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    2.4 GHZ 30W AMPLIFIER CIRCUIT Search Results

    2.4 GHZ 30W AMPLIFIER CIRCUIT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    2.4 GHZ 30W AMPLIFIER CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGFS45A2527B

    Abstract: 16621
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFS45A2527B MGFS45A2527B 079MIN. 16621

    16621

    Abstract: 351 fet
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFS45A2527B MGFS45A2527B 079MIN. -45dBc 16621 351 fet

    Band Power GaAs FET

    Abstract: 16621 high power FET transistor s-parameters MGFS45A2527B
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFS45A2527B MGFS45A2527B Band Power GaAs FET 16621 high power FET transistor s-parameters

    MGFS45V2325

    Abstract: 2.4 GHZ 30W AMPLIFIER CIRCUIT
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325 2.3~2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters inches OUTLINE DRAWING The MGFS45V2325 is an internally impedance matched GaAs power FET especially designed for use in 2.3~2.5


    Original     		PDF MGFS45V2325 MGFS45V2325 -45dBc 2.4 GHZ 30W AMPLIFIER CIRCUIT

    MGFS45V2735

    Abstract: 051 166
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET O U TLIN E FEATURES 2M IN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFS45V2735 MGFS45V2735 -45dBc 051 166

    MGFS45V2735

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFS45V2735 MGFS45V2735 -45dBc 25deg

    Untitled

    Abstract: No abstract text available
    Text: < L/S band internally matched power GaAs FET > MGFS45V2735 2.7 – 3.5 GHz BAND / 30W DESCRIPTION unit : m m OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFS45V2735 MGFS45V2735 -45dBc

    MGFS45V2735

    Abstract: No abstract text available
    Text: < L/S band internally matched power GaAs FET > MGFS45V2735 2.7 – 3.5 GHz BAND / 30W DESCRIPTION unit : m m OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFS45V2735 MGFS45V2735 -45dBc

    Anaren Microwave

    Abstract: microwave office Curtice UGF21030 high power fet amplifier schematic fet curtice 063700 teflon s-parameter
    Text: Design of a High Power Doherty Amplifier Using a New Large Signal LDMOS FET Model Simon M. Wood Cree Microwave Inc. simon_wood@cree.com Abstract There have been a number of papers written recently on the use of the Doherty amplifier technique at microwave frequencies. These have been


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    TGA2517

    Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
    Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: AM132740MM-BM-R AM132740MM-FM-R GaAs MMIC Power Amplifier Aug 2010 Rev 2 DESCRIPTION AMCOM’s AM132740MM-BM/FM-R is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs HIFET MESFET MMIC power amplifier biased at 14V. The input and inter-stage matching networks cover 1.3 to


    Original     		PDF AM132740MM-BM-R AM132740MM-FM-R AM132740MM-BM/FM-R 38dBm AN700 AM132740MM-BM/FM-R

    mmics

    Abstract: No abstract text available
    Text: AM204437WM-BM-R AM204437WM-FM-R Aug 2010 Rev 4 GaAs MMIC Power Amplifier DESCRIPTION AMCOM’s AM204437WM-BM/FM-R is part of the GaAs MMIC power amplifier series. It has 30dB gain and 37dBm output power over the 2.2 to 4.2GHz band. This MMIC is in a ceramic package with both RF and DC leads at the


    Original     		PDF AM204437WM-BM-R AM204437WM-FM-R AM204437WM-BM/FM-R 37dBm AN700 AM204437WM-FM-R 100mA, 300mA 1400mA mmics

    Untitled

    Abstract: No abstract text available
    Text: AM142540MM-BM-R AM142540MM-FM-R Aug 2010 Rev 8 GaAs MMIC Power Amplifier DESCRIPTION AMCOM’s AM142540MM-BM/FM-R is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs MESFET MMIC power amplifier biased at 14V. The input and inter-stage matching networks cover 1.4 to 2.5GHz.


