pcb warpage in ipc standard

Abstract: JEDEC J-STD-033A J-STD-033A LGA rework JSTD033A reflow profile FOR LGA COMPONENTS AN1028 8015 j AN-1028 AN-1029
Contextual Info: Application Note AN-1028 Recommended Design, Integration and Rework Guidelines for International Rectifier’s BGA and LGA Packages by Kevin Hu, International Rectifier Table of Contents Page Introduction .1

H01N45A

Contextual Info: HI-SINCERITY Spec. No. : MOS200408 Issued Date : 2004.11.01 Revised Date : 2005.03.10 Page No. : 1/4 MICROELECTRONICS CORP. H01N45A H01N45A Pin Assignment 3-Lead Plastic TO-92 Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: Source N-Channel Power Field Effect Transistor

Contextual Info: SMD MOLDED WOUND CHIP INDUCTORS AISM-1210 Pb RoHS/RoHS II Compliant 3.2 x 2.5 x 2.2mm FEATURES: • High current rating coupled with high Q • Exceptionally reliable over wide operating temperature and under humid environment • Resilient to mechanical shocks

1N5819

Abstract: BM34063 BM34063HP BM34063HS
Contextual Info: BM34063 DC-DC CONVERTER Features Description z z z z z z z z The BM34063 Series is a monolithic control circuit containing the primary functions required for DC-to-DC converters. These devices consist of an internal temperature compensated reference, comparator,

mosfet y1

Abstract: MOSFET MARK y2 mosfet k 61 y1 TL 434 H3055LJ Y2 MARKING
Contextual Info: HI-SINCERITY Spec. No. : MOS200606 Issued Date : 2006.03.01 Revised Date : 2006.05.04 Page No. : 1/4 MICROELECTRONICS CORP. H3055LJ H3055LJ Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Enhancement-Mode MOSFET 20V, 13A

03n60

Abstract: H03N60 H03N60E H03N60F transistor 100A 3N60
Contextual Info: HI-SINCERITY Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H03N60 Series H03N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate

AX78L05

Abstract: FE0004 AX78LXX C3745 c3641 SOT-89 code BA
Contextual Info: Page No. : 1/10 AX78LXXAM/BM AX78LXXAA/BA AX78LXX Series Pin Assignment 3-Terminal Positive Voltage Regulators 1 2 3-Lead Plastic SOT-89 Package Code: M Pin 1: VOUT Pin 2: GND Pin 3: VIN 3 Description 3-Lead Plastic TO-92 Package Code: A Pin 1: VOUT Pin 2: GND

TL 188 TRANSISTOR PNP

Abstract: HTIP117D
Contextual Info: HI-SINCERITY Spec. No. : HD200204 Issued Date : 2002.04.01 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HTIP117D PNP EPITAXIAL PLANAR TRANSISTOR Description TO-126ML The HTIP117D is designed for use in general purpose amplifier and low-speed

h78l05

Abstract: C4149 H78LXXAM H78L12 Marking BA SOT89 TL 873 H78LXX H78LXXAA h78L0 C3745
Contextual Info: HI-SINCERITY Spec. No. : IC200403 Issued Date : 2004.03.01 Revised Date : 2004.08.31 Page No. : 1/10 MICROELECTRONICS CORP. H78LXXAM / BM H78LXXAA / BA H78LXX Series Pin Assignment 3-TERMINAL POSITIVE VOLTAGE REGULATORS 1 2 3-Lead Plastic SOT-89 Package Code: M

E13009a

Abstract: 13009a HMJE13009A 13009a TRANSISTOR mje13009a transistor 13009a
Contextual Info: HI-SINCERITY Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2006.07.04 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009A 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009A is designed for high-voltage, high-speed power switching

transistor h2a

Abstract: HLB121A H2A transistor VCB-55 HA2001
Contextual Info: HI-SINCERITY Spec. No. : HA200112 Issued Date : 2001.04.01 Revised Date : 2005.02.05 Page No. : 1/4 MICROELECTRONICS CORP. HLB121A NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121A is a medium power transistor designed for use in switching

Contextual Info: HIGH CURRENT SHIELDED POWER INDUCTOR ASPI-7318 MSL level: 2 This product is packed with dry packaging FEATURES: • 100%lead (Pb) free. • Lowest DCR/uH, in this package size. • Frequency range up to 5.0MHz • Handles high transient current spikes without saturation

