2am smd transistor
Abstract: transistor smd 4z HALL SENSOR A 22L 78Mos EL 14v 4c 78 MOS GENERAL SEMICONDUCTOR MARKING mJ SMA ED smd transistor marking 12W TRANSISTOR SMD MARKING CODE 1P TRANSISTOR SMD MARK CODE 7a
Text: High-side Power Switch with Diagnostic Function SI-5155S External Dimensions unit: mm ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels
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SI-5155S
O-220
Rati03S
SPX-62S
SI-3011S
SPX-G32S
SI-3101S
SPZ-G36
SI-3102S
SSB-14
2am smd transistor
transistor smd 4z
HALL SENSOR A 22L
78Mos
EL 14v 4c
78 MOS
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
smd transistor marking 12W
TRANSISTOR SMD MARKING CODE 1P
TRANSISTOR SMD MARK CODE 7a
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block diagram of schottky diode
Abstract: EDZ TE61 27B H 48 zener diode 2a 200v schottky diode DC DC converter 5v to 400V 10W zener diode Bidirectional Zener Diode Glass 15v Schottky rectifier 3A EDZ te61 15B 200v 3A schottky
Text: -Diodes Schottky Barrier Diodes RSX Series Surface Mount / Thin-profile Power Package PMDT Package 2616 Size / Two-pin Mini-mold Schottky PMDU Package Sub-miniature Zener Diodes 2 terminals / composite Zener Diodes USB2.0 Compatible / High Reliability Zener Diodes
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RR264M-400
RB491D
A/20V)
RSX101M-30
A/30V)
47P4871E
block diagram of schottky diode
EDZ TE61 27B
H 48 zener diode
2a 200v schottky diode
DC DC converter 5v to 400V
10W zener diode
Bidirectional Zener Diode Glass 15v
Schottky rectifier 3A
EDZ te61 15B
200v 3A schottky
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alternator rectifier diode 50a
Abstract: EL 14v 4c STA509A equivalent sta509a smd diode marking A05 CTB-34M HALL SENSOR A 22L GENERAL SEMICONDUCTOR MARKING mJ SMA ED TRANSISTOR SMD MARKING CODE 12w Zener diode smd marking code 22h
Text: Bulletin No C01EA0 Jun., 1999 DEVICES for AUTOMOTIVE CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein
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C01EA0
H1-C01EA0-9906015TA
alternator rectifier diode 50a
EL 14v 4c
STA509A equivalent
sta509a
smd diode marking A05
CTB-34M
HALL SENSOR A 22L
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
TRANSISTOR SMD MARKING CODE 12w
Zener diode smd marking code 22h
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Untitled
Abstract: No abstract text available
Text: FDD5N50U N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 3 A, 2.0 Features Description • RDS on = 1.65 (Typ.) @ VGS = 10 V, ID = 1.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDD5N50U
FDD5N50U
50nsec
200nsec
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LS4448W
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR LS4448W REVERSE VOLTAGE - 100 V POWER DISSIPATION - 400 mW SURFACE MOUNT FAST SWITCHING DIODE FEATURES 1206 For surface mounted application Silicon epitaxial planar diode High speed switching Ultra small surface mount package Low leakage current
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LS4448W
LS4448W
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LS4148W
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR LS4148W REVERSE VOLTAGE - 100 V POWER DISSIPATION - 400 mW SURFACE MOUNT FAST SWITCHING DIODE FEATURES 1206 For surface mounted application Silicon epitaxial planar diode High speed switching Ultra small surface mount package Low leakage current
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LS4148W
067mg
LS4148W
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diode l2 32 diode
Abstract: STGD6NC60HD
Text: STGD6NC60HD N-channel 600V - 7A - DPAK Very fast PowerMESH IGBT General features • ■ Type VCES VCE sat Max @25°C IC @100°C STGD6NC60HD 600V <2.5V 7A Low on voltage drop (Vcesat) 3 1 Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode
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STGD6NC60HD
diode l2 32 diode
STGD6NC60HD
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GD6NC60HD
Abstract: JESD97 STGD6NC60HD STGD6NC60HDT4
Text: STGD6NC60HD N-channel 600V - 7A - DPAK Very fast PowerMESH IGBT General features • ■ Type VCES VCE sat Max @25°C IC @100°C STGD6NC60HD 600V <2.5V 7A Low on voltage drop (Vcesat) 3 1 Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode
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STGD6NC60HD
GD6NC60HD
JESD97
STGD6NC60HD
STGD6NC60HDT4
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Untitled
Abstract: No abstract text available
Text: AP4569GD Pb Free Plating Product Advanced Power Electronics Corp. MODE POWER MOSFET D2 Low Gate Charge Fast Switching Speed N AND P-CHANNEL ENHANCEMENT N-CH BVDSS D2 D1 40V RDS ON D1 52m ID PDIP-8 Package RoHS Compliant P-CH BVDSS G2 S2 PDIP-8 4.8A
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AP4569GD
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AP4569GD
Abstract: N- and P-Channel 30-V D-S MOSFET
Text: AP4569GD Pb Free Plating Product Advanced Power Electronics Corp. MODE POWER MOSFET D2 ▼ Low Gate Charge ▼ Fast Switching Speed N AND P-CHANNEL ENHANCEMENT N-CH BVDSS D2 D1 40V RDS ON D1 ▼ PDIP-8 Package 52mΩ ID ▼ RoHS Compliant P-CH BVDSS G2 S2
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AP4569GD
AP4569GD
N- and P-Channel 30-V D-S MOSFET
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Mosfet
