Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 600V IGBT IXGH64N60B3 IXGT64N60B3 VCES = 600V IC110 = 64A VCE sat ≤ 1.8V Medium speed low Vsat PT IGBTs for 5 - 40kHz switching tfi(typ) = 88ns Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600
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IXGH64N60B3
IXGT64N60B3
IC110
40kHz
64N60B3
9-08-A
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IXGH64N60B3
Abstract: Mj138
Text: Preliminary Technical Information GenX3TM 600V IGBT IXGH64N60B3 IXGT64N60B3 VCES = 600V IC110 = 64A VCE sat ≤ 1.8V Medium speed low Vsat PT IGBTs for 5 - 40kHz switching tfi(typ) = 88ns Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600
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IXGH64N60B3
IXGT64N60B3
IC110
40kHz
64N60B3
9-08-A
IXGH64N60B3
Mj138
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PDF
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Grasslin digi 56-72
Abstract: TALENTO-894 grasslin digi 20 Grasslin V86 diode T35 12H grasslin digi 12 TALENTO-891 cr353ac4aa1 Grasslin 471 GE CR353GJ3AA1
Text: Time AND Energy Controls y ll specif a h s r o t l Contrac 4 four channe 9 8 Talento m y progra 365 da al No Equ furnish ll a h s r V to Contrac slin DTM s a r G ll ta and ins Control t s o r f e D al No Equ shall Electromechanical Time Controls Contractor install
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-I-120
LM230
Grasslin digi 56-72
TALENTO-894
grasslin digi 20
Grasslin V86
diode T35 12H
grasslin digi 12
TALENTO-891
cr353ac4aa1
Grasslin 471
GE CR353GJ3AA1
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IXGX64N60B3D1
Abstract: PLUS247 123B16
Text: IXGK64N60B3D1 IXGX64N60B3D1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) Medium speed low Vsat PT IGBTs 5-40 kHz switching = = ≤£ = 600V 64A 1.8V 88ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXGK64N60B3D1
IXGX64N60B3D1
IC110
O-264
2x61-06A
IXGX64N60B3D1
PLUS247
123B16
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Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBT with Diode IXGK64N60B3D1 IXGX64N60B3D1 VCES IC110 VCE sat tfi(typ) Medium speed low Vsat PT IGBTs 5-40 kHz switching = = ≤£ = 600V 64A 1.8V 88ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXGK64N60B3D1
IXGX64N60B3D1
IC110
O-264
2x61-06A
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ICE3B0365J
Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)
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SPP21N50C3
SPA21N50C3
SPI21N50C3
SPP16N50C3
SPA16N50C3
SPI16N50C3
SPW21N50C3
SPP12N50C3
SPA12N50C3
SPI12N50C3
ICE3B0365J
ICE3BR4765J
TDA16888
ICE2A765P2
ICE2PCS01G
ICE1PCS02G
ICE2B0565
ICE1PCS02
ICE2pcs02
IPI60R099CP
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Untitled
Abstract: No abstract text available
Text: 500, 750, 1000 WATTS POWER FACTOR CORRECTED SINGLE OUTPUT, FORCED CURRENT SHARING SPF-500 SPF-750 SPF-1000 Featuring: • Forced current sharing for N +1 redundancy • Universal AC input • 0.99 typical power factor • Low ripple and noise • DC power good and AC power
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SPF-500
SPF-750
SPF-1000
J1-10
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ST T4 D560
Abstract: ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4
Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents CICHLID 3 CPU :Intel Yonah 533/667 Merom
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YONAH667
Sheet18.
Sheet19.
Sheet20
Sheet24.
Sheet25
Sheet29.
Sheet30
Sheet32.
Sheet33.
ST T4 D560
ST D560 T4
ST 1803 DHI
B-566
u574
j5512
46d1
BA09-00009A
SAMSUNG GDDR3
54B4
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IRF6156
Abstract: 21A 8 BALL
Text: PD - 94592A IRF6156 Ultra Low RSS on per Footprint Area l Low Thermal Resistance l Bi-Directional N-Channel Switch l Super Low Profile (<.8mm) l Available Tested on Tape & Reel l ESD Protection Diode Description l FlipFET Power MOSFET VSS 20V RSS(on) max
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4592A
IRF6156
IA-481
IA-541.
