eeprom 25080
Abstract: 25080 948AL CAT25080 CAT25160 Q100 25080 eeprom 1024x8
Text: CAT25080, CAT25160 8-Kb and 16-Kb SPI Serial CMOS EEPROM Description The CAT25080/25160 are 8−Kb/16−Kb Serial CMOS EEPROM devices internally organized as 1024x8/2048x8 bits. They feature a 32−byte page write buffer and support the Serial Peripheral Interface
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CAT25080,
CAT25160
16-Kb
CAT25080/25160
8-Kb/16-Kb
1024x8/2048x8
32-byte
CAT25080/25160
751BD
517AW
eeprom 25080
25080
948AL
CAT25080
CAT25160
Q100
25080 eeprom
1024x8
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25c08v
Abstract: 25C16LI CAT25160 25C16VI 25C08 25C16 AEC-Q100 CAT25C08 CAT25C16 25C08L
Text: Not Recommended for New Design, Replace with CAT25080/CAT25160 CAT25C08, CAT25C16 8K/16K SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C08/16 is a 8K/16K Bit SPI Serial CMOS EEPROM internally organized as 1024x8/2048x8 bits.
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CAT25080/CAT25160
CAT25C08,
CAT25C16
8K/16K
CAT25C08/16
1024x8/2048x8
CAT25C08/
32-byte
CAT25C08/or
25c08v
25C16LI
CAT25160
25C16VI
25C08
25C16
AEC-Q100
CAT25C08
CAT25C16
25C08L
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25c08v
Abstract: 25C16VI 25C16V cat25c08 25Y08 24C168
Text: CAT25C08, CAT25C16 8K/16K SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C08/16 is a 8K/16K Bit SPI Serial CMOS EEPROM internally organized as 1024x8/2048x8 bits. Catalyst’s advanced CMOS Technology substantially reduces device power requirements. The CAT25C08/
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CAT25C08,
CAT25C16
8K/16K
32-byte
CAT25C08/16
1024x8/2048x8
CAT25C08/
25c08v
25C16VI
25C16V
cat25c08
25Y08
24C168
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25160D
Abstract: eeprom 25080 25080 eeprom
Text: CAV25080, CAV25160 8-Kb and 16-Kb SPI Serial CMOS EEPROM Description The CAV25080/25160 are 8−Kb/16−Kb Serial CMOS EEPROM devices internally organized as 1024x8/2048x8 bits. They feature a 32−byte page write buffer and support the Serial Peripheral Interface
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CAV25080,
CAV25160
16-Kb
CAV25080/25160
8-Kb/16-Kb
1024x8/2048x8
32-byte
751BD
948AL
25160D
eeprom 25080
25080 eeprom
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25160D
Abstract: s08d 25080D CAT25080YE-G eeprom 25080 UDFN8 254
Text: CAT25080, CAT25160 8-Kb and 16-Kb SPI Serial CMOS EEPROM Description The CAT25080/25160 are 8−Kb/16−Kb Serial CMOS EEPROM devices internally organized as 1024x8/2048x8 bits. They feature a 32−byte page write buffer and support the Serial Peripheral Interface
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Original
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CAT25080,
CAT25160
16-Kb
CAT25080/25160
8-Kb/16-Kb
1024x8/2048x8
32-byte
751BD
517AW
25160D
s08d
25080D
CAT25080YE-G
eeprom 25080
UDFN8 254
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25160D
Abstract: eeprom 25080
Text: CAT25080, CAT25160 8-Kb and 16-Kb SPI Serial CMOS EEPROM Description The CAT25080/25160 are 8−Kb/16−Kb Serial CMOS EEPROM devices internally organized as 1024x8/2048x8 bits. They feature a 32−byte page write buffer and support the Serial Peripheral Interface
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Original
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CAT25080,
CAT25160
16-Kb
CAT25080/25160
8-Kb/16-Kb
1024x8/2048x8
32-byte
751BD
517AW
25160D
eeprom 25080
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27S191
Abstract: 27S291 ls291 27S190 27S29
Text: Am27S190/27S191/PS191/LSl91 Am 27S290/27S291/PS291/LS291 16,384-Bit 2048x8 Bipolar PROM • Fast access time allows high system speed 50% power savings on deselected parts — enhances reliability through total system heat reduction (27PS devices) Plug in replacem ent for industry standard product — no
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Am27S190/27S191/PS191/LSl91
27S290/27S291/PS291/LS291
384-Bit
2048x8)
Am27S190/27S191/PS191/LS191
27S17LS291,
Am27PS191
Am27PS291
Am27S290/27S291/PS291/LS291
BD006340
27S191
27S291
ls291
27S190
27S29
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Am27C291
Abstract: No abstract text available
Text: ADV M IC R O 14E D I MEMORY 0 5 S 7 S a a 0 0 2 7 7 0 0 _4 | -z s A m 2 7 C 1 9 1 /A m 2 7 C 2 9 1 16,384-Bit 2048x8) High-Performance CMOS PROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS High-speed <25 ns)/Low-Power (60 mA) C M O S E P R O M Technology
