1020 mosfet
Abstract: LTP50N06
Text: LTP50N06 N-Channel 60V Power MOSFET VDS=60V Vgs@10V, RDS ON ≦ 22mΩ FEATURES Minimize input capacitance and gate charge Specially designed for DC/DC converters and DC motor control PIN CONFIGURATION (TO-220) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
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LTP50N06
O-220)
O-220
1020 mosfet
LTP50N06
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Untitled
Abstract: No abstract text available
Text: LT2306A N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2306A is the N-Channel logic enhancement mode power field ● RDS ON =30mΩ@VGS=10V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)=35mΩ@VGS=4.5V
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LT2306A
LT2306A
2007-Ver4
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Dual N-Channel MOSFET SOP8
Abstract: LT4936
Text: LT4936 Dual N-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4936 is the Dual N-Channel logic enhancement ● RDS ON ≦36mΩ@VGS=10V mode power field effect transistors are produced using ● RDS(ON)≦45mΩ@VGS=4.5V high cell density, DMOS trench technology. This high
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LT4936
LT4936
2007-Ver4
Dual N-Channel MOSFET SOP8
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P-Channel mosfet 40V
Abstract: Vgs 40V mosfet
Text: LT4565 N- and P-Channel 40-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4565 is the N- and P-Channel logic enhancement mode ● RDS ON ≦40mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦45mΩ@VGS=4.5V (N-Ch)
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LT4565
LT4565
2007-Ver4
P-Channel mosfet 40V
Vgs 40V mosfet
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1020 mosfet
Abstract: LTP50N06
Text: LTP50N06 N-Channel 60V Power MOSFET VDS=60V Vgs@10V, RDS ON ≦ 20mΩ FEATURES Minimize input capacitance and gate charge Specially designed for DC/DC converters and DC motor control PIN CONFIGURATION (TO-220) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
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LTP50N06
O-220)
300us,
2007-Ver1
O-220
1020 mosfet
LTP50N06
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20107
Abstract: No abstract text available
Text: LT4544 N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4544 is the N- and P-Channel logic enhancement mode ● RDS ON ≦28mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦42mΩ@VGS=4.5V (N-Ch)
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LT4544
LT4544
2007-Ver4
20107
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mosfet tv lcd
Abstract: No abstract text available
Text: LT4544C N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4544C is the N- and P-Channel logic enhancement mode ● RDS ON ≦28mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦42mΩ@VGS=4.5V (N-Ch)
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LT4544C
LT4544C
2007-Ver4
mosfet tv lcd
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LT4542C
Abstract: No abstract text available
Text: LT4542C N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4542C is the N- and P-Channel logic enhancement mode ● 30V/6.7A,RDS ON =25mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● 30V/5.0A,RDS(ON)=40mΩ@VGS=4.5V (N-Ch)
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LT4542C
LT4542C
-30V/-6
-30V/-5
2007-Ver4
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Marking Code k72
Abstract: code k72 k72 diode K72 marking diode LT2N7002D
Text: LT2N7002D N-Channel Power MOSFET – ESD GENERAL DESCRIPTION FEATURES The LT2N7002D is the N-Channel logic enhancement mode power ● Simple Drive Requirement field effect transistors are produced using high cell density , DMOS ● Small Package Outline trench technology. This high density process is especially tailored to
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LT2N7002D
LT2N7002D
200mA
200mA,
OT-23
Marking Code k72
code k72
k72 diode
K72 marking diode
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Untitled
Abstract: No abstract text available
Text: LT4544C N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4544C is the N- and P-Channel logic enhancement mode ● RDS ON ≦28mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦42mΩ@VGS=4.5V (N-Ch)
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LT4544C
LT4544C
2007-Ver4
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sep 67a
Abstract: sep 61a LT4542C
Text: LT4542C N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4542C is the N- and P-Channel logic enhancement mode ● 30V/6.7A,RDS ON =25mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● 30V/5.0A,RDS(ON)=40mΩ@VGS=4.5V (N-Ch)
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LT4542C
LT4542C
-30V/-6
-30V/-5
2007-Ver3
sep 67a
sep 61a
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LT4936
