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    2061 TRANSISTOR Search Results

    2061 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2061 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K 1358 fet transistor

    Abstract: MAX1679 T101D103-CA 140-103LAG-RBI MAX1879 MAX1879EUA MAX1879EVKIT ZHCS1000 FDC638P FET K 1358
    Text: 19-2061; Rev 0; 5/01 NK EVALUATIO IT AVAILA BLE Simple, Efficient, 1-Cell Li+ Pulse Charger Features ♦ Simple Design Minimizes Heat The MAX1879 initiates charging in one of three ways: battery insertion, charger power-up, or toggling the THERM pin. Key safety features include continuous voltage and


    Original     		PDF MAX1879 MAX1879 K 1358 fet transistor MAX1679 T101D103-CA 140-103LAG-RBI MAX1879EUA MAX1879EVKIT ZHCS1000 FDC638P FET K 1358

    T101D103-CA

    Abstract: ntc 100-20 K 1358 fet transistor 140-103LAG-RBI T101D103 Fenwal NTC MAX1879 FDC638P MAX1679 MAX1879EUA
    Text: 19-2061; Rev 0; 5/01 ABLE KIT AVAIL N IO T A U L EVA Simple, Efficient, 1-Cell Li+ Pulse Charger Features ♦ Simple Design Minimizes Heat The MAX1879 initiates charging in one of three ways: battery insertion, charger power-up, or toggling the THERM pin. Key safety features include continuous voltage and


    Original     		PDF MAX1879 MAX1879 T101D103-CA ntc 100-20 K 1358 fet transistor 140-103LAG-RBI T101D103 Fenwal NTC FDC638P MAX1679 MAX1879EUA

    ic 2061 d

    Abstract: 2061 D transistor 2061 D 2061 CDD2061 2061 transistor 2061 2061D
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL POWER TRANSISTOR CDD2061 9AW TO-220 Designed For AF Power Amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VCBO Collector -Base Voltage


    Original     		PDF CDD2061 O-220 25deg C-120 ic 2061 d 2061 D transistor 2061 D 2061 CDD2061 2061 transistor 2061 2061D

    ic 2061 d

    Abstract: CDD2061 2061 D
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON EPITAXIAL POWER TRANSISTOR CDD2061 9AW TO-220 Designed For AF Power Amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)


    Original     		PDF CDD2061 O-220 25deg C-120 ic 2061 d CDD2061 2061 D

    2061 D

    Abstract: PD 2061 A HCF4070BEY SO14-DIP14 2061
    Text: HCF4070 Quad exclusive OR gate Datasheet − production data Features • Medium-speed operation tPHL = tPLH = 70 ns typ at CL = 50 pF and VDD = 10 V ■ Quiescent current specified up to 20 V ■ 5 V, 10 V and 15 V parametric ratings ■ Input leakage current


    Original     		PDF HCF4070 DIP14 HCF4070 DIP14 2061 D PD 2061 A HCF4070BEY SO14-DIP14 2061

    HCF4070B

    Abstract: No abstract text available
    Text: HCF4070 Quad exclusive OR gate Datasheet − production data Features • Medium-speed operation tPHL = tPLH = 70 ns typ at CL = 50 pF and VDD = 10 V ■ Quiescent current specified up to 20 V ■ 5 V, 10 V and 15 V parametric ratings ■ Input leakage current


    Original     		PDF HCF4070 DIP14 HCF4070 DIP14 HCF4070B

    DS33646

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC2061E6 ADVANCE INFORMATION 12V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features Mechanical Data • • NPN + PNP Combination BVCEO > 12 -12 V • Case: SOT26 • Case Material: Molded Plastic, “Green” Molding Compound


    Original     		PDF ZXTC2061E6 AEC-Q101 J-STD-020 MIL-STD-202, DS33646

    2SC2061

    Abstract: la 7820 T103
    Text: R O H M CO LTD ' ~ 40E J> 7820= ^ h J7 > y X # /T ran sisto rs GGOSbSS 7 BRHM 2S C 2061 T ^ - a T NPN y «;=!> bÿ>yz$ i^S^liaiiffl/M edium Power Amp. lEpitaxial Planar NPN Silicon Transistor 2SC2CS1 sifW'A'vli-7- • i+ïfi'îJ'jÈH/Diinensions Unit : mm