    Original     		PDF AM142540MM-BM-R AM142540MM-FM-R AM142540MM-BM/FM-R 400MHz 40dBm) AM142540MM-BM/FM-R

    TMPA8891

    Abstract: TB1334FG TMPA8893 TB32160AFG TB1334 TMPA8897PSCNG TB1318FG TB32302fg TA8275HQ TMPA8879
    Text: ASSPs Audio & Video Equipment ICs z 66 Communications Equipment ICs z 78 Radio-Frequency Power Amp ICs z 81 Automotive ICs z 82 Display Driver ICs z 83 Network & Interface ICs z 86 Peripheral Equipment LSIs z 87 Other Consumer Product ICs z 88 65 Audio & Video Equipment ICs


    Original     		PDF TMPA8873CxCNG TMPA8879CxCNG TMPA8891CxCNG TMPA8893CxCNG TMPA8897CxCNG TMPA8899CxCNG TMPA8863CxNG TMPA8869CxNG TMPA8873PSCNG TMPA8879PSCNG TMPA8891 TB1334FG TMPA8893 TB32160AFG TB1334 TMPA8897PSCNG TB1318FG TB32302fg TA8275HQ TMPA8879

    500w sound amplifier circuit diagram

    Abstract: 11708A
    Text: Operating and Service Manual Agilent 8480 Series Coaxial Power Sensors This manual applies to the following models: 8481A 8482A 8483A 8485A 8487A 8481B 8482B 8481H 8482H 8487D 8485D 8481D Manufacturing Part Number: 08481-90173 May 23, 2014 Copyright 2003–2014 Agilent Technologies.


    Original     		PDF 8481B 8482B 8481H 8482H 8487D 8485D 8481D 1700Pf 500w sound amplifier circuit diagram 11708A

    PH1819-60

    Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
    Text: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: A enuators Bias-Ts Calibra on Kit for VNA DC Blocks Limiters Low Noise Amplifiers Modulators Notch Filters Power Amplifiers Terminators May 2014 LiConn designs, develops, and manufactures high performance, high quality, and cost compe ve RF/Microwave products. The products cover frequency bands


    Original     		PDF 27GHz

    MGFS45H2201G

    Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
    Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety


    Original     		PDF H-CR587-J KI-0612 MGFS45H2201G MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf

    Untitled

    Abstract: No abstract text available
    Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.


    Original     		PDF T13E-15 ISO9001

    E4407S-E57

    Abstract: mso6054a
    Text: 2011 GSA Schedule Contract Products Government & Military Test Equipment Savings Field Testing Just Got Easier 20 GHz Handheld Spectrum Analyzer N9344C HSA The features you need in a field-ready instrument • Rugged and fanless design for tough field environments


    Original     		PDF N9344C E4407S-E57 mso6054a

    TZ03r200

    Abstract: ceramic trimmer capacitor KMBT020
    Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.


    Original     		PDF T13E-14 QS9000 ISO9001 TZ03r200 ceramic trimmer capacitor KMBT020

    tlo82

    Abstract: TLO82 datasheet lm147 lm117 3.3V JM38510/10901BGA TLO82 application lm723 LM338 model SPICE LM723 pin details lm842
    Text: Worldwide Sales Offices Linear/Mixed-Signal Designer’s Guide Winter 2002 FRANCE ITALY PRC SWEDEN National Semicondutores da América do Sul Ltda. World Trade Center Av. das Nações Unidas, 12.551 22nd Floor - cj. 2207 04578-903 Brooklyn São Paulo, SP Brasil


    Original     		PDF I-20089 tlo82 TLO82 datasheet lm147 lm117 3.3V JM38510/10901BGA TLO82 application lm723 LM338 model SPICE LM723 pin details lm842

    smr-3822

    Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
    Text: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM


    Original     		PDF Jun08 smr-3822 x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter

    xg1015-SE

    Abstract: XB1013-qt CMM6001-BD CFP0103-SP CMM6004-BD XZ1003-QT XU1016 QH XP1073-BD XD1008-QH XP1035-BD
    Text: Sales Contact Information NORTH AMERICA COLORADO, UTAH USA ALABAMA, FLORIDA, GEORGIA, MISSISSIPPI, NORTH CAROLINA, SOUTH CAROLINA,TENNESSEE, Electronic Marketing Associates EMA 919-847-8800 rdenny@emarep.com Alabama Office 256-880-8050 djones@emarep.com


    Original     		PDF