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384-Bit
2048x8)
300-mll
Am27C291
600-mll
Am27C191
Am27C191/Am27C291
0176A-6
T-46-13-29
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xicor X2816A
Abstract: X2816AM X2816A X2816AM-35 X2816AM-45 x2816
Text: t 16K Military X2816AM a r ç 2048x8 Bit _ Electrically Erasable PROM_ FEATURES • Simple Byte Write Operation —No High Voltages Necessary —Single TTL Level WE Signal Modifies Data
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X2816AM
2048x8
X2816A
X2816AM
xicor X2816A
X2816AM-35
X2816AM-45
x2816
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a7w 80
Abstract: W2416-70L a7w 16 W2416 W2416-10L W2416K-70 A7W 13 a7w 35 a7w 60 A7W AG
Text: Al/G 1 5 IttZ W2416 IVinbond 2K X 8 CMOS STATIC RAM DESCRIPTION FEATURES The W2416 is a High Speed, Low Power CMOS • Low Power Consumption : Active : 250mW Typ. Static RAM Organized as 2048X8 Bits Standby : 10/zW(Typ.)- L-Version Operates on a Single 5-Volt Supply. It is
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W2416
250mW
10/zW
W2416
2048X8
B-1930
a7w 80
W2416-70L
a7w 16
W2416-10L
W2416K-70
A7W 13
a7w 35
a7w 60
A7W AG
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27S45
Abstract: 27S47A AM27S45A AM27S45 27S45A AM27S47A am27s47 27S45SA 27s47 AM27S45SA
Text: Am27S45/27S45A/27S45SA Am27S47/27S47A/27S47SA AdJfed 16,384-Bit 2048x8 Bipolar Registered PROM with Programmable INITIALIZE Input Micro vices DISTINCTIVE CHARACTERISTICS • • • "S A " version offers superior performance with 25 ns setup time and 10 ns clock-to-output delay
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27S45/27S45
/27S45S
Am27S47/27S47A/27S47SA
384-Bit
2048x8)
24-pin,
300-mil
Am27S45
Am27S47
Am27S45/27S45A/27S45SA
27S45
27S47A
AM27S45A
27S45A
AM27S47A
27S45SA
27s47
AM27S45SA
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Untitled
Abstract: No abstract text available
Text: ADV MICRO M E M OR Y 1ME D | 0257553 0 0 2 7 5=1 0 1 | A m 9 1 2 8 2048x8 Static RAM Devices DISTIN C TIVE CHARA CTERISTICS • • • Logic voltage levels compatible with TTL Three-state output buffers and common I /O Ice Max., as low as 100 mA • • ¡AA^ACS as low as 70 ns
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2048x8
Am9128
384-bit
OPOOO66O
OP000690
OPOOO68O
OP00067Ã
OP000650
OP000640
OP000710
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AM27S45
Abstract: 27s47 am27s47 AM27S45A am27s47a 27S45 27S47A 27S45A AM27S45s Am27S47/27S47A
Text: Am27S45/27S45A/27S45SA Am27S47/27S47A/27S47SA 7J Advanced 16,384-Bit 2048x8 Bipolar Registered PROM with Programmable INITIALIZE Input D Micro evices DISTINCTIVE CHARACTERISTICS • • • "S A " version offers superior performance with 25 ns setup time and 1 0 ns clock-to-output delay
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Am27S45/27S45A/27S45SA
Am27S47/27S47A/27S47SA
384-Bit
2048x8)
24-pin,
300-mil
Am27S45
Am27S47
27s47
AM27S45A
am27s47a
27S45
27S47A
27S45A
AM27S45s
Am27S47/27S47A
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27S45
Abstract: AM27S45
Text: Am27S45/Am27S47 a 16,384-Bit 2048x8 Bipolar Registered PROM with Programmable INITIALIZE Input DISTINCTIVE CHARACTERISTICS "S A " version offers superior performance with 25 ns setup time and 10 ns ciock-to-output delay* Slim, 24-pin, 300-mil lateral center package occupies
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Am27S45/Am27S47
384-Bit
2048x8)
24-pin,
300-mil
Am27S45
Am27S47
progra03186
27S45SA*
27S47SA*
27S45
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Untitled
Abstract: No abstract text available
Text: a Am9128 AduS 2048x8 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • Logic voltage levels compatible with TTL Three-state output buffers and common I/O Ice Max., as low as 100 mA • • tAA^ACS as low as 70 ns Power-Down mode Isb as low as 15 mA
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Am9128
2048x8
Am9128
384-bit
24-pin
OP000640
OP000650
OP000660
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AM27S191
Abstract: 27ps191 AM27S291PC AM27S291 AMD PROM Selector guide 27ps291 LS00 5188
Text: a Am27S191 /SI 91A/S191SA/PS191 /PS191A Am27S291 /S291A/S291SA/PS291 /PS291A Advanced Micro Devices 16,384-Bit 2048x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS Piatinum-Silicide fuses guarantee high reliability, fast programming and exceptionally high programming
