200 WATTS AUDIO AMP POWER TRANSISTORS PNP Search Results

200 WATTS AUDIO AMP POWER TRANSISTORS PNP Result Highlights (5)

Part	Manufacturer	Description
MGN1S1208MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-8V GAN
MGN1D120603MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-6/-3V GAN
MGN1S1212MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-12V GAN
MGN1S0508MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-8V GAN
MGN1S0512MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-12V GAN

200 WATTS AUDIO AMP POWER TRANSISTORS PNP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
power transistors cross reference Abstract: motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE Text: Bipolar Power Transistors In Brief . . . Motorola’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3 and TO–264. New products	Original	MJW16212 225AA) MJE13003 BUH51 power transistors cross reference motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE	PDF
NPN MATCHED PAIRS Abstract: 200 watts audio amp power transistors pnp NPN pnp MATCHED PAIRS NTE388 NTE61 NTE60 NTE6061 PNP 5GHz t0202 NTE58 Text: BI-POLAR TRANSISTORS NTE TVpe Number Polarity and Material Description and Application 59 PNP-Si High Pwr Audio Output Compl to N TE 58 60 NPN-Si High Pwr Audio, Disk Head , Positioner, Linear Applications (Compl to NTE61) 60MP NPN-Si Matched Pair of NTE60	OCR Scan	NTE58) NTE61) NTE60 NTE60) NTE88) NTE87 NTE87) NTE88 b43125ci NPN MATCHED PAIRS 200 watts audio amp power transistors pnp NPN pnp MATCHED PAIRS NTE388 NTE61 NTE60 NTE6061 PNP 5GHz t0202 NTE58	PDF
332MCP Abstract: NTE307 27MHz rf transmitter NTE332 T0202 NTE297 NTE300 T072 T092 297MP Text: Bt-POLAR TRANSISTORS NTE Type Number Polarity and Material 297MP NPN-Si 298 PNP-Si Description and Application Matched Pair of NTE297 : » Audio Amp, Driver Compì to NTE297 Collector to Base (Volts) Collector to Emitter (Volts) Emitter Case Style Diag.	OCR Scan	297MP NTE297 NTE297) T0202 NTE307) 300MP NTE300 27MHz) NTE332) 332MCP NTE307 27MHz rf transmitter NTE332 NTE297 NTE300 T072 T092	PDF
200 Ampere power transistor Abstract: motorola MJ15003 bipolar power transistor MJ15003 MJ15004 motorola MJ15001 MJ15001 MJ15003 transistor 50 ampere Motorola Bipolar Power Transistor Device Data MJ15002 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M J15001 PNP M J15002 Com plem entary Silicon Power Transistors The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. • • •	OCR Scan	MJ15001 MJ15002 O-204AA 200 Ampere power transistor motorola MJ15003 bipolar power transistor MJ15003 MJ15004 motorola MJ15001 MJ15003 transistor 50 ampere Motorola Bipolar Power Transistor Device Data	PDF
nte280 Abstract: nte291 Text: BI-POL AR TRANSISTORS NTE Type Number Polarity and Material Description and Application 275 PNP-Si 278 NPN-Si 280 NPN-Si 280MP NPN-Si PNP-Si Darlington Pwr Amp Switch Compl to NTE274 Broad Band RF Amp, CATV/MATV Amp Audio Amp Output (Compl to NTE281) Matched Pair of NTE280	OCR Scan	280MP NTE274) NTE281) NTE280 284MP 281MCP NTE291) 292MCP NTE292 NTE291 nte280 nte291	PDF
JE15030 Abstract: JE15031 JE-15028 je15029 15029 MJE16028 JE-1502 JE15028 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JE15028* M JE15030* PNP M JE 15029* Com plem entary Silicon Plastic Power Transistors . . . designed for use as high-frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes hpE = 40 Min @ lc - 3.0 Ade	OCR Scan	MJE15028, MJE15029 MJE15030, MJE15031 -22OAB MJE15028 JE1S030M JE15029 MJE1S031 MJE15029 JE15030 JE15031 JE-15028 15029 MJE16028 JE-1502 JE15028	PDF
