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onsemi NVMFS021N10MCLT1G PTNG 100V LL SO8FL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NVMFS021N10MCLT1G	Cut Tape	2,374		1	1 $1.25 10 $0.783 100 $1.25 1000 $0.4028 10000 $0.4028	Buy Now
	NVMFS021N10MCLT1G	Digi-Reel	2,374		1	1 $1.25 10 $0.783 100 $1.25 1000 $0.4028 10000 $0.4028	Buy Now
Avnet Americas	NVMFS021N10MCLT1G	Reel		15 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.27083	Buy Now
Mouser Electronics	NVMFS021N10MCLT1G					1 $0.98 10 $0.656 100 $0.455 1000 $0.363 10000 $0.284	Get Quote
Avnet Silica	NVMFS021N10MCLT1G			16 Weeks	1,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	NVMFS021N10MCLT1G			17 Weeks	1,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Dale IHCM2321AAEG121N10 CMC 120UH 25A 2LN 480 OHM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IHCM2321AAEG121N10	Bulk	483		1	1 $10.66 10 $8.273 100 $6.5665 1000 $5.625 10000 $5.625	Buy Now
TE Connectivity TRD21N10WL SWITCH ROCKER DPDT 0.4VA 20V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TRD21N10WL	Bulk	31		1	1 $17.86 10 $15.41 100 $13.2871 1000 $11.97398 10000 $11.97398	Buy Now
Avnet Americas	TRD21N10WL	Bulk		32 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
TME	TRD21N10WL				5	1 - 10 $23.55 100 $23.55 1000 $23.55 10000 $23.55	Get Quote
Master Electronics	TRD21N10WL					1 $53.19 10 $53.19 100 $51.61 1000 $17.32 10000 $17.32	Buy Now
Sager	TRD21N10WL				25	1 - 10 - 100 $23.45 1000 $23.45 10000 $23.45	Buy Now
Hammond Manufacturing 1421N100 CLIP NUT STEEL 10-32 100/PK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1421N100	Bulk	12		1	1 $75.23 10 $75.23 100 $54.6658 1000 $54.6658 10000 $54.6658	Buy Now
Mouser Electronics	1421N100		290			1 $74.46 10 $63.03 100 $56.68 1000 $56.68 10000 $56.68	Buy Now
Newark	1421N100	Pack	27		1	1 $79.02 10 $73.49 100 $68.74 1000 $68.74 10000 $68.74	Buy Now
RS	1421N100	Package	2		1	1 $75.98 10 $70.66 100 $67.62 1000 $67.62 10000 $67.62	Buy Now
Powell Electronics	1421N100		256		1	1 $74 10 $74 100 $74 1000 $74 10000 $74	Buy Now

Master Electronics	1421N100					1 $70.17 10 $60.75 100 $54.09 1000 $52.18 10000 $52.18	Buy Now
Neutron USA	1421N100		50			1 $166.06 10 $166.06 100 $166.06 1000 $166.06 10000 $166.06	Buy Now
Infineon Technologies AG SPB21N10 MOSFET N-CH 100V 21A TO263-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPB21N10	Cut Tape			1	1 $2.22 10 $2.22 100 $2.22 1000 $2.22 10000 $2.22	Buy Now

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21N10 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IXFX 21N100F IXFK 21N100F HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching VDSS = 1000 V ID25 = 21 A RDS on = 0.50 Ω trr ≤ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr PLUS 247TM (IXFX)	Original	21N100F 247TM 728B1	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V 21 A ID25 = RDS on = 0.50 W Single MOSFET Die trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol	Original	21N100Q 21N100Q 247TM O-264	PDF
Untitled Abstract: No abstract text available Text: HiPerFET TM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V 21 A ID25 = RDS on = 0.50 Ω Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings	Original	21N100Q 247TM 125oC 728B1	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 21N100Q Electrically Isolated Back Surface VDSS = 1000 V ID25 = 19 A RDS(on) = 0.50 W trr £ 250 ns N-Channel Enhancement Mode, Low Qg, High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions	Original	ISOPLUS247TM 21N100Q	PDF
Untitled Abstract: No abstract text available Text: IXFR 21N100Q HiPerFETTM Power MOSFETs ISOPLUS247TM Electrically Isolated Back Surface Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR Maximum Ratings 1000 1000 V V ±20 ±30 V V	Original	21N100Q ISOPLUS247TM 125OC 728B1	PDF
125OC Abstract: No abstract text available Text: IXFR 21N100Q HiPerFETTM Power MOSFETs ISOPLUS247TM Electrically Isolated Back Surface Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR Maximum Ratings 1000 1000 V V ±20 ±30 V V	Original	21N100Q ISOPLUS247TM 125OC 728B1 125OC	PDF
21N10 Abstract: 21N100Q 125OC Text: HiPerFET TM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V ID25 = 21 A RDS on = 0.50 Ω Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings	Original	21N100Q 247TM 125oC 728B1 21N10 21N100Q 125OC	PDF
21N100Q Abstract: No abstract text available Text: Advanced Technical Information HiPerFET TM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V ID25 = 21 A RDS on = 0.50 W Single MOSFET Die trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol	Original	O-264 21N100Q 21N100Q 247TM	PDF
Untitled Abstract: No abstract text available Text: IXFN 21N100Q HiPerFETTM Power MOSFETs Q-Class Single MOSFET Die VDSS = 1000 V ID25 = 21 A RDS on = 0.50 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings	Original	21N100Q OT-227 E153432 125OC 728B1	PDF
21N100 Abstract: IXTN 85 N 20 21N10 IXTN21N100 Text: IXTK 21N100 IXTN 21N100 High Voltage MegaMOSTMFETs VDSS = 1000 V = 21 A ID25 RDS on = 0.55 Ω N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions Maximum Ratings IXTK IXTN VDSS TJ = 25°C to 150°C 1000 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	21N100 O-264 21N100 IXTN 85 N 20 21N10 IXTN21N100	PDF
Untitled Abstract: No abstract text available Text: IXFR 21N100Q HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS ID25 = 1000 V = 18 A = 0.50 Ω RDS on (Electrically Isolated Back Surface) trr ≤ 250 ns N-Channel Enhancement Mode, Low Qg, High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions	Original	21N100Q ISOPLUS247TM	PDF
125OC Abstract: ixfn21n100q Text: HiPerFETTM Power MOSFETs Q-Class IXFN 21N100Q Single MOSFET Die VDSS = 1000 V = 21 A ID25 RDS on = 0.50 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings	Original	21N100Q OT-227 E153432 125OC 125OC ixfn21n100q	PDF
Untitled Abstract: No abstract text available Text: HiPerFET TM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V 21 A ID25 = RDS on = 0.50 Ω Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings	Original	O-264 21N100Q 21N100Q 247TM 125oC 728B1	PDF
21N100 Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V 21 A ID25 = RDS on = 0.50 Ω Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions VDSS VDGR	Original	21N100Q 247TM 728B1 21N100	PDF

