Untitled
Abstract: No abstract text available
Text: TSMF1000/1020/1030/1040 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in SMD Package Description TSMF1000 TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome
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TSMF1000/1020/1030/1040
TSMF1000
TSMF1000
TSMF1020
TSMF1030
TSMF1040
TEMD1000
D-74025
21-May-03
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Si4921DY
Abstract: No abstract text available
Text: SPICE Device Model Si4921DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4921DY
0-to-10V
21-May-03
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Untitled
Abstract: No abstract text available
Text: TSML1000/1020/1030/1040 VISHAY Vishay Semiconductors Extented Power IR Emitting Diode in SMD Package Description TSML1000 TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage
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TSML1000/1020/1030/1040
TSML1000
TSML1020
TSML1030
TEMT1000
TSML1040
D-74025
21-May-03
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Untitled
Abstract: No abstract text available
Text: TEMD1000 / 1020 / 1030 / 1040 VISHAY Vishay Semiconductors Silicon PIN Photodiode TEMD1000 Description TEMD1020 TEMD1000 series are high speed silicon PIN photodiodes molded in SMT package with dome lens. Due to integrated Daylight filter devices are sensitive
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TEMD1000
TEMD1020
TEMD1030
TEMD1040
TSMF1000
TSML1000
D-74025
21-May-03
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EA-06-125BZ-350
Abstract: EA-06-125TK-350 strain Gages LEA-06-W125E-350 125TK flexible immersion temperature sensor water MM Gages 3R350
Text: Sealed Weldable Strain Gages Vishay Micro-Measurements Special Purpose Strain Gages - Sealed Weldable Strain Gages Vishay Micro-Measurements Sealed Weldable Strain Gages are specially designed for spot welding to structures and components. They are ideally used for applications where
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EA-06-125BZ-350
LEA-06-W125F-350/10L
21-May-03
EA-06-125BZ-350
EA-06-125TK-350
strain Gages
LEA-06-W125E-350
125TK
flexible immersion temperature sensor water
MM Gages
3R350
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Diode IR 8294
Abstract: S 1040 smd TEMT1000 TEMT1020 TEMT1030 TEMT1040 TSML1000
Text: TEMT1000 / 1020 / 1030 / 1040 VISHAY Vishay Semiconductors Silicon Phototransistor TEMT1000 Description TEMT1020 TEMT1000 series are high speed and high sensitive silicon NPN epitaxial planar phototransistors in SMD package with dome lens. Due to integrated Daylight
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TEMT1000
TEMT1000
TEMT1020
TEMT1030
TEMT1040
TSML1000
D-74025
21-May-03
Diode IR 8294
S 1040 smd
TEMT1020
TEMT1030
TEMT1040
TSML1000
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SUD40N06-25L
Abstract: No abstract text available
Text: SPICE Device Model SUD40N06-25L Vishay Siliconix N-Channel Enhancement-Mode MOSFET, Logic Level CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Model Subcircuit • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD40N06-25L
0-to-10V
21-May-03
SUD40N06-25L
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Untitled
Abstract: No abstract text available
Text: TSML1000/1020/1030/1040 VISHAY Vishay Semiconductors Extented Power IR Emitting Diode in SMD Package Description TSML1000 TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage
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Original
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TSML1000/1020/1030/1040
TSML1000
TSML1020
TSML1030
TEMT1000
TSML1040
D-74025
21-May-03
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Untitled
Abstract: No abstract text available
Text: TEMT1000 / 1020 / 1030 / 1040 VISHAY Vishay Semiconductors Silicon Phototransistor TEMT1000 Description TEMT1020 TEMT1000 series are high speed and high sensitive silicon NPN epitaxial planar phototransistors in SMD package with dome lens. Due to integrated Daylight
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TEMT1000
TEMT1020
TEMT1030
TEMT1040
TSML1000
D-74025
21-May-03
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vishay 1030
Abstract: No abstract text available
Text: TEMT1000/1020/1030/1040 VISHAY Vishay Semiconductors Silicon Phototransistor Description TEMT1000 series are high speed and high sensitive silicon NPN epitaxial planar phototransistors in SMD package with dome lens. Due to integrated Daylight filter devices are sensitive for IR radiation only.
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TEMT1000/1020/1030/1040
TEMT1000
TEMT1020
TEMT1030
TSML1000
TEMT1040
D-74025
21-May-03
vishay 1030
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TEMD1000
Abstract: TSMF1000 TSMF1020 TSMF1030 TSMF1040
Text: TSMF1000/1020/1030/1040 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in SMD Package Description TSMF1000 TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome
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TSMF1000/1020/1030/1040
TSMF1000
TSMF1000
TSMF1020
TSMF1030
TSMF1040
TEMD1000
D-74025
21-May-03
TEMD1000
TSMF1020
TSMF1030
TSMF1040
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Untitled
Abstract: No abstract text available
Text: S392D VISHAY Vishay Semiconductors Dual RF PIN Diode Features 3 • Wide frequency range 10 MHz to 1 GHz Applications 1 Current controlled HF resistance in adjustable attenuators 2 18109 Mechanical Data Case: SOT-23 Plastic Package Weight: 8 mg Parts Table
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S392D
OT-23
S392D
S392D-GS08
D-74025
21-May-03
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Si4435BDY
Abstract: diode 91A
Text: SPICE Device Model Si4435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4435BDY
0-to-10V
21-May-03
diode 91A
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vishay 1030
Abstract: TEMD1000 TEMD1020 TEMD1030 TEMD1040 TSMF1000 TSML1000 1030 mhz filter
Text: TEMD1000/1020/1030/1040 VISHAY Vishay Semiconductors Silicon PIN Photodiode Description TEMD1000 TEMD1000 series are high speed silicon PIN photodiodes molded in SMT package with dome lens. Due to integrated Daylight filter devices are sensitive for IR radiation only.
