MGFS45V2325A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325A 2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 - 2.5 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFS45V2325A
MGFS45V2325A
079MIN.
-45dBc
25deg
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MGFS45V2325A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325A 2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 - 2.5 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFS45V2325A
MGFS45V2325A
25deg
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Untitled
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS45V2325A 2.3 – 2.5 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 – 2.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45V2325A
MGFS45V2325A
079MIN.
-45dBc
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MGFS45V2325A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325A 2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 - 2.5 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFS45V2325A
MGFS45V2325A
079MIN.
25deg
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MGFS45V2325
Abstract: 2.4 GHZ 30W AMPLIFIER CIRCUIT
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325 2.3~2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters inches OUTLINE DRAWING The MGFS45V2325 is an internally impedance matched GaAs power FET especially designed for use in 2.3~2.5
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MGFS45V2325
MGFS45V2325
-45dBc
2.4 GHZ 30W AMPLIFIER CIRCUIT
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Untitled
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS45V2325A 2.3 – 2.5 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 – 2.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45V2325A
MGFS45V2325A
079MIN.
25ohm
GF-51
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C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
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M6STA-005VA/WA/SA
MF-156STA-006VA/WA/SA
MF-156SRA-002VA/WA/SA
MF-622STA-004VA/WA/SA
MF-622STA-005VA/WA/SA
MF-622STA-006VA/WA/SA
MF-622SRA-002VA/WA/SA
MF-2500STA-002VA/WA,
003VA/WA,
004VA/WA
C42V5964
MGF1302 TRANSISTOR
MGF1601
MGFC1402
M57721
M67760LC
H2 MARKING SOT-89 mmIC
2SC5125
MITSUBISHI M57710-A
M68776
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MGF4937
Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed
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H-CX587-R
KI-1311
MGF4937
MGFG5H1503
MGF4937AM
GD-32
MGFG5H1502
MGF0904
mgfc39v5964
MGF2430
MGF0909A
BA012J1
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325 2.3~2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION OUTLINE DRAWING T h e M G F S 4 5 V 2 3 2 5 is an in te rn a lly im p e d a n ce m atch e d G a A s p o w e r FE T e s p e c ia lly d e s ig n e d fo r use in 2 .3 -2 .5
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MGFS45V2325
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325 2.3~2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters inches OUTLINE DRAWING The MGFS45V2325 is an internally impedance m atched GaAs power FET especially designed for use in 2.3~2.5
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MGFS45V2325
MGFS45V2325
-45dBc
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MGFS45V2325A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325A 2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAsFET DESCRIPTION The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 - 2.5 GHz band amplifiers.The hermetically sealed metal-ceramic
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OCR Scan
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MGFS45V2325A
MGFS45V2325A
-45dBc
25deg
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