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    201N09 Price and Stock

    TT electronics / BI Technologies PSS220N201N09B502

    Res, 5K, 20%, 0.025W, Linear; Slide Potentiometer Type:Slim Type - Open Frame With Led; Track Resistance:5Kohm; Resistance Tolerance:± 20%; Power Rating:25Mw; Track Taper:Linear; Potentiometer Mounting:Through Hole; Product Width:7Mmrohs Compliant: Yes |Tt Electronics/bi Technologies PSS220N201N09B502
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark PSS220N201N09B502 Bulk 1,044
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    TT electronics / BI Technologies PSS220N201N09W103

    Res, 10K, 20%, 0.025W, Logarithmic; Slide Potentiometer Type:Slim Type - Open Frame With Led; Track Resistance:10Kohm; Resistance Tolerance:± 20%; Power Rating:25Mw; Track Taper:Log (Audio); Potentiometer Mounting:Through Hole Rohs Compliant: Yes |Tt Electronics/bi Technologies PSS220N201N09W103
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark PSS220N201N09W103 Bulk 1,044
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    201N09 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    201N09 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF

    201N09 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DE150-201N09A

    Abstract: 201N09 PIN diode SPICE model DE-150
    Text: DE150-201N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200


    Original     		PDF DE150-201N09A 201N09 1100P DE150-201N09A PIN diode SPICE model DE-150

    nec 2401

    Abstract: 201N09 DE150-201N09A
    Text: DE150-201N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF DE150-201N09A IS201N09 1100P nec 2401 201N09 DE150-201N09A

    nec 2401

    Abstract: Directed Energy QGS 80W 30 ohm mosfet High-Speed Switching 100mhz 201N09 DE150-201N09A Directed
    Text: Directed Energy, Inc. An DE150-201N09A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR


    Original     		PDF DE150-201N09A 1100P nec 2401 Directed Energy QGS 80W 30 ohm mosfet High-Speed Switching 100mhz 201N09 DE150-201N09A Directed

    Untitled

    Abstract: No abstract text available
    Text: DE150-201N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF DE150-201N09A 201N09 1100P

    201N09

    Abstract: DE-150
    Text: PRELIMINARY SPECIFICATIONS DE-150 201N09 9A, 200V, 0.40Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com


    Original     		PDF DE-150 201N09 150oC 201N09

    nec 2401

    Abstract: DE150-101N09A PIN diode SPICE model 101N09A
    Text: DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF DE150-101N09A 1100P nec 2401 DE150-101N09A PIN diode SPICE model 101N09A

    nec 2401

    Abstract: QGS 80W 30 ohm Directed Energy DE150-101N09A 201N09
    Text: Directed Energy, Inc. An DE150-101N09A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR


    Original     		PDF DE150-101N09A 1100P nec 2401 QGS 80W 30 ohm Directed Energy DE150-101N09A 201N09

    high power rf 10kW

    Abstract: HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w DE-150 3RH1140-1AD00 101N30 102N02
    Text: T H E P U L S E O F T H E F U T U R E DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 Series are the lowest power devices in the DE-Series family. However, their speed and frequency are the highest. The upper operational frequency of the DE-150 Series is approximately 110MHz. The switching speed of the device family is on the order


    Original     		PDF DE-150 DE-150 110MHz. DE-375X2 102N20 501N40 high power rf 10kW HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w 3RH1140-1AD00 101N30 102N02

    501N04

    Abstract: DE-275 101N30 5kw power amplifier amplifier 1000W 8 DE-375 101N09 DE-275 Directed Energy 101N30 102N05
    Text: e DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 SERIES are the lowest power devices in the D E-SERIES family. However their speed and frequency are the highest. The upper operational frequency of the DE-150 SERIES is approximately 110MHz. The switching speed of the device


    OCR Scan     		PDF DE-150 110MHz. 501N04 30MHz. DE-375 102N10 501N21 DE-275 101N30 5kw power amplifier amplifier 1000W 8 101N09 DE-275 Directed Energy 101N30 102N05