E72873
Abstract: 15-06KC5
Text: FMD 15-06KC5 FDM 15-06KC5 Advanced Technical Information ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω CoolMOS 1) Power MOSFET with HiPerDyn ™ FRED Buck and Boost Topologies Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode
|
Original
|
PDF
|
15-06KC5
15IISOL
20080523b
E72873
15-06KC5
|
10N60C
Abstract: IXKP10N60C5
Text: IXKP 10N60C5 CoolMOS 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS
|
Original
|
PDF
|
10N60C5
O-220
20080523b
10N60C
IXKP10N60C5
|
47n60
Abstract: 47N60C 47N60C5 IXKR E72873 v1207v ixkr47n60c5
Text: IXKR 47N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 45 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge
|
Original
|
PDF
|
47N60C5
ISOPLUS247TM
E72873
20080523b
47n60
47N60C
47N60C5
IXKR
E72873
v1207v
ixkr47n60c5
|
Untitled
Abstract: No abstract text available
Text: IXKR 47N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 45 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS247TM
|
Original
|
PDF
|
47N60C5
ISOPLUS247TM
E72873
20080523b
|
13N60
Abstract: 13n60c5 13n60c L-14045
Text: IXKP 13N60C5 CoolMOS 1 Power MOSFET ID25 = 13 A VDSS = 600 V RDS on) max = 0.3 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB (IXKP) G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings
|
Original
|
PDF
|
13N60C5
O-220
20080523b
13N60
13n60c5
13n60c
L-14045
|