ir led 940 nm 1 w
Abstract: 660 880 940 led IR LED 940 nm spo2 spo2 specifications spo2 features 895nm emitter 660 880 940 dual-emitter DUAL-EMITTER MATCHING-PHOTODET
Text: DUAL EMITTER / MATCHING PHOTODETECTOR SERIES MOLDED LEAD FRAME AND LEADLESS CERAMIC SUBSTRATE APPLICATIONS FEATURES • SPO2 • Blood Analysis • Medical Instrumentaion • Ratiometric Instruments The Dual LED series consist of a 660 nm red LED and a companion IR
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BPD-BQA934
Abstract: l129 BPD-BQB334 L-132 BPD-BQA334 BPD-BQAA34 BPD-BQB934 BPD-BQBA34 BPD-BQD934 BPD-BQDA34
Text: PHOTODIODE-END & SIDE LOOK Chip Package Part No. Material Electrical & Optical Characteristics Wavelength Op nm Light Current Lens IL(uA) Color @VR=5V Ee=1mW/cm2 Typ 3I BPD-BQA341 Si-Photodiode BPD-BQB341 (PIN) BPD-BQA334 BPD-BQB334 5I Si-Photodiode (PIN)
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BPD-BQA341
BPD-BQB341
BPD-BQA334
BPD-BQB334
BPD-BQD334
L-132
BPD-RQ03DV-1
L-133
BPD-BQA934
l129
BPD-BQB334
L-132
BPD-BQA334
BPD-BQAA34
BPD-BQB934
BPD-BQBA34
BPD-BQD934
BPD-BQDA34
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L14F1 phototransistor datasheet
Abstract: L14F1 PHOTOTRANSISTOR phototransistor 3 pin L14F1 Phototransistor L14F1 l14f1 ir phototransistor T1 L14F1 Phototransistor L14G3 L14F1 PHOTOTRANSISTOR PIN opto transistor moc 12v LED 55 with L14F1 phototransistor
Text: Optoelectronics Light Emitting Diodes Light Emitting Diodes LED , Plastic Package Ie (mW/sr) CIF = 100 mA Max IR (µA) @ VR = 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength (nm) λp Min Max Max VF (V) @ IF = 100 mA QEC112 6 30 1.7 10 24 940
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QEC112
QEC113
QEC121
QEC122
QEC123
QED233
QED234
QED633
QED634
QED121
L14F1 phototransistor datasheet
L14F1 PHOTOTRANSISTOR
phototransistor 3 pin L14F1
Phototransistor L14F1
l14f1 ir phototransistor
T1 L14F1
Phototransistor L14G3
L14F1 PHOTOTRANSISTOR PIN
opto transistor moc 12v
LED 55 with L14F1 phototransistor
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VSML3710
Abstract: VSML3710-GS08
Text: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • • • • Package type: surface mount Package form: PLCC-2 Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75
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VSML3710
VEMT3700
J-STD-020
AEC-Q101
2002/95/EC
2002/96/EC
18-Jul-08
VSML3710
VSML3710-GS08
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VSML3710
Abstract: VSML3710-GS08 MA50NM
Text: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability
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VSML3710
VEMT3700
J-STD-020
VSML3710
18-Jul-08
VSML3710-GS08
MA50NM
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J-STD-020D
Abstract: VSML3710 VSML3710-GS08
Text: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability
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VSML3710
VEMT3700
J-STD-020
VSML3710
18-Jul-08
J-STD-020D
VSML3710-GS08
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VSML3710
Abstract: VSML3710-GS08
Text: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability
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VSML3710
VEMT3700
J-STD-020
VSML3710
11-Mar-11
VSML3710-GS08
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Untitled
Abstract: No abstract text available
Text: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability
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VSML3710
VEMT3700
VSML3710
J-STD-020
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability
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VSML3710
VEMT3700
J-STD-020
VSML3710
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability
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VSML3710
VEMT3700
VSML3710
J-STD-020
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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bpw 75
Abstract: near IR photodiodes with daylight filter BPW 23 nf ir headphone BPW34 application note
Text: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability
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VSML3710
VEMT3700
VSML3710
J-STD-020
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
bpw 75
near IR photodiodes with daylight filter
BPW 23 nf
ir headphone
BPW34 application note
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smd diode GW
Abstract: TSML1020 DATA SHEET high power infrared led TEMT1000 TSML1000 TSML1020 TSML1030 TSML1040 GaAs 1000 nm Infrared Diode,
Text: TSML1000, TSML1020, TSML1030, TSML1040 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES TSML1000 TSML1020 • Package type: surface mount • Package form: GW, RGW, yoke, axial • Dimensions L x W x H in mm : 2.5 x 2 x 2.7
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TSML1000,
TSML1020,
TSML1030,
TSML1040
TSML1000
TSML1020
TSML1030
TEMT1000
J-STD-020
smd diode GW
TSML1020 DATA SHEET
high power infrared led
TEMT1000
TSML1000
TSML1020
TSML1030
TSML1040
GaAs 1000 nm Infrared Diode,
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smd diode GW
Abstract: No abstract text available
Text: TSML1000, TSML1020, TSML1030, TSML1040 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES TSML1000 TSML1020 • Package type: surface mount • Package form: GW, RGW, yoke, axial • Dimensions L x W x H in mm : 2.5 x 2 x 2.7
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TSML1000,
TSML1020,
TSML1030,
TSML1040
TSML1000
TSML1020
TSML1030
TEMT1000
J-STD-020
smd diode GW
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IR LED 940 nm
Abstract: No abstract text available
Text: PIN PHOTODIODE DESCRIPTION FEATURES The PH320 is a PIN structure photodiode which is molded with visible-ray shielding resin, thus activating the light-receiving sensitivity at approx. 840 nm and leading to little possibility of malfunction by fluorescent lamps. As the high-speed re
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PH320
PH320
PH302C,
PH309
PH310,
b427ses
00bS317
IR LED 940 nm
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Untitled
Abstract: No abstract text available
Text: O K I electronic components OLP124 GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD124 is a high-output GaAs infrared light emission mindiode sealed with a transparent resin in a TO-18 metal case. Its light emission wave is peaks at 940 nm. Because of its sharp directivity,
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OLP124
OLD124
OLD12410Â
b7E4240
OLD124
ti72424D
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Light Emitting Diodes
Abstract: Infrared Emitting Diode OLD124
Text: O K I electronic components OLP124 GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD124 is a high-output GaAs infrared light emission mindiode sealed with a transparent resin in a TO-18 metal case. Its light emission wave is peaks at 940 nm. Because of its sharp directivity,
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OLD124_
OLD124
b724240
OLD124
b7EM24G
b75M240
Light Emitting Diodes
Infrared Emitting Diode
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317 T
Abstract: PH31-0 PH310
Text: PLASTIC MOLDED PIN PHOTODIODE PH310 FEATURES DESCRIPTION • ULTRA HIGH SPEED RESPONSE tr, tf '=¡30 ns • COINCIDENCE OF THE WAVELENGTH OF MAXIMUM SENSITIVITY WITH THAT OF AN INFRARED LED: * smax = 990 nm The PH310 is a photodiode with PIN structure. It has a wide
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PH310
PH310
L427525
00b5314
b427525
317 T
PH31-0
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fototransistor
Abstract: AFD3000 AFE2000 FPE100 fototransistor ir T0180 AFD1200 AFE5100
Text: ABORN ELECTRONICS S3E J> Special Devices OGTTblM DDDODSb bT^ H A B E -p¿S -07 FIBER OPTIC EMITTERS DESCRIPTION DEVICE units çonditlons WAVELENGTH POWER OUT FORWARD VOLTAGE nM Ip=50mA Volts Ip*50mA uW Ip=5QmA T i n r PACKAGE FACE TIME DRAWING numerical APERATURE
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0Q0005ki
If-50mA
IF-50niA
AFE2000
T0-18Window
AFE2100
T0-18Uindow
AFE3100
T0-18Plastic
AFE5100
fototransistor
AFD3000
FPE100
fototransistor ir
T0180
AFD1200
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OLD122B
Abstract: No abstract text available
Text: O K I electronic components QLD122_ GaAs Infrared Light-Emitting Diode_ GENERAL DESCRIPTION The OLD122 is a high-output GaAs infrared light emission diode sealed with a glass lens in a TO-18 metal case. Its light emission wave peaks at 940 nm. Because of its sharp directiv
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QLD122_
OLD122
OLD122B
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Untitled
Abstract: No abstract text available
Text: OKI electronic components OLD123_ GaAs Infrared Light-Emitting Diode_ GENERAL DESCRIPTION The OLD123 is a high-output G aAs infrared light emission diode sealed with a flat glass in a TO-18 metal case. Its light emission wave peaks at 940 nm. Beause of its sharp directivity,
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OLD123_
OLD123
lF-100mA
IF-100mA
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Untitled
Abstract: No abstract text available
Text: OKI electronic components OLP124 _ GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD124 is a high-output GaAs infrared light emitting diode sealed with a transparent resin in a TO-18 metal case. Its light emission wavelength peaks at 940 nm. Because of its high reliability, the
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OLP124
OLD124
OLD124
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Untitled
Abstract: No abstract text available
Text: O K I electronic components OLD 127_ GaAs Infrared Light-Emitting Diode_ GENERAL DESCRIPTION The OLD 127 is a high-output GaAs infrared light emission mindiode sealed with a glass lens in a metal mini case. Its light emission wave is peaks at 940 nm. Because of its sharp direc
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lF-50mA
lF-50mA
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old123
Abstract: No abstract text available
Text: OKI electronic components GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD123 is a high-output GaAs infrared light emitting diode sealed with a flat glass in a TO-18 metal case. Its light emission wavelength peaks at 940 nm. Beause of its high reliability, the OLD! 23
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OLD123
OLD123
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OLD123
Abstract: Infrared Emitting Diode OLP123 1000 nm light emitting diode
Text: O K I electronic components OLP123_ GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD123 is a high-output GaAs infrared light emission diode sealed with a flat glass in a TO-18 metal case. Its light emission wave peaks at 940 nm. Beause of its sharp directivity, multiple units
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OLP123_
OLD123
940nm
OLD123
b7S4240
Ifm/100
242H0
Infrared Emitting Diode
OLP123
1000 nm light emitting diode
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