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Hewlett Packard Co ATF-10170
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ATF10170 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
ATF-10170		Avantek	Gallium Arsenide FET		Scan	PDF
ATF10170		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF

ATF10170 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
HRMA-0470B Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61 Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic	OCR Scan	PDF	E-28230 S-164 CH-8902 HRMA-0470B Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
avantek Abstract: ATF-10170 Avantek S Text: AVANTEK INC 2GE D • data sheet 1141=1 lab OGObflMb 3 ATF-10170 0.5-12 GHz Low Noise Gallium Arsenide FET October, 1989 AVANTEK T-ll-ZS Avantek 70 mit Package Features • • • • • ■040 Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V, Ids = 25 mA	OCR Scan	PDF	ATF-10170 ATF-10170 ADS-1679/10-89 avantek Avantek S
Untitled Abstract: No abstract text available Text: 20E D AVANTEK INC 0 AVANTEK • Hi data sheet 1 1 4 1 % ^ QDQhflMb 3 ATF-10170 0.5-12 GHz Low Noise Gallium Arsenide FET October, 1989 T-S i-ZS Avantek 70 mit Package Features • • • • • Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V , I ds = 25 mA	OCR Scan	PDF	ATF-10170 S-1679/10-89
Untitled Abstract: No abstract text available Text: HEWLETT-PACKARD/ CHPNTS LIE ]> T O * H EW LETT wHEMPACKARD • H 4 4 7 5A 4 0D[Hflfl3 217 ■ H P A ATF-10170 0.5-12 GHz Low Noise Gallium Arsenide FET Features 70 mil Package • • • • Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V, Ids = 25 mA	OCR Scan	PDF	ATF-10170 TF-10170
ATF-10170 Abstract: atf10170 Text: ATF-10170 0.5-12 GHz Low Noise Gallium Arsenide FET W K 3\ H E W LE TT mL'EM PACKARD Features 70 mil Package • • • • Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: Vos = 2 V, lDS = 25 mA High Associated Gain: 14.0 dB typical at 4 GHz High Output Power: 21.0 dBm typical Pi dB	OCR Scan	PDF	ATF-10170 atf10170
ATF-35176 Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376 Text: Gallium Arsenide GaAs Field Effect Transistors (FETs) Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number Gate Width Optimum Freq. Range (GHz) Test Freq. (GHz) NF. (dB) (dB) PldB (dBm) 0.5-12 2-18 0.5-6 0.5-10 4 12 4 4 0.5	OCR Scan	PDF	ATF-10100 ATF-13100 ATF-21100 ATF-25100 ATF-10170 ATF-13170 ATF-21170 ATF-25170 ATF-10136 ATF-10236 ATF-35176 ATF-3507 ATF-35076 ATF-44100 ATF26550 ATF-13036 ATF-35576 ATF-35376