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    2116 STATIC RAM Search Results

    2116 STATIC RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A/BVA Rochester Electronics LLC STATIC RAM; 1K X 4 Visit Rochester Electronics LLC Buy
    CDP1824CD/B Rochester Electronics LLC CDP1824C - 32-Word x 8-Bit Static RAM Visit Rochester Electronics LLC Buy
    CY7C09389V-9AXI Rochester Electronics CY7C09389 - 3.3 V 64 K X 18 Synchronous Dual-Port Static RAM, Industrial Temp Visit Rochester Electronics Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation

    2116 STATIC RAM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CS91

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20208-1E Semicustom CMOS Standard cell array CS91 Series • DESCRIPTION The CS91 series 0.11 µm CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 48 million gates which have a gate delay time of 16


    Original     		DS06-20208-1E F0207 CS91 PDF

    FSS101

    Abstract: S101 s101 marking marking S101 m6598
    Text: Ordering number:ENN5984A P-Channel Silicon MOSFET FSS101 Load S/W Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2116 [FSS101] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27 0.43


    Original     		ENN5984A FSS101 FSS101] FSS101 S101 s101 marking marking S101 m6598 PDF

    5885

    Abstract: FSS202 ta2128
    Text: Ordering number:EN5885A N-Channel Silicon MOSFET FSS202 DC-DC Converter Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2116 [FSS202] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27 0.43 0.1 1.5 5.0 1:Source 2:Source


    Original     		EN5885A FSS202 FSS202] 1200mm. 5885 FSS202 ta2128 PDF

    marking S132

    Abstract: FSS132 S132 TA2720
    Text: Ordering number:ENN6398 P-Channel Silicon MOSFET FSS132 Load Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [FSS132] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27


    Original     		ENN6398 FSS132 FSS132] marking S132 FSS132 S132 TA2720 PDF

    FSS133

    Abstract: S133
    Text: Ordering number : ENN6919 FSS133 P-Channel Silicon MOSFET FSS133 _ Load Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2116 [FSS133] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications


    Original     		ENN6919 FSS133 FSS133] FSS133 S133 PDF

    CS91 Series

    Abstract: CS91 fujitsu inverter air F0609
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20208-3E Semicustom CMOS Standard cell array CS91 Series • DESCRIPTION The CS91 series 0.11 µm CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 48 million gates which have a gate delay time of 16


    Original     		DS06-20208-3E F0609 CS91 Series CS91 fujitsu inverter air F0609 PDF

    M2026

    Abstract: VGS-50-5 DS2-DC ta2129 FSS206 EN5886A
    Text: Ordering number:EN5886A N-Channel Silicon MOSFET FSS206 DC-DC Converter Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2116 [FSS206] 5 4 0.595 1.27 0.43 0.1 1.5 5.0 1:Source 2:Source 3:Source 4:Gate 5:Drain 6:Drain 7:Drain


    Original     		EN5886A FSS206 FSS206] 1000mm2 M2026 VGS-50-5 DS2-DC ta2129 FSS206 EN5886A PDF

    FSS238

    Abstract: S238 PG2520
    Text: Ordering number:ENN6401 N-Channel Silicon MOSFET FSS238 Load Switching Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2116 [FSS238] 5 4 0.595 Specifications 1.27 0.43 0.1 1.5 5.0 1 : Source 2 : Source 3 : Source 4 : Gate


    Original     		ENN6401 FSS238 FSS238] FSS238 S238 PG2520 PDF

    NMC2116-25L

    Abstract: A7105 NMC2116-20 NMC2116N-25L NMC2116 nmc2116n-25 24 PIN EPROM
    Text: fit March 1982 003580 S 3500 PRELIMINARY ^ NMC21TD ZU4Ö X ö Static RAM M ax A c c e s s /C u rre n t NM C 2116-20L NM C 2116-25L NMC2116-20 2 00 250 2 00 A c tiv e C u rre n t IC C — m A 70 70 100 S ta n d b y C u rre n t (IS B — m A ) 10 10 15 A c c e s s (T A V Q V — ns)


    OCR Scan     		NMC21TD NMC2116-20L NMC2116-25L NMC2116-20 NMC2116J-20, NMC2116J-20L NMC2116J-25L NMC2116N-20, NMC2116N-20L NMC2116N-25L A7105 NMC2116-20 NMC2116 nmc2116n-25 24 PIN EPROM PDF

