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    2048K EPROM Search Results

    2048K EPROM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM27C256-55DM/B Rochester Electronics AM27C256 - 256K (32KX8) CMOS EPROM Visit Rochester Electronics Buy
    AM27C010-55PI-G Rochester Electronics AM27C010 - EPROM - OTP, EPROM - UV 1Mbit 128k x 8 Visit Rochester Electronics Buy
    D2716 Rochester Electronics LLC EPROM Visit Rochester Electronics LLC Buy
    AM27C010-70PI-G Rochester Electronics AM27C010 - CMOS EPROM 1 Megabit (128K x 8) Visit Rochester Electronics Buy
    AM27C512-200DCB Rochester Electronics AM27C512 - 512K (64K x 8) CMOS EPROM Visit Rochester Electronics Buy

    2048K EPROM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IS25LQ016-JBLI

    Abstract: No abstract text available
    Text: 16 Mbit Single Operating Voltage Serial Flash Memory With 104 MHz Dual- or 100MHz Quad-Output SPI Bus Interface IS25LQ016 FEATURES • Single Power Supply Operation - Low voltage range: 2.3 V - 3.6 V • Memory Organization - IS25LQ016: 2048K x 8 16 Mbit


    Original     		PDF 100MHz IS25LQ016 IS25LQ016: 2048K 64KByte 208MHz 400MHz IS25LQ016-JBLE IS25LQ016-JBLI

    Untitled

    Abstract: No abstract text available
    Text: IS25LQ016 16 Mbit Single Operating Voltage Serial Flash Memory With 104 MHz Dual- or 100MHz Quad-Output SPI Bus Interface FEATURES PRELIMINARY DATASHEET • Single Power Supply Operation - Low voltage range: 2.3 V - 3.6 V • Memory Organization - IS25LQ016: 2048K x 8 16 Mbit


    Original     		PDF IS25LQ016 100MHz IS25LQ016: 2048K 64KByte IS25LQ016-JMLE IS25LQ016-JBLE IS25LQ016-JNLE IS25LQ016-JKLE

    Untitled

    Abstract: No abstract text available
    Text: IS25LQ016 16 Mbit Single Operating Voltage Serial Flash Memory With 104 MHz Dual- or 100MHz Quad-Output SPI Bus Interface FEATURES PRELIMINARY DATASHEET • Single Power Supply Operation - Low voltage range: 2.3 V - 3.6 V • Memory Organization - IS25LQ016: 2048K x 8 16 Mbit


    Original     		PDF IS25LQ016 100MHz IS25LQ016: 2048K 64KByte 208MHz 400MHz IS25LQ016-JMLE

    Untitled

    Abstract: No abstract text available
    Text: IS25LQ016 16 Mbit Single Operating Voltage Serial Flash Memory With 104 MHz Dual- or 100MHz Quad-Output SPI Bus Interface FEATURES • Single Power Supply Operation - Low voltage range: 2.3 V - 3.6 V PRELIMINARY DATASHEET • Memory Organization - IS25LQ016: 2048K x 8 16 Mbit


    Original     		PDF IS25LQ016 100MHz IS25LQ016: 2048K 64KByte IS25LQ016-JMLE IS25LQ016-JBLE IS25LQ016-JNLE IS25LQ016-JKLE

    IS25LQ016-JBLI

    Abstract: IS25LQ016
    Text: IS25LQ016 16 Mbit Single Operating Voltage Serial Flash Memory With 104 MHz Dual- or 100MHz Quad-Output SPI Bus Interface FEATURES PRELIMINARY DATASHEET • Single Power Supply Operation - Low voltage range: 2.3 V - 3.6 V • Memory Organization - IS25LQ016: 2048K x 8 16 Mbit


    Original     		PDF IS25LQ016 100MHz IS25LQ016: 2048K 64KByte 208MHz 400MHz IS25LQ016-JBLE IS25LQ016-JKLE IS25LQ016-JALE IS25LQ016-JBLI IS25LQ016

