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    20N60A Search Results

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    20N60A Price and Stock

    Micro Commercial Components MSJL20N60A-TP

    N-CHANNEL MOSFET,DFN8080A
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    DigiKey MSJL20N60A-TP Reel 3,000 3,000
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    MSJL20N60A-TP Cut Tape 2,950 1
    • 1 $4.48
    • 10 $2.962
    • 100 $4.48
    • 1000 $1.60774
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    Mouser Electronics MSJL20N60A-TP
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    IXYS Corporation IXGN320N60A3

    IGBT MOD 600V 320A 735W SOT227B
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    DigiKey IXGN320N60A3 Tube 1,752 1
    • 1 $30.36
    • 10 $29.864
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    Mouser Electronics IXGN320N60A3 102
    • 1 $43.18
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    TTI IXGN320N60A3 Tube 300
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    TME IXGN320N60A3 1
    • 1 $40.52
    • 10 $32.11
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    ComSIT USA IXGN320N60A3 134
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    New Advantage Corporation IXGN320N60A3 220 1
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    • 1000 $39.45
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    IXYS Corporation IXGX120N60A3

    IGBT 600V 200A 780W PLUS247
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    DigiKey IXGX120N60A3 Tube 300 300
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    Mouser Electronics IXGX120N60A3 16
    • 1 $26.1
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    TTI IXGX120N60A3 Tube 300 30
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    TME IXGX120N60A3 1
    • 1 $20.93
    • 10 $16.5
    • 100 $14.84
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    IXYS Corporation IXGM20N60A

    IGBT 600V 40A TO-204AE
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    onsemi HGTP20N60A4

    IGBT 600V 70A TO220-3
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    Avnet Americas HGTP20N60A4 Tube 4 Weeks 173
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    Rochester Electronics HGTP20N60A4 620 1
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    Find more 20N60A price and stock on Findchips.com

    20N60A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    20N60A4 Fairchild Semiconductor 600V, SMPS Series N-Channel IGBTsnull Original PDF

    20N60A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TA49372

    Abstract: 20N60A4 equivalent
    Text: 20N60A4S9A Data Sheet March 2006 600V, SMPS Series N-Channel IGBTs Features The 20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		PDF HGT1S20N60A4S9A HGT1S20N60A4S9A 150oC. 100kHz 200kHz 125oC TA49372 20N60A4 equivalent

    20n60a40

    Abstract: 20N60A 20N60 20N60A9 igbt 20n60
    Text: Not for new designs Low VCE sat IGBT High Speed IGBT IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF O-247 O-204 O-204AE 20N60 20N60A 20N60U1 20N60AU1 20n60a40 20N60A9 igbt 20n60

    IXGH20N60AU1

    Abstract: IXGH20N60U1 20N60AU1 *GH20N60AU1
    Text: Low VCE sat IGBT with Diode High speed IGBT with Diode VCES Combi Packs IXGH 20 N60U1 600 V IXGH 20 N60AU1 600 V Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 600 600 V V VGES VGEM Continuous Transient


    Original     		PDF N60U1 N60AU1 O-247 IXGH20N60U1 IXGH20N60AU1 IXGH20N60AU1 IXGH20N60U1 20N60AU1 *GH20N60AU1

    HGTG20N60A4D

    Abstract: No abstract text available
    Text: 20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		PDF HGTG20N60A4D HGTG20N60A4D 150oC. TA49339. TA49372.

    20N60A4

    Abstract: 20N60A4 equivalent IGBT 20n60a4 HGTG20N60A4 HGTP20N60A4 TA49372 20N60A mosfet 20a 300v HGTG20N60A4D LD26
    Text: 20N60A4, 20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The 20N60A4 and 20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		PDF HGTG20N60A4, HGTP20N60A4 HGTG20N60A4 HGTP20N60A4 150oC. 100kHz 200kHz 125oC 20N60A4 20N60A4 equivalent IGBT 20n60a4 TA49372 20N60A mosfet 20a 300v HGTG20N60A4D LD26

    20N60A4D

    Abstract: HGTG20N60A4D 20N60A4 TA49341 TA49339 TA49372 IFM110 LD26 TO247
    Text: 20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		PDF HGTG20N60A4D HGTG20N60A4D 150oC. TA49339. TA49372. 20N60A4D 20N60A4 TA49341 TA49339 TA49372 IFM110 LD26 TO247

    20N60A4

    Abstract: 20N60A4 equivalent TA49339
    Text: 20N60A4, 20N60A4 Data Sheet October 1999 File Number 600V, SMPS Series N-Channel IGBTs Features The 20N60A4 and 20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		PDF HGTG20N60A4, HGTP20N60A4 HGTG20N60A4 HGTP20N60A4 150oC. TA49339. 100kHz 20N60A4 20N60A4 equivalent TA49339

    20N60A4

    Abstract: 20N60A4 equivalent TA49339 IGBT 20n60a4 20N60A HGTG20N60A4 ICE 280 HGTG20N60A4D HGTP20N60A4 LD26
    Text: 20N60A4, 20N60A4 Data Sheet Title GT 0N6 4, GTP N60 bt 0V, MPS ries October 1999 600V, SMPS Series N-Channel IGBTs Features The 20N60A4 and 20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		PDF HGTG20N60A4, HGTP20N60A4 HGTG20N60A4 HGTP20N60A4 150oC. 100kHz 20N60A4 20N60A4 equivalent TA49339 IGBT 20n60a4 20N60A ICE 280 HGTG20N60A4D LD26

