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    IXYS Corporation IXGA42N30C3

    IGBT 300V 223W TO263AA
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    IXGA42N30C3 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXGA42N30C3 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 300V 223W TO263AA Original PDF

    IXGA42N30C3 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: GenX3TM 300V IGBT IXGA42N30C3 VCES IC110 VCE sat tfi typ IXGH42N30C3 IXGP42N30C3 High Speed PT IGBTs for 50-150kHz switching = = ≤ = 300V 42A 1.85V 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGA42N30C3 IC110 IXGH42N30C3 IXGP42N30C3 50-150kHz O-263 42N30C3 5-08-A

    IXGH42N30C3

    Abstract: 80508 200V TO-247 42A70
    Text: GenX3TM 300V IGBT IXGA42N30C3 VCES IC110 VCE sat tfi typ IXGH42N30C3 IXGP42N30C3 High Speed PT IGBTs for 50-150kHz switching = = ≤ = 300V 42A 1.85V 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGA42N30C3 IC110 IXGH42N30C3 IXGP42N30C3 50-150kHz O-263 42N30C3 5-08-A IXGH42N30C3 80508 200V TO-247 42A70

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		PDF D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250