    Untitled

    Abstract: No abstract text available
    Text: Pm25LQ016 16 Mbit Single Operating Voltage Serial Flash Memory With 104 MHz Dual- or 100MHz Quad-Output SPI Bus Interface FEATURES • Single Power Supply Operation - Low voltage range: 2.3 V - 3.6 V • Memory Organization - Pm25LQ016: 2048K x 8 16 Mbit


    Original     		PDF Pm25LQ016 Pm25LQ016: 2048K 64KByte 208MHz 400MHz 150ms 256Byte 150us

    Untitled

    Abstract: No abstract text available
    Text: Pm25LQ016 16 Mbit Single Operating Voltage Serial Flash Memory With 104 MHz Dual- or 100MHz Quad-Output SPI Bus Interface FEATURES • Single Power Supply Operation - Low voltage range: 2.3 V - 3.6 V • Memory Organization - Pm25LQ016: 2048K x 8 16 Mbit


    Original     		PDF Pm25LQ016 Pm25LQ016: 2048K 64KByte 208MHz 400MHz 256Byte 150us 50MHz

    Untitled

    Abstract: No abstract text available
    Text: IS25LQ016 16 Mbit Single Operating Voltage Serial Flash Memory With 104 MHz Dual- or 100MHz Quad-Output SPI Bus Interface FEATURES PRELIMINARY DATASHEET • Single Power Supply Operation - Low voltage range: 2.3 V - 3.6 V • Memory Organization - IS25LQ016: 2048K x 8 16 Mbit


    Original     		PDF IS25LQ016 100MHz IS25LQ016: 2048K 64KByte IS25LQ016-JBLE IS25LQ016-JNLE IS25LQ016-JKLE IS25LQ016-JLLE

    Untitled

    Abstract: No abstract text available
    Text: IS25LQ016 16 Mbit Single Operating Voltage Serial Flash Memory With 104 MHz Dual- or 100MHz Quad-Output SPI Bus Interface FEATURES PRELIMINARY DATASHEET • Single Power Supply Operation - Low voltage range: 2.3 V - 3.6 V • Memory Organization - IS25LQ016: 2048K x 8 16 Mbit


    Original     		PDF IS25LQ016 100MHz IS25LQ016: 2048K 64KByte 208MHz 400MHz IS25LQ016-JMLE

    28F020

    Abstract: 80C186 80c186 specification update
    Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 2 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 4 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g 5% VPP Y High-Performance Read


    Original     		PDF 28F020 2048K 32-Pin 32-Lead AP-325 ER-20 -80V05 28F020 80C186 80c186 specification update

    EPROM 271024

    Abstract: 271024 271024 eprom 8F57 27C1024 J40AQ NMC27C2048Q150
    Text: PRELIMINARY NMC27C2048 2,097,152-Bit 128k x 16 UV Erasable CMOS PROM General Description Features The NMC27C2048 is a high-speed 2048k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applications where fast turnaround, pattern experimenta­


    OCR Scan     		PDF NMC27C2048 152-Bit NMC27C2048 2048k 40-pin EPROM 271024 271024 271024 eprom 8F57 27C1024 J40AQ NMC27C2048Q150

    27C128

    Abstract: 27C256 27C512 NMC27C020
    Text: PRELIMINARY NMC27C020 National Semiconductor NMC27C020 2,097,152-Bit 256k x 8 UV Erasable CMOS PROM General Description Features The NMC27C020 is a high-speed 2048k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applications where fast turnaround, pattern experimenta­


    OCR Scan     		PDF NMC27C020 152-Bit NMC27C020 2048k 32-pin 27C128 27C256 27C512

    M27C2001-15F1

    Abstract: 27c2001 M27C2001
    Text: SGS-THOMSON M27C2001 IL I 2048K 256K x 8 CMOS UV EPROM VERY FAST ACCESS TIME : 120 ns. COMPATIBLE TO HIGH SPEED MICROPRO­ CESSORS ZERO WAIT STATE. LOW POWER "CMOS" CONSUMPTION : _ Operating current 35 mA _ Stand by current 200 jiA. PROGRAMMING VOLTAGE 12.75V.


