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    21TT Search Results

    21TT Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    UPA621TT-E1-A Renesas Electronics Corporation N-Channel Mos Field Effect Transistor For Switching, WSOF, /Embossed Tape Visit Renesas Electronics Corporation
    UPA621TT-E2-A Renesas Electronics Corporation N-Channel Mos Field Effect Transistor For Switching Visit Renesas Electronics Corporation
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    21TT Price and Stock

    Micro Commercial Components BAS21T-TP

    DIODE GEN PURP 250V 200MA SOT523
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    DigiKey BAS21T-TP Digi-Reel 2,699 1
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    BAS21T-TP Cut Tape 2,699 1
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    onsemi 2SB1121T-TD-E

    TRANS PNP 25V 2A PCP
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    DigiKey 2SB1121T-TD-E Digi-Reel 740 1
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    2SB1121T-TD-E Cut Tape 740 1
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    Bristol Electronics 2SB1121T-TD-E 2,850
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    Rochester Electronics 2SB1121T-TD-E 110,000 1
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    Flip Electronics 2SB1121T-TD-E 4,000
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    FLIP ELECTRONICS DA121TT1G

    DIODE GP 80V 200MA SC75 SOT416
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    DigiKey DA121TT1G Reel 24,000
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    onsemi DA121TT1G

    DIODE GP 80V 200MA SC75 SOT416
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    Avnet Americas DA121TT1G Reel 0 Weeks, 2 Days 31,250
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    Rochester Electronics DA121TT1G 368,700 1
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    Flip Electronics DA121TT1G 561,000
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    Rochester Electronics LLC DA121TT1G

    DIODE GP 80V 200MA SC75 SOT416
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    DigiKey DA121TT1G Bulk 11,539
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    21TT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 21TT100 Vishay High Power Products High Performance Schottky Generation 5.0, 20 A FEATURES Cathode to base 2 TO-220AB Anode 1 Anode 3 • • • • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency


    Original     		21TT100 O-220AB 18-Jul-08 PDF

    21TT100

    Abstract: No abstract text available
    Text: 21TT100 Vishay High Power Products High Performance Schottky Generation 5.0, 20 A FEATURES Cathode to base 2 TO-220AB Anode 1 Anode 3 • • • • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency


    Original     		21TT100 O-220AB 18-Jul-08 21TT100 PDF

    Untitled

    Abstract: No abstract text available
    Text: 21TT100 Vishay High Power Products High Performance Schottky Generation 5.0, 20 A FEATURES Cathode to base 2 TO-220AB Anode 1 Anode 3 • • • • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency


    Original     		21TT100 O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: 21TT100 Vishay High Power Products High Performance Schottky Generation 5.0, 20 A FEATURES Cathode to base 2 TO-220AB Anode 1 Anode 3 • • • • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency


    Original     		21TT100 O-220AB 11-Mar-11 PDF

    21tt100

    Abstract: No abstract text available
    Text: 21TT100 Vishay High Power Products High Performance Schottky Generation 5.0, 20 A FEATURES Cathode to base 2 TO-220AB Anode 1 Anode 3 • • • • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency


    Original     		21TT100 O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 21tt100 PDF

    21tt

    Abstract: No abstract text available
    Text: 21TT100 Vishay High Power Products High Performance Schottky Generation 5.0, 20 A FEATURES Cathode to base 2 TO-220AB Anode 1 Anode 3 • • • • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency


    Original     		21TT100 O-220AB 12-Mar-07 21tt PDF

    Untitled

    Abstract: No abstract text available
    Text: 21TT100 Vishay High Power Products High Performance Schottky Generation 5.0, 20 A FEATURES Cathode to base 2 TO-220AB Anode 3 Anode 1 • • • • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency


    Original     		21TT100 O-220AB 12-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: 21TT100 Vishay High Power Products High Performance Schottky Generation 5.0, 20 A FEATURES Cathode to base 2 TO-220AB Anode 1 Anode 3 • • • • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency


    Original     		21TT100 O-220AB 11-Mar-11 PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    vishay 1N4007 DO-214AC

    Abstract: VS-30BQ060PbF 40MT160KPBF vishay 1N4007 DO-213AB ss32 control pack 70MT160KPBF 20bq030pbf 430 SBL2040CT v40150 MBR10T100
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . V I S H AY I N T E R T E C H N O L O G Y, I N C . 整流器 整流器 选型指南 肖特 基 整 流 器 超快 恢 复整流器 标 准和快 速恢 复整流器 桥式整流器 w w w. v i s h a y. c o m