21N100Q Abstract: 125OC Text: IXFN 21N100Q HiPerFETTM Power MOSFETs Q-Class Single MOSFET Die VDSS = 1000 V = 21 A ID25 RDS on = 0.50 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings	Original	21N100Q OT-227 E153432 125OC 728B1 21N100Q 125OC	PDF
21N10 Abstract: No abstract text available Text: IXFN 21N100Q HiPerFETTM Power MOSFETs Q-Class Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt miniBLOC, SOT-227 B IXFN E153432 Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	21N100Q OT-227 E153432 VOT-227 21N10	PDF
21N100Q Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V ID25 = 21 A RDS on = 0.50 W Single MOSFET Die trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/ dt, Low trr PLUS 247TM (IXFX)	Original	21N100Q 21N100Q 247TM O-264	PDF
21N100Q Abstract: 21N100 125OC Text: HiPerFETTM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V 21 A ID25 = RDS on = 0.50 Ω Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions VDSS VDGR	Original	21N100Q 247TM 125OC 728B1 21N100Q 21N100 125OC	PDF
21N10 Abstract: SPB21N10 Text: 21N10 21N10,21N10 Target data sheet SIPMOS =Power-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode •=175°C operating temperature • Avalanche rated P-TO262-3-1 100 V RDS on 85 mΩ ID 21 A P-TO263-3-2 P-TO220-3-1 • dv/dt rated	Original	SPI21N10 SPP21N10 SPB21N10 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPB21N10 SPI21N10 21N10	PDF
transistor 12n60c Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design	Original	ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET	PDF
21N100 Abstract: 21N10 ixtw DIXYS IXTN21N100 Text: g ix Y S _ IXTK 21N100 IXTN 21N100 High Voltage MegaMOS FETs VDSS ^D25 P DS on = 1000 = 21 A = 0.55 N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions Maximum Ratings IXTK IXTN VDSS Tj =25°Cto150°C Tj = 25° C to 150° C; RGS= 1 MQ	OCR Scan	21N100 O-264 Cto150 OT-227 21N100 21N10 ixtw DIXYS IXTN21N100	PDF
DIODE B44 sot Abstract: IXTK21 B44 diode IXTN21N100 Text: IXTK21 N100 21N100 High Voltage MegaMOS FETs DSS D25 RDS on = 1000 V = 21 A = 0.55 Q N-Channel, Enhancement Mode TO-264 AA (IXTK) Maximum Ratings IXTN IXTK Symbol Test Conditions VDSS T, = 25°C to 150°C Tj = 25°C to 150°C; Ras = 1 MO V«, Vas V	OCR Scan	IXTK21 IXTN21N100 O-264 21N100 21N100 DIODE B44 sot B44 diode IXTN21N100	PDF
12N60c equivalent Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t	OCR Scan	ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q	PDF
75N1 Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH	OCR Scan	76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B	PDF

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21N10 Search Results

21N10 Price and Stock

onsemi NVMFS021N10MCLT1G

Vishay Dale IHCM2321AAEG121N10

TE Connectivity TRD21N10WL

Hammond Manufacturing 1421N100

Infineon Technologies AG SPB21N10

21N10 Datasheets Context Search

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125OC

21N10

21N100Q

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21N100

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125OC

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21N100

21N100Q

21N10

21N100Q

21N100Q

21N10

transistor 12n60c

21N100

DIODE B44 sot

12N60c equivalent

75N1