SiHL640S
Abstract: SMD-220 s8143 smd e3a IRL640S S-81431-Rev vishay smd mosfet SMD DIODE marking AB SMD diode NC smd diode marking 12c
Text: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single • • • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating
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IRL640S,
SiHL640S
SMD-220
SMD-220
18-Jul-08
s8143
smd e3a
IRL640S
S-81431-Rev
vishay smd mosfet
SMD DIODE marking AB
SMD diode NC
smd diode marking 12c
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30CPH03
Abstract: IRFP250
Text: 30CPH03PbF Vishay High Power Products Ultrafast Rectifier, 2 x 15 A FRED PtTM FEATURES Base common cathode 2 • Ultrafast recovery time Pb-free • Low forward voltage drop Available RoHS* • Low leakage current COMPLIANT • 175 °C operating junction temperature
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30CPH03PbF
O-247AC
18-Jul-08
30CPH03
IRFP250
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SiHFP22N50A
Abstract: IRFP22N50A marking M3 IRFP22N50
Text: IRFP22N50A, SiHFP22N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.23 Qg (Max.) (nC) 120 Qgs (nC) 32 Qgd (nC) 52 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFP22N50A,
SiHFP22N50A
O-247
18-Jul-08
IRFP22N50A
marking M3
IRFP22N50
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mcd 14
Abstract: No abstract text available
Text: VLMK/Y62. Vishay Semiconductors Power SMD LED CLCC-6 Flat FEATURES • Utilizing AlInGaP technology • Very low thermal resistance • Optical efficiency 35 lm/W e4 • Luminous intensity and color grouping • Luminous intensity ratio per package unit IVmax./IVmin. ≤ 1.6
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VLMK/Y62.
JESD22-A114-B
J-STD-020C
2002/95/EC
2002/96/EC
AEC-Q101
18-Jul-08
mcd 14
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IRLR024
Abstract: IRLU024 SiHLR024 SiHLR024-E3 SiHLU024 SiHLU024-E3
Text: IRLR024, IRLU024, SiHLR024, SiHLU024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 18 • Straight Lead (IRLU024/SiHLU024) Qgs (nC) 4.5 • Available in Tape and Reel 12 • Logic-Level Gate Drive
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IRLR024,
IRLU024,
SiHLR024
SiHLU024
IRLR024/SiHLR024)
IRLU024/SiHLU024)
O-252)
O-251)
18-Jul-08
IRLR024
IRLU024
SiHLR024-E3
SiHLU024-E3
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IRFB9N65A applications
Abstract: IRFB9N65A SiHFIB5N65A SiHFB9N65A SiHFB9N65A-E3 smps power
Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) (Ω) VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*
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IRFB9N65A,
SiHFB9N65A
O-220
18-Jul-08
IRFB9N65A applications
IRFB9N65A
SiHFIB5N65A
SiHFB9N65A-E3
smps power
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IRFR110
Abstract: IRFU110 SiHFR110 SiHFR110-E3 SIHFU110
Text: IRFR110, IRFU110, SiHFR110, SiHFU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 0.54 Qg (Max.) (nC) 8.3 • Surface Mount (IRFR110/SiHFR110) Qgs (nC)
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IRFR110,
IRFU110,
SiHFR110
SiHFU110
IRFU110/SiHFU110)
IRFR110/SiHFR110)
O-252)
O-251)
18-Jul-08
IRFR110
IRFU110
SiHFR110-E3
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IRFPS35N50L
Abstract: SiHFPS35N50L SiHFPS35N50L-E3
Text: IRFPS35N50L, SiHFPS35N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.125 Qg (Max.) (nC) 230 Qgs (nC) 65 Qgd (nC) 110 Configuration
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IRFPS35N50L,
SiHFPS35N50L
SUPER-247TM
18-Jul-08
IRFPS35N50L
SiHFPS35N50L-E3
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70CRU02
Abstract: IRFP250
Text: 70CRU02PbF Vishay High Power Products Ultrafast Rectifier, 2 x 35 A FRED PtTM FEATURES • • • • • • Two common-cathode diodes Available Ultrafast reverse recovery Ultrafast reverse recovery current shape RoHS* COMPLIANT Low forward voltage drop
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70CRU02PbF
O-218
70CRU02
18-Jul-08
IRFP250
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IRLIZ24G
Abstract: SiHLIZ24G-E3 SiHLIZ24G
Text: IRLIZ24G, SiHLIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V
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IRLIZ24G,
SiHLIZ24G
O-220
18-Jul-08
IRLIZ24G
SiHLIZ24G-E3
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IRFD220PBF
Abstract: IRFD220 SiHFD220 SiHFD220-E3
Text: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRFD220,
SiHFD220
18-Jul-08
IRFD220PBF
IRFD220
SiHFD220-E3
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16CTU04-1
Abstract: 16CTU04S IRFP250
Text: 16CTU04SPbF/16CTU04-1PbF Vishay High Power Products Ultrafast Rectifier, 2 x 8 A FRED PtTM FEATURES 16CTU04-1PbF 16CTU04SPbF • Ultrafast recovery time Available • Low forward voltage drop RoHS* • Low leakage current COMPLIANT • 175 °C operating junction temperature
