BZX85C12V
Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes
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Original
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DO-15
DO-201AD
O-220AC
T0202-3
STGP3NB60HD*
STGP7NB60HD*
STGP3NB60HD
STGP7NB60HD
BZX85C12V
TOSHIBA 2N3055
bta41-600b application
BTA41-600B firing circuit
TAB 429 H toshiba
BZX85C20V
SCR tyn612 pin configuration
picaxe
TYN612 specification
2SA1085E
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PDF
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diode 1000V 10a
Abstract: 200v 1.5v 3a diode TO-220aB 11A diode 6A 1000v DIODE 2A 400V TO-220aB rr 4045AV
Text: Power Devices High Speed, M edium Voltage Transistors in o r d e r o f c u rr e n t rating VCE (sat) max. at le max. at Iq Package Outline •cfDO*1* v CBO v CEO BU 406 BU407 TO-220AB 7A 400V 300V 200V 100V 1V at 5A 750ns at 5A BUV28 BUV28A TO-220AB 12A
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OCR Scan
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O-220AB
O-220AB
750ns
BU407
BUV28
BUV28A
BUV27
BUV27A
diode 1000V 10a
200v 1.5v 3a diode
TO-220aB 11A
diode 6A 1000v
DIODE 2A 400V
TO-220aB rr
4045AV
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PDF
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Q67040-S4340
Abstract: SKA06N60
Text: SKA06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKA06N60
O-220,
O-220-3-31
Q67040-S4340
Aug-00
Q67040-S4340
SKA06N60
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PDF
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FAST RECOVERY DIODE 200ns 8A 40V
Abstract: 6A, 100v fast recovery diode Q67040-S4340 SKA06N60 200v 1.5v 3a diode 400v 3a low vf diode
Text: Preliminary SKA06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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Original
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SKA06N60
O-220,
O-220-3-31
Q67040-S4340
Apr-00
FAST RECOVERY DIODE 200ns 8A 40V
6A, 100v fast recovery diode
Q67040-S4340
SKA06N60
200v 1.5v 3a diode
400v 3a low vf diode
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PDF
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K06N60
Abstract: fast recovery diode 2a trr 200ns SKB02N60
Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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Original
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SKB02N60
P-TO-263-3-2
O-263AB)
K06N60
fast recovery diode 2a trr 200ns
SKB02N60
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PDF
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K06N60
Abstract: fast recovery diode 2a trr 200ns PG-TO-220-3-1 SKP02N60
Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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Original
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SKP02N60
PG-TO-220-3-1
O-220AB)
K06N60
fast recovery diode 2a trr 200ns
PG-TO-220-3-1
SKP02N60
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PDF
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Untitled
Abstract: No abstract text available
Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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Original
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SKP02N60
PG-TO-220-3-1
O-220AB)
SKP02N60
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PDF
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fast recovery diode 2a trr 200ns
Abstract: fast recovery diode 1a trr 200ns K06N60 Q67040-S4214
Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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Original
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SKP02N60
PG-TO-220-3-1
O-220AB)
SKP02N60
fast recovery diode 2a trr 200ns
fast recovery diode 1a trr 200ns
K06N60
Q67040-S4214
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PDF
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K06N60
Abstract: SKB02N60 200v 1.5v 3a diode 400v 3a low vf diode
Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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Original
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SKB02N60
P-TO-220-3-45
K06N60
SKB02N60
200v 1.5v 3a diode
400v 3a low vf diode
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PDF
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Untitled
Abstract: No abstract text available
Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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Original
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SKB02N60
SKB02N60
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PDF
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Untitled
Abstract: No abstract text available
Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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Original
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SKP02N60
PG-TO-220-3-1
O-220AB)
SKP02N60
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PDF
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Untitled
Abstract: No abstract text available
Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 s Designed for: - Motor controls
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SKP02N60
PG-TO-220-3-1
O-220AB)
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PDF
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SKB02N60
Abstract: SKP02N60 200v 1.5v 3a diode
Text: SKP02N60 SKB02N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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Original
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SKP02N60
SKB02N60
O-220AB
Q67040-S4214
O-263AB
Q67040-S4215
Mar-00
SKB02N60
SKP02N60
200v 1.5v 3a diode
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PDF
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K06N60
Abstract: SKB02N60 PG-TO-263-3-2
Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,
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SKB02N60
PG-TO-263-ain
K06N60
SKB02N60
PG-TO-263-3-2
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PDF
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SKB02N60
Abstract: SKP02N60
Text: SKP02N60 Preliminary SKB02N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:
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Original
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SKP02N60
SKB02N60
O-220AB
Q67040-S4214
O-263AB
Q67040-S4215
Aug-99
SKB02N60
SKP02N60
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PDF
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SKB06N60
Abstract: 25E-4 Q67040-S4230 Q67040-S4231 SKP06N60
Text: SKP06N60 Preliminary SKB06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:
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Original
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SKP06N60
SKB06N60
O-220AB
Q67040-S4230
O-263AB
Q67040-S4231
Aug-99
SKB06N60
25E-4
Q67040-S4230
Q67040-S4231
SKP06N60
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PDF
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Q67040-S4215
Abstract: SKB02N60 SKP02N60
Text: SKP02N60 SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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Original
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SKP02N60
SKB02N60
P-TO-220-3-1
O-220AB)
P-TO-263-3-2
O-263AB)
Jul-02
Q67040-S4215
SKB02N60
SKP02N60
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PDF
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Untitled
Abstract: No abstract text available
Text: SKP02N60 SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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Original
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SKP02N60
SKB02N60
SKB02N60
O-220AB
O-263AB
Q67040-S4214
Q67040-S4215
Dec-01
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PDF
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K06N60
Abstract: PG-TO-263-3-2 SKB06N60
Text: SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,
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Original
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SKB06N60
PG-TO-263-ain
K06N60
PG-TO-263-3-2
SKB06N60
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PDF
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Q67040-S4230
Abstract: SKP06N60 25E-4 Q67040-S4231 SKB06N60 mar 716
Text: SKP06N60 SKB06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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Original
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SKP06N60
SKB06N60
O-220AB
Q67040-S4230
O-263AB
Q67040-S4231
Mar-00
Q67040-S4230
SKP06N60
25E-4
Q67040-S4231
SKB06N60
mar 716
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PDF
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Untitled
Abstract: No abstract text available
Text: SKP06N60 SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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Original
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SKP06N60
SKB06N60
SKB06N60
O-220AB
O-263AB
Q67040-S4230
Q67040-S4231
Dec-01
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PDF
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Untitled
Abstract: No abstract text available
Text: SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 s Designed for frequency inverters for washing machines,
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SKB06N60
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PDF
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K06N60
Abstract: TO220 package infineon K06N60 SMD
Text: SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls, Inverter
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Original
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SKB06N60
O-220,
SKB06N60
K06N60
TO220 package infineon
K06N60 SMD
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PDF
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K06N60
Abstract: No abstract text available
Text: SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls, Inverter
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Original
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SKB06N60
O-220,
SKB06N60
K06N60
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PDF
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