Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2.4-2.7GHZ 2W POWER AMPLIFIER Search Results

    2.4-2.7GHZ 2W POWER AMPLIFIER Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    2.4-2.7GHZ 2W POWER AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR AMP

    Abstract: No abstract text available
    Text: Preliminary Product Description Sirenza Microdevices’ SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs


    Original     		PDF SZM-2066Z 11b/g EDS-104641 SZM-2066Z" SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR AMP

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description Sirenza Microdevices’ SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs


    Original     		PDF SZM-2066Z 11b/g EDS-104641 SZM-2066Z"

    SZP-2026Z

    Abstract: No abstract text available
    Text: Preliminary Product Description Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with


    Original     		PDF SZP-2026Z EDS-104611 SZP-2026Z" SZP-2026Z*

    transistor 2.4GHz amplifier schematic

    Abstract: 2.4GHz amplifier schematic SZP-2026 SZP-2026Z 2.4GHz 2w Power Amplifier transistor SOF-26 szp2026z
    Text: Preliminary Product Description Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with


    Original     		PDF SZP-2026Z EDS-104611 SZP-2026Z" SZP-2026Z* transistor 2.4GHz amplifier schematic 2.4GHz amplifier schematic SZP-2026 2.4GHz 2w Power Amplifier transistor SOF-26 szp2026z

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description Sirenza Microdevices’ SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs


    Original     		PDF SZM-2066Z 11b/g EDS-104641 SZM-2066Z"

    SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR AMP

    Abstract: SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR SZM-2066Z vpc3 s 2.4 ghz transistor wifi amplifier wifi 2.4 ghz wifi 2.4 ghz pcb layout SZM-2066 vpc3 c wifi 2.4ghz DETECTOR CIRCUIT DIAGRAM
    Text: Preliminary Product Description Sirenza Microdevices’ SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs


    Original     		PDF SZM-2066Z 11b/g EDS-104641 SZM-2066Z" SZM-2066Z SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR AMP SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR vpc3 s 2.4 ghz transistor wifi amplifier wifi 2.4 ghz wifi 2.4 ghz pcb layout SZM-2066 vpc3 c wifi 2.4ghz DETECTOR CIRCUIT DIAGRAM

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with


    Original     		PDF SZP-2026Z EDS-104611 SZP-2026Z" SZP-2026Z*

    SzM2166

    Abstract: SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR AMP SZM - 238
    Text: Advanced Information Product Description Sirenza Microdevices’ SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs


    Original     		PDF SZM-2166Z 11b/g EDS-105683 SZM2166Z" SzM2166 SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR AMP SZM - 238

    2.4 ghz transistor wifi amplifier

    Abstract: No abstract text available
    Text: Preliminary Product Description Sirenza Microdevices’ SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs


    Original     		PDF SZM-2066Z 11b/g EDS-104641 SZM-2066Z" 2.4 ghz transistor wifi amplifier

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with


    Original     		PDF SZP-2026Z EDS-104611 SZP-2026Zâ SZP-2026Z*

    SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR

    Abstract: SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR AMP SZM-2166 wifi 2.4 ghz pcb layout transistor 2.4GHz amplifier schematic wifi 2.4 ghz transistor wifi amplifier szm2166 2.4GHz Power Amplifier module wifi 2.4 ghz SZM-2166Z
    Text: Preliminary Product Description Sirenza Microdevices’ SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs


    Original     		PDF SZM-2166Z SZM-2166Z SZM-2166Z-EVB2 SZM-2166Z-EVB1 SZM2166Z" SZM-2166Z-EVB3 EDS-105683 SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR AMP SZM-2166 wifi 2.4 ghz pcb layout transistor 2.4GHz amplifier schematic wifi 2.4 ghz transistor wifi amplifier szm2166 2.4GHz Power Amplifier module wifi 2.4 ghz

    QAM-64

    Abstract: No abstract text available
    Text: AH314 2.3-2.9 GHz WiMAX 2W Driver Amplifier • EVM <2.5 %@ 24 dBm Pout • Internal Active Bias Vpd2 Vcc2 Applications • 802.16 WiMAX infrastructure • WiBro infrastructure RF OUT GND / NC RF OUT RF IN GND / NC RF OUT RF IN GND / NC GND / NC GND / NC • RoHS-compliant/Lead-free


    Original     		PDF AH314 AH314 JESD22-C101 J-STD-020 1-800-WJ1-4401 QAM-64

    AH314

    Abstract: AH314-PCB JESD22-A114 17095 QAM 1024, OFDM
    Text: AH314 2.3-2.9 GHz WiMAX 2W Driver Amplifier • EVM <2.5 %@ 24 dBm Pout • Internal Active Bias Vpd2 Vcc2 Applications • 802.16 WiMAX infrastructure • WiBro infrastructure RF OUT GND / NC RF OUT RF IN GND / NC RF OUT RF IN GND / NC GND / NC GND / NC • RoHS-compliant/Lead-free