    OCR Scan     		PDF 2SC2061 700mA 700mA O-92L SC-51 T-27-15 2SC2061 la 7820 T103

    2sd2061

    Abstract: No abstract text available
    Text: 40E ROHM CO L T ]> 7020^=1 » 0Q0b037 h "7 > v 7> $ /'Tran sistors IRHM 7 2SD 2061 7 ^ 3 3 -0 9 I S 1 “ • NP N h - 7 > v X ^ • ttft V^JViV^I'T Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • Wfé'ÎîÉISI/Dimensions Unit: mm 1) VcE (sat)


    OCR Scan     		PDF 0Q0b037 O-220FP 2SD2061 HU-72-I 2sd2061

    Untitled

    Abstract: No abstract text available
    Text: ROHM CO LTD ~ 40E » ? a S Û W QQOSb'iS h 7 > V ^ ^ / T r a n s is t o r s 7 HRHN 2S C 2061 % 2 7 -js r - — N P N h 7 > y z $ l+ S ^ ia H ffl/ M e d iu m Power Amp. ¡Epitaxial Planar NPN Silicon Transistor V1-5JViVvIi-y • ii-Jfi'^jilS/Dimensions Unit : mm


    OCR Scan     		PDF

    VLN 2003a

    Abstract: HP 2061 2SC4455 wo8j "1SV 90"
    Text: Ordering number: EN 2814 2SC4455 No.2814 i SAß»YO NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications F e a tu re s • F ast switching speed • Low collector saturation voltage • High gain-bandwidth product • Small collector capacity


    OCR Scan     		PDF 2SC4455 2034/2034A SC-43 7tlt17D7b VLN 2003a HP 2061 2SC4455 wo8j "1SV 90"

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN 2814 i S A iY O _ 2SC4455 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications F eatu res • Fast switching speed • Low collector saturation voltage • High gain-bandwidth product • Small collector capacity


    OCR Scan     		PDF 2SC4455 2SC4455 0278M

    "to-98" package

    Abstract: MPS5172 2N5172 2N6076 PN5172 2n5172 to-92 TO-98 RCA 2N
    Text: G E SOLI» STATE DE | 3075DÛ1 0 0 1 7 C]3T 1 | r* s ' -Signal Transistors 2N5172, MPS5172, PN5172,2N6076 Silicon Transistors TO-92 TO-98


    OCR Scan     		PDF 2N5172, MPS5172, PN5172, 2N6076 PN5172 2N6076 PN5172) O-910 "to-98" package MPS5172 2N5172 2n5172 to-92 TO-98 RCA 2N

    "to-98" package

    Abstract: 2N5172
    Text: G E SOLI» STATE DE j3fl7SDùl 0 0 1 7 c]3cì 1 | T~- "¿sr Signal Transistors 2N5172, MPS5172, PN5172, 2N6076 Silicon Transistors TO-92 TO-98 The GE/RCA 2N, MPS, PN5172 are NPN and 2N6076 is a


    OCR Scan     		PDF 2N5172, MPS5172, PN5172, 2N6076 PN5172 obser10V, "to-98" package 2N5172

    transistor 2061

    Abstract: 2PD602S 2PB710 2PB710A 2PD602 2PD602A 2PD602AQ 2PD602AR 2PD602Q 2PD602R
    Text: 7 1 1 0 fl 5 b DD7GQ24 bSG ^ I P H I N Philips Semiconductors NPN general purpose transistor Objective specification 2PD602; 2PD602A PIN CONFIGURATION FEATURES • Large collector current a • Low collector-emitter saturation voltage. DESCRIPTION NPN transistor in a plastic SC59


    OCR Scan     		PDF 711Dfl5b 0D7GQ24 2PD602; 2PD602A 2PB710 2PB710A 2PD602Q: 2PD602R: 2PD602S: 2PD602AQ: transistor 2061 2PD602S 2PD602 2PD602A 2PD602AQ 2PD602AR 2PD602Q 2PD602R

    2PB710

    Abstract: 2PB710A 2PD602 2PD602A 2PD602AQ 2PD602Q 2PD602R 2PD602S SC59 transistor 2061
    Text: Philips Semiconductors 7 1 1 D flE b D D 7 G0 2 4 bSG • P H IN NPN general purpose transistor FEATURES Objective specification 2PD602; 2PD602A PIN CONFIGURATION • Large collector current • Low col lector-emitter saturation voltage. DESCRIPTION H-


    OCR Scan     		PDF 711DflEb 007Q021J 2PD602; 2PD602A 2PB710 2PB710A VSA314 2PD602Q: 2PD602R: 2PD602S: 2PD602 2PD602A 2PD602AQ 2PD602Q 2PD602R 2PD602S SC59 transistor 2061

