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    2007V Search Results

    2007V Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    5962-7802007VEA Texas Instruments QML Class V Quadruple Differential Line Receivers 16-CDIP -55 to 125 Visit Texas Instruments Buy
    SF Impression Pixel

    2007V Price and Stock

    OMRON Industrial Automation 3G3MX2-A2007-V1

    VARI FREQ DRIVE 5A 240V LOAD
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    DigiKey 3G3MX2-A2007-V1 Bulk 257 1
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    Littelfuse Inc 0312007.VXP

    FUSE GLASS 7A 250VAC 3AB 3AG
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    DigiKey 0312007.VXP Bulk 6 1
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    RS 0312007.VXP Bulk 10 1
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    Ozdisan Elektronik 0312007.VXP
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    Alpha Wire 892007-VI005

    HOOK-UP STRND 20AWG VIO 100'
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    DigiKey 892007-VI005 5 1
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    Master Electronics 892007-VI005
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    Alpha Wire 892007-VI001

    HOOK-UP STRND 20AWG VIOLET 1000'
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    DigiKey 892007-VI001 4 1
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    Littelfuse Inc 0332007.VXP

    FUSE CERM 7A 250VAC 125VDC 3AB
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    Ozdisan Elektronik 0332007.VXP
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    2007V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1020 mosfet

    Abstract: LTP50N06
    Text: LTP50N06 N-Channel 60V Power MOSFET VDS=60V Vgs@10V, RDS ON ≦ 22mΩ FEATURES Minimize input capacitance and gate charge Specially designed for DC/DC converters and DC motor control PIN CONFIGURATION (TO-220) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)


    Original     		PDF LTP50N06 O-220) O-220 1020 mosfet LTP50N06

    Untitled

    Abstract: No abstract text available
    Text: LT2306A N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2306A is the N-Channel logic enhancement mode power field ● RDS ON =30mΩ@VGS=10V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)=35mΩ@VGS=4.5V


    Original     		PDF LT2306A LT2306A 2007-Ver4

    Dual N-Channel MOSFET SOP8

    Abstract: LT4936
    Text: LT4936 Dual N-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4936 is the Dual N-Channel logic enhancement ● RDS ON ≦36mΩ@VGS=10V mode power field effect transistors are produced using ● RDS(ON)≦45mΩ@VGS=4.5V high cell density, DMOS trench technology. This high


    Original     		PDF LT4936 LT4936 2007-Ver4 Dual N-Channel MOSFET SOP8

    P-Channel mosfet 40V

    Abstract: Vgs 40V mosfet
    Text: LT4565 N- and P-Channel 40-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4565 is the N- and P-Channel logic enhancement mode ● RDS ON ≦40mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦45mΩ@VGS=4.5V (N-Ch)


    Original     		PDF LT4565 LT4565 2007-Ver4 P-Channel mosfet 40V Vgs 40V mosfet

    1020 mosfet

    Abstract: LTP50N06
    Text: LTP50N06 N-Channel 60V Power MOSFET VDS=60V Vgs@10V, RDS ON ≦ 20mΩ FEATURES Minimize input capacitance and gate charge Specially designed for DC/DC converters and DC motor control PIN CONFIGURATION (TO-220) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)


    Original     		PDF LTP50N06 O-220) 300us, 2007-Ver1 O-220 1020 mosfet LTP50N06

    20107

    Abstract: No abstract text available
    Text: LT4544 N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4544 is the N- and P-Channel logic enhancement mode ● RDS ON ≦28mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦42mΩ@VGS=4.5V (N-Ch)


    Original     		PDF LT4544 LT4544 2007-Ver4 20107

    mosfet tv lcd

    Abstract: No abstract text available
    Text: LT4544C N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4544C is the N- and P-Channel logic enhancement mode ● RDS ON ≦28mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦42mΩ@VGS=4.5V (N-Ch)


    Original     		PDF LT4544C LT4544C 2007-Ver4 mosfet tv lcd

    LT4542C

    Abstract: No abstract text available
    Text: LT4542C N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4542C is the N- and P-Channel logic enhancement mode ● 30V/6.7A,RDS ON =25mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● 30V/5.0A,RDS(ON)=40mΩ@VGS=4.5V (N-Ch)


    Original     		PDF LT4542C LT4542C -30V/-6 -30V/-5 2007-Ver4

    Marking Code k72

    Abstract: code k72 k72 diode K72 marking diode LT2N7002D
    Text: LT2N7002D N-Channel Power MOSFET – ESD GENERAL DESCRIPTION FEATURES The LT2N7002D is the N-Channel logic enhancement mode power ● Simple Drive Requirement field effect transistors are produced using high cell density , DMOS ● Small Package Outline trench technology. This high density process is especially tailored to


    Original     		PDF LT2N7002D LT2N7002D 200mA 200mA, OT-23 Marking Code k72 code k72 k72 diode K72 marking diode

    Untitled

    Abstract: No abstract text available
    Text: LT4544C N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4544C is the N- and P-Channel logic enhancement mode ● RDS ON ≦28mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦42mΩ@VGS=4.5V (N-Ch)


    Original     		PDF LT4544C LT4544C 2007-Ver4

    sep 67a

    Abstract: sep 61a LT4542C
    Text: LT4542C N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4542C is the N- and P-Channel logic enhancement mode ● 30V/6.7A,RDS ON =25mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● 30V/5.0A,RDS(ON)=40mΩ@VGS=4.5V (N-Ch)