transistor t4 3570 Abstract: 9y transistor transistor 3569 t4 3570 dpak T4 3570 K 3572 transistor jd Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MDM M JD200 Complementary Plastic Power Transistors PNP M JD210 NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low-power, hlgh-galn audio amplifier applications. • Collector-Emltter Sustaining Voltage —	OCR Scan	JD200 JD210 MJD200-1) transistor t4 3570 9y transistor transistor 3569 t4 3570 dpak T4 3570 K 3572 transistor jd	PDF
123AP Abstract: NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130 Text: NTE Electronics Transistors Bi-Polar Transistors Ñ Continued Stock No. Mfr.Õs Type Polarity and Material Description and Application 935-0755 935-0760 935-0840 935-0841 935-0845 935-0855 107 108 123A 123AP 124 126 NPN-Si NPN-Si NPN-Si NPN-Si NPN-Si PNP-Ge	Original	123AP NTE159) NTE396) NTE375) NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130	PDF
Transistor C 3199 Abstract: LADC-100 BD790 BD792 bd791 bd789 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD789 Com plem entary Plastic Silicon Power Transistors BD791 * PNP . . . designed for low power audio amplifier and low-current, high speed switching applications. • • • • BD790 BD792* High Collector-Emitter Sustaining Voltage —	OCR Scan	BD789, BD790 BD791, BD792 BD789 BD791 BD790 BD792* BD791 Transistor C 3199 LADC-100	PDF
TRANSISTOR MJE15031 Abstract: mje15031 Text: ON Semiconductor NPN MJE15028* Complementary Silicon Plastic Power Transistors MJE15030* PNP MJE15029* . . . designed for use as high−frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes • • hFE = 40 Min) @ IC = 3.0 Adc	Original	MJE15028* MJE15030* MJE15029* MJE15031* MJE15028, MJE15029 MJE15030, MJE15031 O-220AB MJE15028 TRANSISTOR MJE15031	PDF
mje243 Abstract: mje253 mje253 transistor 200 watts audio amp power transistors Text: ON Semiconductor NPN MJE243 * PNP MJE253 * Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low−current, high−speed switching applications. *ON Semiconductor Preferred Device • High Collector−Emitter Sustaining Voltage —	Original	MJE243 MJE253 MJE243, MJE253 mje243 mje253 transistor 200 watts audio amp power transistors	PDF
MJE200 Abstract: MJE210 Text: ON Semiconductor NPN MJE200 * PNP MJE210 * Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low−power, high−gain audio amplifier applications. *ON Semiconductor Preferred Device • Collector−Emitter Sustaining Voltage —	Original	MJE200 MJE210 MJE200 MJE210	PDF
MJ15025 Abstract: transistor MJ15025 MJ15023 MJ1502S mj15 1B32A Text: ^ M O S P E C SILICON POWER TRANSISTORS PNP M J150 23 M J1 5 0 2 5 The MJ15023 and MJ15025 are power base power transistors designed for high power audio,disk head positioners and other linear applications. FEA TU RES * High Safe Operating Area * High DC Current GainhFE= 15 Min @lc= 8.0 A VCE=4.0 V	OCR Scan	MJ15023 MJ15025 MJ15025 MJ1502S MJ15025-^ transistor MJ15025 mj15 1B32A	PDF
Untitled Abstract: No abstract text available Text: ON Semiconductor NPN BD787 Complementary Plastic Silicon Power Transistors PNP BD788 . . . designed for lower power audio amplifier and low current, high−speed switching applications. • Low Collector−Emitter Sustaining Voltage — • • 4 AMPERE	Original	BD787 BD788 BD787, BD788 BD787	PDF

