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Micro Commercial Components MSJL20N60A-TP N-CHANNEL MOSFET,DFN8080A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MSJL20N60A-TP	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $1.58863	Buy Now
	MSJL20N60A-TP	Cut Tape	2,920		1	1 $4.5 10 $2.972 100 $4.5 1000 $1.61488 10000 $1.61488	Buy Now
	MSJL20N60A-TP	Digi-Reel			1	1 $4.5 10 $2.972 100 $4.5 1000 $1.61488 10000 $1.61488	Buy Now
Mouser Electronics	MSJL20N60A-TP					1 - 10 - 100 - 1000 - 10000 $1.62	Get Quote
IXYS Corporation IXGN320N60A3 IGBT MOD 600V 320A 735W SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGN320N60A3	Tube	1,665		1	1 $43.31 10 $32.468 100 $43.31 1000 $43.31 10000 $43.31	Buy Now
Mouser Electronics	IXGN320N60A3		101			1 $36.25 10 $30.15 100 $29.86 1000 $29.86 10000 $29.86	Buy Now
TTI	IXGN320N60A3	Tube			300	1 - 10 - 100 - 1000 $39.82 10000 $39.82	Buy Now
TME	IXGN320N60A3				1	1 $38.03 10 $30.14 100 $30.14 1000 $30.14 10000 $30.14	Get Quote
ComSIT USA	IXGN320N60A3		134			1 - 10 - 100 - 1000 - 10000 -	Get Quote

New Advantage Corporation	IXGN320N60A3		210		1	1 - 10 $33.39 100 $33.39 1000 $33.39 10000 $33.39	Buy Now
IXYS Corporation IXGX120N60A3 IGBT 600V 200A 780W PLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGX120N60A3	Tube	300		300	1 - 10 - 100 - 1000 $16.73513 10000 $16.73513	Buy Now
Mouser Electronics	IXGX120N60A3		15			1 $25.7 10 $25.7 100 $22.31 1000 $16.74 10000 $16.74	Buy Now
TTI	IXGX120N60A3	Tube	300		30	1 - 10 - 100 $22.31 1000 $22.31 10000 $22.31	Buy Now
TME	IXGX120N60A3				1	1 $19.64 10 $15.48 100 $13.93 1000 $13.93 10000 $13.93	Get Quote
IXYS Corporation IXGH20N60A IGBT 600V 40A 150W TO247AD
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DigiKey	IXGH20N60A	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi HGTP20N60A4 IGBT 600V 70A TO220-3
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DigiKey	HGTP20N60A4	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	HGTP20N60A4		1,261		1	1 $2.01 10 $2.01 100 $1.89 1000 $1.71 10000 $1.71	Buy Now

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20N60A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
20N60A4		Fairchild Semiconductor	600V, SMPS Series N-Channel IGBTsnull		Original	PDF