    Original     		PDF LT4542C LT4542C -30V/-6 -30V/-5 2007-Ver3 sep 67a sep 61a

    LT4936

    Abstract: No abstract text available
    Text: LT4936 Dual N-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4936 is the Dual N-Channel logic enhancement ● RDS ON ≦36mΩ@VGS=10V mode power field effect transistors are produced using ● RDS(ON)≦45mΩ@VGS=4.5V high cell density, DMOS trench technology. This high


    Original     		PDF LT4936 LT4936 300us, 2007-Ver4

    ME4565

    Abstract: p-channel DMOS
    Text: ME4565 N- and P-Channel 40-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4565 is the N- and P-Channel logic enhancement mode ● RDS ON ≦40mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦45mΩ@VGS=4.5V (N-Ch)


    Original     		PDF ME4565 LT4565 2007-Ver4 ME4565 p-channel DMOS

    LT4946

    Abstract: Dual N-Channel MOSFET SOP8 60V dual N-Channel trench mosfet inverter ccfl
    Text: LT4946 Dual N-Channel 60-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4946 is the Dual N-Channel logic enhancement mode power ● RDS ON ≦41mΩ@VGS=10V field effect transistors are produced using high cell density, DMOS ● RDS(ON)≦52mΩ@VGS=4.5V


    Original     		PDF LT4946 LT4946 300us, 2007-Ver4 Dual N-Channel MOSFET SOP8 60V dual N-Channel trench mosfet inverter ccfl

    telemecanique contactor catalogue

    Abstract: LC1 D12 wiring diagram LC1 K12 Schneider telemecanique contactor lc1 d65 Telemecanique LC1 D12 Telemecanique LC1 D38 LC1 D18 wiring diagram LC1 D09 10 wiring diagram ATS01N232QN Schneider contactor catalogue
    Text: Soft starters ATS 01 Catalogue May 07 General contents Soft starters for asynchronous motors 1 – Altistart 01 2 – Altistart U01 1 Contents 1 - Altistart 01 soft starters for asynchronous motors b Presentation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . pages 1/2 and 1/3


    Original     		PDF 05/2007-V2 DIA2ED2040201EN telemecanique contactor catalogue LC1 D12 wiring diagram LC1 K12 Schneider telemecanique contactor lc1 d65 Telemecanique LC1 D12 Telemecanique LC1 D38 LC1 D18 wiring diagram LC1 D09 10 wiring diagram ATS01N232QN Schneider contactor catalogue

    LR6209B

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High PSRR Low Dropout Voltage 250mA CMOS LDO Regulator LR6209 Series INTRODUCTION FEATURE The LR6209 Series are a group of positive voltage regulators manufactured by CMOS technologies with high ripple rejection, extremely low power consumption and low


    Original     		PDF 250mA LR6209 OT-23 OT-89 LR6209 2007Ver LR6209B

    Untitled

    Abstract: No abstract text available
    Text: LT4946 Dual N-Channel 60-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4946 is the Dual N-Channel logic enhancement mode power ● RDS ON ≦41mΩ@VGS=10V field effect transistors are produced using high cell density, DMOS ● RDS(ON)≦52mΩ@VGS=4.5V


    Original     		PDF LT4946 LT4946 300us, 2007-Ver4

    LT4542

    Abstract: No abstract text available
    Text: LT4542 N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4542 is the N- and P-Channel logic enhancement mode ● RDS ON ≦25mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦40mΩ@VGS=4.5V (N-Ch)


    Original     		PDF LT4542 LT4542 2007-Ver4

    LT4946

    Abstract: 60V dual N-Channel trench mosfet LT-494 Dual N-Channel MOSFET SOP8
    Text: LT4946 Dual N-Channel 60-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4946 is the Dual N-Channel logic enhancement mode power ● RDS ON ≦41mΩ@VGS=10V field effect transistors are produced using high cell density, DMOS ● RDS(ON)≦52mΩ@VGS=4.5V


    Original     		PDF LT4946 LT4946 2007-Ver4 60V dual N-Channel trench mosfet LT-494 Dual N-Channel MOSFET SOP8

    Ta7070

    Abstract: No abstract text available
    Text: LT2306A N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2306A is the N-Channel logic enhancement mode power field ● RDS ON =30mΩ@VGS=10V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)=35mΩ@VGS=4.5V


    Original     		PDF LT2306A LT2306A 380us, 2007-Ver4 OT-23 Ta7070

    Untitled

    Abstract: No abstract text available
    Text: LT2302 N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2302 is the N-Channel logic enhancement mode power field ● RDS ON ≦85mΩ@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON) ≦115mΩ@VGS=2.5V


    Original     		PDF LT2302 LT2302 300us, 2007-Ver1 OT-23

    LT4542

    Abstract: No abstract text available
    Text: LT4542 N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4542 is the N- and P-Channel logic enhancement mode ● RDS ON ≦25mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦40mΩ@VGS=4.5V (N-Ch)


    Original     		PDF LT4542 LT4542 2007-Ver4

    LT2302

    Abstract: No abstract text available
    Text: LT2302 N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2302 is the N-Channel logic enhancement mode power field ● RDS ON ≦85mΩ@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON) ≦115mΩ@VGS=2.5V


    Original     		PDF LT2302 LT2302 2007-Ver1