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    HE8051S Search Results

    HE8051S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HE8051S Hi-Sincerity Mocroelectronics NPN EPITAXIAL PLANAR TRANSISTOR Original PDF

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    HE8051S

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6111 Issued Date : 1992.09.30 Revised Date : 2004.07.26 Page No. : 1/5 MICROELECTRONICS CORP. HE8051S NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8051S is designed for general purpose amplifier applications. TO-92 Absolute Maximum Ratings


    Original     		PDF HE6111 HE8051S HE8051S 183oC 217oC 260oC

    HE8051S

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6111 Issued Date : 1992.09.30 Revised Date : 2002.03.06 Page No. : 1/4 MICROELECTRONICS CORP. HE8051S NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8051S is designed for general purpose amplifier applications. Absolute Maximum Ratings


    Original     		PDF HE6111 HE8051S HE8051S

    HE8051S

    Abstract: HE8551S
    Text: HI-SINCERITY Spec. No. : HE6119 Issued Date : 1992.11.25 Revised Date : 2004.07.26 Page No. : 1/5 MICROELECTRONICS CORP. HE8551S PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8551S is designed for general purpose amplifier applications. Features • High DC Current gain: 100-400 at IC=150mA


    Original     		PDF HE6119 HE8551S HE8551S 150mA HE8051S 183oC 217oC 260oC HE8051S

    HE8051S

    Abstract: HE8551S
    Text: HI-SINCERITY Spec. No. : HE6119 Issued Date : 1992.11.25 Revised Date : 2001.07.19 Page No. : 1/4 MICROELECTRONICS CORP. HE8551S PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8551S is designed for general purpose amplifier applications. Features • High DC Current gain: 100-400 at IC=150mA


    Original     		PDF HE6119 HE8551S HE8551S 150mA HE8051S HE8051S