ASPI-7318-1R5

Abstract: 7318
Contextual Info: HIGH CURRENT SHIELDED POWER INDUCTOR ASPI-7318 MSL level: 2 This product is packed with dry packaging FEATURES: • 100%lead (Pb) free. • Lowest DCR/uH, in this package size. • Frequency range up to 5.0MHz • Handles high transient current spikes without saturation

wi-fi transmitter block diagram

Abstract: wifi RECEIVER CIRCUIT DIAGRAM wifi transceiver 802.11n sensitivity dbm Broadcom SN8200 SN8200EVK sychip Murata SN8200 Broadcom 802.11 application note wifi mac transmitter
Contextual Info: SN8200 Wi-Fi Network Controller Module User Manual And Datasheet Version: 1.1 January 23, 2013 Note: SyChip, LLC. reserves the right to make changes in specifications at any time and without notice. The information furnished in this data sheet is believed to be accurate and reliable. However, no responsibility is assumed

AX358

Abstract: AX358P AX358S 1N914
Contextual Info: Page No. : 1/7 AX358P / AX358S Low Power Dual Operational Amplifiers 8-Lead Plastic DIP-8 Package Code: P Description These devices consist of two independent, high gain, internally frequencycompensated operational amplifiers designed operate from a single supply over a

HX8340B

Abstract: HX8340-B mx 362-0
Contextual Info: DATA SHEET DOC No. HX8340-B(N -DS ) HX8340-B(N) 176RGB x 220 dot, 262k color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 October, 2007 HX8340-B(N) 176RGB x 220 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver

Contextual Info: LE AVAILAB MG3500/MG2580 HD H.264 CODEC DATA SHEET Advance Information July 23, 2010 Document Release 1.4 Document Number: PN1100 Functional Diagrams Pin Configurations appear at end of data sheet. Functional Diagrams continued at end of data sheet. UCSP is a trademark of Maxim Integrated Products, Inc.

HLB123

Abstract: HLB123SA IC DATE CODE ha2006
Contextual Info: HI-SINCERITY Spec. No. : HA200601 Issued Date : 2006.12.01 Revised Date : 2009.04,02 Page No. : 1/5 MICROELECTRONICS CORP. HLB123SA NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls

HTIP42C

Contextual Info: HI-SINCERITY Spec. No. : HE6733 Issued Date : 1994.08.10 Revised Date : 2004.11.19 Page No. : 1/4 MICROELECTRONICS CORP. HTIP42C PNP EPITAXIAL PLANAR TRANSISTOR Description The HTIP42C is designed for use in general purpose amplifier and switching applications.

H3842

Abstract: Datasheet of ic ne555 NE555 PWM 500khz H3842P transistor 2N3905 DATASHEET Transistor BC109 equivalent H3842 2N3903 2N3905 H3842S
Contextual Info: HI-SINCERITY Spec. No. : IC200408 Issued Date : 2004.04.01 Revised Date : 2004.04.28 Page No. : 1/12 MICROELECTRONICS CORP. H3842P / H3842S HIGH PERFORMANCE CURRENT MODE PWM CONTROLERS 8-Lead Plastic DIP-8 Package Code: P Description The H3842 Series is high performance fixed frequency current mode controllers.

HMBT4403

Contextual Info: HI-SINCERITY Spec. No. : HE6818 Issued Date : 1993.06.30 Revised Date : 2004.08.30 Page No. : 1/5 MICROELECTRONICS CORP. HMBT4403 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT4403 is designed for general purpose applications requiring high breakdown voltages.

HE8051S

Abstract: HE8551S
Contextual Info: HI-SINCERITY Spec. No. : HE6119 Issued Date : 1992.11.25 Revised Date : 2004.07.26 Page No. : 1/5 MICROELECTRONICS CORP. HE8551S PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8551S is designed for general purpose amplifier applications. Features • High DC Current gain: 100-400 at IC=150mA

HJ41C

Abstract: Y2 MARKING marking Y1 transistor
Contextual Info: HI-SINCERITY Spec. No. : HE6010 Issued Date : 1996.02.14 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ41C NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ41C is designed for use in general purpose amplifier and switching applications.

OC 140 germanium transistor

Abstract: HSD879 Germanium Transistor transistor h2a
Contextual Info: HI-SINCERITY Spec. No. : HA200207 Issued Date : 1996.07.15 Revised Date : 2005.02.15 Page No. : 1/4 MICROELECTRONICS CORP. HSD879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V and 3v electronic flash use. TO-92 Features • Charger-up time is about 1 ms faster than of a germanium transistor