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    2-18 GHZ LOW NOISE GALLIUM ARSENIDE FET Search Results

    2-18 GHZ LOW NOISE GALLIUM ARSENIDE FET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3RM28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 300 mA, DFN4C Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    2-18 GHZ LOW NOISE GALLIUM ARSENIDE FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AVANTEK oscillator

    Abstract: Avantek rf amplifier Avantek amplifier 140 Avantek atf-1323
    Text: AVANTEK INC 2GE AVANTEK D • llMlìbb 0GGb544 T ATF-13100 2-18 GHz Low Noise Gallium Arsenide FET _ ^ T - 3 > - Z S Avantek Chip Outline Features • Low Noise Figure: 1.1 dB typical at 12 GHz • High Associated Gain: 9.5 dB typical at 12 GHz


    OCR Scan     		PDF 0GGb544 ATF-13100 rel-48 AVANTEK oscillator Avantek rf amplifier Avantek amplifier 140 Avantek atf-1323

    avantek

    Abstract: Avantek amplifier 140 2-18 GHz Low Noise Gallium Arsenide FET AVANTEK transistor ATF-13100 ATF-13100-GP3 ATF 351 Avantek amplifier 167 Avantek Amplifier AVANTEK oscillator
    Text: AVANTEK INC 2GE D • limihb 0GGb544 ATF-13100 2-18 GHz Low Noise Gallium Arsenide FET =1 ' -3.NZS Avantek Chip Outline Features • • • Low Noise Figure: 1.1 dB typical at 12 GHz High Associated Gain: 9.5 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi dB


    OCR Scan     		PDF 0GGb544 ATF-13100 ATF-13100 recommende63 avantek Avantek amplifier 140 2-18 GHz Low Noise Gallium Arsenide FET AVANTEK transistor ATF-13100-GP3 ATF 351 Avantek amplifier 167 Avantek Amplifier AVANTEK oscillator

    transistor atf

    Abstract: 2-18 GHz Low Noise Gallium Arsenide FET
    Text: ATF-13100 2-18 GHz Low Noise Gallium Arsenide FET WiaË H EW LET T mLOÆ PA C K A R D Chip Outline Features • • Low Noise Figure: 1.1 dB typical at 12 GHz High Associated Gain: 9.5 dB typical at 12 GHz • High Output Power: 17.5 dBm typical Pi dB at 12 GHz


    OCR Scan     		PDF ATF-13100 transistor atf 2-18 GHz Low Noise Gallium Arsenide FET

    Untitled

    Abstract: No abstract text available
    Text: HEWLETT-PACKARD/ CHPNTS Ea blE D HEW LETT PACKARD • 4 4 4 7 5 6 4 ODG'ìfl'ìS EET « H P A oTo r ^ j 0? m ■ 2-18 GHz Low Noise Gallium Arsenide FET Chip Outline Features • • Low Noise Figure: 1.1 dB typical at 12 GHz High Associated Gain: 9.5 dB typical at 12 GHz


    OCR Scan     		PDF ATF-13100 passivati68

    ATF-35176

    Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376
    Text: Gallium Arsenide GaAs Field Effect Transistors (FETs) Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number Gate Width Optimum Freq. Range (GHz) Test Freq. (GHz) NF. (dB) (dB) PldB (dBm) 0.5-12 2-18 0.5-6 0.5-10 4 12 4 4 0.5


    OCR Scan     		PDF ATF-10100 ATF-13100 ATF-21100 ATF-25100 ATF-10170 ATF-13170 ATF-21170 ATF-25170 ATF-10136 ATF-10236 ATF-35176 ATF-3507 ATF-35076 ATF-44100 ATF26550 ATF-13036 ATF-35576 ATF-35376

    ATF-26100

    Abstract: AT-10600 4sut ATF26100 ATF26100-GP3
    Text: HEWLETT-PACKARD/ m CPIPNTS b lE ]> • 4447SA4 PACKARD 73b ■HPA Chip Outline Features • • • 000^32 ATF-26100 AT-10600 2-18 GHz General Purpose Gallium Arsenide FET HEW LETT Low Noise Figure: 1.8 dB typical at 12 GHz High Associated Gain: 9.0 dB typical at 12 GHz


    OCR Scan     		PDF 4447SA4 ATF-26100 AT-10600) ATF-26100 AT-10600 4sut ATF26100 ATF26100-GP3

    ATF-26100

    Abstract: 2-18 GHz Low Noise Gallium Arsenide FET
    Text: ¥hn% ATF-26100 AT-10600 2-18 GHz General Purpose Gallium Arsenide FET H E W LE T T ft "HÆ PACKARD Features • • • Chip Outline Low Noise Figure: 1.8 dB typical at 12 GHz High Associated Gain: 9.0 dB typical at 12 GHz High Output Power: 18.0 dBm typical Pi dB


