Untitled
Abstract: No abstract text available
Text: 107-68787 Packaging Specification 20Apr09 Rev E 2MM PITCH BATTERY CONNECTOR 1. PURPOSE 目的 Define the packaging specifiction and packaging method of 2MM PITCH BATTERY CONNECTOR. 订定 2MM PITCH BATTERY CONNECTOR 产品之包装规格及包装方式。
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20Apr09
295X182X13
295X182X16
295X182X24
QR-ME-030B
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Untitled
Abstract: No abstract text available
Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si7613DN
2002/95/EC
Si7613DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Si3447CDV-T1-GE3
Abstract: No abstract text available
Text: Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.036 at VGS = - 4.5 V - 7.8 0.050 at VGS = - 2.5 V - 6.6 0.068 at VGS = - 1.8 V - 5.6 • Halogen-free According to IEC 61249-2-21 Definition
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Si3447CDV
2002/95/EC
Si3447CDV-T1-E3
Si3447CDV-T1-GE3
11-Mar-11
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Si4501DY
Abstract: Si4501DY-T1-E3
Text: Si4501DY Vishay Siliconix Complementary MOSFET N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 RDS(on) (Ω) ID (A) 0.018 at VGS = 10 V ±9 0.027 at VGS = 4.5 V ± 7.4 0.042 at VGS = - 4.5 V ± 6.2 0.060 at VGS = - 2.5 V ± 5.2
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Si4501DY
2002/95/EC
Si4501DY-T1
Si4501DY-T1-E3
11-Mar-11
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at91sam
Abstract: No abstract text available
Text: Features • Two-pin UART – Implemented Features are USART Compatible – Independent Receiver and Transmitter with a Common Programmable Baud Rate Generator – Even, Odd, Mark or Space Parity Generation – Parity, Framing and Overrun Error Detection – Automatic Echo, Local Loopback and Remote Loopback Channel Modes
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6418BS
20-Apr-09
at91sam
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tsop6 package
Abstract: No abstract text available
Text: New Product Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.034 at VGS = - 10 V - 8a 0.053 at VGS = - 4.5 V -7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si3483CDV
2002/95/EC
Si3483CDV-T1-E3
Si3483CDV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
tsop6 package
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Untitled
Abstract: No abstract text available
Text: Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.036 at VGS = - 4.5 V - 7.8 0.050 at VGS = - 2.5 V - 6.6 0.068 at VGS = - 1.8 V - 5.6 • Halogen-free According to IEC 61249-2-21 Definition
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Si3447CDV
2002/95/EC
Si3447CDV-T1-E3
Si3447CDV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiJ800DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () ID (A) 0.0095 at VGS = 10 V 20a 0.0115 at VGS = 4.5 V 20a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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SiJ800DP
2002/95/EC
SiJ800DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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si5456
Abstract: No abstract text available
Text: Si5456DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.010 at VGS = 10 V 12 0.0135 at VGS = 4.5 V 12 Qg (Typ.) 9.8 nC PowerPAK ChipFET Single 1 2 D 3 D D G D 7 S 6 S D APPLICATIONS 4 D D 8 • Halogen-free According to IEC 61249-2-21
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Si5456DU
2002/95/EC
Si5456DU-T1-GE3
11-Mar-11
si5456
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Untitled
Abstract: No abstract text available
Text: New Product Si3473CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.022 at VGS = - 4.5 V -8 0.028 at VGS = - 2.5 V -8 0.036 at VGS = - 1.8 V -8 • Halogen-free According to IEC 61249-2-21 Definition
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Si3473CDV
2002/95/EC
Si3473CDV-T1-E3
Si3473CDV-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SiS902DN Vishay Siliconix Dual N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 RDS(on) (Ω) ID (A) 0.186 at VGS = 10 V 4e 0.228 at VGS = 4.5 V 4e Qg (Typ.) 2.1 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SiS902DN
2002/95/EC
SiS902DN-T1-GE3
18-Jul-08
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LCD-320H240BP2
Abstract: LCD-320H240BP3 LCD-320H240BX
Text: LCD-320H240BX, LCD-320H240BP2, LCD-320H240BP3 Vishay 320 x 240 Graphic LCD FEATURES • Type: Graphic • Display format: 320 x 240 dots • Built-in controller: Epson S1D13700 • Duty cycle: 1/240 • Touch screen option • Temperature compensation option
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LCD-320H240BX,
LCD-320H240BP2,
LCD-320H240BP3
S1D13700