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Am27S191/S191A/S191SA/PS191
/PS191A
Am27S291
/S291A/S291SA/PS291
/PS291A
384-Bit
2048x8)
Am27S191
/S191
27ps191
AM27S291PC
AMD PROM Selector guide
27ps291
LS00
5188
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53RA1681
Abstract: No abstract text available
Text: 2048x8 Registered PROM 5 3 /6 3 R A 1 6 8 1 5 3 / 63R A 1681A with Asynchronous Enable Features/B enefits O rdering Inform ation • Synchronous output enable MEMORY • Edge-triggered “D” registers PACKAGE DEVICE TYPE SIZE PERFORMANCE PINS TYPE • Versatile 1:16 user programmable initialization words
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2048x8
24-pin
53RA1681
63RA1681
53RA1681A
63RA1681A
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Untitled
Abstract: No abstract text available
Text: •> GOULD AMI Semiconductors S6516 Preliminary Data Sheet 16,384 BIT 2048x8 STATIC CMOS RAM February 1985 Features □ Fast Access Time □ Low Power Standby □ Low Power Operation □ On-Chip Address Registers □ Low Voltage Data Retention -2 V □ Fully TTL Compatible Inputs
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S6516
2048x8)
S6516
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2048x8 RAM
Abstract: 6216 static ram
Text: GEC PLESSEY m a 6H 6/6216 Radiation Hard 2048x8 Bit Static RAM S10307FDS Issue 1.5 O ctober 1990 Features • 3pm CMOS-SOS technology • Latch up free • Fast access time 110ns MA6116 and 85ns (MA6216) typical • Total dose 1.5x10s rad (Si) • Transient upset 5x1010 rad (Si) /sec
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2048x8
S10307FDS
110ns
MA6116)
MA6216)
5x10s
5x1010
100pA
ma6H6/6216
2048x8 RAM
6216 static ram
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53RS1681A
Abstract: 128X128 53RS1681 63RS1681 63RS1681A 98GENERAL
Text: a 53/63RS1681/A Advanced Micro Devices 2048x8 High Performance Registered PROM with Synchronous Enable APPLICATIONS FEATURES/BENEFITS • Synchronous output enable • Microprogram control store • Edge-triggered “D” registers • Versatile 1:16 user programmable Initialization
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53/63RS1681/A
2048x8
24-pln
53/63RS1681
53/63RS1681A
-30pF.
53/63RS1681/A
53RS1681A
128X128
53RS1681
63RS1681
63RS1681A
98GENERAL
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27S291
Abstract: 27s191 AM27LS191 Am27S
Text: Am27S190/27Sl91/PS191/LS191 Am 27S290/27S291 /PS291 /LS291 16,384-Bit 2048x8 Bipolar PROM Piatinum-Silicide fuses guarantee high reliability, fast programming and exceptionally high programming yields (typ > 98%) Voltage and temperature compensated providing ex
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Am27S190/27Sl91/PS191/LS191
27S290/27S291
/PS291
/LS291
384-Bit
2048x8)
Am27S190/27S191/PS191/LS191
Am27S190/191
2048-words
Am27PSXXX
27S291
27s191
AM27LS191
Am27S
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eprom 2716
Abstract: S6831B
Text: ANI _ S6831B AMERICAN M IC R O S Ÿ S ÎÊ M S riN C .^— — 16,384 BIT 2048x8 STATIC NMOS ROM Features General Description 11 Single + 5V Power Supply The AMI S6831B is a 16,384 bit mask programmable Read-Only-Memory offering fully static operation with a
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S6831B
2048x8)
450ns
S6831B
S6813B
113000049E9F10320F0493139F72000F5E0F00126
eprom 2716
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rom 2716
Abstract: memory EPROM 2708 eprom 2716 2708 eprom 2716 eprom 128X128
Text: 16,384 Bit 2048x8 Static NMOS ROM •> GOULD Electronics S68A316 Features General Description □ F a s t A d d re s s A c c e s s Tim e: S 68A 316 - 350ns Maxim um □ E P R O M Pin C o m p a tib le The G ould S 6 8 3 1 6 fam ily of 16,384 bit m ask program m a
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2048x8)
S68A316
S68A316
350ns
S68316
rom 2716
memory EPROM 2708
eprom 2716
2708 eprom
2716 eprom
128X128
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AM9128-10
Abstract: AM9128-12 AM9128-15 AM9128-20 AM9128-70 AM9128-90
Text: Am9128 2048x8 Static RAM DISTINCTIVE CHARACTERISTICS Logic voltage levels compatible with TTL Three-state output buffers and common I/O ic e Max., as low as 100 mA • • tAA/ t ACS as low as 70 ns Power-Down mode lSB as low as 15 mA ' GENERAL DESCRIPTION
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Am9128
2048x8
384-bit
24-pin
OP000650
QP000660
OP000670
AM9128-10
AM9128-12
AM9128-15
AM9128-20
AM9128-70
AM9128-90
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