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16CTU04SPbF/16CTU04-1PbF
16CTU04-1PbF
16CTU04SPbF
18-Jul-08
16CTU04-1
16CTU04S
IRFP250
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smd diode 841
Abstract: No abstract text available
Text: IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 5 V 0.077 Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating
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IRL540S,
SiHL540S
SMD-220
18-Jul-08
smd diode 841
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Untitled
Abstract: No abstract text available
Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
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IRFBC30A,
SiHFBC30A
O-220
O-220
IRFBC30APbF
SiHFBC30Amerchantability
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: SQV90N06-05 Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 60 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.0052 ID (A) Configuration Single COMPLIANT AEC-Q101 RELIABILITY D TO-262
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SQV90N06-05
O-262
AEC-Q101
O-262
SQV90N06-05-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature
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IRFD014,
SiHFD014
12-Mar-07
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inductor 1 mH
Abstract: No abstract text available
Text: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 1.8 Available • Repetitive Avalanche Rated • Surface Mount (IRFR320/SiHFR320) 20 Qgs (nC)
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IRFR320,
IRFU320,
SiHFR320
SiHFU320
IRFR320/SiHFR320)
IRFU320/SiHFU320)
O-252)
O-251)
12-Mar-07
inductor 1 mH
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4.5v to 100v input regulator
Abstract: No abstract text available
Text: IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Max.) (Ω) VGS = 10 V 7.0 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt
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IRFR1N60A,
IRFU1N60A,
SiHFR1N60A
SiHFU1N60A
O-252)
O-251)
12-Mar-07
4.5v to 100v input regulator
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Untitled
Abstract: No abstract text available
Text: IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Available • Logic-Level Gate Drive 0.050 • RDS(on) Specified at VGS = 4 V and 5 V
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IRLZ34,
SiHLZ34
O-220
O-220
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 60 RDS(on) (Ω) • Surface Mount (IRFZ24S/SiHFZ24S) VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration
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IRFZ24S,
IRFZ24L,
SiHFZ24S
IRFZ24S/SiHFZ24S)
IRFZ24L/SiHFZ24L)
O-262)
O-263)
12-Mar-07
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2160 transistor datasheet
Abstract: a 2160 216-0216
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2160 MHz 4.7 VDC 2160 MHz Tuning Voltage: 0.3 Supply Voltage: 7.6 8.0 8.4 VDC Output Power: +5.0 +7.0 +9.0 dBm 29 35 mA Harmonic Suppression 2 Harmonic :
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10kHz
100kHz
CVCO55CC-2160-2160
21-Jul-08
2160 transistor datasheet
a 2160
216-0216
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600d sprague
Abstract: 600D157G030DG4 600D107G050DJ4 600D686G050DG4 600D126F250DJ4 600D225F sprague 600d kd 505 transistor 375 600D
Text: 600D Vishay Sprague Aluminum Capacitors Miniature, Axial Lead, High Reliability FEATURES • Wide temperature range • Foil tantalum replacement • Unique Teflon end seal for long life Fig.1 Component outline • High vibration capability • Life test 2000 hours at + 125 °C
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18-Jul-08
600d sprague
600D157G030DG4
600D107G050DJ4
600D686G050DG4
600D126F250DJ4
600D225F
sprague 600d
kd 505
transistor 375
600D
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3414a
Abstract: 11SM7601-H4 TWZ4500 175020-1 R-092
Text: F O - 5 5 1 1 1 -A HONEYWELL P A R T NUMBER PLASTIC PLUNGER REV DOCUMENT 9 0041782 CHANGED PK BY 21JUL08 CHECK ASD 11SM7601-H4 PRODUCT CODE TWZ4500 .0 2 0 296 1 .010 MAX .0 4 6 R B B 0 9 2 DIA .3 5 6 ± .010 1_ ,094 ±.0.0 -.030 MAX A -088 l.gg?—1 .0 9 8
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11SM7601-H4
TWZ4500
21JUL08
FORCE--56
FORCE----14
5M-1982
3414a
11SM7601-H4
TWZ4500
175020-1
R-092
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X9327
Abstract: 341SM169-H252 T85 1e4 Switch
Text: F O - 5 5 1 1 1 -A HONEYWELL P A R T NUMBER REV DOCUMENT 3 0041782 CORROSION RESISTANTSTEEL ACTUATOR 341SM169-H252 C H A N G E D BY PK 21JUL08 CHECK ASD PRODUCT CODE TZA2939 POINT "A " /4\ .080 MAX PRETRAVEL / 4 B B .3564.010 1 .155 *.015 •088 ^ ' q q ^/1
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341SM169-H252
TZA2939
21JUL08
X93276
FORCE--45
250VAC
5M-1982
X9327
341SM169-H252
T85 1e4 Switch
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