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Catalog Datasheet	MFG & Type	Document Tags	PDF
E72873 Abstract: 15-06KC5 Text: FMD 15-06KC5 FDM 15-06KC5 Advanced Technical Information ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω CoolMOS 1) Power MOSFET with HiPerDyn ™ FRED Buck and Boost Topologies Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode	Original	15-06KC5 15IISOL 20080523b E72873 15-06KC5	PDF
10N60C Abstract: IXKP10N60C5 Text: IXKP 10N60C5 CoolMOS 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS	Original	10N60C5 O-220 20080523b 10N60C IXKP10N60C5	PDF
47n60 Abstract: 47N60C 47N60C5 IXKR E72873 v1207v ixkr47n60c5 Text: IXKR 47N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 45 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	47N60C5 ISOPLUS247TM E72873 20080523b 47n60 47N60C 47N60C5 IXKR E72873 v1207v ixkr47n60c5	PDF
Untitled Abstract: No abstract text available Text: IXKR 47N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 45 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS247TM	Original	47N60C5 ISOPLUS247TM E72873 20080523b	PDF
13N60 Abstract: 13n60c5 13n60c L-14045 Text: IXKP 13N60C5 CoolMOS 1 Power MOSFET ID25 = 13 A VDSS = 600 V RDS on) max = 0.3 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB (IXKP) G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	13N60C5 O-220 20080523b 13N60 13n60c5 13n60c L-14045	PDF