Abstract: SSF2301 2301 marking sot-23
Text: SSF2301 20V P-Channel MOSFET Main Product Characteristics D VDSS -20V RDS on 60mΩ (typ.) ID -3A G S ① SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and
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SSF2301
OT-23
reliabSSF2301
Mosfet
SSF2301
2301 marking sot-23
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FDD5N50UTM
Abstract: FDD5N50U FDD5N50UTF
Text: TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
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FDD5N50U
FDD5N50U
FDD5N50UTM
FDD5N50UTF
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Untitled
Abstract: No abstract text available
Text: TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
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FDD5N50U
FDD5N50U
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Untitled
Abstract: No abstract text available
Text: PD - 96425 IRG7RC07SDPbF Optimized for line frequency, 50/60Hz switching frequency Features • Standard speed IGBT for switching frequency less than 1KHz • Very low VCE ON • Ultra fast soft recovery diode C VCES = 600V IC = 8.5A, TC = 100°C G VCE(on) typ. =1.2V@IC = 3A
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IRG7RC07SDPbF
50/60Hz
EIA-481
EIA-541.
EIA-481.
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bridge rectifier 24V AC to 24v dc
Abstract: 1N5408 smd diodes GSIB1560
Text: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4
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250ns;
DO-204AL
DO-41)
DO-220AA
V-540V;
V-440V
bridge rectifier 24V AC to 24v dc
1N5408 smd diodes
GSIB1560
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Untitled
Abstract: No abstract text available
Text: AP9452AGG-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge BVDSS D 20V RDS ON Capable of 2.5V Gate Drive Single Drive Requirement 50m ID G RoHS Compliant & Halogen-Free 4A S D Description Advanced Power MOSFETs from APEC provide the
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AP9452AGG-HF
OT-89
100ms
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M3331
Abstract: No abstract text available
Text: AP9452AGG-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Capable of 2.5V Gate Drive ▼ Single Drive Requirement BVDSS 20V RDS ON 50mΩ ID G ▼ RoHS Compliant & Halogen-Free 4A
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AP9452AGG-HF
OT-89
100us
100ms
M3331
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Untitled
Abstract: No abstract text available
Text: AP4523GD Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge N-CH BVDSS D2 D2 ▼ Fast Switching Speed 40V RDS ON D1 D1 ▼ PDIP-8 Package 40mΩ ID ▼ RoHS Compliant G2 S2 PDIP-8 P-CH BVDSS
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AP4523GD
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Untitled
Abstract: No abstract text available
Text: AP4523GD Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge N-CH BVDSS D2 D2 Fast Switching Speed 40V RDS ON D1 D1 40m ID PDIP-8 Package RoHS Compliant G2 S2 PDIP-8 P-CH BVDSS G1
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AP4523GD
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AP2851GO
Abstract: No abstract text available
Text: AP2851GO Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement S2 ▼ Low On-resistance D2 N-CH BVDSS G2 30V RDS ON S2 ▼ Fast Switching Performance S1 TSSOP-8 D1 S1 40mΩ ID G1
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AP2851GO
100ms
208oC/W
AP2851GO
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GB6NC60H
Abstract: JESD97 STGB6NC60H STGB6NC60HT4
Text: STGB6NC60H N-channel 600V - 7A - D2PAK Very fast PowerMESH IGBT General features Type VCES VCE sat max @25°C IC @100°C STGB6NC60H 600V <2.5V 7A • Low on voltage drop (Vcesat) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode
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STGB6NC60H
GB6NC60H
JESD97
STGB6NC60H
STGB6NC60HT4
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Untitled
Abstract: No abstract text available
Text: AP2851GO Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS Simple Drive Requirement S2 Low On-resistance D2 G2 30V RDS ON S2 Fast Switching Performance S1 TSSOP-8 D1 S1 40m ID G1 5A P-CH BVDSS
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AP2851GO
100ms
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AP9452G
Abstract: No abstract text available
Text: AP9452G Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower gate charge D ▼ Capable of 2.5V gate drive ▼ Single Drive Requirement BVDSS 20V RDS ON 50mΩ ID G 4A S Description D The Advanced Power MOSFETs from APEC provide the
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AP9452G
OT-89
100ms
100/W
AP9452G
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1RF7105
Abstract: 1RF710 irf7105 mosfet MOSFET C65 irf7105 ior 050a
Text: PD - 9.1097B International IOR Rectifier IRF7105 HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Dual N and P Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching 'P-CHANNEL MOSFET !
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OCR Scan
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1097B
IRF7105
1RF7105
1RF710
irf7105 mosfet
MOSFET C65
irf7105
ior 050a
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