BD787 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD787 Com plem entary Plastic Silicon Power Transistors PNP BD788 . . . designed for lower power audio amplifier and low current, high-speed switching applications. • • • 4 AMPERE POWER TRANSISTORS COMPLEMENTARY	OCR Scan	BD787, BD788 BD787 BD788 BD787 Cto150°	PDF
2n6031 Abstract: 2n5631 Text: ON Semiconductort NPN High−Voltage − High Power Transistors 2N5631 PNP 2N6031 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage − • • 16 AMPERE	Original	2N5631 2N6031 2n6031	PDF
transistor m 1104 Abstract: je210 MJE200 Text: MOTOROLA Order this document by MJE200/D SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Plastic Transistors NPN M JE 200* PNP M JE 210* . . . designed for low voltage, low-power, high—gain audio amplifier applications. • • • • • C ollector-Em itter Sustaining Voltage —	OCR Scan	MJE200/D O-225AA transistor m 1104 je210 MJE200	PDF
NPN 200 VOLTS POWER TRANSISTOR Abstract: MJ15002 200 watts audio amp power transistors transistor tl 187 MJ15001 motorola MJ15001 Text: MOTOROLA Order this document by MJ15001/D SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Transistors NPN MJ15001 PNP MJ15002 The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications.	Original	MJ15001/D* MJ15001/D NPN 200 VOLTS POWER TRANSISTOR MJ15002 200 watts audio amp power transistors transistor tl 187 MJ15001 motorola MJ15001	PDF
mj15011 Abstract: No abstract text available Text: ON Semiconductort NPN Complementary Silicon Power Transistors MJ15011 * PNP MJ15012 * The MJ15011 and MJ15012 are PowerBase power transistors designed for high−power audio, disk head positioners, and other linear applications. These devices can also be used in power switching	Original	MJ15011 MJ15012 MJ15011 MJ15012	PDF
MJE243 MOTOROLA Abstract: MJE243 MJE-253 Bipolar Transistor MJE243-D transistor MJE253 equivalent 1N5825 MJE253 MSD6100 Text: MOTOROLA Order this document by MJE243/D SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE243* PNP MJE253* . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage —	Original	MJE243/D MJE243* MJE253* MJE243, MJE253 MJE243/D* MJE243 MOTOROLA MJE243 MJE-253 Bipolar Transistor MJE243-D transistor MJE253 equivalent 1N5825 MJE253 MSD6100	PDF
1N5825 Abstract: MJE200 MJE210 MSD6100 mje210 motorola Text: MOTOROLA Order this document by MJE200/D SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —	Original	MJE200/D MJE200* MJE210* MJE200/D* 1N5825 MJE200 MJE210 MSD6100 mje210 motorola	PDF
BD81010 Abstract: No abstract text available Text: ON Semiconductor NPN BD809 Plastic High Power Silicon Transistor PNP BD810 . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ	Original	BD809 BD810 BD81010	PDF
MJE15029 Abstract: MJE15031 mje15030 mje15031 MJE15028 MJE15030 transistor mje15030 MJE1503 Text: MOTOROLA Order this document by MJE15028/D SEMICONDUCTOR TECHNICAL DATA NPN MJE15028* MJE15030* PNP MJE15029* MJE15031* Complementary Silicon Plastic Power Transistors . . . designed for use as high–frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes	Original	MJE15028/D* MJE15028/D MJE15029 MJE15031 mje15030 mje15031 MJE15028 MJE15030 transistor mje15030 MJE1503	PDF
bd788 Abstract: 1N5825 BD787 MSD6100 Text: MOTOROLA Order this document by BD787/D SEMICONDUCTOR TECHNICAL DATA NPN BD787 PNP BD788 Complementary Plastic Silicon Power Transistors . . . designed for lower power audio amplifier and low current, high–speed switching applications. • Low Collector–Emitter Sustaining Voltage —	Original	BD787/D* BD787/D bd788 1N5825 BD787 MSD6100	PDF

200 WATTS AUDIO AMP POWER TRANSISTORS PNP Search Results

200 WATTS AUDIO AMP POWER TRANSISTORS PNP Result Highlights (5)

200 WATTS AUDIO AMP POWER TRANSISTORS PNP Datasheets Context Search

power transistors cross reference

NPN MATCHED PAIRS

332MCP

200 Ampere power transistor

nte280

JE15030

transistor t4 3570

123AP

Transistor C 3199

TRANSISTOR MJE15031

mje243

MJE200

MJ15025

Untitled

BD787

2n6031

transistor m 1104

NPN 200 VOLTS POWER TRANSISTOR

mj15011

MJE243 MOTOROLA

1N5825

BD81010

MJE15029

bd788