    OCR Scan     		PDF M27C2001 2048K M27C2001 FDIP32-W FDIP32-W 32-PIN M27C2001-15F1 27c2001

    27C2001

    Abstract: m27c2001-15f1
    Text: SCS-THOMSON itLiOTTIËMOtgi M27C2001 2048K 256K x 8 CMOS UV EPROM • VERY FAST ACCESS TIME : 120 ns. ■ COM PATIBLE TO HIGH SPEED MICROPRO­ CESSORS ZERO W AIT STATE. ■ LOW POWER "CMOS" CONSUMPTION : _ Operating current 35 mA _ Stand by current 200 |aA.


    OCR Scan     		PDF M27C2001 2048K M27C2001 27C2001 m27c2001-15f1

    IN6AG

    Abstract: 28F020 intel 28F020
    Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		PDF 28F020 2048K 32-Pin 32-LEAD P28F020-70 N28F020-70 P28F020-90 IN6AG intel 28F020

    2046K

    Abstract: 28F020 SmartDie 29024
    Text: in t e * 28F020 2048K 256K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 2 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10 /xs Typical Byte Program — 4 Second Chip Program 100K Erase/Program Cycles Typical


    OCR Scan     		PDF 28F020 2048K X28F020-90 ER-20, ER-24, RR-60, AP-316, AP-325, 2046K SmartDie 29024

    i80C186

    Abstract: M28F020 29024
    Text: in tj 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		PDF 28F020 2048K 32-Pin 32-Lead -32-Lead -80V05, -80V05 AP-325 i80C186 M28F020 29024

    Untitled

    Abstract: No abstract text available
    Text: in te l 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read


    OCR Scan     		PDF 28F020 2048K AP-316 AP-325 -80V05, -80V05 28F020 4a2bl75 Qlbb077

    P28F020-150

    Abstract: 28F020 80C186 E28F020 F28F020 intel 28F020
    Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 fis Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		PDF 28F020 2048K ER-20, ER-24, ER-28, RR-60, AP-316, AP-325 -80V05, -80V05 P28F020-150 28F020 80C186 E28F020 F28F020 intel 28F020

    Untitled

    Abstract: No abstract text available
    Text: 28F020 2048K 256K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 Typical Byte-Program — 4 second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% Vpp ■ High-Performance Read


    OCR Scan     		PDF 28F020 2048K 32-Pin 32-Lead

    Untitled

    Abstract: No abstract text available
    Text: DPZ2MS16P □PM Dense-Pac Microsystems, Inc. O 2048K X 16 FLASH MEMORY MODULE PRELIMINARY D ESC RIPTIO N : The DPZ2M S16P is a 32 megabit C M O S FLASH Electrically Erasable and Programmable nonvolatile memory module. The module is built with sixteen 256K x 8 FLASH memory devices


    OCR Scan     		PDF DPZ2MS16P 2048K 4096K S16XP) 30A052-00 DPZ2MS16XP

    SSC16E

    Abstract: N28F020-200 28F020-150 29024 28F020 intel 28F020
    Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Noise Immunity Features — +10% Vcc Tolerance — Maximum Latch-Up Immunity through EPI Processing ■ Quick-Pulse Programming Algorithm — 10 f i s Typical Byte-Program


    OCR Scan     		PDF 28F020 2048K 28F020 32-PIN 32-LEAD P28F020-150 N28F020-150 P28F020-200 SSC16E N28F020-200 28F020-150 29024 intel 28F020

    Untitled

    Abstract: No abstract text available
    Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Quick-Pulse P r o g r a m m i n g Algorithm — 10 fis Typical Byte-Program


    OCR Scan     		PDF 28F020 2048K ER-20, ER-24, AP-316, AP-325 -80V05, RR-60, ER-28,

    n28f020-150

    Abstract: No abstract text available
    Text: in te i 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 juls Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ±5% VPP High-Performance Read


    OCR Scan     		PDF 28F020 2048K -80V05, -80V05 n28f020-150