    OCR Scan     		PDF ATF-26100 AT-10600) ATF-26100 2-18 GHz Low Noise Gallium Arsenide FET

    atf 204

    Abstract: ATF-10100-GP1
    Text: HEWLETT-PACKARD/ Cfl PNTS blE D WIJ}« HEWLETT mLUm PACKARD • 4447504 * Î ST ■ H P A ATF-10100 0.5-12 GHz Low Noise Gallium Arsenide FET Features • • • • 000^678 Chip Outline Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: VDS = 2 V, IDS = 25 mA


    OCR Scan     		PDF ATF-10100 Total60 atf 204 ATF-10100-GP1

    25C1815

    Abstract: No abstract text available
    Text: WhoI ATF-10100 0.5-12 GHz Low Noise Gallium Arsenide FET H EW LETT WL'HM PACKARD Features • • • • Chip Outline Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: VDS = 2 V, IDS = 25 mA High Assosiated Gain: 14.0 dB typical at 4 GHz High Output Power: 21.0 dBm typical


    OCR Scan     		PDF ATF-10100 nit122 25C1815

    AVANTEK transistor

    Abstract: No abstract text available
    Text: AVANTEK INC EOE D im iU L . avan tek data sheet OQObâMc? b ATF-10100 0.5-12 GHz Low Noise Gallium Arsenide FET October, 1989 C T31-2S Avantek Chip Outline Features • • • • Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V , I ds = 25 mA


    OCR Scan     		PDF ATF-10100 T31-2S AVANTEK transistor

    AT82

    Abstract: AVANTEK transistor
    Text: AVA N T E K INC SOE D O avantek ATF-25100 AT-8251 0.5-10 GHz Lòw Noise Gallium Arsenide FET 'T-'M-zs Features Avantek Chip Outline • Low Noise Flgure:.0.8 dB typical at 4 GHz • High Associated Gain: 14.0 dB typical at 4 GHz • High Output Power: 21.0 dBm typical Pi dB


    OCR Scan     		PDF ATF-25100 AT-8251) ATF-25100 AT82 AVANTEK transistor

    ATF-25100

    Abstract: ATF25100-GP3 AT-8251 at8251
    Text: HEW LETT-PACKARD/ C MP NT S b lE H EW LETT PACKARD m D • l 4 l4 7 S f l 4 ODCmSB 723 ATF-25100 (AT-8251 0.5-10 GHz Low Noise Gallium Arsenide FET Features Chip Outline • • Low Noise Figure: 0.8 dB typical at 4 GHz High Associated Gain: 14.0 dB typical at 4 GHz


    OCR Scan     		PDF ATF-25100 AT-8251 ATF-25100 ATF25100-GP3 AT-8251 at8251

    ATF-10170

    Abstract: atf10170
    Text: ATF-10170 0.5-12 GHz Low Noise Gallium Arsenide FET W K 3\ H E W LE TT mL'EM PACKARD Features 70 mil Package • • • • Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: Vos = 2 V, lDS = 25 mA High Associated Gain: 14.0 dB typical at 4 GHz High Output Power: 21.0 dBm typical Pi dB


    OCR Scan     		PDF ATF-10170 atf10170

    ATF-10735

    Abstract: ATF-20135 ATF20135
    Text: AVANTEK INC Ot.E D J A A V A N T E IC •E l\ U M lU h DDGSTbfl 1 | ATF-20135 ATF-10735 2-12 GHz General Purpose Gallium Arsenide FET T-31-25 Avantek micro-X Package Features .085 • High Associated Gain 12.5 dB typical at 4 GHz • Low Bias Vd s =2V, lDs =20 mA


    OCR Scan     		PDF ATF-20135 ATF-10735) T-31-25 ATF-20135 ATF-10735 ATF20135

    ATF13136

    Abstract: ATF13136-TR1 ATF13136-STR atf13136str 2-18 GHz Low Noise Gallium Arsenide FET ATF-13136-TR1
    Text: 44M7SaM ODOTflTM DTE • H P A blE D HEWLETT- PAC KARD/ CHPNTS WhoI H E W L E T T mLftM PA C K A R D ATF-13136 2-16 GHz Low Noise Gallium Arsenide FET 36 mlcro-X Package1 Features Low Noise Figure: 1.2 dB typical at 12 GHz High Associated Gain: 9.5 dB typical at 12 GHz


    OCR Scan     		PDF 44M7SaM ATF-13136 ATF13136 ATF13136-TR1 ATF13136-STR atf13136str 2-18 GHz Low Noise Gallium Arsenide FET ATF-13136-TR1