    Original     		VMN-SG2178-1111 vishay 1N4007 DO-214AC VS-30BQ060PbF 40MT160KPBF vishay 1N4007 DO-213AB ss32 control pack 70MT160KPBF 20bq030pbf 430 SBL2040CT v40150 MBR10T100 PDF

    vishay 1N4007 DO-214AC

    Abstract: 7 Segment common cathode MBR360 smd diode DGP30 05B2S SMD DIODE UF4007 1N4007 DO-214BA VS-30BQ100PBF 1N5822 SMD 1N4007 MINI MELF
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . V I S HAY INTERTE C HNOLO G Y, IN C . diodes RECTIFIERS Selector Guide Bridge Rectifiers Fast Recover y Rectifier s Schottky Rectifiers Standard Rectifiers Ultrafast Recover y Rectifiers w w w. v i s h a y. c o m


    Original     		VMN-SG2125-1009 vishay 1N4007 DO-214AC 7 Segment common cathode MBR360 smd diode DGP30 05B2S SMD DIODE UF4007 1N4007 DO-214BA VS-30BQ100PBF 1N5822 SMD 1N4007 MINI MELF PDF

    Untitled

    Abstract: No abstract text available
    Text: C3 WMD4M4-XXX M/HITE /MICROELECTRONICS 4Mx4 CMOS FPM Dynamic RAM advan ced* FEATURES • Fast Access Tim e tRAc : 70, 8 0 ,1 00ns ■ TTL-Compatible Inputs and Outputs ■ Pow er Supply: 5 V ± 0 .5 V ■ RAS-Only Refresh ■ Packaging: ■ CAS Before RAS Refresh


    OCR Scan     		PDF

    vdo A 00 0406

    Abstract: 62256 ADC12038C1N HA 12038 ANA 618 CD 4093 PIN DIAGRAM ADC12030 ADC12032 ADC12038 ADC12H032
    Text: N a t i o n a l S e m i c o n d u c t o r ADC 12H030/ADC12H032/ADC12H034/ADC 12H038, ADC 12030/ADC12032/ADC 12034/ADC 12038 Self-Calibrating 12-Bit Plus Sign Serial I/O A /D Converters with MUX and Sample/Hold General Description Features The ADC12030, and ADC12H030 families are 12-bit plus


    OCR Scan     		12H030/ADC12H032/ADC12H034/ADC 12H038, 12030/ADC12032/ADC 12034/ADC 12-Bit ADC12030, ADC12H030 ADC12032/ ADC12H032, vdo A 00 0406 62256 ADC12038C1N HA 12038 ANA 618 CD 4093 PIN DIAGRAM ADC12030 ADC12032 ADC12038 ADC12H032 PDF

    Untitled

    Abstract: No abstract text available
    Text: C3 WMDE4M4-XXX M/HITE /MICROELECTRONICS 4Mx4 CMOS EDO Dynamic RAM advan ced* FEATURES • Fast Access Tim e îr a c : 70, 8 0 ,1 00ns ■ TTL-Compatible Inputs and Outputs ■ Pow er Supply: 5 V ± 0 .5 V ■ RAS-Only Refresh Packaging: ■ CAS Before RAS Refresh


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: C3 WMDE4M4V-XXX M/HITE /MICROELECTRONICS 4Mx4 CMOS EDO Dynamic RAM 3.3V ADVANCED* FEATURES • Fast Access Time îr a c : 70, 8 0 ,1 00ns ■ TTL-Compatible Inputs and Outputs ■ Power Supply: 3.3V ±0.3V ■ RAS-Only Refresh ■ Packaging: ■ CAS Before RAS Refresh


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: HB56SW872ES-6/7 8,388,608-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-765A Z Rev. 1.0 Apr. 4, 1997 Description The HB56SW872ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The


    OCR Scan     		HB56SW872ES-6/7 608-word 72-bit ADE-203-765A HB56SW872ES HB56SW 872ES 16-Mbit HM51W16405) 16-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: C3 WMD4M4V-XXX M/HITE /MICROELECTRONICS 4Mx4 CMOS FPM Dynamic RAM 3.3V ADVANCED* FEATURES • Fast Access Time tRAc : 70, 8 0 ,1 00ns ■ TTL-Compatible Inputs and Outputs ■ Power Supply: 3.3V ±0.3V ■ RAS-Only Refresh ■ Packaging: ■ CAS Before RAS Refresh


    OCR Scan     		PDF