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    Untitled

    Abstract: No abstract text available
    Text: LT2302 N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2302 is the N-Channel logic enhancement mode power field ● RDS ON ≦85mΩ@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)≦115mΩ@VGS=2.5V


    Original     		PDF LT2302 LT2302 300us, OT-23

    Untitled

    Abstract: No abstract text available
    Text: LT2302 N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2302 is the N-Channel logic enhancement mode power field ● RDS ON ≦85mΩ@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON) ≦115mΩ@VGS=2.5V


    Original     		PDF LT2302 LT2302 300us, 2007-Ver1 OT-23

    LT2302

    Abstract: No abstract text available
    Text: LT2302 N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2302 is the N-Channel logic enhancement mode power field ● RDS ON ≦85mΩ@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON) ≦115mΩ@VGS=2.5V


    Original     		PDF LT2302 LT2302 2007-Ver1