Abstract: No abstract text available
Text: LT4936 Dual N-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4936 is the Dual N-Channel logic enhancement ● RDS ON ≦36mΩ@VGS=10V mode power field effect transistors are produced using ● RDS(ON)≦45mΩ@VGS=4.5V high cell density, DMOS trench technology. This high
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LT4936
LT4936
300us,
2007-Ver4
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ME4565
Abstract: p-channel DMOS
Text: ME4565 N- and P-Channel 40-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4565 is the N- and P-Channel logic enhancement mode ● RDS ON ≦40mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦45mΩ@VGS=4.5V (N-Ch)
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ME4565
LT4565
2007-Ver4
ME4565
p-channel DMOS
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LT4946
Abstract: Dual N-Channel MOSFET SOP8 60V dual N-Channel trench mosfet inverter ccfl
Text: LT4946 Dual N-Channel 60-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4946 is the Dual N-Channel logic enhancement mode power ● RDS ON ≦41mΩ@VGS=10V field effect transistors are produced using high cell density, DMOS ● RDS(ON)≦52mΩ@VGS=4.5V
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LT4946
LT4946
300us,
2007-Ver4
Dual N-Channel MOSFET SOP8
60V dual N-Channel trench mosfet
inverter ccfl
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LR6209B
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High PSRR Low Dropout Voltage 250mA CMOS LDO Regulator LR6209 Series INTRODUCTION FEATURE The LR6209 Series are a group of positive voltage regulators manufactured by CMOS technologies with high ripple rejection, extremely low power consumption and low
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250mA
LR6209
OT-23
OT-89
LR6209
2007Ver
LR6209B
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Untitled
Abstract: No abstract text available
Text: LT4946 Dual N-Channel 60-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4946 is the Dual N-Channel logic enhancement mode power ● RDS ON ≦41mΩ@VGS=10V field effect transistors are produced using high cell density, DMOS ● RDS(ON)≦52mΩ@VGS=4.5V
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LT4946
LT4946
300us,
2007-Ver4
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LT4542
Abstract: No abstract text available
Text: LT4542 N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4542 is the N- and P-Channel logic enhancement mode ● RDS ON ≦25mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦40mΩ@VGS=4.5V (N-Ch)
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LT4542
LT4542
2007-Ver4
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LT4946
Abstract: 60V dual N-Channel trench mosfet LT-494 Dual N-Channel MOSFET SOP8
Text: LT4946 Dual N-Channel 60-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4946 is the Dual N-Channel logic enhancement mode power ● RDS ON ≦41mΩ@VGS=10V field effect transistors are produced using high cell density, DMOS ● RDS(ON)≦52mΩ@VGS=4.5V
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LT4946
LT4946
2007-Ver4
60V dual N-Channel trench mosfet
LT-494
Dual N-Channel MOSFET SOP8
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Ta7070
Abstract: No abstract text available
Text: LT2306A N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2306A is the N-Channel logic enhancement mode power field ● RDS ON =30mΩ@VGS=10V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)=35mΩ@VGS=4.5V
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LT2306A
LT2306A
380us,
2007-Ver4
OT-23
Ta7070
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Untitled
Abstract: No abstract text available
Text: LT2302 N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2302 is the N-Channel logic enhancement mode power field ● RDS ON ≦85mΩ@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON) ≦115mΩ@VGS=2.5V
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LT2302
LT2302
300us,
2007-Ver1
OT-23
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LT4542
Abstract: No abstract text available
Text: LT4542 N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4542 is the N- and P-Channel logic enhancement mode ● RDS ON ≦25mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦40mΩ@VGS=4.5V (N-Ch)
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LT4542
LT4542
2007-Ver4
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LT2302
Abstract: No abstract text available
Text: LT2302 N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2302 is the N-Channel logic enhancement mode power field ● RDS ON ≦85mΩ@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON) ≦115mΩ@VGS=2.5V
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LT2302
LT2302
2007-Ver1
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