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
LCD-320H240BP2
LCD-320H240BP3
LCD-320H240BX
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LCD-320H240H
Abstract: No abstract text available
Text: LCD-320H240H Vishay 320 x 240 Graphic LCD FEATURES • Type: Graphic • Display format: 320 x 240 dots • Built-in controller: None • Duty cycle: 1/240 • + 5 V power supply • Touch screen option analog type • Compliant to RoHS directive 2002/95/EC
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LCD-320H240H
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
LCD-320H240H
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Untitled
Abstract: No abstract text available
Text: LCD-320H240L Vishay 320 x 240 Graphic LCD FEATURES • Type: Graphic • Display format: 320 x 240 dots • Built-in controller: None • Duty cycle: 1/240 • + 5 V power supply • Touch screen option • Compliant to RoHS directive 2002/95/EC MECHANICAL DATA
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LCD-320H240L
2002/95/EC
18-Jul-08
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LCD 320 240 EL
Abstract: RA8803 STN LCD controller
Text: LCD-320H240R Vishay 320 x 240 Graphic LCD FEATURES • Type: Graphic • Display format: 320 x 240 dots • Built-in controller: RA8803 • Duty cycle: 1/240 • Built-in N.V. • Touch screen option • Temperature compensation option • Chinese version
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LCD-320H240R
RA8803
LCD-320H240B
2002/95/EC
18-Jul-08
LCD 320 240 EL
RA8803
STN LCD controller
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Untitled
Abstract: No abstract text available
Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si7613DN
2002/95/EC
Si7613DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si3458BDV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A)d 0.100 at VGS = 10 V 4.1 0.128 at VGS = 4.5 V 3.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si3458BDV
2002/95/EC
Si3458BDV-T1-E3
Si3458emarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: LCD-320H240B Vishay 320 x 240 Graphic LCD FEATURES • Type: Graphic • Display format: 320 x 240 dots • Built-in controller: RA8835 and SRAM • Duty cycle: 1/240 • Built-in N.V. • Touch screen option analog type • Temperature compensation option
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LCD-320H240B
RA8835
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiJ800DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () ID (A) 0.0095 at VGS = 10 V 20a 0.0115 at VGS = 4.5 V 20a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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SiJ800DP
2002/95/EC
SiJ800DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SUM90P10-19L Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 90 0.021 at VGS = - 4.5 V - 85 Qg (Typ.) • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC 97 nC
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SUM90P10-19L
2002/95/EC
O-263
SUM90P10-19L-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.027 at VGS = - 4.5 V -8 0.036 at VGS = - 2.5 V -8 0.048 at VGS = - 1.8 V - 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si3471CDV
2002/95/EC
Si3471CDV-T1-E3
Si3471CDV-T1-GE3
11-Mar-11
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CAT34TS02VP2GT4A
Abstract: 1E70 CAT34TS02 marking code onsemi Diode B14 JC42 MO-229 34TS02
Text: CAT34TS02 Digital Output Temperature Sensor with On-board SPD EEPROM FEATURES DESCRIPTION JEDEC JC42.4 Compliant Temperature Sensor Temperature Range: - 40°C to +125°C DDR3 DIMM compliant SPD EEPROM Supply Range: 3.3 V ± 10% I2C / SMBus Interface Schmitt Triggers and Noise Suppression Filters
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CAT34TS02
CAT34TS02
MD-1129
CAT34TS02VP2GT4A
1E70
marking code onsemi Diode B14
JC42
MO-229
34TS02
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SUM90P10-19L
Abstract: SUM90P10-19L-E3
Text: SUM90P10-19L Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 90 0.021 at VGS = - 4.5 V - 85 Qg (Typ.) • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC 97 nC
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SUM90P10-19L
2002/95/EC
O-263
SUM90P10-19L-E3
11-Mar-11
SUM90P10-19L
SUM90P10-19L-E3
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RA8835
Abstract: No abstract text available
Text: LCD-320H240C Vishay 320 x 240 Graphic LCD FEATURES • Type: Graphic • Display format: 320 x 240 dots • Built-in controller: RA8835 and SRAM • Duty cycle: 1/240 • Built-in N.V. • Touch screen option analog type • Temperature compensation option
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LCD-320H240C
RA8835
2002/95/EC
11-Mar-11
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