20N60A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TA49372 Abstract: 20N60A4 equivalent Text: 20N60A4S9A Data Sheet March 2006 600V, SMPS Series N-Channel IGBTs Features The 20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of	Original	HGT1S20N60A4S9A HGT1S20N60A4S9A 150oC. 100kHz 200kHz 125oC TA49372 20N60A4 equivalent	PDF
20n60a40 Abstract: 20N60A 20N60 20N60A9 igbt 20n60 Text: Not for new designs Low VCE sat IGBT High Speed IGBT IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	O-247 O-204 O-204AE 20N60 20N60A 20N60U1 20N60AU1 20n60a40 20N60A9 igbt 20n60	PDF
IXGH20N60AU1 Abstract: IXGH20N60U1 20N60AU1 *GH20N60AU1 Text: Low VCE sat IGBT with Diode High speed IGBT with Diode VCES Combi Packs IXGH 20 N60U1 600 V IXGH 20 N60AU1 600 V Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 600 600 V V VGES VGEM Continuous Transient	Original	N60U1 N60AU1 O-247 IXGH20N60U1 IXGH20N60AU1 IXGH20N60AU1 IXGH20N60U1 20N60AU1 *GH20N60AU1	PDF
HGTG20N60A4D Abstract: No abstract text available Text: 20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a	Original	HGTG20N60A4D HGTG20N60A4D 150oC. TA49339. TA49372.	PDF
20N60A4 Abstract: 20N60A4 equivalent IGBT 20n60a4 HGTG20N60A4 HGTP20N60A4 TA49372 20N60A mosfet 20a 300v HGTG20N60A4D LD26 Text: 20N60A4, 20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The 20N60A4 and 20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	HGTG20N60A4, HGTP20N60A4 HGTG20N60A4 HGTP20N60A4 150oC. 100kHz 200kHz 125oC 20N60A4 20N60A4 equivalent IGBT 20n60a4 TA49372 20N60A mosfet 20a 300v HGTG20N60A4D LD26	PDF
20N60A4D Abstract: HGTG20N60A4D 20N60A4 TA49341 TA49339 TA49372 IFM110 LD26 TO247 Text: 20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a	Original	HGTG20N60A4D HGTG20N60A4D 150oC. TA49339. TA49372. 20N60A4D 20N60A4 TA49341 TA49339 TA49372 IFM110 LD26 TO247	PDF
20N60A4 Abstract: 20N60A4 equivalent TA49339 Text: 20N60A4, 20N60A4 Data Sheet October 1999 File Number 600V, SMPS Series N-Channel IGBTs Features The 20N60A4 and 20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	HGTG20N60A4, HGTP20N60A4 HGTG20N60A4 HGTP20N60A4 150oC. TA49339. 100kHz 20N60A4 20N60A4 equivalent TA49339	PDF
20N60A4 Abstract: 20N60A4 equivalent TA49339 IGBT 20n60a4 20N60A HGTG20N60A4 ICE 280 HGTG20N60A4D HGTP20N60A4 LD26 Text: 20N60A4, 20N60A4 Data Sheet Title GT 0N6 4, GTP N60 bt 0V, MPS ries October 1999 600V, SMPS Series N-Channel IGBTs Features The 20N60A4 and 20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	HGTG20N60A4, HGTP20N60A4 HGTG20N60A4 HGTP20N60A4 150oC. 100kHz 20N60A4 20N60A4 equivalent TA49339 IGBT 20n60a4 20N60A ICE 280 HGTG20N60A4D LD26	PDF
20n60a4d Abstract: HGTG20N60A4D TA49372 Text: 20N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input	Original	HGTG20N60A4D HGTG20N60A4D 150oC. TA49339. TA49372. 20n60a4d TA49372	PDF
20N60A Abstract: D-68623 20N60U1 20N60AU Text: Not for new designs Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C	Original	N60U1 N60AU1 D-68623 20N60U1 20N60AU1 20N60A 20N60U1 20N60AU	PDF
20N60A Abstract: f 20n60a N60A 20N60 20N60AU1 IXGH 20 N60A 30NC60 igbt 20n60 Text: Low VCE sat IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 40 A IC90	Original	20N60 20N60A O-204AE 20N60 20N60A 20N60U1 20N60AU1 f 20n60a N60A IXGH 20 N60A 30NC60 igbt 20n60	PDF
20N60AU1 Abstract: ixgh 1500 IXGH20N60U1 ixgh20N60AU1 Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 20 N60U1 IXGH 20 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	N60U1 N60AU1 20N60U1 20N60AU1 20N60AU1 ixgh 1500 IXGH20N60U1 ixgh20N60AU1	PDF
20N60A4 equivalent Abstract: No abstract text available Text: 20N60A4 Data Sheet November 2013 File Number 600 V SMPS IGBT Features The 20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high	Original	HGTG20N60A4 HGTG20N60A4 TA49339. O-247 20N60A4 equivalent	PDF
Untitled Abstract: No abstract text available Text: 20N60A4S9A Data Sheet March 2006 600V, SMPS Series N-Channel IGBTs Features The 20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of	Original	HGT1S20N60A4S9A HGT1S20N60A4S9A 150oC. 100kHz 200kHz 125oC	PDF

