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    200V 1.5V 3A DIODE Search Results

    200V 1.5V 3A DIODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    200V 1.5V 3A DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


    Original     		PDF DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E

    Q67040-S4340

    Abstract: SKA06N60
    Text: SKA06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		PDF SKA06N60 O-220, O-220-3-31 Q67040-S4340 Aug-00 Q67040-S4340 SKA06N60

    FAST RECOVERY DIODE 200ns 8A 40V

    Abstract: 6A, 100v fast recovery diode Q67040-S4340 SKA06N60 200v 1.5v 3a diode 400v 3a low vf diode
    Text: Preliminary SKA06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		PDF SKA06N60 O-220, O-220-3-31 Q67040-S4340 Apr-00 FAST RECOVERY DIODE 200ns 8A 40V 6A, 100v fast recovery diode Q67040-S4340 SKA06N60 200v 1.5v 3a diode 400v 3a low vf diode

    K06N60

    Abstract: fast recovery diode 2a trr 200ns SKB02N60
    Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		PDF SKB02N60 P-TO-263-3-2 O-263AB) K06N60 fast recovery diode 2a trr 200ns SKB02N60

    K06N60

    Abstract: fast recovery diode 2a trr 200ns PG-TO-220-3-1 SKP02N60
    Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		PDF SKP02N60 PG-TO-220-3-1 O-220AB) K06N60 fast recovery diode 2a trr 200ns PG-TO-220-3-1 SKP02N60

    Untitled

    Abstract: No abstract text available
    Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		PDF SKP02N60 PG-TO-220-3-1 O-220AB) SKP02N60

    fast recovery diode 2a trr 200ns

    Abstract: fast recovery diode 1a trr 200ns K06N60 Q67040-S4214
    Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		PDF SKP02N60 PG-TO-220-3-1 O-220AB) SKP02N60 fast recovery diode 2a trr 200ns fast recovery diode 1a trr 200ns K06N60 Q67040-S4214

    K06N60

    Abstract: SKB02N60 200v 1.5v 3a diode 400v 3a low vf diode
    Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		PDF SKB02N60 P-TO-220-3-45 K06N60 SKB02N60 200v 1.5v 3a diode 400v 3a low vf diode

    Untitled

    Abstract: No abstract text available
    Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		PDF SKB02N60 SKB02N60

    Untitled

    Abstract: No abstract text available
    Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		PDF SKP02N60 PG-TO-220-3-1 O-220AB) SKP02N60

    Untitled

    Abstract: No abstract text available
    Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for: - Motor controls


    Original     		PDF SKP02N60 PG-TO-220-3-1 O-220AB)

    SKB02N60

    Abstract: SKP02N60 200v 1.5v 3a diode
    Text: SKP02N60 SKB02N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		PDF SKP02N60 SKB02N60 O-220AB Q67040-S4214 O-263AB Q67040-S4215 Mar-00 SKB02N60 SKP02N60 200v 1.5v 3a diode

    K06N60

    Abstract: SKB02N60 PG-TO-263-3-2
    Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,


    Original     		PDF SKB02N60 PG-TO-263-ain K06N60 SKB02N60 PG-TO-263-3-2

    Untitled

    Abstract: No abstract text available
    Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for frequency inverters for washing machines,


    Original     		PDF SKB02N60

    SKB06N60

    Abstract: 25E-4 Q67040-S4230 Q67040-S4231 SKP06N60
    Text: SKP06N60 Preliminary SKB06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:


    Original     		PDF SKP06N60 SKB06N60 O-220AB Q67040-S4230 O-263AB Q67040-S4231 Aug-99 SKB06N60 25E-4 Q67040-S4230 Q67040-S4231 SKP06N60

    Q67040-S4215

    Abstract: SKB02N60 SKP02N60
    Text: SKP02N60 SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		PDF SKP02N60 SKB02N60 P-TO-220-3-1 O-220AB) P-TO-263-3-2 O-263AB) Jul-02 Q67040-S4215 SKB02N60 SKP02N60

    Untitled

    Abstract: No abstract text available
    Text: SKP02N60 SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		PDF SKP02N60 SKB02N60 SKB02N60 O-220AB O-263AB Q67040-S4214 Q67040-S4215 Dec-01

    K06N60

    Abstract: PG-TO-263-3-2 SKB06N60
    Text: SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,


    Original     		PDF SKB06N60 PG-TO-263-ain K06N60 PG-TO-263-3-2 SKB06N60

    Q67040-S4230

    Abstract: SKP06N60 25E-4 Q67040-S4231 SKB06N60 mar 716
    Text: SKP06N60 SKB06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		PDF SKP06N60 SKB06N60 O-220AB Q67040-S4230 O-263AB Q67040-S4231 Mar-00 Q67040-S4230 SKP06N60 25E-4 Q67040-S4231 SKB06N60 mar 716

    Untitled

    Abstract: No abstract text available
    Text: SKP06N60 SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		PDF SKP06N60 SKB06N60 SKB06N60 O-220AB O-263AB Q67040-S4230 Q67040-S4231 Dec-01

    Untitled

    Abstract: No abstract text available
    Text: SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for frequency inverters for washing machines,


    Original     		PDF SKB06N60

    K06N60

    Abstract: TO220 package infineon K06N60 SMD
    Text: SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls, Inverter


    Original     		PDF SKB06N60 O-220, SKB06N60 K06N60 TO220 package infineon K06N60 SMD

    K06N60

    Abstract: No abstract text available
    Text: SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls, Inverter


    Original     		PDF SKB06N60 O-220, SKB06N60 K06N60

    diode 1000V 10a

    Abstract: 200v 1.5v 3a diode TO-220aB 11A diode 6A 1000v DIODE 2A 400V TO-220aB rr 4045AV
    Text: Power Devices High Speed, M edium Voltage Transistors in o r d e r o f c u rr e n t rating VCE (sat) max. at le max. at Iq Package Outline •cfDO*1* v CBO v CEO BU 406 BU407 TO-220AB 7A 400V 300V 200V 100V 1V at 5A 750ns at 5A BUV28 BUV28A TO-220AB 12A


    OCR Scan     		PDF O-220AB O-220AB 750ns BU407 BUV28 BUV28A BUV27 BUV27A diode 1000V 10a 200v 1.5v 3a diode TO-220aB 11A diode 6A 1000v DIODE 2A 400V TO-220aB rr 4045AV