Untitled
Abstract: No abstract text available
Text: F-214 Rev 21MAY14 FTSH–120–02–L–D FTSH–120–01–L–D–RA FTSH–125–01–F–D (1,27 mm) .050" FTSH SERIES THROUGH-HOLE MICRO HEADER SPECIFICATIONS For complete specifications see www.samtec.com?FTSH Impedance matched for high speed applications
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F-214
21MAY14)
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Untitled
Abstract: No abstract text available
Text: F214 Rev 21MAY14 UEC5–019–01–L–D–RA–1–A UCC8–010–01–G–S–RTH–A–TR UEC5, UCC8 SERIES RUGGED MICRO FLYOVER SOCKET SYSTEM Mates with: ECUE, ECUO UEC5 NO. OF POSITIONS PLATING OPTION 01 D WELD TAB RA A SPECIFICATIONS For complete specifications and
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21MAY14)
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Untitled
Abstract: No abstract text available
Text: F-214 Rev 21MAY14 ERM8–013–05.0–S–DV–DS–L–TR ERM8–030–02.0–S–DV–TR ERM8–060–05.0–L–DV–TR (0,80 mm) .0315" ERM8 SERIES RUGGED HIGH SPEED HEADER SPECIFICATIONS Board Mates: ERF8 For complete specifications and recommended PCB layouts see
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F-214
21MAY14)
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Untitled
Abstract: No abstract text available
Text: VS-6ESH06-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 6 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • For PFC, CRM/CCM, snubber operation K Anode 1
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VS-6ESH06-M3
J-STD-020,
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: TB9414VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm
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TB9414VA
TB9414VA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-4CSH02-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 2 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • Specific for output and snubber operation
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PDF
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VS-4CSH02-M3
J-STD-020,
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-6CSH02HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 3 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K K Anode 1 Cathode Anode 2 • Specified for output and snubber operation
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Original
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PDF
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VS-6CSH02HM3
J-STD-020,
O-277A
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-6CSH02-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 3 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • Specified for output and snubber operation
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Original
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PDF
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VS-6CSH02-M3
J-STD-020,
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: VS-6ESH06-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 6 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • For PFC, CRM/CCM, snubber operation K Anode 1
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Original
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PDF
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VS-6ESH06-M3
J-STD-020,
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: T1090P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.53 x 0.53 x 0.185 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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T1090P
T1090P
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-6CSH01-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 3 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • Specified for output and snubber operation
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Original
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PDF
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VS-6CSH01-M3
J-STD-020,
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-4ESH02HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 4 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • Specified for output and snubber operation 1
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Original
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PDF
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VS-4ESH02HM3
J-STD-020,
O-277A
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: T1070P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.22 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.25
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T1070P
T1070P
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: T8914VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 885 nm
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T8914VA
T8914VA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-8CSH02HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 4 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K K Anode 1 Cathode Anode 2 • Specified for output and snubber operation
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Original
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PDF
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VS-8CSH02HM3
J-STD-020,
O-277A
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: VS-4CSH01-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 2 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • Specified for output and snubber operation
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Original
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PDF
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VS-4CSH01-M3
J-STD-020,
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: VS-4ESH01-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 4 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • Specified for output and snubber operation 1
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Original
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PDF
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VS-4ESH01-M3
J-STD-020,
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-112CNQ030APbF Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier New Generation 3, D-61 Package, 2 x 55 A FEATURES VS-112CNQ030APbF Base common cathode • 150 °C TJ operation Available • Center tap module • Very low forward voltage drop
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VS-112CNQ030APbF
VS-112CNQ030APbF
D-61-8
VS-112CNQ030ASMPbF
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-6ESH01HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 6 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • Specified for output and snubber operation 1
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Original
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PDF
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VS-6ESH01HM3
J-STD-020,
O-277A
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: T163VU www.vishay.com Vishay Semiconductors Infrared Emitting Diode Chip, 950 nm, GaAs FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.265 • Peak wavelength: λp = 950 nm • High reliability
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T163VU
T163VU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: T1116P www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Radiant sensitive area (in mm2): 7.7 • High photo sensitivity A • High radiant sensitivity
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T1116P
T1116P
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: T8719VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.47 x 0.47 x 0.16 • Peak wavelength: λ = 870 nm
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T8719VA
T8719VA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: VS-6ESH01HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 6 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • Specified for output and snubber operation 1
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Original
|
PDF
|
VS-6ESH01HM3
J-STD-020,
O-277A
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: VS-10CSH01-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 5 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • Specified for output and snubber operation
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Original
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PDF
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VS-10CSH01-M3
J-STD-020,
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|