MGFS45A2527B
Abstract: 16621
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFS45A2527B
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16621
Abstract: 351 fet
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFS45A2527B
MGFS45A2527B
079MIN.
-45dBc
16621
351 fet
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Band Power GaAs FET
Abstract: 16621 high power FET transistor s-parameters MGFS45A2527B
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFS45A2527B
MGFS45A2527B
Band Power GaAs FET
16621
high power FET transistor s-parameters
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MGFS45V2325
Abstract: 2.4 GHZ 30W AMPLIFIER CIRCUIT
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325 2.3~2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters inches OUTLINE DRAWING The MGFS45V2325 is an internally impedance matched GaAs power FET especially designed for use in 2.3~2.5
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MGFS45V2325
MGFS45V2325
-45dBc
2.4 GHZ 30W AMPLIFIER CIRCUIT
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MGFS45V2735
Abstract: 051 166
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET O U TLIN E FEATURES 2M IN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45V2735
MGFS45V2735
-45dBc
051 166
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MGFS45V2735
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45V2735
MGFS45V2735
-45dBc
25deg
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Untitled
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS45V2735 2.7 – 3.5 GHz BAND / 30W DESCRIPTION unit : m m OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45V2735
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MGFS45V2735
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS45V2735 2.7 – 3.5 GHz BAND / 30W DESCRIPTION unit : m m OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45V2735
MGFS45V2735
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Anaren Microwave
Abstract: microwave office Curtice UGF21030 high power fet amplifier schematic fet curtice 063700 teflon s-parameter
Text: Design of a High Power Doherty Amplifier Using a New Large Signal LDMOS FET Model Simon M. Wood Cree Microwave Inc. simon_wood@cree.com Abstract There have been a number of papers written recently on the use of the Doherty amplifier technique at microwave frequencies. These have been
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TGA2517
Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
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Untitled
Abstract: No abstract text available
Text: AM132740MM-BM-R AM132740MM-FM-R GaAs MMIC Power Amplifier Aug 2010 Rev 2 DESCRIPTION AMCOM’s AM132740MM-BM/FM-R is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs HIFET MESFET MMIC power amplifier biased at 14V. The input and inter-stage matching networks cover 1.3 to
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AM132740MM-BM-R
AM132740MM-FM-R
AM132740MM-BM/FM-R
38dBm
AN700
AM132740MM-BM/FM-R
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mmics
Abstract: No abstract text available
Text: AM204437WM-BM-R AM204437WM-FM-R Aug 2010 Rev 4 GaAs MMIC Power Amplifier DESCRIPTION AMCOM’s AM204437WM-BM/FM-R is part of the GaAs MMIC power amplifier series. It has 30dB gain and 37dBm output power over the 2.2 to 4.2GHz band. This MMIC is in a ceramic package with both RF and DC leads at the
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AM204437WM-BM-R
AM204437WM-FM-R
AM204437WM-BM/FM-R
37dBm
AN700
AM204437WM-FM-R
100mA,
300mA
1400mA
mmics
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Untitled
Abstract: No abstract text available
Text: AM142540MM-BM-R AM142540MM-FM-R Aug 2010 Rev 8 GaAs MMIC Power Amplifier DESCRIPTION AMCOM’s AM142540MM-BM/FM-R is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs MESFET MMIC power amplifier biased at 14V. The input and inter-stage matching networks cover 1.4 to 2.5GHz.