    Untitled

    Abstract: No abstract text available
    Text: ato M a rc h 1982 0035 80 PRELIMINARY S 3500 NMC21TD zu4ö X ö Static RAM M a x A c ce ss/C u rren t N M C 2 1 1 6 -2 0 L N M C 2 1 1 6 -2 5 L N M C 2116-20 200 250 200 A c tiv e C u rre n t IC C — m A 70 70 100 S ta n d b y C u rre n t (IS B — m A)


    OCR Scan     		NMC2116 NMC21TD NMC2116J-20, NMC2116J-20L NMC2116J-25L C2116N-20, NMC2116N-20L C2116N-25L PDF

    RCA 2116

    Abstract: No abstract text available
    Text: NOW / GE/RCA Products PART OF THE ^NEW H A R R IS S E M IC O N D U C T O R h a r r i^ 1 18 A 1 - 2 t 7 - A 6 < o o A O - CMM5104/3, CMM 5104/3Z High-Reliability, Radiation-Hardened CMOS/SOS 4096-Word by 1-Bit LSI Static RAM T 2J A2 - 3


    OCR Scan     		CMM5104/3, 5104/3Z 4096-Word RCA 2116 PDF

    Untitled

    Abstract: No abstract text available
    Text: JB i MITSUBISHI LS Is ^ M 5 M 5 2 5 7 B P , J - 15 ,-17 ,-2 0 ,-2 5 , -2 0 L,- 2 5 L 262144-BIT 262144-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION The M5M5257B is a family of 262144-word by 1-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated with the high-performance CMOS silicongate


    OCR Scan     		262144-BIT 262144-WORD M5M5257B 300mW M5M5257BP PDF

    Intel mcs-40

    Abstract: intel 1101 2116 ram 5101 RAM transistor equivalenti Bipolar PROM programming Creative IC CT 1975 intel 3601 1702a eprom MCS-40
    Text: PRIC E 15 00 memory design handbook m in ia i O k p a r » lio n 1 0 7 7 INTRODUCTION The Intel Memory Design Handbook contains information on the use of Intel’s memory components and support circuits in system application. It is intended to aid the system designer to gain a thorough


    OCR Scan     		S-10380 CH-8021 /C-160/0577/50K Intel mcs-40 intel 1101 2116 ram 5101 RAM transistor equivalenti Bipolar PROM programming Creative IC CT 1975 intel 3601 1702a eprom MCS-40 PDF

    STATIC RAM 2114

    Abstract: RAM 2114 2114 static ram ic EDI8M32512CA RAM 2116
    Text: EDI8M32512CA ^EtECTBOMC E D L DEStGNS WC. m 512Kx32 Static Ram 512Kx32 CMOS, High Speed Static RAM Features The EDI8M32512CA, a high speed, high performance, 16 512Kx32 bit CMOS Static megabit density Static RAM organized as 512Kx32 bits, contains four 512Kx8 SRAMs.


    OCR Scan     		EDI8M32512CA 512Kx32 EDI8M32512CA, 512Kx8 EDI8M32512LPA20GB EDI8M32512LPA20GI 10x100= STATIC RAM 2114 RAM 2114 2114 static ram ic EDI8M32512CA RAM 2116 PDF

    LP30-250

    Abstract: h8 ss 125 transistor P82 transistor timer network
    Text: Section 21 Electrical Specifications 21.1 Absolute Maximum Ratings Table 21-1 lists the absolute maximum ratings, liable 21-1 Absolute M aximum Ratings Item Symbol Rating Unit Supply voltage v cc -0 .3 to + 7.0 V Programming voltage Vpp -0 .3 t o +14.0 V Input voltage at ports not


    OCR Scan     		H8/350 CG-84 CP-84 FP-80A T-90-20 LP30-250 h8 ss 125 transistor P82 transistor timer network PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C168A CY7C169A CYPRESS 4K x 4 Static RAM specified on the address pins Ao through Features Functional D escription • Automatic power-down when dese­ lected (CY7C168A The CY7C168A and CY7C169A are highperform ance CM OS static RAM s orga­ nized as 4096 by 4 bits. Easy memory ex­


