IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
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100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
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AO4618
Abstract: No abstract text available
Text: AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4618
AO4618
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Untitled
Abstract: No abstract text available
Text: AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4618
AO4618
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Untitled
Abstract: No abstract text available
Text: AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4618
AO4618
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Untitled
Abstract: No abstract text available
Text: DMHC4035LSD 40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Device RDS ON max ID max TA = +25°C • 2 x N + 2 x P channels in a SOIC package • Low On-Resistance 45mΩ @ VGS = 10V 4.5A • Low Input Capacitance 4A • Fast Switching Speed
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DMHC4035LSD
AEC-Q101
DS36287
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AO4629
Abstract: No abstract text available
Text: AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4629
AO4629
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AO4629
Abstract: a4751 20V P-Channel Power MOSFET 500A
Text: AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4629
AO4629
a4751
20V P-Channel Power MOSFET 500A
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Untitled
Abstract: No abstract text available
Text: AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4629
AO4629
noted29
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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AO4629L
Abstract: No abstract text available
Text: AO4629L Complementary Enhancement Mode Field Effect Transistor General Description Product Summary AO4629L uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4629L
AO4629L
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schematic diagram 230VAC to 24VDC POWER SUPPLY
Abstract: 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P
Text: farnell.com element14.com 2501 Relays & Solenoids Page 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . . High Frequency Relays . . . . . . . . . . . . . . . . . . . . . Interface Relays . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element14
schematic diagram 230VAC to 24VDC POWER SUPPLY
48V 30A SPDT RELAY
IM03D
PCH-124
N mosfet 250v 600A
VARISTOR 275 L20
PA66 - GF 25 relay
marking code W16 SMD Transistor
90W 19.5V Power Adapter pcb
G6CU-2117P
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reverse-conducting thyristor
Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
Text: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate
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MCT00,
reverse-conducting thyristor
gto Gate Drive circuit
IGCT thyristor
IGCT mitsubishi
Usha Rectifier
Emitter Turn-Off thyristor
eto thyristor
GTO triac
HEXFET Power MOSFET designer manual
MOS-Controlled Thyristor
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Untitled
Abstract: No abstract text available
Text: DMN3016LFDE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C 12mΩ @ VGS = 10V 10A 16mΩ @ VGS = 4.5V 8.5A V(BR)DSS NEW PRODUCT ADVANCE INFORMATION Features and Benefits 30V • 0.6mm profile – ideal for low profile applications
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DMN3016LFDE
AEC-Q101
DS35900
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Untitled
Abstract: No abstract text available
Text: DMG7430LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits • Low RDS ON – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products 10.5A • Occupies just 33% of the board area occupied by SO-8 enabling
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DMG7430LFG
AEC-Q101
DS35497
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Abstract: No abstract text available
Text: DMN3016LK3 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADVANCED INFORMATION NEW PRODUCT 30V Features RDS(on) ID • 100% Unclamped Inductive Switch (UIS) Test In Production TA = +25°C • Low On-Resistance • Fast Switching Speed • Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2)
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DMN3016LK3
DS37206
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Untitled
Abstract: No abstract text available
Text: AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4616
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AO4616
Abstract: 20V P-Channel Power MOSFET 500A
Text: AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4616
AO4616
20V P-Channel Power MOSFET 500A
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C3025LS
Abstract: marking p1S marking c3025LS DS3582 DMHC3025LSD-13
Text: DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max ID max TA = 25°C 25mΩ @ VGS = 10V 6.0 40mΩ @ VGS = 4.5V 4.6 50mΩ @ VGS = -10V -4.2 80mΩ @ VGS = -4.5V -3.2 • • •
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DMHC3025LSD
AEC-Q101
DS35821
C3025LS
marking p1S
marking c3025LS
DS3582
DMHC3025LSD-13
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C3025LS
Abstract: diode n1s
Text: DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max ID max TA = 25°C 25mΩ @ VGS = 10V 6.0 40mΩ @ VGS = 4.5V 4.6 50mΩ @ VGS = -10V -4.2 80mΩ @ VGS = -4.5V -3.2 • • •
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DMHC3025LSD
AEC-Q101
DS35821
C3025LS
diode n1s
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C3025LS
Abstract: No abstract text available
Text: DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max ID max TA = +25°C 25mΩ @ VGS = 10V 6.0 40mΩ @ VGS = 4.5V 4.6 50mΩ @ VGS = -10V -4.2 80mΩ @ VGS = -4.5V -3.2 •
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DMHC3025LSD
AEC-Q101
DS35821
C3025LS
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DS3205
Abstract: No abstract text available
Text: DMG8880LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)
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DMG8880LK3
AEC-Q101
O252-3L
J-STD-020
O252-3L
DMG8880LK3-13
DS32052
DS3205
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Untitled
Abstract: No abstract text available
Text: DMG8880LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)
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DMG8880LK3
AEC-Q101
O252-3L
J-STD-020
DS32052
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schematic diagram UPS ica
Abstract: power mosfet 9505 sim welding diagram schematic diagram 24v UPS ic 4410 8pin inverter lg ig drive schematic diagram UPS ica ce 1200 full bridge igbt induction heating generator ups high power FET Transistor ic driver mosfet 8 pin 4413
Text: iUIXYS IX B D 4410 1XBD4411 IXBD4412 1XBD4413 ISOSMART HALF BRIDGE DRIVER CHIPSET* Features 1 2 0 0 V o r G r e a t e r L o w -to H ig h -S id e Is o latio n . 20ns D riv e s P o w e r S y s t e m s O p e r a tin g O n U p to 5 7 5 V A C S w itc h in g T im e w ith 1 0 ,0 0 0 p F L o a d .
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1XBD4411
IXBD4412
1XBD4413
100pF
100ns
IXBD4413
470QpF
schematic diagram UPS ica
power mosfet 9505
sim welding diagram
schematic diagram 24v UPS
ic 4410 8pin
inverter lg ig drive
schematic diagram UPS ica ce 1200
full bridge igbt induction heating generator
ups high power FET Transistor
ic driver mosfet 8 pin 4413
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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