    Untitled

    Abstract: No abstract text available
    Text: HEWLETT-PACKARD/ CHPNTS LIE ]> T O * H EW LETT wHEMPACKARD • H 4 4 7 5A 4 0D[Hflfl3 217 ■ H P A ATF-10170 0.5-12 GHz Low Noise Gallium Arsenide FET Features 70 mil Package • • • • Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V, Ids = 25 mA


    OCR Scan     		PDF ATF-10170 TF-10170

    S parameters for ATF 10136

    Abstract: AVANTEK transistor Avantek atf-1323
    Text: AVANTEK E GE INC D 0AVANTEK im n tb 0D0kiS35 a ATF-10136 0.5-12 GHz Low Noise Gallium Arsenide FET T'K-^S" Features • • • • • • Avantek 36 micro-X Package1 Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V , I ds = 20 mA High Associated Gain: 13.0 dB typical at 4 GHz


    OCR Scan     		PDF ATF-10136 0D0kiS35 31O-371-0717or31O-371-8478 S parameters for ATF 10136 AVANTEK transistor Avantek atf-1323

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK INC Ot.E D im n b t. OGGSibt. ATF-10235 2-12 GHz Low Noise Gallium Arsenide FET 0AVANTEK Ö | T-31-25 Avantek micro-X Package Features • Low Noise Figure 0.8 dB typical at 4 GHz • Low Bias V d s = 2V, lDs =20 mA • High Associated Gain 13.0 dB typical at 4 GHz


    OCR Scan     		PDF ATF-10235 T-31-25

    ATF-10135

    Abstract: Avantek 10135 ATF10135 avantek ATF101
    Text: GbE D I AVANTEK INC AVANTEK im n b fa 00G 5% 4 4 | T-31-25 ATF-10135 2-12 GHz Low Noise Gallium Arsenide FET Avantek micro-X Package Features • Low Noise Figure 0.5 dB typical at 4 GHz • Low Bias V d s = 2 V , I d s = 2 0 mA • High Associated Gain


    OCR Scan     		PDF T-31-25 ATF-10135 ATF-10135 Avantek 10135 ATF10135 avantek ATF101

    AVANTEK transistor

    Abstract: ATF-13136-TR1
    Text: A V A N T E K INC EOE D AVANTEK i m m 0GQb54b 2 ATF-13136 2-16 GHz Low Noise Gallium Arsenide FET "T -^ -Z S Features Avantek 36 mlcro-X Package1 • Low Noise Figure: 1.2 dB typical at 12 GHz • High Associated Gain: 9.5 dB typical at 12 GHz • High Output Power: 17.5 dBm typical Pi dB


    OCR Scan     		PDF 0GQb54b ATF-13136 AVANTEK transistor ATF-13136-TR1

    MICROWAVE ASSOCIATES

    Abstract: 2.5 GHz RF power transistors with s-parameters RF transistors with s-parameters TIP 298 MA4F600
    Text: n/A-COn ADVANCED Sfl DE J S b 4 E l f l 3 □□□□017 T jp D J- 3t~Z? MfoCCA MA4F001 Series Gallium Arsenide Field Effect Transistors Description The MA4F001 series of gallium arsenide fieldeffect transistors GaAs FETs is a series of low power Schottky barrier gate devices with a 1


    OCR Scan     		PDF MA4F001 4701B MA-4F001 MA-4F004 MA-4F600 MA-4F200 MA-4F300 MICROWAVE ASSOCIATES 2.5 GHz RF power transistors with s-parameters RF transistors with s-parameters TIP 298 MA4F600

    Untitled

    Abstract: No abstract text available
    Text: 20E D AVANTEK INC 0 AVANTEK • Hi data sheet 1 1 4 1 % ^ QDQhflMb 3 ATF-10170 0.5-12 GHz Low Noise Gallium Arsenide FET October, 1989 T-S i-ZS Avantek 70 mit Package Features • • • • • Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V , I ds = 25 mA


    OCR Scan     		PDF ATF-10170 S-1679/10-89

    avantek

    Abstract: ATF-10170 Avantek S
    Text: AVANTEK INC 2GE D • data sheet 1141=1 lab OGObflMb 3 ATF-10170 0.5-12 GHz Low Noise Gallium Arsenide FET October, 1989 AVANTEK T-ll-ZS Avantek 70 mit Package Features • • • • • ■040 Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V, Ids = 25 mA


    OCR Scan     		PDF ATF-10170 ATF-10170 ADS-1679/10-89 avantek Avantek S

    ATF13136

    Abstract: No abstract text available
    Text: ATF-13136 2-16 GHz Low Noise Gallium Arsenide FET WKS% LETT miXM HEW PACKARD 36 micro-X Package1 Features Low Noise Figure: 1.2 dB typical at 12 GHz High Associated Gain: 9.5 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi dB at 12 GHz Cost Effective Ceramic Microstrip Package


    OCR Scan     		PDF ATF-13136 ATF13136