20N60U1 Abstract: 20N60AU1 N60AU1 Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR	Original	N60U1 N60AU1 20N60U1 20N60AU1 20N60U1 20N60AU1 N60AU1	PDF
KYS 30 40 diode Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100 Text: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching	OCR Scan	30kHz 1560A 4bflb55b Q000S1S IXSH20N60 IXSM20N60 KYS 30 40 diode 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100	PDF
40n80 Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18	OCR Scan	5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI	PDF
ixgh 1500 Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•	OCR Scan	10N60 20N60 31N60 30N60 38N60 40N60 60N60 32N60BS 40N60A ixgh 1500 25N120 200n60 60n60 igbt smd 10N60A 30N60A .25N100 20n60a	PDF
30n60 Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1 Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100	OCR Scan	00Q1737 20N60 O-247 30N60 40N60 25N100 45N100 45N120 20N60A 24N60A 30n60 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1	PDF
20N60AU Abstract: 20N60A g20n60 N60A 20N60 30 N60A bt 151 600 20n60 G LT0B igbt 20n60 Text: Not for new designs IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A Low VCE sat IGBT High Speed IGBT VC E S ^C25 Vy C E (sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Short Circuit SOA Capability §Symbol Test Conditions VCES Tj v v v Maximum Ratings = 25°C to 150°C 600 V	OCR Scan	O-247 T0-204AE 20N60AU 20N60A g20n60 N60A 20N60 30 N60A bt 151 600 20n60 G LT0B igbt 20n60	PDF
Untitled Abstract: No abstract text available Text: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62	OCR Scan	20N60 30N60 40N60 25N100 45N100 45N120 40N60AU1 35N100U1 55N100U1Â 52N60AU1Â	PDF
Untitled Abstract: No abstract text available Text: Not for new designs Low V IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 Combi Packs v CES ^C25 VC E sat 600 V 600 V 40 A 40 A 2.5 V 3.0 V <?C G Short Circuit S O A Capability OE Symbol Test Conditions VCES ^ v CGR Maximum Ratings	OCR Scan	N60U1 N60AU1 O-247 4hflb22b 20N60U1 20N60AU1	PDF
Untitled Abstract: No abstract text available Text: IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A Low VCE sat IGBT High speed IGBT Maximum Ratings Symbol Test Conditions VCES T j = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 Mi2 600 V v GES Continuous ±20 V VGEM T ransient ±30 V U25 Tc = 25°C 40 A ^C90	OCR Scan	O-247 DDD3S72	PDF
IXGH20N60U1 Abstract: IXGH17N100AU1 SOT227B package IXSH20N60U1 GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB Text: Mb E D • MböbEEb 0000^20 7 H I X Y 'PS !-! S I X Y S CORP □IXYS PRELIMINARY TECHNICAL INFORMATION Data Book NO.91750A October 1991 "U1" Series IGBTs IGBTs with Interna! Fast Recovery Rectifier Features High Voltage IGBT and Anti-Parallel in One Package	OCR Scan	1750A 30KHz T-39-15 IXGH10N60U1 IXGH10N60AU1 IXGH20N60U1 IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB	PDF

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20N60A Search Results

20N60A Price and Stock

Micro Commercial Components MSJL20N60A-TP

IXYS Corporation IXGN320N60A3

IXYS Corporation IXGX120N60A3

IXYS Corporation IXGH20N60A

onsemi HGTP20N60A4

20N60A Datasheets (1)

20N60A Datasheets Context Search

TA49372

20n60a40

IXGH20N60AU1

HGTG20N60A4D

20N60A4

20N60A4D

20N60A4

20N60A4

20n60a4d

20N60A

20N60A

20N60AU1

20N60A4 equivalent

Untitled

20N60U1

KYS 30 40 diode

40n80

ixgh 1500

30n60

20N60AU

Untitled

Untitled

Untitled

IXGH20N60U1