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TEMD1000/1020/1030/1040
TEMD1000
TEMD1000
TEMD1020
TEMD1030
TEMD1040
TSMF1000
TSML1000
D-74025
21-May-03
vishay 1030
TEMD1020
TEMD1030
TEMD1040
TSML1000
1030 mhz filter
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Untitled
Abstract: No abstract text available
Text: REVISIONS DESCRIPTION REV 01 o C DATE RELEASED R EVISED APPRDVED 3 /2 0 /9 8 PER GV 0S 14-0146-02 21MAY03 JGH TYP ELECTRICAL Nominal In p ed an ce lllhns 5D F re q u e n c y Range (GHz) DC t o I n t e r f a c e Dimensions 18 V o lt R ating (VRMS MAX) N/A
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21MAY03
90-fCGHz)
MIL-STD-202,
85D71
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBUSHED. 3 | RELEASED FOR PUBLICATION - ,- 2 . ALL RIGHTS RESERVED. 1 LOC DIST CM 0 0 REVISIO N S ' LTR D DATE REV PER EC 0 G 3 B - 0 3 8 1 - 0 3 21MAY03 DUN APVD SC CJ 0 . 0 0 0 7 6 1 . 0 0 0 0 3 0 ] M IN G O LD A T P O IN T O F M E A S U R E M E N T IN T H E L O C A L IZ E D G OLD P LA TE
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0G3B-0381-03
31MAR2000
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c216842
Abstract: No abstract text available
Text: METRIC DO NOT SCALE DI MENS I0N5 IN mm -► r [ mm. L b A m a x .1 7 ,0 1 & K.J PHOSPHORBRONZE # 4 HD/THICKNESS 0 ,8mm 2,54/jm 5n OVER 1,25pm MIN. NICKEL. -c - ^— K 6 D I A /> \ 8 „5 NOTES 1 1 o TT - - \ \ / \ p O, 5 2 ,7 5
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54/jm
54pm--
C-216842
c216842
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Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - 2 - ALL RIGHTS RESERVED. REVISIONS LOC DIST CM 00 P LTR E DESCRIPTION EC 0G3B 0215 DATE DWN 23SEP05 05 APVD BSV RCJ 0 . 0 0 0 7 6 [ . 0 0 0 0 3 0 ] MIN G O L D A T P O IN T O F
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23SEP05
21MAY03
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 3 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - 2 - ALL RIGHTS RESERVED. LOC DIST CM 00 R E VIS IO N S LTR DESCRIPTION DATE DWN 23SEP05 EC 0G3B 0215 05 APVD BSV RCJ 0 . 0 0 0 7 6 [ . 0 0 0 0 3 0 ] MIN G O L D A T P O IN T O F
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23SEP05
21MAY03
31MAR2000
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBUSHED. | RELEASED FOR PUBLICATION - ,- . LOC ALL RIGHTS RESERVED. DIST CM 00 REVISIO N S 1 LTR E A 0 .3 8 2. C U T - O F F TAES—— h— W IR E R AN GE: 0 . 5 - 2 m m 2 [ 2 0 - 1 4 IN S U L A T IO N R A N G E : 3 . 3 0 - 5 . 0 8 D IM E N S IO N S
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0G3B-0381-03
00076J\000030]
00076J"
31MAR2000
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Untitled
Abstract: No abstract text available
Text: r REVISIO NS REV ELECTRICAL Nominal Im p ed an ce D hns 50 V o l t R a tin g (VRMS MAX) 500 V S V R 1.05+.DD5f(GHz> DC t o 18 GHz I n s e r t io n L o s s <dB MAX) ,03x Vf(GHz> RF L e a k a g e (dB MIN) (F u lly M ated) V ib r a t io n M IL-STD -202, M eth od
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0S14-0146-Q2
21MAY03
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Untitled
Abstract: No abstract text available
Text: .878 .162 MATING P LA N E — - — MOUNTING SURFACE ELECTRICAL Nominal Impedance Dhns 50 F re q u e n c y Range (GHz) DC t o 500 18 GHz In s e rtio n L o ss <dB MAX) ,03x \/f(GHz) RF L e a k a g e (dB MIN) (Fully Mated) V ib ra tio n MIL-STD-202, Method
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MIL-STD-202,
-348A
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - LOC ALL RIGHTS RESERVED. DIST AJ R E V IS IO N S 6 P LTR DESCRIPTION D D R E V IS E D PER ECO-05-008694 DATE DWN APVD 14NOV05 BM JL D FOLD CENTER CONDUCTOR
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14NOV05
ECO-05-008694
MAY2003
21MAY03
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Untitled
Abstract: No abstract text available
Text: |— .335 MAX. - * j ~r- N .3 9 8 MAX. .016 .012 . 3 7 0 M IN . .017:B8? d i a . 5 PINS 1 . 3 7 0 MAX. — A .031 ± . 0 0 3 .0 3 5 ± . 0 1 0 T XX O O o- .1 0 0± .0 03 T 4- . 3 7 0 MAX. .100±.003 RE V . 0 - . 2 0 0 ± -0 0 3 DCO 143755 C O I L : § 25 C
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F-718
M39016/7-036M
J1MAC-26XMS
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