    OCR Scan     		CY7C168A) CY7C169A) CY7C168A CY7C169A 7C169A --25PC PDF

    TI33

    Abstract: No abstract text available
    Text: PERFORMANCE SEMICONDUCTOR EOE D • TObBST? D Q 0 0 ti33 1 P4C1257/P4C1257L ULTRA HIGH SPEED 256K x 1 STATIC CMOS RAMS SCRAMS A -FEATURES High Speed (Equal Access and Cycle Times) - 20/25/30/35 ns (Commercial)


    OCR Scan     		P4C1257/P4C1257L P4C1257 P4C1257L 1502B P4C1257/L -20PC -20JC -20CC -20LC -25PC TI33 PDF

    sram 2112

    Abstract: 2114 static ram STATIC RAM 2114
    Text: S-22S10R/I 64-word X4-bit parallel NON-VOLATILE RAM The S-22S10R/I is a non-volatile CM OS RAM, co m p o se d of a CM OS static RAM and a non-volatile e le ctrically erasable p ro gram m ab le m em ory E2PROM to backup the SRAM. The organization is 64-w ord x 4-bit (total 256 bits) and the


    OCR Scan     		S-22S10R/I 64-word S-22S10R/I X2210 D01fifi4 sram 2112 2114 static ram STATIC RAM 2114 PDF

    Untitled

    Abstract: No abstract text available
    Text: ìf CY7C168A CY7C169A CYPRESS 4K x 4 Static RAM Features Functional Description • Automatic power-down when dese­ lected CY7C168A T he CY7C168A and CY7C169A are highperform ance CM O S static RA M s orga­ nized as 4096 by 4 bits. Easy m em ory ex­ pansion isprovidedby an active LO W chip


    OCR Scan     		CY7C168A CY7C169A 7C169A--35PC 7C169A--35VC CY7C168Aonly. 00095--D PDF

    1502B

    Abstract: cmos dynamic ram 256kx1 p4c1257
    Text: PERFORMANCE SEMICONDUCT OR 20E D TObBST? DQD0t,33 T P4C1257/P4C1257L ULTRA HIGH SPEED 256K x 1 STATIC CMOS RAMS SCRAMS FEATURES • High Speed (Equal Access and Cycle Times) - 20/25/30/35 ns (Commercial) - 25/30/35/45/55 ns (Military) Data Retention with 2.0V Supply


    OCR Scan     		D000t P4C1257/P4C1257L P4C1257 P4C1257L P4C1257 P4C1257L 144-bit 256Kx1. P4C1257/L -20PC 1502B cmos dynamic ram 256kx1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Issue 1.0: August 1989 MDM4256T/V/J-1Q/12/15 256K MDM4256T/V/J X 4 M o n o l i t h i c C M O S D RA M ADVANCE PRODUCT INFORMATION 262,144 x 4 CMOS High Speed Dynamic RAM ^ • Pin Definition Package Type: T .'V '.'J' Features Row Access Times of 100/120/150 nS


    OCR Scan     		MDM4256T/V/J-1Q/12/15 MDM4256T/V/J 300mil MDM4256JI-10 MIL-883B 20Pin PDF

    MN 2114 static ram

    Abstract: a12t 2116 static ram LA12T
    Text: LOGIC DEVICES INC BhE D • S S b S T Q S OOOlOafi M ■ _ 8K x 8 Static RAM with Flash Clear Low FEATURES; L7C186/L7CL186 power O iS G R IP T lO N □ 8K x 8 CMOS Static RAM with High Speed Flash Clear □ Auto-Powerdown Design


    OCR Scan     		L7CI86) L7CL186) 1DT7165 28-pin 32-pin L7C186/L7CL186 MN 2114 static ram a12t 2116 static ram LA12T PDF

    3004x

    Abstract: Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79
    Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j / 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS AKTIENÖESELLSCHAF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for


    OCR Scan     		fl23SbOS 0G04737 BFX55 Q60206-X55 fl235bOS 3004x Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79 PDF

    3004x

    Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
    Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for


    OCR Scan     		fl23SbOS 0G04737 Q60206-X55 BFX55 23SbOS 150mA 3004x SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M PDF