    20n60a4d

    Abstract: HGTG20N60A4D TA49372
    Text: 20N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG20N60A4D HGTG20N60A4D 150oC. TA49339. TA49372. 20n60a4d TA49372

    20N60A

    Abstract: D-68623 20N60U1 20N60AU
    Text: Not for new designs Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF N60U1 N60AU1 D-68623 20N60U1 20N60AU1 20N60A 20N60U1 20N60AU

    20N60A

    Abstract: f 20n60a N60A 20N60 20N60AU1 IXGH 20 N60A 30NC60 igbt 20n60
    Text: Low VCE sat IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 40 A IC90


    Original     		PDF 20N60 20N60A O-204AE 20N60 20N60A 20N60U1 20N60AU1 f 20n60a N60A IXGH 20 N60A 30NC60 igbt 20n60

    20N60AU1

    Abstract: ixgh 1500 IXGH20N60U1 ixgh20N60AU1
    Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 20 N60U1 IXGH 20 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF N60U1 N60AU1 20N60U1 20N60AU1 20N60AU1 ixgh 1500 IXGH20N60U1 ixgh20N60AU1

    20N60A4 equivalent

    Abstract: No abstract text available
    Text: 20N60A4 Data Sheet November 2013 File Number 600 V SMPS IGBT Features The 20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high


    Original     		PDF HGTG20N60A4 HGTG20N60A4 TA49339. O-247 20N60A4 equivalent

    Untitled

    Abstract: No abstract text available
    Text: 20N60A4S9A Data Sheet March 2006 600V, SMPS Series N-Channel IGBTs Features The 20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		PDF HGT1S20N60A4S9A HGT1S20N60A4S9A 150oC. 100kHz 200kHz 125oC

    20N60U1

    Abstract: 20N60AU1 N60AU1
    Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR


    Original     		PDF N60U1 N60AU1 20N60U1 20N60AU1 20N60U1 20N60AU1 N60AU1

    KYS 30 40 diode

    Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
    Text: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching


    OCR Scan     		PDF 30kHz 1560A 4bflb55b Q000S1S IXSH20N60 IXSM20N60 KYS 30 40 diode 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


    OCR Scan     		PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    ixgh 1500

    Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
    Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•


    OCR Scan     		PDF 10N60 20N60 31N60 30N60 38N60 40N60 60N60 32N60BS 40N60A ixgh 1500 25N120 200n60 60n60 igbt smd 10N60A 30N60A .25N100 20n60a

    30n60

    Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
    Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100


    OCR Scan     		PDF 00Q1737 20N60 O-247 30N60 40N60 25N100 45N100 45N120 20N60A 24N60A 30n60 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1

    20N60AU

    Abstract: 20N60A g20n60 N60A 20N60 30 N60A bt 151 600 20n60 G LT0B igbt 20n60
    Text: Not for new designs IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A Low VCE sat IGBT High Speed IGBT VC E S ^C25 Vy C E (sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Short Circuit SOA Capability §Symbol Test Conditions VCES Tj v v v Maximum Ratings = 25°C to 150°C 600 V


    OCR Scan     		PDF O-247 T0-204AE 20N60AU 20N60A g20n60 N60A 20N60 30 N60A bt 151 600 20n60 G LT0B igbt 20n60

    Untitled

    Abstract: No abstract text available
    Text: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62


    OCR Scan     		PDF 20N60 30N60 40N60 25N100 45N100 45N120 40N60AU1 35N100U1 55N100U1Â 52N60AU1Â

    Untitled

    Abstract: No abstract text available
    Text: Not for new designs Low V IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 Combi Packs v CES ^C25 VC E sat 600 V 600 V 40 A 40 A 2.5 V 3.0 V <?C G Short Circuit S O A Capability OE Symbol Test Conditions VCES ^ v CGR Maximum Ratings


    OCR Scan     		PDF N60U1 N60AU1 O-247 4hflb22b 20N60U1 20N60AU1

    Untitled

    Abstract: No abstract text available
    Text: IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A Low VCE sat IGBT High speed IGBT Maximum Ratings Symbol Test Conditions VCES T j = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 Mi2 600 V v GES Continuous ±20 V VGEM T ransient ±30 V U25 Tc = 25°C 40 A ^C90


    OCR Scan     		PDF O-247 DDD3S72

    IXGH20N60U1

    Abstract: IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB
    Text: Mb E D • MböbEEb 0000^20 7 H I X Y 'PS !-! S I X Y S CORP □IXYS PRELIMINARY TECHNICAL INFORMATION* Data Book NO.91750A October 1991 "U1" Series IGBTs IGBTs with Interna! Fast Recovery Rectifier Features High Voltage IGBT and Anti-Parallel in One Package


    OCR Scan     		PDF 1750A 30KHz T-39-15 IXGH10N60U1 IXGH10N60AU1 IXGH20N60U1 IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB