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    MGFS45V2325 Search Results

    MGFS45V2325 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFS45V2325 Mitsubishi 2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET Original PDF
    MGFS45V2325A Mitsubishi 2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET Original PDF
    MGFS45V2325A Mitsubishi 2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET Scan PDF

    MGFS45V2325 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGFS45V2325A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325A 2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 - 2.5 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original
    PDF MGFS45V2325A MGFS45V2325A 079MIN. -45dBc 25deg

    MGFS45V2325A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325A 2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 - 2.5 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original
    PDF MGFS45V2325A MGFS45V2325A 25deg

    Untitled

    Abstract: No abstract text available
    Text: < L/S band internally matched power GaAs FET > MGFS45V2325A 2.3 – 2.5 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 – 2.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    PDF MGFS45V2325A MGFS45V2325A 079MIN. -45dBc

    MGFS45V2325A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325A 2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 - 2.5 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original
    PDF MGFS45V2325A MGFS45V2325A 079MIN. 25deg

    MGFS45V2325

    Abstract: 2.4 GHZ 30W AMPLIFIER CIRCUIT
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325 2.3~2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters inches OUTLINE DRAWING The MGFS45V2325 is an internally impedance matched GaAs power FET especially designed for use in 2.3~2.5


    Original
    PDF MGFS45V2325 MGFS45V2325 -45dBc 2.4 GHZ 30W AMPLIFIER CIRCUIT

    Untitled

    Abstract: No abstract text available
    Text: < L/S band internally matched power GaAs FET > MGFS45V2325A 2.3 – 2.5 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 – 2.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    PDF MGFS45V2325A MGFS45V2325A 079MIN. 25ohm GF-51

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original
    PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original
    PDF H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325 2.3~2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION OUTLINE DRAWING T h e M G F S 4 5 V 2 3 2 5 is an in te rn a lly im p e d a n ce m atch e d G a A s p o w e r FE T e s p e c ia lly d e s ig n e d fo r use in 2 .3 -2 .5


    OCR Scan
    PDF MGFS45V2325

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325 2.3~2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters inches OUTLINE DRAWING The MGFS45V2325 is an internally impedance m atched GaAs power FET especially designed for use in 2.3~2.5


    OCR Scan
    PDF MGFS45V2325 MGFS45V2325 -45dBc

    MGFS45V2325A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325A 2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAsFET DESCRIPTION The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 - 2.5 GHz band amplifiers.The hermetically sealed metal-ceramic


    OCR Scan
    PDF MGFS45V2325A MGFS45V2325A -45dBc 25deg