    Original     		PDF AH314 AH314 JESD22-A114 J-STD-020 1-800-WJ1-4401 AH314-PCB JESD22-A114 17095 QAM 1024, OFDM

    QAM64

    Abstract: 6039 marking
    Text: AH314 2.3-2.9 GHz WiMAX 2W Driver Amplifier • EVM <2.5 %@ 24 dBm Pout • Internal Active Bias Vpd2 Vcc2 Applications • 802.16 WiMAX infrastructure • WiBro infrastructure RF OUT GND / NC RF OUT RF IN GND / NC RF OUT RF IN GND / NC GND / NC GND / NC • Lead-free/RoHS-compliant


    Original     		PDF AH314 AH314 acti000V JESD22-C101 J-STD-020 1-800-WJ1-4401 QAM64 6039 marking

    AH314

    Abstract: AH314-PCB JESD22-A114 QAM driver s parameters 4ghz 2W High Linearity Amplifier 2W High Amplifier qfn
    Text: AH314 2.3-2.9 GHz WiMAX 2W Driver Amplifier • EVM <2.5 %@ 24 dBm Pout • Internal Active Bias Vpd2 Vcc2 Applications • 802.16 WiMAX infrastructure • WiBro infrastructure RF OUT GND / NC RF OUT RF IN GND / NC RF OUT RF IN GND / NC GND / NC GND / NC • Lead-free/RoHS-compliant


    Original     		PDF AH314 AH314 JESD22-A114 1-800-WJ1-4401 AH314-PCB JESD22-A114 QAM driver s parameters 4ghz 2W High Linearity Amplifier 2W High Amplifier qfn

    Untitled

    Abstract: No abstract text available
    Text: SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP Amplifier SZP-2026Z Preliminary 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor


    Original     		PDF SZP-2026Z SOF-26 SZP-2026Z SZP-2026Z-EVB1 SZP-2026Z-EVB2 EDS-104611

    600S100JW250

    Abstract: cap 10pF 50V 10 0603 X7R 600S2R0JW250 MCH18
    Text: RFPA2226 RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features     P1dB =33.5dBm at 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance POUT =26dBm at 2.5% EVM, VCC 5V POUT =27dBm at 2.5% EVM, VCC 6V


    Original     		PDF RFPA2226 RFPA2226 54Mb/s 26dBm 27dBm MCH185A5R6DK MCH182CN104K 600S1R6JW250 600S100JW250 cap 10pF 50V 10 0603 X7R 600S2R0JW250 MCH18

    Untitled

    Abstract: No abstract text available
    Text: RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA2226 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features     P1dB =33.5dBm at 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance POUT =26dBm at 2.5% EVM, VCC 5V POUT =27dBm at 2.5% EVM,


    Original     		PDF RFPA2226 RFPA2226 54Mb/s 26dBm 27dBm MCH185A5R6DK MCH182CN104K 600S1R6JW250

    Untitled

    Abstract: No abstract text available
    Text: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor


    Original     		PDF SZM-2066Z SZM-2066Z 11b/g a336-678-5570 EDS-104641

    SZM-2066Z

    Abstract: transistor 2.4GHz amplifier schematic wifi SZM-2066 600s100 transistor 2.4GHz class ab amplifier schematic SZM2066Z
    Text: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip


    Original     		PDF SZM-2066Z SZM-2066Z 11b/g 60052R4CW250 600S100JW250 0805HQ 12XJBB LL1608FH4N7J LL1608FH10J transistor 2.4GHz amplifier schematic wifi SZM-2066 600s100 transistor 2.4GHz class ab amplifier schematic SZM2066Z

    Untitled

    Abstract: No abstract text available
    Text: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip


    Original     		PDF SZM-2066Z SZM-2066Z 11b/g LL1608FH4N7J DS110620 LL1608FH10J SZM2066ZSQ SZM2066ZSR

    dk39

    Abstract: circuit amplifier wireless 2.4ghz 802.11g
    Text: SZM-2166Z SZM-2166Z 2.3GHz to 2.7GHz 2W Power Amplifier 2.3GHz to 2.7GHz 2W POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier


    Original     		PDF SZM-2166Z SZM-2166Z SZM-2166Z-EVB1 SZM-2166Z-EVB2 SZM-2166Z-EVB3 EDS-105840 dk39 circuit amplifier wireless 2.4ghz 802.11g

    vpc3 c

    Abstract: TRANSISTOR MARKING CODE R2A SZM-2066Z
    Text: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip


    Original     		PDF SZM-2066Z SZM-2066Z 11b/g 0805HQ 12XJBB LL1608FH4N7J LL1608FH10J DS110620 vpc3 c TRANSISTOR MARKING CODE R2A

    Untitled

    Abstract: No abstract text available
    Text: SZM-2166Z SZM-2166Z 2.3GHz to 2.7GHz 2W Power Amplifier 2.3GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT


    Original     		PDF SZM-2166Z SZM-2166Z DS110620 SZM2166ZSQ SZM2166ZSR SZM2166ZPCK-EVB1 SZM2166ZPCK-EVB2 SZM2166ZPCK-EVB3