    LB 1001 SANYO

    Abstract: 2SC4455 T500
    Text: Ordering number:EN 2814 2SC4455 No.2814 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • Fast switching speed •Low collector saturation voltage • High gain-bandwidth product • Small collector capacity bsolute Maximum Ratings at Ta = 25°C


    OCR Scan     		PDF 2SC4455 LB 1001 SANYO 2SC4455 T500

    2061 D

    Abstract: 2PD602S ic 2061 d 2PB710 2PB710A 2PD602 2PD602A 2PD602AQ 2PD602AR 2PD602Q
    Text: bb53<ì31 OGSbOSÖ lai M A R X Philips Semiconductors NPN general purpose transistor Objective specification 2PD602; 2PD602A N AI1ER P H I L I P S / D I S C R E T E b?E FEATURES • Large collector current • Low collector-emitter saturation voltage. DESCRIPTION


    OCR Scan     		PDF 2PD602; 2PD602A 2PB710 2PB710A -SC59 2PD602Q: 2PD602R: 2PD602S: 2PD602AQ: 2PD602AR: 2061 D 2PD602S ic 2061 d 2PD602 2PD602A 2PD602AQ 2PD602AR 2PD602Q

    2SA1582

    Abstract: sanyo 2033
    Text: ; Ordering number: EN 2505 2SA1582/2SC4113 PN P/ NPN Epitaxial Planar Silicon Transistors SAiYOl Switching Applications with Bias Resistance Applications . Switching circuit, inverter circuit, interface circuit, driver circuit Features . On-chip bias resistance (Ri = 2.2kfl,R2= °°)


    OCR Scan     		PDF 2SA1582/2SC4113 2SA1582 2034/2034A SC-43 7tlt17D7b sanyo 2033

    2SA1572

    Abstract: No abstract text available
    Text: Ordering number: EN 2 4 5 8 2SA1572/2SC4067 PNP/ NPN Epitaxial Planar Silicon Transistors I SAKYOi Switching Applications with Bias Resistance Applications . Switching circuit, inverter circuit, interface circuit, driver circuit Features . On-chip bias resistance: R1=0, R2=47kii


    OCR Scan     		PDF 2SA1572/2SC4067 47kii SC-43 rO-92 3C-43 2SA1572

    icl 2025

    Abstract: 2005A TRANSISTOR IFW 2SA1591 2SC4133 BT 3713
    Text: SANYO SEMICONDUCTOR CORP 32E D 7 cn ? G 7 f c 1 0 0 0 1 1 7 5 - G E3 T— 37— 13 V" T— 35— 11 P N P /N P N Epitaxial Planar Silicon Transistors 2051 Switching Applications with Bias Resistances R1=4.7kflf R2=47kO 2530 Applications Switching circuit, inverter circuit, interface circuit, driver circuit


    OCR Scan     		PDF G00T175 47kohms) T-91-20 SC-43 icl 2025 2005A TRANSISTOR IFW 2SA1591 2SC4133 BT 3713

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN2381 No.2381 2 S A 1 5 6 4 /2 S C 4 0 4 8 PNP/ NPN Epitaxial Planar Silicon Transistors Switching Applications with Bias Resistance Applications . Switching circuit, inverter circuit, interface circuit, driver circuit Features . On-chip bias resistance:


    OCR Scan     		PDF EN2381 10kii 2SA1564 SC-51 rO-92 3C-43

    sef530

    Abstract: SEF532 SEF531 60v 9A c243s
    Text: S G'S-THOMSON. 0 7 E 73C D 17*12*1237 17518 D •\ ' T N-CHANNEL POWER MDS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N'Channel enhancement mode Power-Mos field effect transistors. A B SO LU TE MAXIMUM RATINGS


    OCR Scan     		PDF SEF530 SEF531 SEFS32 sif533 00V/60V 00V/60V SEF532/SEF533 300ms, SGSP361 C-243 SEF532 60v 9A c243s

    2SA170B

    Abstract: 2SC485 2sa105 transistor 2sa1705 2SC4485 2SA1705
    Text: Ordering number: EN 3025 2SA1705/2SC4485 No.3025 SAMYO i PNP/NPN Epitaxial Planar Silicon Transistors Low-Frequency Power Amp Applications Applications . Voltage regulators, relay drivers, lamp drivers. Features . Adoption of FBET process. • Fast switching speed.


    OCR Scan     		PDF 2SA1705/2SC4485 2SA1705 2034/2034A SC-43 7tlt17D7b 2SA170B 2SC485 2sa105 transistor 2sa1705 2SC4485