IRF6156
21A 8 BALL
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DIODE S2
Abstract: 21A 8 BALL IRF6156
Text: PD - 94592 IRF6156 Ultra Low RSS on per Footprint Area l Low Thermal Resistance l Bi-Directional N-Channel Switch l Super Low Profile (<.8mm) l Available Tested on Tape & Reel l ESD Protection Diode Description l FlipFET Power MOSFET VSS 20V RSS(on) max
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IRF6156
IA-481
IA-541.
DIODE S2
21A 8 BALL
IRF6156
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VRM Section of Motherboard
Abstract: Socket 1150 VID pinout intel 1150 Socket PIN diagram intel vrm circuit testing intel MOTHERBOARD pcb CIRCUIT diagram foxconn motherboard vrm circuit testing celeron MOTHERBOARD CIRCUIT diagram celeron processor
Text: VRM 8.5 DC–DC Converter Design Guidelines March 2002 Order Number 249659-002 intel VRM 8.5 DC-DC Converter Design Guidelines ® Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as
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0E-06
068xh
068xh)
VRM Section of Motherboard
Socket 1150 VID pinout
intel 1150 Socket PIN diagram
intel vrm circuit testing
intel MOTHERBOARD pcb CIRCUIT diagram
foxconn motherboard
vrm circuit testing
celeron MOTHERBOARD CIRCUIT diagram
celeron processor
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SC2411
Abstract: No abstract text available
Text: 100, 150, 165, 180, 250, 350, 360, 500, 520 WATTS SINGLE OUTPUT SC-100 SC-150 SC-165 SC-180 SC-250 SC-350 SC-360 SC-500 SC-520 Featuring: • Output voltages from 3.3 V to 48 V • Power density to 3.6 watts/in3 • Meets international safety agency requirements
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SC-100
SC-150
SC-165
SC-180
SC-250
SC-350
SC-360
SC-500
SC-520
SC-5-30
SC2411
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Untitled
Abstract: No abstract text available
Text: GenX3TM 300V IGBT IXGA42N30C3 VCES IC110 VCE sat tfi typ IXGH42N30C3 IXGP42N30C3 High Speed PT IGBTs for 50-150kHz switching = = ≤ = 300V 42A 1.85V 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGA42N30C3
IC110
IXGH42N30C3
IXGP42N30C3
50-150kHz
O-263
42N30C3
5-08-A
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IXGH42N30C3
Abstract: 80508 200V TO-247 42A70
Text: GenX3TM 300V IGBT IXGA42N30C3 VCES IC110 VCE sat tfi typ IXGH42N30C3 IXGP42N30C3 High Speed PT IGBTs for 50-150kHz switching = = ≤ = 300V 42A 1.85V 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGA42N30C3
IC110
IXGH42N30C3
IXGP42N30C3
50-150kHz
O-263
42N30C3
5-08-A
IXGH42N30C3
80508
200V TO-247
42A70
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unipower JM 5000
Abstract: JP5000 unipower JM 6000 JN 5000 03-06-2092 Unipower jn6000 MIL-STD-810D 514.3 JM7000 775-1402-000
Text: Call U.S. : 954 346-2442 • sales @ unipower-corp.com Call U.K.: +44 (0) 1903 768200 • info@ unipower-europe.com C O R P O R A T I O N J SERIES: INDUSTRY STANDARD Single Output, 800-1200 Watts FEATURES Power Density to 3.3W/Cubic Inch Industry Standard 5” x 8” Cases
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LVD73/23/
j-revA-07-25-01
unipower JM 5000
JP5000
unipower JM 6000
JN 5000
03-06-2092
Unipower
jn6000
MIL-STD-810D 514.3
JM7000
775-1402-000
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TMPC-400H
Abstract: No abstract text available
Text: TMPC-400H “Haswell Ready” Medical Grade 400W ATX Power Supply FEATURES • • • • • • Meets ATX12V Standard Intel’s Haswell Compatible BF Rated Outputs 80PLUS Gold High Efficiency 5,000 Meters Operating Altitude IEC/EN 60601-1 3rd & ANSI/AAMI ES 60601-1 Approvals
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TMPC-400H
ATX12V
80PLUS
TMPC-400H
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pt sensors
Abstract: grundfos 34-0202D-K 33-54161-K Fuse 240V 30 A LP1 contactor
