56750r
Abstract: 38058 67672 NTCLE203E3...SB0
Text: 2381 640 20./NTCLE203E3.SB0 Vishay BCcomponents NTC Thermistors, Radial Leaded, Automotive Grade FEATURES • High accuracy over a wide temperature range • High stability over a long life • Exceptional performance thermal shock withstanding • Approved according to the automotive norm
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/NTCLE203E3.
AEC-Q200
2002/95/EC
2002/96/EC
2000/53/EC
B25/85
18-Jul-08
56750r
38058
67672
NTCLE203E3...SB0
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jm20336
Abstract: PEX8112 RTL8102E usb to sata converter circuit diagram rtl8111* Reference RTL8111c reference design M470T2864QZ3-CF7 samsung led tv power supply diagrams JM2033 RealTek RTL8111C reference design
Text: Woodpecker Z5xx Datasheet Revision History Date Doc. Rev. Woodpecker Version Changes 08-Sept-08 Rev. 0.1 V1.0 Preliminary Release 09-Sept-08 Rev. 0.2 V1.0 Improve image quality of block diagram 08-Jan-09 Rev. 0.3 V1.0 Add front image, update power consumption
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08-Sept-08
09-Sept-08
08-Jan-09
20-Aug-09
01-Feb-2011
jm20336
PEX8112
RTL8102E
usb to sata converter circuit diagram
rtl8111* Reference
RTL8111c reference design
M470T2864QZ3-CF7
samsung led tv power supply diagrams
JM2033
RealTek RTL8111C reference design
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SMD A06
Abstract: R0005 20A06 A03 SMD
Text: SLCC CNP Vishay Sfernice Hermetic, 50 Mil Pitch, Leadless Chip Resistor Networks FEATURES • High stability ultrafilm (0.05 % at 1000 h at + 70 °C under Pn) • Custom available (CNP) • Low noise < 35 dB • SMD • Hermetic package Actual Size Capable of meeting the characteristics of MIL-PRF-83401
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MIL-PRF-83401
2002/95/EC
18-Jul-08
SMD A06
R0005
20A06
A03 SMD
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Rack and Panel Connectors
Abstract: sgm26
Text: V I S H AY I N T E R T E C H N O L O GY, I N C . INTERACTIVE data book RACK AND PANEL CONNECTORS VISHAY DALE VSE-DB0031-1003 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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VSE-DB0031-1003
Rack and Panel Connectors
sgm26
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ntc B 3977
Abstract: 3740K
Text: 2381 640 0./NTCC100E4. Vishay BCcomponents NTC Thermistors, Naked Chips FEATURES QUICK REFERENCE DATA PARAMETER VALUE Resistance value at 25 °C R25 Tolerance on R25 - value 2.2 kΩ to 470 kΩ • High stability (tolerance on B-value between ± 2.5 % and ± 0.75 %) over a long life
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/NTCC100E4.
2002/95/EC
2002/96/EC
B25/85
18-Jul-08
ntc B 3977
3740K
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RMK 48N
Abstract: No abstract text available
Text: RMK 408N, 508N, 48N, 816N, 914N CN Vishay Sfernice Wirebondable Chip Resistor Network FEATURES Actual Size Manufactured in ULTRAFILM technology, these resistor network chips have a high level of integration, wide ohmic value range, very low temperature coefficient 10 ppm/°C
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2002/95/EC
11-Mar-11
RMK 48N
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Untitled
Abstract: No abstract text available
Text: RMKD CNP Vishay Sfernice Hermetic, Dual-In-Line Packaged Resistor Networks FEATURES Actual Size The superstable RMKD nickel-chromium integrated networks are available in a range of standard designs which bring a completely new “state-of-the-art” to precision
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2002/95/EC
18-Jul-08
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A03-A06
Abstract: No abstract text available
Text: SLCC CNP Vishay Sfernice Hermetic, 50 Mil Pitch, Leadless Chip Resistor Networks FEATURES • High stability ultrafilm (0.05 % at 1000 h at + 70 °C under Pn) • Custom available (CNP) • Low noise < 35 dB • SMD • Hermetic package Actual Size Capable of meeting the characteristics of MIL-PRF-83401
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MIL-PRF-83401
12hay
11-Mar-11
A03-A06
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914N1
Abstract: RMK408N RMK508N RMK816N R-543 r3145 RMK 48N
Text: RMK 408N, 508N, 48N, 816N, 914N CN Vishay Sfernice Wirebondable Chip Resistor Network FEATURES Actual Size Manufactured in ULTRAFILM technology, these resistor network chips have a high level of integration, wide ohmic value range, very low temperature coefficient 10 ppm/°C
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2002/95/EC
18-Jul-08
914N1
RMK408N
RMK508N
RMK816N
R-543
r3145
RMK 48N
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chip resistors 1R50
Abstract: No abstract text available
Text: Space Applications Only CHPHR Vishay Sfernice ESA High Stability Thick Film Resistor Chips FEATURES • SMD wraparound chip resistor • Generic specification ESCC 4001 • Detailed specification ESCC 4001/026 • Robust terminations • Large ohmic value range 1 Ω to 10 MΩ
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18-Jul-08
chip resistors 1R50
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WTC2301
Abstract: No abstract text available
Text: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.3 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <100mΩ@V GS =-4.5V *Rugged and Reliable
