "RF Power Transistors" ER 2680 PTF080101M PTF080101S PTF140451E
    Text: Preliminary Product Selection Guide Preliminary Product Selection Guide Pac kag es ffor or LDMO S RF P ower Tran sistor s and IC s ack age LDMOS Po ans ors ICs RF Power Product Selection Guide TEP AC - Therm al ly -Enh anc ed C er amic TEPA Thermal ally ly-Enh


    Original     		PDF H-30248-2 H-36248-2 H-30260-2 H-36260-2 H-30265-2 H-31248-2 H-37248-2 H-31260-2 H-31260-2 H-31265-2 A211801E A0912 TMA210 PTFA211801E A091201E "RF Power Transistors" ER 2680 PTF080101M PTF080101S PTF140451E