Text: PARTS CATALOG 2014/2015 R R R Call 951 273-7575 R Visit us at hydroquip.com About us: Hydro-Quip . the Smart Choice Hydro-Quip has been providing innovative, dependable and high quality portable spa and hot tub retrofit controls to the industry for over 30 years. Hydro-Quip continues to offer the broadest selection of
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Cherokee International
Abstract: No abstract text available
Text: CH EROK EE I N T ERNAT I ON AL “The Powerful Choice” CRP1 0 0 0 Se rie s 1000W 48V Bulk Power Hot Swap Fault Tolerant Power Supplies Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Power Factor Corrected I²C Signal interface 0°C to 55°C operation
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IEC320
EN55022
SP394
PCF8574A
Cherokee International
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PDF
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IXGJ50N60C4D1
Abstract: G50N60
Text: Preliminary Technical Information High-Gain IGBT w/ Diode IXGJ50N60C4D1 VCES = 600V IC110 = 21A VCE sat ≤ 2.50V (Electrically Isolated Tab) High-Speed PT Trench IGBT ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IXGJ50N60C4D1
IC110
O-247TM
E153432
IC110
IF110
50N60C4
0-06-11-A
IXGJ50N60C4D1
G50N60
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G50N60
Abstract: No abstract text available
Text: Preliminary Technical Information High-Gain IGBT w/ Diode VCES = 600V IC110 = 21A VCE sat ≤ 2.50V IXGJ50N60C4D1 (Electrically Isolated Tab) High-Speed PT Trench IGBT ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IC110
IXGJ50N60C4D1
O-247TM
E153432
IF110
50N60C4
0-06-11-A
G50N60
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PS8615
Abstract: 30442 ck 17a PI74 PI74SSTV32852 PI74SSTV32852NB PS-8
Text: PI74SSTV32852
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PI74SSTV32852
24-Bit
48-Bit
SSTV32852
114-Ball
PI74SSTV32852
PI74SSTV32852NB
PS8615
PS8615
30442
ck 17a
PI74
PI74SSTV32852NB
PS-8
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PCIC16W7M400A1
Abstract: PCIC16W7M400 500w 12v circuit diagram RA50A PCIH47M400A1 41a01 6-32 x .250 6.3 L. SCREW PCIC16W
Text: G SERIES Open Frame / Redundant Hot Swap Power Supplies 1-5 Outputs, 300-500 Watts FEATURES 7 watts per cubic inch 75-80 % typical efficiency 1U high – narrow profile Power Factor Corrected EN61000-3-2 compliant Universal Input UL, CSA, TÜV IEC, EN , CB
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EN61000-3-2
PCIC16W7M400A1
PCIC16W7M400
500w 12v circuit diagram
RA50A
PCIH47M400A1
41a01
6-32 x .250 6.3 L. SCREW
PCIC16W
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P600-96-2
Abstract: P600-96-5
Text: T E C H N O P sV N a r t e L O im Gg I P600 SERIES E Single output S • • • • • Active harmonic correction to EN61000-3-2 90VAC to 264VAC universal input Compact 2.5 x 5.0 x 11 inch case DC OK including LED UL, CSA and TUV approvals P600 Series power supplies are harmonically corrected 600W modules. These
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OCR Scan
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EN61000-3-2
90VAC
264VAC
P600-96-2
P600-96-5
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PDF
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Untitled
Abstract: No abstract text available
Text: Metallized Polypropylene Film Capacitors MKP in Plastic Case B 32 652 . B 32 656 MKP wound capacitors Very small dimensions Construction -c: • Dielectric: polypropylene • Wound capacitor technology with internal series connection for l/R >1250 Vdc
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OCR Scan
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KMK0200-U
6335b05
630Vdc/250V
Vdc/250
A235bD5
DD7H67T
Vdc/700
623SbOS
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PDF
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