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WTC2301
OT-23
OT-23
250uA
20-Aug-09
WTC2301
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. WZ COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 4 3 2 - ALL RIGHTS RESERVED. REVISIONS LOC DIST DF DO P LTR D DESCRIPTION REV PER EC 0-09-01 6341 DATE DWN APVD 20AUG09 PY RL RAISED CAVITY DENTIFICATION N U M B E R
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20AUG09
31MAR2000
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS A CONTROLLED DOCUMENT. DIESE Z EI CHNUNG I ST EIN K O N T R O L L I E R T E S D O K U M E N T LOO R E V IS I O N S D IS T P — A I AENDERUNGEN D E S C R IP T IO N BESCHREIBUNG LTR A3 DATE 3 .5 APVD VKH RRP 20AUG09 REVISED PER E C R - 0 9 - 0 1 8681
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20AUG09
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Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT | RELEASED FO R PUBLICATION 2 AUG .2006. ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. 1 LOC R E V IS IO N S DW P LTR DESCRIPTION A1 g.° 3.5 ^ D I M A - 0 . 1 TE LOGO Q N© 0 .2 5 ± 0 .0 5 OWN 20AUG09
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20AUG09
UL94V-0;
54/im
27/im
31MAR2000
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IRE02
Abstract: No abstract text available
Text: T H IS DRAWING IS A C O N TRO LLED D O CUM ENT. DIESE Z EI CHNUNG I ST EIN K O N T R O L L I E R T E S D O K U M E N T LOC REVISIONS D IS T P — A I AENDERUNGEN D E S C R IP T IO N BESCHREIBUNG UTR A3 DATE LO APVD VKH RRP 20AUG09 REVISED PER E C R - 0 9 - 0 1 8681
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20AUG09
IRE02
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. WW COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 3 2 - ALL RIGHTS RESERVED. LOC DIST DF DO R E V IS IO N S P LTR D DESCRIPTION REV PER E C 0 - 0 9 - 0 1 6341 DATE DWN APVD 20AUG09 PY RL RAISED CAVITYIDENTIFICATION N U M B E R
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20AUG09
MS18276-1
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST DF DO REVISIONS LTR D DESCRIPTION REV PER E C 0 - 0 9 - 0 1 6341 DATE DWN APVD 20AUG09 PY RL R A I S E D CAVI TY DENTIFICATION N U M B E R
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20AUG09
31MAR2000
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Untitled
Abstract: No abstract text available
Text: T H IS D I E S E Z E I C H N U N G I S T EI N K O N T R O L L I E R T E S D O K U M E N T . LO O DRAW IN G IS A C O N TRO LLED D O C U M E N T. R E V IS IO N S D IS T AENDERUNGEN P A I LTR D E S C R IP T IO N — REVISED PER A3 0 .35 O X □ ^ P D ATE DWN
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20AUG09
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Untitled
Abstract: No abstract text available
Text: 4 " T I I I L I ' I J" Io I I M P M P I I g H F n I I I i I H li 11 I i |"l ' I l ' i 'I I I I I I I I I' I M l C O P Y R IG H T 2 3 _ - R E L E A S E D FO R P U B L IC A T IO N FREI FUER VEROEFFENTLICHUNG A LL IN TERNATIONA L RIGHTS R E S E R V E D .
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E93-52531
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DIN 3966
Abstract: DIN 16901 ISO 3966 539660-1 DIN-46228 PART 4 5000AW HO-25 DIN ISO 2768 iso2768 DIN-46228 spec
Text: 4 3 T H I S D R A W IN G i impi ipi - V I R T R A U L I C I i r U N V h U u h i T b Ñ i LI LI I I L ¿ . L I U I N UNU CO PY R IG H T BY TYCO RELEASED POR PU B LIC A T IO N FREI F U E R V E R O E FF E N T LIC H U N G ELEC T R O N IC S C RO SS ORD ER D NO.
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Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. W Z COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 4 2 3 - LOC DIST REVISIONS ALL RIGHTS RESERVED. P LTR E RAISED CAVITY DENTIFICATION N U M B E R 1 R.102 + ,002 TYP [ 2 , 5 9 + 0,05] I N S I D E RADIUS
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20AUG09
31MAR2000
MS18276-1
MS18277-1
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ISO 3966
Abstract: No abstract text available
Text: 4 3 t i i r . n n A w iu r , i ? i i n r m r m ^ h e d - _ ^ f f l^ y t t t t t r t 7 N v r F m Ê F 'F E N T n r m ^ - m e n N y N 6 - C O P Y R IG H T - ORDER NO. D BESTELL-NR. R E L E A S E D F O R P U B L IC A T IO N FREI FUER VEROEFFENTLICHUNG
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Untitled
Abstract: No abstract text available
Text: 4 3 2 R E L E A S E D FO R P U B LIC A T IO N V£RXBAUti6HeW#WRDEFFÊNTnr^rrrehSWW6- LOC FREI F U E R V E R O E F F E N T L I C H U N G ALL RIGHTS R ESER VED . CO PYRIG H T REVISIO N S D IS T Al ALLE RECHTE V O R B E H A L T E N P PROJECT NO. : E 9 2 —5 2 6 2 5
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20AUG09
28JAN10
20JAN11
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Untitled
Abstract: No abstract text available
Text: 4 3 T H IS DR AW IN G IS U N P U B L I S H E D . V E R T R A U L IC H E U N V E R O E F F E N T L IC H T E ZEICHNUNG COPYRIG HT R E L E A S E D POR P U B LIC A T IO N FREI FUER VE R O E F FEN T L IC H U N G ALL RIGHTS R E SERVE D . A L L E R EC HTE V O R B E H A L T E N
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