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AM142540MM-BM-R
AM142540MM-FM-R
AM142540MM-BM/FM-R
400MHz
40dBm)
AM142540MM-BM/FM-R
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TMPA8891
Abstract: TB1334FG TMPA8893 TB32160AFG TB1334 TMPA8897PSCNG TB1318FG TB32302fg TA8275HQ TMPA8879
Text: ASSPs Audio & Video Equipment ICs z 66 Communications Equipment ICs z 78 Radio-Frequency Power Amp ICs z 81 Automotive ICs z 82 Display Driver ICs z 83 Network & Interface ICs z 86 Peripheral Equipment LSIs z 87 Other Consumer Product ICs z 88 65 Audio & Video Equipment ICs
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TMPA8873CxCNG
TMPA8879CxCNG
TMPA8891CxCNG
TMPA8893CxCNG
TMPA8897CxCNG
TMPA8899CxCNG
TMPA8863CxNG
TMPA8869CxNG
TMPA8873PSCNG
TMPA8879PSCNG
TMPA8891
TB1334FG
TMPA8893
TB32160AFG
TB1334
TMPA8897PSCNG
TB1318FG
TB32302fg
TA8275HQ
TMPA8879
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500w sound amplifier circuit diagram
Abstract: 11708A
Text: Operating and Service Manual Agilent 8480 Series Coaxial Power Sensors This manual applies to the following models: 8481A 8482A 8483A 8485A 8487A 8481B 8482B 8481H 8482H 8487D 8485D 8481D Manufacturing Part Number: 08481-90173 May 23, 2014 Copyright 2003–2014 Agilent Technologies.
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8481B
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8482H
8487D
8485D
8481D
1700Pf
500w sound amplifier circuit diagram
11708A
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PH1819-60
Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
Text: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies
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Untitled
Abstract: No abstract text available
Text: A enuators Bias-Ts Calibra on Kit for VNA DC Blocks Limiters Low Noise Amplifiers Modulators Notch Filters Power Amplifiers Terminators May 2014 LiConn designs, develops, and manufactures high performance, high quality, and cost compe ve RF/Microwave products. The products cover frequency bands
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27GHz
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MGFS45H2201G
Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety
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H-CR587-J
KI-0612
MGFS45H2201G
MGFS40H2201G
MGF0909A
sirio
mgfc36v-a
QVC12
MGF1907A
MGF4961
mgf4941al
mitsubishi mgf
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Untitled
Abstract: No abstract text available
Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.
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ISO9001
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E4407S-E57
Abstract: mso6054a
Text: 2011 GSA Schedule Contract Products Government & Military Test Equipment Savings Field Testing Just Got Easier 20 GHz Handheld Spectrum Analyzer N9344C HSA The features you need in a field-ready instrument • Rugged and fanless design for tough field environments
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mso6054a
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TZ03r200
Abstract: ceramic trimmer capacitor KMBT020
Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.
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T13E-14
QS9000
ISO9001
TZ03r200
ceramic trimmer capacitor
KMBT020
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tlo82
Abstract: TLO82 datasheet lm147 lm117 3.3V JM38510/10901BGA TLO82 application lm723 LM338 model SPICE LM723 pin details lm842
Text: Worldwide Sales Offices Linear/Mixed-Signal Designer’s Guide Winter 2002 FRANCE ITALY PRC SWEDEN National Semicondutores da América do Sul Ltda. World Trade Center Av. das Nações Unidas, 12.551 22nd Floor - cj. 2207 04578-903 Brooklyn São Paulo, SP Brasil
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tlo82
TLO82 datasheet
lm147
lm117 3.3V
JM38510/10901BGA
TLO82 application
lm723
LM338 model SPICE
LM723 pin details
lm842
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smr-3822
Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
Text: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM
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Jun08
smr-3822
x-band power transistor 50W
SMR-5550
x-band mmic lna
HF multicoupler
GAAS FET AMPLIFIER x-band 10w
x-band microwave fet
SM4T mixer
PALLET FM AMPLIFIER 300 WATTS
x-band limiter
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xg1015-SE
Abstract: XB1013-qt CMM6001-BD CFP0103-SP CMM6004-BD XZ1003-QT XU1016 QH XP1073-BD XD1008-QH XP1035-BD
Text: Sales Contact Information NORTH AMERICA COLORADO, UTAH USA ALABAMA, FLORIDA, GEORGIA, MISSISSIPPI, NORTH CAROLINA, SOUTH CAROLINA,TENNESSEE, Electronic Marketing Associates EMA 919-847-8800 rdenny@emarep.com Alabama Office 256-880-8050 djones@emarep.com
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